Perpendicular Shape Anisotropy Research Articles

Magnetization reversal via domain wall motion in vertical high-aspect-ratio nanopillar with two magnetic junctions

A vertical ferromagnetic (FM) nanopillar can be used as magnetic memory owing to characteristics such as its high storage capacity and high thermal stability. The perpendicular shape anisotropy (PSA) of the pillar enables its magnetization direction to be stabilized. A pillar with a high aspect ratio exhibits both strong PSA and magnetization with high thermal stability. Reversing the magnetization direction of such a pillar using the current flowing through it is a significant challenge in spintronics. However, spin injection from another FM layer alone cannot reverse the magnetization of pillars of which the length exceeds 100 nm. This motivated us to propose a magnetic junction (MJ) consisting of a high-aspect-ratio FM nanopillar with two thin FM layers. Using micromagnetic simulation, we demonstrate the magnetization reversal of a 150 nm-long pillar with a diameter of 15 nm. The simulation revealed that the magnetization of the pillar reverses because of the spin transfer torque induced by the spin injection from the two thin FM layers and the spin-polarized current (SPC) flowing in the pillar in the longitudinal direction. During the magnetization reversal process, a domain wall (DW) first forms at one end of the pillar due to the spin injection. Then, driven by the SPC, the DW moves to the other end of the pillar, and the magnetization is reversed. The magnetization direction of the pillar, controlled by changing the direction of the current flowing through the pillar, can be evaluated from the respective magnetoresistance values of the two MJs. Alternatively, by pinning the DW in the pillar, a three-value magnetic memory can be developed. In addition, multi-bit and analog memories can be developed by controlling the pinning position of the DW. The high-aspect-ratio pillar-writing scheme is foreseen to pave the way for the practical development of next-generation spintronic devices.

Thermodynamic properties and switching dynamics of perpendicular shape anisotropy MRAM

The power consumption of modern random access memory (RAM) has been a motivation for the development of low-power non-volatile magnetic RAM (MRAM). Based on a CoFeB/MgO magnetic tunnel junction, MRAM must satisfy high thermal stability and a low writing current while being scaled down to a sub-20 nm size to compete with the densities of current RAM technology. A recent development has been to exploit perpendicular shape anisotropy along the easy axis by creating tower structures, with the free layers’ thickness (along the easy axis) being larger than its width. Here we use an atomistic model to explore the temperature dependent properties of thin cylindrical MRAM towers of 5 nm diameter while scaling down the free layer from 48 to 8 nm thick. We find thermal fluctuations are a significant driving force for the switching mechanism at operational temperatures by analysing the switching field distribution from hysteresis data. We find that a reduction of the free layer thickness below 18 nm rapidly loses shape anisotropy, and consequently stability, even at 0 K. Additionally, there is a change in the switching mechanism as the free layer is reduced to 8 nm. Coherent rotation is observed for the 8 nm free layer, while all taller towers demonstrate incoherent rotation via a propagated domain wall.

Spin-orbit torque assisted magnetization reversal of 100 nm-long vertical pillar

Long vertical pillars, with a width of the order of nanometers and with perpendicular shape anisotropy (PSA), have high thermal stability. The advantage of using longer pillars is that they can increase the memory areal density while maintaining robust thermal stability. The current-induced magnetization reversal of long pillars is a significant challenge in spintronic applications such as high-density magnetic memories. However, the magnetization of pillars that are more than 100 nm long has never been reversed by spin-orbit torque (SOT) or spin injection from another ferromagnet (FM). Against this background, we propose a novel magnetization reversal method for pillars based on both SOT and spin transfer torque without using a FM for spin injection. Furthermore, this SOT-assisted method significantly reduces the reversal time, as was demonstrated by micromagnetic simulation. Using a spin-polarized current and SOT, the magnetization was reversed in pillars with length ⩾100 nm. The magnetization of pillars with PSA and those with both high perpendicular magnetic anisotropy and PSA was successfully reversed. The findings of this study are physically novel and significant for practical applications. Consequently, the proposed new writing scheme paves the way for next-generation spintronic devices.

