Perpendicular Junctions Research Articles

Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

Spin-Transfer Torque Switching at Ultra Low Current Densities

The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of Boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.2 kA/cm$^2$ is observed. As of today, this value is the lowest reported value for current-induced magnetization reversal.

Thermal conductance of the junction between single-walled carbon nanotubes

The thermal conductances of the carbon nanotube (CNT) junctions that would be found in a CNT aerogel are predicted using molecular dynamics simulations. At a temperature of 300 K, the thermal conductance of a perpendicular junction converges to 40 pW/K as the CNT lengths approach 100 nm. The key geometric parameter affecting the thermal conductance is the angle formed by the two CNTs. At pressures above 1 bar, the presence of a surrounding gas leads to an effective increase in the junction thermal conductance by providing a parallel path for energy flow.

Anti‐Ferromagnet Controlled Tunneling Magnetoresistance

The requirement for high‐density memory integration advances the development of newly structured spintronic devices, which have reduced stray fields and are insensitive to magnetic field perturbations. This could be visualized in magnetic tunnel junctions incorporating anti‐ferromagnetic instead of ferromagnetic electrodes. Here, room‐temperature anti‐ferromangnet (AFM)‐controlled tunneling anisotropic magnetoresistance in a novel perpendicular junction is reported, where the IrMn AFM stays immediately at both sides of AlOx tunnel barrier as the functional layers. Bi‐stable resistance states governed by the relative arrangement of uncompensated anti‐ferromagnetic IrMn moments are obtained here, rather than the traditional spin‐valve signal observed in ferromagnet‐based tunnel junctions. The experimental observation of room‐temperature tunneling magnetoresistance controlled directly by AFM is practically significant and may pave the way for new‐generation memories based on AFM spintronics.

Phase diagrams of MgO magnetic tunnel junctions including the perpendicular spin-transfer torque in different geometries

We calculate the switching voltages for MgO-based magnetic tunnel junctions taking into account both the in-plane and the fieldlike spin-torque terms. To this end, we analytically solve the Landau-Lifshitz-Gilbert equation for a generalized geometry. We assume that the in-plane spin-torque varies linearly with the applied voltage, while the fieldlike torque exhibits a quadratic voltage dependence. Specifically, we consider that the free layer has two generic, orthogonal anisotropy components, one of which is along the direction defined by the magnetization of the reference layer, which also serves as a polarizer. The resulting formalism is applied to three different, experimentally relevant geometries: tunnel junctions with both the free and the reference layers magnetized in the plane of the layers, junctions with fully perpendicular anisotropy, and perpendicular junctions with an additional in-plane easy axis, respectively. We find that for in-plane devices, the quadratic dependence of the fieldlike torque on the applied voltage can lead to back hopping, which remains possible if we insert an additional linear term for the bias dependence of the fieldlike spin-torque comparable to current experimental results. For perpendicular anisotropy junctions neither back hopping nor spin-transfer-driven steady-state precession are expected. An additional in-plane shape anisotropy component stabilizes canted states in tunnel junctions with perpendicular anisotropy for specific values of voltage and field. The results are consistent with numerical integration of the Landau-Lifshitz-Gilbert equation and in good agreement with recent experiments involving perpendicular magnetic anisotropy magnetic tunnel junctions.

The dipolar interaction in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction

Ultrathin CoFeB/MgO/CoFeB system with perpendicular magnetic anisotropy is a promising candidate for the high density magnetic random access memory. However, a dipolar interaction between the CoFeB layers may introduce a minor loop shift (Hs) and causes uncertainty during the operation. In this report, we systematically studied the dipolar effect in these structures and found that the coupling may be either ferromagnetic or antiferromagnetic (15 Oe > Hs > −15 Oe) depending upon the CoFeB thickness (0.9–1.4 nm). A modified Fabry-Perot model, which accounts the Bloch wave interference, may explain the present observations of the dipolar effect in the perpendicular junctions of CoFeB/MgO/CoFeB.

TEM studies of microstructure, interfaces, and intermixing of FePt/MgO/FePt/Pt/Cr(Ru) films

We have investigated the microstructure, interfaces, and intermixing in sputter-deposited FePt/MgO/FePt/Pt/Cr(Ru)/SiN/Si magnetic tunnel junctions by high-resolution transmission electron microscopy (HRTEM) and correlated these results to the magnetic properties. Cr90Ru10 is used as a texturing layer for the growth of perpendicular magnetic anisotropy (PMA) films. HRTEM confirmed the formation of the desired [001] texture in cubic Cr90Ru10 as well as in the adjacent L10-FePt layer using our growth methods. A 1.5 nm layer of MgO was deposited as a tunnel barrier for magnetic tunnel junction in an attempt to fabricate fully perpendicular tunnel junctions of these materials. The HRTEM observations, however, show that the MgO layer was partially crystalline but randomly oriented. The top FePt layer was also found to grow as discrete islands with random orientations and is mostly fcc crystal structure reducing the utility of this multilayer in PMA tunnel junction devices. The fine probe energy-dispersive X-ray spectroscopy showed the interdiffusion of Cr to Pt/FePt layers. The magnetic properties show out-of-plane coercivity larger than that of the in-plane values but with a loss of squareness, consistent with the loss of [001] texture and of L10 structure in the top magnetic layer.

