Topological insulators have drawn tremendous interest in current research for their exotic quantum phenomena and new-generation technological applications. In this literature, we have explored the topological properties of a 100 nm Bi2Te3 thin film, prepared by co-deposition technique through a custom-built electron-beam-evaporator. The detailed structural, compositional, and morphological analysis indicates the formation of a good-quality, well-stoichiometric, smooth film on Si (100) substrate. Our electrical-transport measurement exhibits three different types of temperature (T) dependency of resistance, where substrate Si-carrier dominates the transport at much higher-T (>250K), whereas a constant and logarithmic variation of filmʼs resistance are seen for below 250K and 25K, respectively. The logarithmic dependency is originated due to 2D electron-electron interaction, while the constant nature is arising from electron-phonon interaction. Finally, systematic temperature and angle-dependent magneto-conductance studies are performed. From which, we have found the existence of topological-surface-state in our Bi2Te3 film through the evidence of non-zero Berry phase (β = 0.66π), high phase-coherence-length (lϕ = 101.8 nm), and 2D coherency factor (α = −0.33).