Performance Of Light-emitting Diodes Research Articles

Enhancing CdSe/ZnS Quantum-Dot Light-Emitting Diode Performance: The Impact of Thermal Treatment Atmospheres on Fabrication Processes

We explored the thermal treatment impact on the performance of quantum-dot light-emitting diodes (QLEDs). The QLEDs comprised multiple layers: a 2.2-μm thick epoxy buffer layer; a bottom cathode composed of 12-nm MoOx/10-nm Ag/12-nm MoOx; a 20-nm ZnO electron transporting layer (ETL); a 10-nm CdSe/ZnS quantum dot light emission layer (EML); a 40-nm 4,4′,4″-Tris(carbazol-9-yl) triphenylamine hole transporting layer; a 10-nm WOx hole injection layer; and a 100-nm Ag top anode. We applied thermal treatments to the cathode, ETL, and EML separately to assess their effects on the QLEDs. Additionally, we evaluated the impact of the thermal treatment atmosphere. Vacuum thermal treatment on the cathode and EML resulted in minor improvements in QLED performance, whereas treatment of the ETL led to a decline in performance. In contrast, air thermal treatment on the cathode and EML decreased QLED performance but significantly improved it by 15% in current efficiency when applied to the ETL. The performance differences attributable to the thermal treatment atmosphere are likely due to ligand removal and oxidation processes, facilitated by thermal energy and oxygen. Our study highlights that air thermal treatment on the ETL substantially improves QLED performance, offering crucial insights into the significance of thermal treatment in QLED development.

Transparent radiative cooling cover window for flexible and foldable electronic displays

Transparent radiative cooling holds the promise to efficiently manage thermal conditions in various electronic devices without additional energy consumption. Radiative cooling cover windows designed for foldable and flexible displays could enhance cooling capacities in the ubiquitous deployment of flexible electronics in outdoor environments. However, previous demonstrations have not met the optical, mechanical, and moisture-impermeable criteria for such cover windows. Herein, we report transparent radiative cooling metamaterials with a thickness of 50 microns as a cover window of foldable and flexible displays by rational design and synthesis of embedding optically-modulating microstructures in clear polyimide. The resulting outcome not only includes excellent light emission in the atmospheric window under the secured optical transparency but also provides enhanced mechanical and moisture-impermeable properties to surpass the demands of target applications. Our metamaterials not only substantially mitigate the temperature rise in heat-generating devices exposed to solar irradiance but also enhance the thermal management of devices in dark conditions. The light output performance of light-emitting diodes in displays on which the metamaterials are deployed is greatly enhanced by suppressing the performance deterioration associated with thermalization.

Surface Treatment with Tailored π-Conjugated Fluorene Derivatives Significantly Enhances the Performance of Perovskite Light-Emitting Diodes.

Surface defect passivation and carrier injection regulation have emerged as effective strategies for enhancing the performance of perovskite light-emitting diodes (Pero-LEDs). It usually requires two functional molecules to realize defect passivation and carrier injection regulation separately. In other words, developing one single molecule possessing these capabilities remains challenging. Herein, we utilized π-conjugated fluorene derivatives as surface treatment materials, 9,9-Spirobi[fluorene] (SBF), 9,9-Spirobifluoren-2-yl-diphenylphosphine oxide (SPPO1), and 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), to investigate the influence of their chemical structure on device optoelectronic performance, especially for defect passivation and carrier injection regulation. Consequently, the passivation capability of double-bonded SPPO13 surpassed single-bonded SPPO1 and nonbonded SBF, which all showed excellent electron transport properties, enhancing electron injection. The maximum external quantum efficiencies (EQE) for Pero-LEDs treated with SBF, SPPO1, and SPPO13 were 8.13, 17.48, and 22.10%, respectively, exceeding that of the derivative-free device (6.55%). Notably, SPPO13-treated devices exhibited exceptional reproducibility, yielding an average EQE of 20.00 ± 1.10% based on 30 devices. This result emphasizes the potential of tailored fluorene derivatives for enhancing the device performance of Pero-LEDs.