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of their functional magnetic behavior is often indirect, relying on magnetoresistance measurements and micromagnetic modeling. In this paper, we review recent work that was performed on these structures using a range of advanced electron microscopy techniques, focusing on aspects specific to the 3D and nanoscale nature of such elements. We present the methodology for the systematic transfer of individual SST-MRAM nano-pillars from large-scale arrays to image their magnetic configurations directly using off-axis electron holography. We show that improved phase sensitivity through stacking of electron holograms can be used to image subtle variations in DMTJs and the thermal stability of <20 nm PSA-STT-MRAM nano-pillars during in situ heating. The experimental practicalities, benefits, and limits of using electron holography for the analysis of MRAM devices are discussed, unlocking practical pathways for direct imaging of the functional magnetic performance of these systems with high spatial resolution and sensitivity.

Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars.

Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque magnetoresistive random-access memory (STT-MRAM) beyond the sub-20 nm technology node while retaining thermal stability. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic modeling. Here, the magnetism of a NiFe PSA-STT-MRAM nanopillar is investigated using off-axis electron holography, providing spatially resolved magnetic information as a function of temperature. Magnetic induction maps reveal the micromagnetic configuration of the NiFe storage layer (∼60 nm high, ≤20 nm diameter), confirming the PSA induced by its 3:1 aspect ratio. In situ heating demonstrates that the PSA of the storage layer is maintained up to at least 250 °C, and direct quantitative measurements reveal a moderate decrease of magnetic induction. Hence, this study shows explicitly that PSA provides significant stability in STT-MRAM applications that require reliable performance over a range of operating temperatures.

The microstructure and magnetic behaviors of Pr Fe B/Fe7Co3 dual phase nanowires: As a perpendicular magnetic recording candidate

Cylindrical magnetic nanowires, possessing high aspect ratio and outstanding perpendicular shape anisotropy, have been an excellent candidate for next generation perpendicular magnetic recording. Due to the scarcity of heavy rare earth elements (HREs), it is of great scientific significance and potential application value to add trace HREs to improve the magnetism of nanowires and prepare new magnetic materials with special applications. Here, under the condition of saving the use of rare earth resources, a novel type of hard/soft PrFeB/Fe7Co3 magnetic nanowires was fabricated via electrodeposition method, which is not inferior to that of large amount of HREs doping. Present study reports the phase composition, phase transformation, microstructure and magnetic properties in highly-ordered arrays of PrFeB/Fe7Co3 nanowires embedded in anodic aluminum oxide (AAO) template. The results show that after 903 K-annealing process, Pr2Co17 and FeB phases preferentially nucleate, followed by Fe7Co3 + Pr2Fe14B + Pr2Co14B + PrB4 phases, and finally Pr2Fe17 phase nucleate. It is found that the annealed PrFeB/Fe7Co3 nanowires have excellent magnetic properties, and the improvement of its magnetic properties is attributed to location pinning, special coherent interface and exchange coupling.

Spin-Torque-Triggered Magnetization Reversal in Magnetic Tunnel Junctions with Perpendicular Shape Anisotropy

The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $\Delta$. Although the larger storage layer thickness improves $\Delta$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $\Delta$ while keeping a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $\Delta$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios.

Direct observation of the perpendicular shape anisotropy and thermal stability of STT-MRAM nano-pillars examined by off-axis electron holography

Direct observation of the perpendicular shape anisotropy and thermal stability of STT-MRAM nano-pillars examined by off-axis electron holography

L-shaped electrode design for high-density spin–orbit torque magnetic random access memory with perpendicular shape anisotropy

