Performance Of Photovoltaic Devices Research Articles

Development of SnO2 Composites as Electron Transport Layer in Unencapsulated CH3NH3PbI3 Solar Cells

Improving morphological and electronic properties of the electron transport layer (ETL) is a critical issue to fabricate highly efficient perovskite solar cells. Tin dioxide is used as an ETL for its peculiarities such as low-temperature solution-process and high electron mobility and several handlings have been tested to increase its performances. Herein, SnO2:ZnO and SnO2:In2O3 composites are studied as ETL in planar n-i-p CH3NH3PbI3 solar cells fabricated in ambient air, starting from glass/ITO substrates. Morphological, electrical and optical properties of zinc- and indium-oxide nanoparticles (NPs) are investigated. First-principle calculations are also reported and help to further explain the experimental evidences. Photovoltaic performances of full devices show an improvement in efficiency for SnO2:In2O3–based solar cells with respect to pristine SnO2, probably due to a suppression of interfacial charge recombination between ITO/ETL and ETL/perovskite. Moreover, a better homogeneity of SnO2:In2O3 deposition with respect to SnO2:ZnO composites, conducts an increase in perovskite grain size and, consequently, the device performances.

Electrochemical fabrication and reductive doping of electrochemically reduced graphene oxide decorated with TiO2 electrode with highly enhanced photoresponse under visible light

The development of visible-light active TiO2 or TiO2-based composite materials has been extensively studied in recent years due to their wide range of applications in energy and photocatalysts. The present study reports a facile and environmentally friendly one-pot electrochemical method for the electrochemical fabrication and doping of the electrochemically reduced graphene oxide (ERGO) decorated with TiO2 nanoparticles. The electrochemical reductive doping of TiO2/ERGO composites was carried out in an aqueous solution of H2SO4, LiClO4, NaOH and KOH by a potential controlled electrochemical process. A significant shift of the absorption edge to a lower energy in the visible-light region for hydrogenated and doped TiO2/ERGO composites has been observed, which suggested that the bandgap energy of TiO2/ERGO was narrowed after electrochemical treatment. Photocurrent densities of H-, Li-, Na- and K- doped TiO2/ERGO composites were approximately 11, 12, 9 and 7 times higher than those of undoped TiO2/ERGO electrodes respectively, which indicated that the separation efficiency of photo-induced electrons and holes was improved dramatically after electrochemical hydrogenation and doping. This electrochemical reductive treatment appears to be an effective way to enhance the performance of photovoltaic devices in the visible range by improving the electrical conductivity and electron mobility.

The performance of a perovskite-silicon tandem photovoltaic device coupled with the infrared-enhanced response titanium subnitride film

Two kinds of carrier’s passivating contact capping stacks have been fostered for an asymmetric silicon based solar cell, in which ITO/a-SiOx(In) is for hole selection and possesses graded distribution of In, Si, O elements as well as intrinsic- and p-type ultrathin SiOx(In) layer trait, while the SiOx-TiNy layer on rear of n-Si absorber is for electron selection and behaves as a degenerated material with higher electron concentration (1023-1024 /cm3). By using Hall effect, X-ray photoemission and minority carrier lifetime measurements and simulation analyses with AFORS-HET software of TiNy films and ITO/a-SiOx(In)/n-Si/SiOx-TiNy device, respectively, it is found that the performance of the device is strongly correlated to the N deficiency of TiNy film, in addition the simulation results demonstrate that the reduced density of interface state (Dit(E)) and the enhanced near-infrared response (EQE) lead to an increase of open-circuit voltage from 578.6 to 744.1 mV, and power conversion efficiency (PCE) has increased by 30.65%, compared with the prototype of semiconductor-quasi-insulator-semiconductor device (SQIS). Moreover, a monolithic tandem device by n-i-p type perovskite cell tunnel-connected to the modified SQIS cell has achieved a PCE of 31.39%, which is predicted through an available estimation under the maximum values of the Jsc, Voc and pFF.

