Zintl phase compounds are emerging candidates for solar cells due to their unique electronic structure and favorable optoelectronic characteristics. In the present communication, we have studied the structural, electronic, optical, and transport properties of BaMg2X2 (X = P, As, Sb) Zintl compounds. The computation of formation energy and analysis of phonon dispersion spectra confirm their favorable formation and dynamic stability. Employing modified Becke-Johnson (mBJ) potential, we elucidate the band structure for BaMg2P2, BaMg2As2, and BaMg2Sb2, revealing direct band gaps of 1.80, 1.65, and 1.35 eV, respectively. Examination of DOS spectra provides better insight regarding the contribution of 6 s-Ba, 3 s-Mg, and (3p-5p)-P/As/Sb states in forming valence and conduction bands. The scrutiny of the optical characteristics indicates compelling light absorption in the visible region, suggesting promising prospects for optoelectronic applications. Thermoelectric characteristics are evaluated using classical Boltzmann transport theory. Notably, large figure of merit values of 0.99, 0.97 and 0.95 for BaMg2P2, BaMg2As2, and BaMg2Sb2, respectively, have been observed at room temperature. These exceptional optoelectronic characteristics, coupled with outstanding ZT values, suggest the potential suitability of these compositions for solar cells and thermoelectric device applications.