Magnetic tunneling junctions with strong perpendicular shape anisotropy attract attention due to their high-density magnetic random access memory. As thermal stability increases, the power consumption also increases. To solve this problem, devices are made to be driven by spin–orbit torque (SOT) instead of spin-transfer torque. However, the assisting field needed for deterministic switching is a major obstacle for SOT devices. In this work, we demonstrate an L-shaped electrode structure attached to the magnetic recording layer to induce a composite SOT, achieving high-speed and field-free magnetization switching. Meanwhile, a comparative study between L-shaped and sidewall electrode structure demonstrates that the L-shaped structure leads to fast and low-power switching. Finally, the switching characteristic at various current densities and spin Hall angles is studied and it turns out that to achieve high-speed reversal, the current density and the spin Hall angle need to be optimized, which might be attributed to strong in-plane effective field component disturbance. The novel L-shaped structure is feasible for high-speed, low-power and deterministic switching and has great potential in spintronic applications.

Evaluating critical metals contained in spintronic memory with a particular focus on Pt substitution for improved sustainability

Thanks to their unique combination of properties: non-volatility, speed, density and write endurance, spintronic memory called spin transfer-torque Magnetic Random Access Memory (STT-MRAM) is expected to play a major role in the future development of the Internet of Things (IoT) and more generally in information and communication technologies. This type of spintronic device is usually made of materials, some of which can be classified as critical. Recent studies have evaluated critical materials contained in magnetic random access memory (Ku, 2018; European Commission, 2020 [1,2]). However, in those cases the type of memory analyzed belongs to the first generation of MRAMs developed in the early 2000s. Nowadays, the memory devices are magnetized perpendicularly to the plane of the layers and contain a synthetic antiferromagnet (SAF) that provides a high coercivity to the STT-MRAM reference layer with reduced stray field. This SAF is typically made of cobalt (Co) and platinum (Pt) multilayers antiferromagnetically coupled across a thin ruthenium (Ru) layer. Due to the high-embodied energy of platinum group metals (PGMs), a common concern when evaluating these materials is the environmental risk associated with their production. An evaluation of the environmental and economic risks of using such multilayers is first reported here, followed by a discussion of its supply risk. Substitution of Co/Pt multilayers by Co/Ni multilayers can lead to a reduction by 3–4 orders of magnitude in terms of energy requirements or global warming potential (GWP) associated with the use of these multilayers. An alternative concept based on perpendicular shape anisotropy (PSA) can also yield a reduction by 1–2 orders of magnitude in these quantities. However, for the case of STT-MRAM, tiny quantities of PGM layers are used in comparison with the mass of the silicon wafers on which these type of devices are grown. Therefore, the environmental and economic impact of the silicon wafer fabrication is found to be much higher than that of the PGM materials incorporated in the STT-MRAM stacks. Nonetheless, the high supply risk associated with PGMs remains a reason for awareness. One explored possibility is a SAF structure based on Co/Ni multilayers which can have similar performance. A second more challenging alternative is also proposed based on the aforementioned PSA concept. Finally, we address the case of several other metals identified by the European Commission as critical and used in MRAM such as W or Ta, both recently included in the EU's Conflict Minerals Regulation released in January 2021 (https://ec.europa.eu/trade/policy/in-focus/conflict-minerals-regulation/regulation-explained/, 2020 [3]).

Shape Defect Effect in Perpendicular Shape Anisotropy Nanodots

Perpendicular shape anisotropy spin-transfer-torque magnetic random-access memory (PSA-STT-MRAM) demonstrates high thermal stability when size is reduced to 20 nm, which gives a new way to improve the integrity of electronic devices. This long and narrow device also poses challenges in the device fabrication process, such as sample tilt and etching defects. We used a micromagnetic simulation method to investigate the relationship between those defects and device performance. The coercivity and critical switching current density of PSA-MRAM have been calculated and analyzed with micromagnetic simulation, a three-dimensional Stoner–Wohlfarth model, and spin-filter theory. Our results demonstrate how shape defects affect the performance of the PSA-MRAM and provide guidelines for practical realization of nanoscale PSA-MRAM.