Efficient Bulk Defect Suppression Strategy in FASnI3 Perovskite for Photovoltaic Performance Enhancement

AbstractDespite Sn‐based perovskite solar cells (PSCs) prevailing over lead‐free candidates, the Sn vacancies (VSn) and Sn4+ defects seriously deteriorate device photovoltaic performance. The presently reported methods can only effectively achieve surface defect passivation, and it is of great challenge and fundamental importance to develop efficient strategy to deal with the intrinsic defects located inside the lattice. Herein, a novel bulk defect suppression strategy is proposed, introducing large organic piperazine cations (PZ2+) into the lattice of 3D FASnI3 perovskite to restrain the generation of bulk defects. The incorporation of PZ2+ results in forming a FA1−2yPZ2ySn1−yI3 (0 ≤ y ≤ 0.25) structure with no reduction in dimensionality, which guarantees the continuity of [SnI6] octahedral structures with unobstructed carrier transport and reduced charged defects. The potent interactions between PZ2+ and [SnI6] structures enhance VSn formation energy and effectively suppress bulk defect formation. As a result, the FASnI3+1%PZ films exhibit optimized crystalline quality, decreased background carrier density, lower p‐type self‐doping, and reduced trap state density. Benefiting from the above advantages, the FASnI3+1%PZ device achieves an optimal PCE of 9.15% and unencapsulated device maintains over 95% of initial PCE after aging for 1000 h in N2 golvebox. The bulk defect suppression strategy provides fire‐new building bricks toward high‐performance Sn‐based PSCs.

Drop-Casting Method to Screen Ruddlesden-Popper Perovskite Formulations for Use in Solar Cells.

Small-area metal–halide perovskite solar cells (PSCs) having power-conversion efficiencies (PCEs) of greater than 25% can be prepared by using a spin-coated perovskite layer, but this technique is not readily transferrable to large-scale manufacturing. Drop-casting is a simple alternative method for film formation that is more closely aligned to industry-relevant coating processes. In the present work, drop-casting was used to prepare films for screening two-dimensional Ruddlesden–Popper (2DRP) metal–halide perovskite formulations for potential utility in PSCs, without additional processing steps such as inert-gas blowing or application of antisolvent. The composition of the 2DRP formulation used for drop-casting was found to have a profound effect on optical, spectroscopic, morphological, and phase-distribution properties of the films as well as the photovoltaic performance of related PSC devices. This facile method for screening film quality greatly assists in speeding up the identification of perovskite formulations of interest. The optimal 2DRP perovskite formulation identified from screening was utilized for industry-relevant one-step roll-to-roll slot-die coating on a flexible plastic substrate, producing PSCs having PCEs of up to 8.8%. A mechanism describing film formation and phase distribution in the films is also proposed.

A Comparison of Charge Carrier Dynamics in Organic and Perovskite Solar Cells.

The charge carrier dynamics in organic solar cells and organic-inorganic hybrid metal halide perovskite solar cells, two leading technologies in thin-film photovoltaics, are compared. The similarities and differences in charge generation, charge separation, charge transport, charge collection, and charge recombination in these two technologies are discussed, linking these back to the intrinsic material properties of organic and perovskite semiconductors, and how these factors impact on photovoltaic device performance is elucidated. In particular, the impact of exciton binding energy, charge transfer states, bimolecular recombination, charge carrier transport, sub-bandgap tail states, and surface recombination is evaluated, and the lessons learned from transient optical and optoelectronic measurements are discussed. This perspective thus highlights the key factors limiting device performance and rationalizes similarities and differences in design requirements between organic and perovskite solar cells.

Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer

The depolarization field of ferroelectric photovoltaic materials can enhance the separation and transport of photogenerated carriers, which will improve the performance of photovoltaic devices, thus attracting the attention of researchers. In this paper, a narrow bandgap molecular ferroelectric Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was selected as the photo absorption layer for the fabrication of solar cells. After optimizing the ferroelectric thin film by the antisolvent process, the effect of different polarization voltages on the performance of ferroelectric devices was studied. The results showed that there was a significant increase in short-circuit current density, and the photoelectric conversion efficiency showed an overall increasing trend. Finally, we analyzed the internal mechanism of the effect of polarization on the device.

Ultrafast and High-Yield Polaronic Exciton Dissociation in Two-Dimensional Perovskites.