Effect of adjusting charge transport on optoelectronic performances of polymer light-emitting diodes based on SY-PPV

Effect of adjusting charge transport on optoelectronic performances of polymer light-emitting diodes based on SY-PPV

Controlling Tin Halide Perovskite Oxidation Dynamics in Solution for Perovskite Optoelectronic Devices.

As a leading contender to replace lead halide perovskites, tin-based perovskites have demonstrated ever increasing performance in solar cells and light-emitting diodes (LEDs). They tend to be processed with dimethyl sulfoxide (DMSO) solvent, which has been identified as a major contributor to the Sn(II) oxidation during film fabrication, posing a challenge to the further improvement of Sn-based perovskites. Herein, we use NMR spectroscopy to investigate the kinetics of the oxidation of SnI2, revealing that autoamplification takes place, accelerating the oxidation as the reaction progresses. We propose a mechanism consistent with these observations involving water participation and HI generation. Building upon these insights, we have developed low-temperature Sn-based perovskite LEDs (PeLEDs) processed at 60 °C, achieving enhanced external quantum efficiencies (EQEs). Our research underscores the substantial potential of low-temperature DMSO solvent processes and DMSO-free solvent systems for fabricating oxidation-free Sn-based perovskites, shaping the future direction in processing Sn-containing perovskite materials and optoelectronic devices.

Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers

Quantum-dot light-emitting diodes (QLED) have become a research trend in the field of new displays due to their low cost, wide color gamut, narrow bandwidth, and characteristics that enable production through the solution-gel method. However, the electrical performance of QLED is consistently constrained by energy losses and imbalanced charge carrier injection. This motivates our focus on exciton recombination and energy losses within the quantum-dot layer to enhance the electrical efficiency of QLED. In this work, we introduce a method using a CdZnS quantum dot (B-QD) interlayer to modulate energy transfer and charge carrier transport in QLED devices employing CdSe quantum dot (G-QD) as the emissive layer. By strategically incorporating a B-QD layer between the G-QD and HTL/ETL, we facilitate energy transfer due to the overlap between the excitation wavelength of B-QD and the absorption wavelength of G-QDs. This leads to enhanced energy injection in QLED devices, resulting in a high current efficiency of 39.54 Cd/A and a peak brightness of 522,272 cd/m2 for efficient QLED. The corresponding external quantum efficiency (EQE) is greatly improved from 5.62 % to 9.4 %. Our work provides a straightforward and effective approach to modulate exciton recombination and energy injection and further can be applicable to other photo-electronics devices.

Decoupling excitons from high-frequency vibrations in organic molecules

The coupling of excitons in π-conjugated molecules to high-frequency vibrational modes, particularly carbon–carbon stretch modes (1,000–1,600 cm−1) has been thought to be unavoidable1,2. These high-frequency modes accelerate non-radiative losses and limit the performance of light-emitting diodes, fluorescent biomarkers and photovoltaic devices. Here, by combining broadband impulsive vibrational spectroscopy, first-principles modelling and synthetic chemistry, we explore exciton–vibration coupling in a range of π-conjugated molecules. We uncover two design rules that decouple excitons from high-frequency vibrations. First, when the exciton wavefunction has a substantial charge-transfer character with spatially disjoint electron and hole densities, we find that high-frequency modes can be localized to either the donor or acceptor moiety, so that they do not significantly perturb the exciton energy or its spatial distribution. Second, it is possible to select materials such that the participating molecular orbitals have a symmetry-imposed non-bonding character and are, thus, decoupled from the high-frequency vibrational modes that modulate the π-bond order. We exemplify both these design rules by creating a series of spin radical systems that have very efficient near-infrared emission (680–800 nm) from charge-transfer excitons. We show that these systems have substantial coupling to vibrational modes only below 250 cm−1, frequencies that are too low to allow fast non-radiative decay. This enables non-radiative decay rates to be suppressed by nearly two orders of magnitude in comparison to π-conjugated molecules with similar bandgaps. Our results show that losses due to coupling to high-frequency modes need not be a fundamental property of these systems.

