Pb(Mg1/3Nb2/3)O3-PbTiO3 Research Articles

Dielectric and structural studies of ferroelectric phase evolution in dipole‐pair substituted barium titanate ceramics

AbstractBa{[Gax,Tax]Ti(1−2x)}O3 ceramics with x equal to 0, 0.0025, 0.005, 0.01, 0.025, and 0.05 have been prepared by conventional solid‐state reaction. Structural and dielectric characterization have been performed to investigate the effect of dipole‐pair substitution concentration on the macroscopic dielectric properties. Ba{[Gax,Tax]Ti(1−2x)}O3 evolves from a classic ferroelectric to a diffuse phase transition (DPT) as x increases. Ba{[Gax,Tax]Ti(1−2x)}O3 for x ≥ 0.01 possesses diffuseness parameters comparable to Pb(Mg1/3Nb2/3)O3‐PbTiO3 (PMN‐PT) and recently reported (Ba0.97Pr0.03)(Ti0.9425Ce0.05)O3 (BPTC), yet it lacks the frequency and temperature dependence of Tm necessary to be a strictly defined relaxor ferroelectric. Additionally, Ba{[Ga0.05,Ta0.05]Ti0.9}O3 possesses a relative permittivity, ɛr, of 700 ± 16% and dissipation factor less than 0.05 at 10 kHz within the temperature range [−75°C, 120°C]. In comparison to BaTiO3, Ba{[Gax,Tax]Ti(1−2x)}O3 possesses enhanced electrical resistivity at and above room temperature. In situ XRD, including Rietveld refinement, have been performed to determine the lattice parameter, coefficient of thermal expansion, and phase transition temperature (Tc) of each composition within the temperature range [RT, 1000°C], thus linking the dielectric properties with the material's structure. These studies have been corroborated by temperature‐dependent Raman spectroscopy to compare the Tc determined by electrical and structural characterization. The properties of Ba{[Gax,Tax]Ti(1−2x)}O3 are discussed in context with available models that describe donor and acceptor dopants spatially separated in the parent matrix, inter‐relating lattice parameter, Curie temperature, and other material properties.

Electric-field tuning of nonvolatile resistance change and magnetic properties of LaMnO3/PMN-PT(0 1 1) heterostructure

The electric-field control of resistance change (ΔR/R) and magnetic properties has been investigated in the LaMnO3(LMO)/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT)(0 1 1) heterostructure. When the unipolar electric field (E) increases beyond the coercive field of PMN-PT, the ΔR/R vs E curve transforms from a loop-like behavior to a butterfly-like one. The electric-field-induced non-linear strain effect in the PMN-PT substrate realizes the modulation between low and high resistance states at room temperature. Moreover, different freezing temperatures of the LMO film are observed as the PMN-PT substrate is in the fully negative (Pr-) and partially positive (Pr//) polarization states. The observation of less magnetization for Pr// state than that for Pr- state indicates that the in-plane tensile strain is beneficial to the Jahn-Teller distortion.

Investigation of dielectric and piezoelectric properties in aliovalent Eu3+‐modified Pb(Mg1/3Nb2/3)O3‐PbTiO3 ceramics

AbstractRare earth (Eu3+)‐modified Pb(Mg1/3Nb2/3)O3‐PbTiO3 (PMN‐PT) polycrystalline ferroelectric ceramics were fabricated by high‐temperature solid‐state sintering, the phase structure, dielectric and piezoelectric properties were investigated. Eu3+ addition was found to significantly improve dielectric and piezoelectric properties of PMN‐PT, where the optimized properties were achieved for the composition of 2.5 mol%Eu: 0.72PMN‐0.28PT, with the piezoelectric d33 = 1420 pC/N, dielectric εr = 12 200 and electromechanical k33 = 0.78, respectively. All these results indicate that the Eu3+‐doped PMN‐PT ceramics are promising candidates for high‐performance room‐temperature piezoelectric devices.

Strain anisotropy and magnetic domain structures in multiferroic heterostructures: High-throughput finite-element and phase-field studies

Understanding magnetic domain structures and their responses to electric fields in multiferroic heterostructures is critical to the design of electric-field-driven spintronic devices. High-throughput finite-element and phase-field simulations are performed to probe the piezoelectric strain anisotropy and its relaxation, magnetic domain structures and their responses to applied voltages as function of the in-plane dimensions and thickness of the magnetic Ni nanoislands grown on a Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) membrane. The piezoelectric strain anisotropy is found to increase with the in-plane aspect ratio, but it can be significantly relaxed, as large as >80%, in nanoislands of thickness larger than >15 nm. Magnetic domain diagrams are established to identify the domain structures for Ni nanoislands of different lengths of in-plane major and minor axis, as well as thickness. When a voltage is applied to the multiferroic heterostructure, the single-domain magnetic domain can be switched by the piezoelectric strain, whereas the vortex domain is not switched. However, for a multiferroic heterostructure with a thick nanoisland wherein most of the piezoelectric strain is relaxed, the single-domain magnetic domain shows a weak response to the voltage and cannot be switched. The effect of thickness variation in real magnets on the switching is also discussed. The present results are expected to provide guidance to the understanding and design of multiferroic nanostructures for achieving electric-field-modulated magnetic properties.