Layered two-dimensional (2D) lead halide perovskites are a class of quantum well (QW) materials, holding dramatic potentials for optical and optoelectronic applications. However, the thermally activated exciton dissociation into free carriers in 2D perovskites, a key property that determines their optoelectronic performance, was predicted to be weak due to large exciton binding energy (Eb, about 100-400 meV). Herein, in contrast to the theoretical prediction, we discover an ultrafast (<1.4 ps) and highly efficient (>80%) internal exciton dissociation in (PEA)2(MA)n-1PbnI3n+1 (PEA = C6H5C2H4NH3+, MA = CH3NH3+, n = 2-4) 2D perovskites despite the large Eb. We demonstrate that the exciton dissociation activity in 2D perovskites is significantly promoted because of the formation of exciton-polarons with considerably reduced exciton binding energy (down to a few tens of millielectronvolts) by the polaronic screening effect. This ultrafast and high-yield exciton dissociation limits the photoluminescence of 2D perovskites but on the other hand well explains their exceptional performance in photovoltaic devices. The finding should represent a common exciton property in the 2D hybrid perovskite family and provide a guideline for their rational applications in light emitting and photovoltaics.

Characterization broadband omnidirectional antireflection ITO nanorod films coating

Three-dimensional (3D) nanostructure electrode based on the transparent conductive oxide (TCO) is an alternative and effective approach for increasing the performance of next-generation photovoltaic and optoelectronic devices. In this work, we prepared the vertically aligned indium tin oxide nanorods (ITO-NRs) film on silicon (100) wafer and commercial ITO thin-film coated glass substrate (ITO-TF/glass) by the glancing angle deposition (GLAD) technique. The morphologies of the ITO-NRs films were confirmed by field-emission scanning electron microscope (FE-SEM). The grazing-incident X-ray diffraction (GIXRD) observed that the ITO-NRs were formed as amorphous and nanocrystalline phase. The photoemission spectra revealed the atomic percentage of elements in ITO-NRs, and the work function of the ITO-NRs was found to increase as a function of layer thickness. To simply demonstrate their feasibility in TCO applications, the ITO-NRs films were deposited on ITO-TF/glass. We found that the resistivity of ITO-NRs on ITO-TF/glass was higher than that of a bare ITO-TF/glass substrate, which can explain through the surface recombination loss. Besides, by precisely tunning the layer thickness of ITO-NRs films, the optical transmittance was enhanced at 85.5–90.0% over the broad wavelength in the visible region with omnidirectional AR characteristic which is superior to that in conventional ITO-TF/glass. Our thickness dependence of the ITO-NRs properties discloses promising 3D TCO nanostructure in wide application.

Super Flexible Transparent Conducting Oxide‐Free Organic–Inorganic Hybrid Perovskite Solar Cells with 19.01% Efficiency (Active Area = 1 cm2)

Highly efficient organic–inorganic hybrid perovskite solar cells (OIHP‐SCs) are often fabricated on a transparent conducting oxide (TCO) substrate such as indium tin oxide (ITO). However, the presence of TCOs is disadvantageous to the development of flexible OIHP‐SCs due to the brittle nature of ITO which is easily breakable during bending. Herein, a flexible TCO‐free OIHP‐SC is demonstrated by using lithium bis(trifluoromethane)sulfonimide (Li‐TFSI) as a codopant for the single‐layer graphene transparent conducting electrode and poly(triarylamine) hole‐transporting material (HTM) on a flexible polydimethylsiloxane substrate. The optical and electrical properties of the Li‐TFSI‐doped graphene substrate are measured by controlling the doping amount and the best conditions for charge extraction are established at a doping concentration of 20 mm Li‐TFSI, thus optimizing the device photovoltaic performance. As a result, a highest power conversion efficiency of 19.01% is demonstrated by the flexible TCO‐free OIHP‐SC devices with an active area of 1 cm2. In addition, the flexible TCO‐free OIHP‐SCs exhibit good bending stability after 5000 bending cycles at radii of 6, 4, and 2 mm and excellent light soaking stability under 1 Sun light intensity over 1000 h as opposed to the poor stability when using poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate as the HTM.

Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity

In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.

Molecular Weight-Dependent Physical and Photovoltaic Properties of Poly(3-alkylthiophene)s with Butyl, Hexyl, and Octyl Side-Chains.

A series of poly-3-alkylthiophenes (P3ATs) with butyl (P3BT), hexyl (P3HT), and octyl (P3OT) side-chains and well-defined molecular weights (MWs) were synthesized using Grignard metathesis polymerization. The MWs of P3HTs and P3OTs obtained via gel permeation chromatography agreed well with the calculated MWs ranging from approximately 10 to 70 kDa. Differential scanning calorimetry results showed that the crystalline melting temperature increased with increasing MWs and decreasing alkyl side-chain length, whereas the crystallinity of the P3ATs increased with the growth of MWs. An MW-dependent red shift was observed in the UV–Vis and photoluminiscence spectra of the P3ATs in solution, which might be a strong evidence for the extended effective conjugation occurring in polymers with longer chain lengths. The photoluminescence quantum yields of pristine films in all polymers were lower than those of the diluted solutions, whereas they were higher than those of the phenyl-C61-butyric acid methyl ester-blended films. The UV–Vis spectra of the films showed fine structures with pronounced red shifts, and the interchain interaction-induced features were weakly dependent on the MW but significantly dependent on the alkyl side-chain length. The photovoltaic device performances of the P3BT and P3HT samples significantly improved upon blending with a fullerene derivative and subsequent annealing, whereas those of P3OTs mostly degraded, particularly after annealing. The optimal power conversion efficiencies of P3BT, P3HT, and P3OT were 2.4%, 3.6%, and 1.5%, respectively, after annealing with MWs of ~11, ~39, and ~38 kDa, respectively.

Thin‐Film Solar Cells of an Indium‐Modified Silver Antimony Sulfide Selenide Absorber Prepared by Spray Pyrolysis

Silver antimony sulfide (AgSbS2) is considered a promising photovoltaic absorber material because of its suitable bandgap, large absorption coefficient, and environmental friendliness. However, the photovoltaic performance of AgSbS2‐based solar cells is far from expectation and the applications of AgSbS2 are limited by the underdeveloped fabrication technology. Herein, an effective method is developed to improve the photovoltaic performance of devices by adding indium (In) into the Ag–Sb–S system followed by a selenization process. With the addition of In, the morphology uniformity and the crystallinity of the films are simultaneously improved due to the diminished defects such as pinholes and cracks, leading to a better heterojunction interface between Ag1−x In2x Sb1−x S y Se2−y and CdS. The Hall effect measurements demonstrate that the carrier concentration of the films effectively increases to 8.16 × 1014 cm−3 on adding In. The optical characterization suggests that In addition significantly enhances the optical absorption and broadens the absorption wavelength range. Furthermore, the conduction band offset between the absorber and the buffer layer is substantially reduced by adding In, which lessens the carrier recombination at the interface, increasing the carriers transport efficiency. The power conversion efficiency of the Ag1−x In2x Sb1−x S y Se2−y device is largely improved from 0.74% (In/Sb = 0) to 1.98% (In/Sb = 0.47).

(INVITED) Nanoparticles-based photonic metal–dielectric composites: A survey of recent results

This review paper is devoted to description of experimental results with photonic metal-dielectric nanocomposites (MDNCs) based on glasses and liquids with enhanced optical properties due to the presence of metal nanoparticles (NPs). Concerning the MDNCs based on glasses, we describe their fabrication and evaluate the potential of these materials for optical amplification, the improvement in the performance of photovoltaic devices due to luminescent glasses used as cover layers, and the tunable light emission influenced by silver-NPs (Ag-NPs) in triply doped glasses with rare-earth ions. Regarding the MDNCs based on liquid colloids, containing spherical (Ag-NPs), silver nanoprisms (Ag-NPRs), or gold nanorods (Au-NRs), we discuss the synthesis of the materials, their linear and nonlinear optical characterization, and some photonic applications. Recent results using a nonlinearity management procedure to optimize self-action effects and all-optical switches performance are reviewed, as well as the applications of Au-NRs and Ag-NPRs as scatterers for Random Lasers operation. The perspectives for further photonic applications of the MDNCs are also discussed.