Temperature dependence of magnetic anisotropy in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

We study the temperature dependence of magnetic anisotropy (MA) of ferromagnetic semiconductor (Ga0.7,Fe0.3)Sb thin films with thicknesses of 20 nm and 40 nm using ferromagnetic resonance. With decreasing temperature from 300 to 10 K, the easy magnetization axis of the 40-nm-thick film changes from in-plane to perpendicular at 250 K, while that of the 20-nm-thick film lies in the film plane at all measurement temperatures (10–300 K). In the 40-nm-thick film, the uniaxial perpendicular anisotropy (K2⊥) significantly increases with decreasing temperature and surpasses the thin-film shape anisotropy, leading to perpendicular magnetic anisotropy (PMA). We present a possible scenario that the increase in K2⊥ originates from the formation of the Fe-rich nanocolumns with the perpendicular shape anisotropy, which induces the PMA in the whole film at low temperatures due to carrier-mediated exchange interactions between Fe spin in the Fe-rich nanocolumns and Fe spin in the (Ga,Fe)Sb matrix. Our findings on the temperature dependence of MA of heavily Fe-doped (Ga,Fe)Sb provide insights into the mechanism of high-Curie-temperature ferromagnetism.

Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy.

The concept of Perpendicular Shape Anisotropy STT-MRAM (PSA-STT-MRAM) has been recently proposed as a solution to enable the downsize scalability of STT-MRAM devices beyond the sub-20 nm technology node. For conventional p-STT-MRAM devices with sub-20 nm diameters, the perpendicular anisotropy arising from the MgO/CoFeB interface becomes too weak to ensure thermal stability of the storage layer. In addition, this interfacial anisotropy rapidly decreases with increasing temperature which constitutes a drawback in applications with a large range of operating temperatures. Here, we show that by using a PSA based storage layer, the source of anisotropy is much more robust against thermal fluctuations than the interfacial anisotropy, which allows considerable reduction of the temperature dependence of the coercivity. From a practical point of view, this is very interesting for applications having to operate on a wide range of temperatures (e.g. automotive -40 °C/+150 °C).

Perpendicular shape anisotropy spin transfer torque-MRAM: determination of pillar tilt angle from 3D Stoner–Wohlfarth astroid analysis

The concept of perpendicular shape anisotropy spin-transfer-torque magnetic random access memory (PSA-STT-MRAM) consists of significantly increasing the thickness of the storage layer in STT-MRAM to values comparable to the cell diameter so as to induce a perpendicular shape anisotropy in this layer. This robust source of bulk anisotropy allows us to extend the downsize scalability of STT-MRAM towards a sub-10 nm technological node. However, due to the high aspect ratio of the patterned magnetic tunnel junction pillars, some of them may fall during the etching process or become tilted. To interpret the magnetoresistance loops measured on these PSA-STT-MRAM cells, it is important to know the exact direction of the applied field with respect to the pillar axis. We present here an experimental procedure based on 3D Stoner Wohlfarth astroid analysis which allows us to determine the pillar tilt angle.

Micromagnetic study of statistical switching in magnetic tunnel junctions stabilized by perpendicular shape anisotropy

Magnetic tunnel junctions with free layer thermally stabilized by the combined action of perpendicular magneto-crystalline and shape anisotropy are considered. The spin-transfer torque driven switching dynamics is studied. Analytical formulas for switching time statistical distributions and write-error rate are derived under the assumption of ballistic dynamics. The analytical results are compared with full micromagnetic and macrospin simulations based on stochastic Landau-Lifshitz-Gilbert-Slonczewski equation. This comparison reveals quantitative agreement with the proposed analytical theory.