Recent Developments in Quantum Dot Patterning Technology for Quantum Dot Display

Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.

Effective donor and acceptor modifications of carbazole-benzonitrile thermally activated delayed fluorescence molecules enabling high-performance OLEDs

Carbazole-benzonitrile derivatives (CzBNs) have great potential to enable thermally activated delayed fluorescence (TADF) molecules with both high efficiency and good stability simultaneously. However, the device performances of most CzBN-based organic light-emitting diodes (OLEDs) still lag behind other types of TADF molecules. In this work, we proposed a design strategy to construct efficient CzBN-TADF molecules through acceptor and donor modifications. The cyano-modified acceptor enables the extension of the lowest unoccupied molecular orbital while mostly preserving the overlapped area with the highest occupied molecular orbital. The optimized distributions of frontier molecular orbitals contribute to tiny singlet-triplet energy gaps while maintaining a high radiative decay rate. The incorporation of tert-butyl units in the donor groups further enhances the TADF property of resulted tPCNBN molecule due to suppressed non-radiative decay and reduced exciton self-quenching. Accordingly, OLEDs based on tPCNBN present the best device performances, such as a maximum external quantum efficiency of 33.1 % at 400 cd m−2, which is still as high as 26.3 % at a high luminance of 4000 cd m−2, demonstrating relatively low efficiency roll-off. These results confirm the effectiveness of the proposed design strategy in developing efficient and stable CzBN-TADF materials and devices.

Charge Carrier Regulation for Efficient Blue Quantum-Dot Light-Emitting Diodes Via a High-Mobility Coplanar Cyclopentane[b]thiopyran Derivative.

The performance of blue quantum dot light-emitting diodes (QLEDs) is limited by unbalanced charge injection, resulting from insufficient holes caused by low mobility or significant energy barriers. Here, we introduce an angular-shaped heteroarene based on cyclopentane[b]thiopyran (C8-SS) to modify the hole transport layer poly-N-vinylcarbazole (PVK), in blue QLEDs. C8-SS exhibits high hole mobility and conductivity due to the π···π and S···π interactions. Introducing C8-SS to PVK significantly enhanced hole mobility, increasing it by 2 orders of magnitude from 2.44 × 10-6 to 1.73 × 10-4 cm2 V-1 s-1. Benefiting from high mobility and conductivity, PVK:C8-SS-based QLEDs exhibit a low turn-on voltage (Von) of 3.2 V. More importantly, the optimized QLEDs achieve a high peak power efficiency (PE) of 7.13 lm/W, which is 2.65 times that of the control QLEDs. The as-proposed interface engineering provides a novel and effective strategy for achieving high-performance blue QLEDs in low-energy consumption lighting applications.

Copper(I) Iodide Thin Films: Deposition Methods and Hole-Transporting Performance.

The pursuit of p-type semiconductors has garnered considerable attention in academia and industry. Among the potential candidates, copper iodide (CuI) stands out as a highly promising p-type material due to its conductivity, cost-effectiveness, and low environmental impact. CuI can be employed to create thin films with >80% transparency within the visible range (400-750 nm) and utilizing various low-temperature, scalable deposition techniques. This review summarizes the deposition techniques for CuI as a hole-transport material and their performance in perovskite solar cells, thin-film transistors, and light-emitting diodes using diverse processing methods. The preparation methods of making thin films are divided into two categories: wet and neat methods. The advancements in CuI as a hole-transporting material and interface engineering techniques hold promising implications for the continued development of such devices.

Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode

Increasing the reflection of p-side is an effective way to improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we propose a full-coverage Al reflector (FAR) and a highly reflective Ni/Rh p-electrode to enhance the performance of deep ultraviolet (DUV) FCLEDs. The physical mechanism for the impact of the FAR and Ni/Rh electrode on the light extraction efficiency (LEE) is discussed theoretically. Simulations demonstrate that the combination of the FAR and Ni/Rh electrode improves the LEEs of transverse electric- and transverse magnetic-polarized light by 13.62% and 27.08%, respectively. At an injection current of 100 mA, the fabricated DUV FCLEDs with FAR and Ni/Rh electrode exhibits an external quantum efficiency of 4.01% and a wall plugging efficiency of 2.92%, which are 16.85% and 13.18% higher than those of conventional DUV FCLEDs, respectively. These results support the promise of the FAR and Ni/Rh electrode for high-power DUV LED applications.

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

In this paper, an n-i-p-type GaN barrier for the final quantum well, which is closest to the p-type GaN cap layer, is proposed for nitride light-emitting diodes (LEDs) to enhance the confinement of electrons and to improve the efficiency of hole injection. The performances of GaN-based LEDs with a traditional GaN barrier and with our proposed n-i-p GaN barrier were simulated and analyzed in detail. It was observed that, with our newly designed n-i-p GaN barrier, the performances of the LEDs were improved, including a higher light output power, a lower threshold voltage, and a stronger electroluminescence emission intensity. The light output power can be remarkably boosted by 105% at an injection current density of 100 A/cm2 in comparison with a traditional LED. These improvements originated from the proposed n-i-p GaN barrier, which induces a strong reverse electrostatic field in the n-i-p GaN barrier. This field not only enhances the confinement of electrons but also improves the efficiency of hole injection.

Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO2 as electron transport layers.

Next-generation display and lighting based on quantum dot light-emitting diodes (QLEDs) require a balanced electron injection of electron transport layers (ETLs). However, classical ZnO nanoparticles (NPs) as ETLs face inherent defects such as excessive electron injection and positive aging effects, urgently requiring the development of new types of ETL materials. Here, we show that high stability SnO2 NPs as ETL can significantly improve the QLED performance to 100567 cd·m-2luminance, 14.3% maximum external quantum efficiency, and 13.1 cd·A-1 maximum current efficiency using traditional device structures after optimizing the film thickness and annealing the temperature. Furthermore, experimental tests reveal that by doping Zr4+ ions, the size of SnO2 NPs will reduce, dispersion will improve, and energy level will shift up. As expected, when using Zr-SnO2 NPs as the ETL, the maximum external quantum efficiency can reach 16.6%, which is close to the state-of-the-art QLEDs based on ZnO ETL. This work opens the door for developing novel, to the best of our knowledge, type ETLs for QLEDs.

Improved performance in quantum-dot light-emitting diodes through current annealing

The impact of metallic diffusion, stemming from the thermal evaporation process of electrodes, exerts a substantial influence on solution-processed quantum-dot light-emitting diodes (QD-LEDs). This study highlights a significant enhancement in the performance of QD-LEDs achieved through post-metal-evaporation current annealing. The choice of different metal electrodes emerges as a critical factor affecting QD-LED performance during current annealing. In the case of red QD-LEDs with an Al cathode, the maximum external quantum efficiency (EQE) surged from 7.0% to an impressive 14.1%. Conversely, QD-LEDs with an Ag cathode exhibited a more modest improvement, progressing from 10.8% to 12.4%. Notably, an Al/Ag composite electrodes demonstrated the potential for further enhancement, achieving a remarkable maximum EQE of 18.3%. The observed performance improvements can be attributed to the formation of metal diffusion-induced Al-doped ZnO, facilitating electron injection, and Al-oxidized passivated quantum dots (QDs), effectively mitigating metal-induced quenching following current annealing. This study conclusively demonstrates that the application of current annealing can effectively counteract the adverse effects of metal diffusion in QD-LEDs, presenting itself as a promising method for elevating the overall performance of quantum-dot light-emitting diodes.