Investigating optical adsorption properties of lead‐free double perovskite semiconductors Cs2SnI6−xBrx (x = 0–6) via first principles calculation

AbstractIn this work, the properties of the Br− ion‐doped Cs2SnI6 system (Cs2SnI6−xBrx, x = 0–6) are systematically explored via the first principle calculation. The evolution of Cs2SnI6−xBrx crystal structure in the doping process is obtained by regulating the doping positions where I− ions are replaced with Br− ions, and the changing curve of the bandgap is drawn on the basis of the setting of the U value in I 5p and Br 5p orbits and the accurate description of the bandgap of Cs2SnI6−xBrx with HSE06 hybrid functional. Br− ions doping not only improves the stability of the Cs2SnI6−xBrx structure, but also can adjust its bandgap width. In light of the analysis of gain and loss of electrons among ions and electron density difference during the doping process, the introduction of Br− ions enable Cs2SnI6−xBrx to have a stronger ionic crystal character than Cs2SnI6, which indicates that the Cs2SnI6−xBrx is suitable to be applied to photoelectric devices as a carrier transport layer. The further analysis of the distribution of electronic states density of Cs2SnI6−xBrx and the variation trend of its absorption spectra confirms the transition process of electrons among energy bands, which also reveals the main reason why the performance of current photovoltaic devices based on Cs2SnI6 are unsatisfactory. It is notable that we find Cs2SnI6−xBrx, especially Cs2SnI3Br3 is an ideal material for solar‐blind detection.

Improving the Photovoltage of Blade-Coated MAPbI3 Perovskite Solar Cells via Surface and Grain Boundary Passivation with π-Conjugated Phenyl Boronic Acids.

High-density electronic defects at the surfaces and grain boundaries (GBs) of perovskite materials are the major contributor to suppressing the power conversion efficiency (PCE) and deteriorating the long-term stability of the solar devices. Hence, the judicious selection of chemicals for the passivation of trap states has been regarded as an effective strategy to enhance and stabilize the photovoltaic performance of solar devices. Here, we systematically investigated the passivation effects of four organic π-conjugated phenylboronic acid molecules: phenylboronic acid, 2-amino phenylboronic acid (2a), 3-amino phenylboronic acid (3a), and 4-amino phenylboronic acid (4a) by adding them into the methylammonium lead iodide (MAPbI3) precursor solution. We found that solar devices with an optimized 5% (mol %) 3a treatment achieve the best passivation effect due to the strong cross-linking ability via hydrogen bonding interactions between the I of the [PbI6]4- octahedral network of perovskite films and the cross-linking terminal groups [-B(OH)2, (-NH2)] of 3a. Moreover, the lone pair of electrons on the N atom of an amino group of 3a can passivate the uncoordinated Pb2+ defects at the surface/GBs. As a result, the 3a-passivated device shows a high open-circuit voltage of 1.13 V, which is a 14.1% improvement compared to the control device (0.99 V). Moreover, the reduced defect density and improved carrier lifetimes enabled a high PCE of 18.89% in our blade-coated champion inverted structure of MAPbI3 solar cells, with improved long-term stability.

Impact of selenization temperature on the performance of sequentially evaporated CuInSe2 thin film solar cells

In the present work, modified stacking of sequentially evaporated metallic precursors and two-step selenization was performed to examine the photovoltaic quality of the copper indium diselenide (CISe) thin films. The photovoltaic device performance as a function of selenization temperatures was investigated. Structural analysis showed that the chalcopyrite CISe thin films' crystallinity steadily improved as selenization temperatures increased from 450 to 550 °C. The grain size of the CISe thin films increased up to 1.0 μm with increasing selenization temperatures. The optical band gap energy fluctuated between 0.99 and 1.02 eV depending upon selenization temperatures. The uniform distribution of elements in the films' depth profile was investigated from secondary ion mass spectroscopy (SIMS). Open circuit voltage (Voc) increased from 258 to 543 mV upon increasing the selenization temperature due to enhanced crystal quality and concentration of sodium diffused through the soda-lime glass (SLG) substrate. A fabricated CISe solar cell attained 9.37% of best conversion efficiency at 550 °C of selenization temperature. These results demonstrate the selenization of evaporated metallic precursors at room temperature to synthesize good quality CISe based absorbers, which substantiate the viability of the proposed approach to obtain solar cells with high efficiency.