Perpendicular shape anisotropy spin transfer torque magnetic random-access memory: towards sub-10 nm devices

A new concept to increase the downsize scalability of perpendicular spin transfer torque magnetic random-access memory (p-STT-MRAM), called perpendicular shape anisotropy (PSA) STT-MRAM is presented. This approach consists of significantly increasing the thickness of the storage layer in p-STT-MRAM to values comparable to the cell diameter so as to induce a PSA in this layer which comes on top of the MgO/FeCoB interfacial anisotropy. This PSA-STT-MRAM is provided by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque (STT) magnetic random access memory, wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to this robust source of bulk anisotropy, PSA-STT-MRAM offers a greatly improved downsize scalability over conventional perpendicular p-STT-MRAM. Despite the large thickness of the storage layer, PSA-STT-MRAM cells can still be written by STT provided their thermal stability factor Δ is adjusted in the same range as in conventional p-STT-MRAM, i.e. Δ of the order of 60–100 depending on the memory capacity and required bit error rate. Moreover, a low damping material can be used for the thick FM material, thus leading to a reduction of the write current. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8 nm in diameter and the possibility to maintain thermal stability factor above 60 down to 4 nm diameter. We also show that thanks to the increased thickness of the storage layer, the anisotropy and therefore the memory retention are much less sensitive on temperature than in conventional p-STT-MRAM. This is very interesting for applications operating on a wide range of temperatures (e.g. automotive −40 °C to +150 °C), as well as to fulfill solder reflow compliance.

A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy.

A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists of significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer is of the order of or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor the out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAMs has several advantages. Due to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, a low damping material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8 nm in diameter and possibility to maintain the thermal stability factor above 60 down to 4 nm diameter.

Size Dependence Effect in MgO-Based CoFeB Tunnel Junctions with Perpendicular Magnetic Anisotropy

We examine the effect of junction sizes on the magnetization reversal process and spin-transfer torque switching of the MgO-based CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA). From the magnetic field transport measurements, it was found that the miniaturization of MTJs inherently enhances the switching asymmetry and the PMA of the soft layer. Our micromagnetic simulations confirmed that the dipolar field from the hard layer is responsible for the switching asymmetry and the increase in perpendicular shape anisotropy induces improvement of the PMA. It was further revealed that this additional anisotropy gained from the smaller MTJ sizes is not sufficient to sustain the thermal stability to meet the long-term information storage at the state-of-the-art complementary-metal–oxide semiconductor technology node. The pulsed spin-transfer torque measurements showed that a higher current density is needed to switch the magnetization of the soft layer in MTJ with smaller lateral dimensions, which is attributed to the increase in PMA.

Magnetic properties of Ni–Fe nanowire arrays: effect of template material and deposition conditions

The objective of this work is to study the magnetic properties of arrays of Ni–Fe nanowires electrodeposited in different template materials such as porous silicon, polycarbonate and alumina. Magnetic properties were studied as a function of template material, applied magnetic field (parallel and perpendicular) during deposition, wire length, as well as magnetic field orientation during measurement. The results show that the application of magnetic field during deposition strongly influences the c-axis preferred orientation growth of the Ni–Fe nanowires. The samples with magnetic field perpendicular to the template plane during deposition exhibit strong perpendicular anisotropy with greatly enhanced coercivity and squareness ratio, particularly in the Ni–Fe nanowires deposited in polycarbonate templates. In the case of polycarbonate template, as magnetic field during deposition increases, both coercivity and squareness ratio also increase. The wire length dependence was also measured for polycarbonate templates. As wire length increases, coercivity and squareness ratio decrease, saturation field increases. Such magnetic behaviour (dependence on template material, magnetic field, wire length) can be qualitatively explained by preferential growth phenomena, dipolar interactions among nanowires and perpendicular shape anisotropy in individual nanowires.

Domain structures of nanocrystalline Fe 78Si 10B 12 thin films

In the nanocrystalline Fe 78Si 10B 12 thin film, a weak dense stripe domain structure is observed. Out-of-plane anisotropy accounts for the observed domain structure. Perpendicular shape anisotropy due to the formation of the island-like configuration by the annealing treatment and magnetocrystalline anisotropy due to the strong α-Fe(Si) (1 1 0) texture are considered to be the origin of the perpendicular anisotropy. A metastable domain structure, which is the superimposition of the fine dense stripe domain structures onto the in-plane wide basic domains, was also observed in the as-annealed sample. The metastable domain structure turns to a stable single-domain state after magnetization.