THEORY AND EXPERIMENT OF A COMPACT WAVEGUIDE DUAL CIRCULAR POLARIZER

A new compact and wide-band waveguide dual circular polarizer at Ka-band is presented and tested in this paper. This compact structure is composed of a three-port polarizing diplexer and a circular polarizer realized by a simple pair of large grooves. The polarizing diplexer includes two rectangular waveguides with a perpendicular H-plane junction, one circular waveguide coupled in E- plane. A cylindrical step and two pins are used to match this structure. For a LHCP or RHCP wave in the circular port, only one speciflc rectangular port outputs power and the other one is isolated. The accurate analysis and design of the circular polarizer are conducted by using full-wave electromagnetic simulation tools. The optimized dual circular polarizer has the advantage of compact size with a volume smaller than 1.5‚ 3 , broad bandwidth, uncomplicated structure, and is especially suitable for use at high frequencies such as Ka-band and above. The prototype of the polarizer has been manufactured and test, the experimental results are basically consistent with the theories.

Simulations on the mechanism of CNT bundle growth upon smooth and nanostructured Ni as well as θ-Al2O3 catalysts

Abstract In the current study, we have performed ab initio DFT calculations on the gradually growing 2D periodic models of capped single-wall carbon nanotubes (SW CNTs) upon their perpendicular junctions with the Ni(111) substrate, in order to understand the peculiarities of the initial stage of their growth on either smooth or nanostructured catalytic particles. Appearance of the adsorbed carbon atoms upon the substrate follows from the dissociation of CVD hydrocarbon molecules, e.g., CH4: (CH4)ads → (CH)ads+3Hads and (CH)ads → Cads+Hads. (Since the effective growth of CNTs upon Ni nanoparticles occur inside the nanopores of amorphous alumina, we have also simulated analogous surface reactions upon the θ-Al2O3(010) slabs). Association of the adsorbed carbon atoms upon the catalyst surface precedes further swelling of the (Cn)ads islands after appearance of pentagonal defects within a honeycomb sheet which are more probable upon the catalyst surface containing either defects or nanoclusters (as in the case of the nanostructured substrate). The gradual growth of the capped CNTs is considerably more effective upon the nanostructured Ni(111) substrate compared to a smooth nickel substrate (cf. values of CNT adhesion energy per boundary C atom for chiralities of either armchair-type, 4.04 vs. 2.51 eV, or zigzag-type, 4.61 vs. 2.14 eV, respectively). The electronic charge transfer from the Ni catalyst towards the CNTs has been calculated for both chiralities (> 1 e per C atom), i.e., quite strong chemical bonds are formed within the CNT/Ni(111) interconnects.

Hard layer demagnetization by soft layer cycling in a MgO-based perpendicular magnetic tunnel junction

We report here that in perpendicular tunnel junction the hard layer demagnetizes when the soft layer is cycled. This happens faster when the cycling field is closer to the reversal field of the hard layer. Magnetic force microscopy imaging done at different stages of the cycle after several loops show compact demagnetized areas surrounded by large saturated zones in the hard layer. A mechanism based on interlayer magnetostatic coupling induced by the stray field created by domain wall in the soft layer is presented.

Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current

This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p-n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used for this. This method is based on the model used to calculate the contrast of a localized defect as suggested by C. Donolato and is known as the contrast C/sub n''/ model. This model can be used to precisely extract the location of the localized defect and is unaffected by the value of the surface recombination velocity at the beam entrance surface. The model of the localized defect used in this paper is characterized by minority carriers with constant lifetimes that are lower than those in the bulk. An electron beam with an extended generation profile was used in a two-dimensional (2-D) device simulator, for the verification of the theory.

Structure and Evolution of Parallel β-Helix Proteins

Three bacterial pectate lyases, a pectin lyase fromAspergillus niger,the structures of rhamnogalacturonase A fromAspergillus aculeatus,RGase A, and the P22-phage tailspike protein, TSP, display the right-handed parallel β-helix architecture first seen in pectate lyase. The lyases have 7 complete coils while RGase A and TSP have 11 and 12, respectively. Each coil contains three β-strands and three turn regions named PB1, T1, PB2, T2, PB3, and T3 in their order of occurrence. The lyases have homologous sequences but RGase A and TSP do not show obvious sequence homology either to the lyases or to each other. However, the structural similarities between all these molecules are so extensive that divergence from a common ancestor is much more probable than convergence to the same fold. The region PB2-T2-PB3 is the best conserved region in the lyases and shows the clearest structural similarity. Not only is the pleating and the direction of the hydrogen bonding in the sheets conserved, but so is the unusual αL-conformation turn between the two sheets. However, the overall shape, the position of long loops, a conserved α-helix that covers the amino-terminal end of the parallel β-helix and stacks of residues in αR-conformation at the start of PB1 all suggest a common ancestor. The functional similarity, that the enzymes all bind α-galactose containing polymers at an equivalent site involving PB1 and its two flanking turn regions, further supports divergent evolution. We suggest that the stacking of the coils and the unusual near perpendicular junction of PB2 and PB3 make the parallel β-helix fold especially likely to maintain similar main chain conformations during divergent evolution even after all vestige of similarity in primary structure has vanished.

Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements

The depth-dependent experimental collection functions F( z) of solar cells with CuInS 2, CuGaSe 2 and CuInSe 2 absorber layers are derived from planar electron-beam-induced current (EBIC) measurements. It is shown that F( z) for CuInS 2 and CuGaSe 2 cells can be interpreted by a simple heterojunction model. For CuInSe 2 cells, however, a near-interface region with modified experimental collection function is found, which is possibly due to an ordered vacancy compound formed at the surface. Moreover, high values of F( z) for minority carriers generated near the backcontact of the CuInSe 2 cell are indicated. This can be interpreted by either the implementation of a backsurface field in these devices or perpendicular junctions at grain boundaries.