How to Choose an Interfacial Modifier for Organic Photovoltaics Using Simple Surface Energy Considerations.

Organic photovoltaics are typically composed of at least four different materials, including the donor and acceptor components of the bulk heterojunction, the interfacial layers at each electrode, the electrodes themselves, and solution additives that may persist in the final sandwich structure. The interplay of surface energies between these different layers is profoundly complex, as the deposition and annealing of one layer on top of another may be influenced by the surface energy of these interfaces. While the energy levels of one layer with respect to adjacent layers are important to facilitate charge separation and collection at the electrodes, the relative surface energies of the interfaces in contact with the multicomponent bulk heterojunction can be beneficial or disadvantageous, or be neutral, with respect to the performance of the OPV device. Because the bulk heterojunction is a mixture of donor and acceptor polymers and/or small molecules, the accumulation of one of the components on the underlying electrode interface can be driven by surface energy considerations. A donor- or acceptor-rich interface may affect charge carrier flow to the electrode, thus affecting the overall efficiency. Here, ITO/PEDOT:PSS electrodes in forward organic photovoltaic devices are treated with five different thin interfacial layers to change the relative surface energy of this electrode with respect to the adjacent bulk heterojunction. Contact angle measurements with four probe liquids enable calculation of the surface energies, and the results are compared with the performance of forward-biased organic photovoltaic devices. Time-of-flight secondary ion mass spectrometry results substantiate the predictions of gradients in the bulk heterojunction layers, and grazing-incidence wide-angle X-ray scattering measurements show the impact on the polymer crystallites. Thus, a simple algorithm based on surface energy considerations may inform which interfacial layer for a given bulk heterojunction in an organic photovoltaic device can be the most appropriate.

Unnatural Hygroscopic Property of Nicotinic Acid by Restructuring Molecular Density: Self-Healing Halide Perovskites.

An unnatural hygroscopic property of nonhygroscopic nicotinic acid (NA) is demonstrated by tuning the intermolecular distance. After addition of NA into methylammonium lead iodide, (MAPbI3) NA molecules are preferentially aligned on the interface of the three-dimensional (3D) MAPbI3 crystal structure by a hydrogen bond. This unique behavior allows NA to be used as a versatile additive to improve the water durability of MAPbI3. After exposure under a high humidity atmosphere (RH 100%, 35 °C), MAPbI3 films with NA exhibited self-healing phenomena against moisture while bare MAPbI3 rapidly lost its own intrinsic property. Density functional theory (DFT) calculations were conducted to reveal how H2O molecules can effectively be absorbed by NA according to its planar molecular density. Also, further optimization of photovoltaic device performances was carried out by investigating the relationship between NA concentration and additive alignment.

Impact of inkjet printing parameters on the morphology and device performance of organic photovoltaics

The morphology of the active layer is vital for the device performance of organic electronics. However, most research is primarily focused on the active layer prepared from the spin coating method, which is not suitable for large area manufacturing. The inkjet printing technique has been widely studied in the field of organic electronics due to its advantages of scalability, patternability, and affordability. Nevertheless, morphological changes in the active layer during inkjet printing have received little attention. Herein, for the first time, the influence of inkjet printing parameters on the bulk heterojunction morphology and device performance of organic photovoltaics (OPVs) was systematically studied. The crystal sizes decreased as the inkjet printing speed or substrate temperature increased, which was vital for bimolecular recombination and carrier transport. Moreover, the π–π stacking distance decreased as the inkjet printing speed increased, which is beneficial to charge transport, resulting in improved device performance. However, an uneven film was formed when the substrate temperature increased, degrading the device performance. It is demonstrated that the control of inkjet printing parameters can effectively improve the morphology of active layer, paving guides for high-efficiency large-area production of OPVs and other organic electronics.