Improved performance of quasi-two dimensional perovskite light-emitting diodes with l-phenylalanine-doped PEDOT:PSS hole transport layer

Improved performance of quasi-two dimensional perovskite light-emitting diodes with l-phenylalanine-doped PEDOT:PSS hole transport layer

Understanding of complex spin up-conversion processes in charge-transfer-type organic molecules

Despite significant progress made over the past decade in thermally activated delayed fluorescence (TADF) molecules as a material paradigm for enhancing the performance of organic light-emitting diodes, the underlying spin-flip mechanism in these charge-transfer (CT)-type molecular systems remains an enigma, even since its initial report in 2012. While the initial and final electronic states involved in spin-flip between the lowest singlet and lowest triplet excited states are well understood, the exact dynamic processes and the role of intermediate high-lying triplet (T) states are still not fully comprehended. In this context, we propose a comprehensive model to describe the spin-flip processes applicable for a typical CT-type molecule, revealing the origin of the high-lying T state in a partial molecular framework in CT-type molecules. This work provides experimental and theoretical insights into the understanding of intersystem crossing for CT-type molecules, facilitating more precise control over spin-flip rates and thus advancing toward developing the next-generation platform for purely organic luminescent candidates.

Fabrication for formanmidinium lead bromide perovskite for light emission

In recent decades, perovskite semiconductors have been developed rapidly with excellent performance in light-emitting diodes (LEDs) and solar cells (SCs). Recent reports indicated that both the highest external quantum efficiency (EQE) of perovskite materials (PEM) that can be used for light-emitting diodes and the power conversion efficiency (PCE) of perovskite solar cells have reached a very high value compared to the previous. In this study, electroluminescence from formamidinium lead bromide perovskite is presented. The spin-coating method was used to procedure simple devices with a fluorine-doped tin oxide/formamidinium lead bromide perovskite/fluorine-doped tin oxide structure. The structure showed a green luminescence with the center wavelength at 545 nm. In the future, we will study the fabrication of devices with the structural layers: fluorine-doped tin oxide / poly(3,4-ethylene dioxythiophene) : poly(styrene sulfonate) / perovskite / electron transport layer / Ag to create so-called PeLEDs.

Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance.

With pixel miniaturization, the performance of high-resolution quantum dot light-emitting diodes (QLEDs) usually degrades. Considering the dimension of ultrasmall pixels, herein, a barrier architecture based on localized surface plasmon resonance (LSPR) that promotes the radiative recombination of neighboring quantum dots is rationally designed to improve the device performance. Au nanoparticles (NPs) are embedded in an insulating polymer to form a honeycomb-patterned barrier layer via the nanoimprint process. Each pixel fabricated in the void area (average diameter of 1.5 μm) of the barrier layer is surrounded by a number of LSPR-NPs to enhance the luminescence. The resultant green QLEDs with a resolution of 9027 pixels per inch show a maximum external quantum efficiency of 11.1%, a 42.8% enhancement compared to the control device. Additionally, the lifetime of high-resolution QLEDs is obviously improved by the LSPR effect.

On-Shelf and Operational Decay Dynamics of Self-Healing Quasi-Two-Dimensional Perovskite Light-Emitting Devices.

Currently, the external quantum efficiency (EQE) performance of perovskite light-emitting diodes (PeLEDs) is approaching its theoretical limit. The main drawback of PeLEDs is their stability. Ion migration in the perovskite layer is one of the main causes of the operational decomposition of PeLEDs. Here, we find that butylammonium-based quasi-two-dimensional (quasi-2D) PeLEDs show self-healing ability, revealing the existence of ion migration in the fabricated perovskite layer. Then, on the basis of the analysis of ∼170 operational decay EQE curves, patterns of on-shelf and operational decay in self-healing quasi-2D PeLEDs have been identified. The uneven distributions of resistance on the perovskite film surface are proposed to cause secondary electric fields. The electroluminescent scintillation in certain regions results in fluctuating electroluminescence of PeLEDs, further proving the existence of microcosmic steric ion movement under secondary electric fields. Our work explores the decay patterns of self-healing PeLEDs and highlights the impact of steric ion movements on the decay processes of PeLEDs.