2-Dimensional rGO introduced PMN-PT and P(VDF-TrFE) flexible films for enhanced piezoelectric energy harvester

Piezoelectric materials have excellent piezoelectric and dielectric properties for versatile device applications. However, they have brittle properties, particularly under mechanical impulse force. As a result, there have been many attempts to improve their brittle properties by mixing in elastic materials. Here, for the first time, reduced graphene oxide (rGO) was introduced to the Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) and poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) polymer composite films, and showed the highest value of piezoelectric and energy density for flexible energy generation applications. rGO has conducting properties with 2-dimensional structure. This rGO can also be prepared through easy processing. 2-dimensional structured rGO serves as a floating electrode in PMN-PT/polymer composite flexible films. Therefore, a floating electrode can attract electrons in piezoelectric composite materials so as to enhance the energy generation properties. By introducing the rGO based floating electrodes into the PMN-PT and P(VDF-TrFE) composite, the generated output energy density was increased from 0.70 mJ/cm3 to 1.2 mJ/cm3. This the generated output energy density was the recorded outstanding value among the flexible composite films.In this paper, the effects of rGO on the properties of PMN-PT/polymer composites will be investigated and discussed.

Interfacial Effect Enhanced Electric Field Control of the Magnetism in Pt/Fe/PMN-PT Heterostructures

The strain and charge comediated magnetoelectric coupling effect has been investigated in the Pt/Fe/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) heterostructures. An oxidized interfacial layer FeOx is formed at the Fe/PMN-PT interface, which assists in realizing the multistate magnetization by the electric field. The remnant magnetization variation under the positive polarization reaches ∼120% in the (011) Pt/Fe(2 nm)/PMN-PT heterostructure along the in-plane [01–1] direction, which is larger than that (∼67% and ∼1.8%) of the Pt/Fe/PMN-PT heterostructures with 5 and 11 nm Fe films. The enhanced electric field manipulation of magnetization variation as the thickness of the Fe film decreases indicates an interfacial dominant magnetoelectric coupling effect. Moreover, the asymmetrical magnetization variation under the positive and negative electric fields originates from the ferroelectric polarization induced carrier density change and redox–oxidation reactions based on the strain effect at the interfacial FeOx la...

Domain growth dynamics in PMN-PT ferroelectric thin films

Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) ferroelectric thin films have been widely used in many areas due to the outstanding piezoelectric and electromechanical properties. Although many studies have been operated on the properties and applications of PMN-PT films, few researches focused on the domain growth dynamics of these materials. In this paper, the domain growth dynamics of PMN-PT thin films were investigated using piezoelectric force microscopy. The shape and the size of the artificial domains were imaged and calculated to depict the relationship between the imposed pulse voltage and the domain behaviors. A linear relationship between the pulse voltage and the domain size could be obtained before the saturation of polarization. Meanwhile, the domain size and the duration show the logarithmic relationship, and such domain growth dynamics were explained according to previous theories.

Strain Anisotropy and Magnetic Domain Structures in Multiferroic Heterostructures: High-Throughput Finite-Element and Phase-Field Studies

Understanding magnetic domain structures and their responses to electric fields in multiferroic heterostructures is critical to the design of electric-field-driven spintronic devices. High-throughput finite-element and phase-field simulations are performed to probe the piezoelectric strain anisotropy and its relaxation, magnetic domain structures and their responses to applied voltages as function of the in-plane dimensions and thickness of the magnetic Ni nanoislands grown on a Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) membrane. The piezoelectric strain anisotropy is found to increase with the in-plane aspect ratio, but it can be significantly relaxed, as large as >80%, in nanoislands of thickness larger than >15 nm. Magnetic domain diagrams are established to identify the domain structures for Ni nanoislands of different lengths of in-plane major and minor axis, as well as thickness. For Ni nanoislands with a circular in-plane geometry, an analytical function describing the relationship between the critical thickness hcritical and the in-plane diameter is obtained based on high-throughput calculations. When a voltage is applied to the multiferroic heterostructure, the single-domain magnetic domain can be switched by the piezoelectric strain, whereas the vortex domain is not switched. However, for a multiferroic heterostructure with a thick nanoisland wherein most of the piezoelectric strain is relaxed, the single-domain magnetic domain shows a weak response to the voltage and cannot be switched by the voltage. The present results are expected to provide guidance to the understanding and design of multiferroic nanostructures for achieving electric-field-modulated magnetic properties.

Effect of poling orientation on piezoelectric materials operating in longitudinal mode

This study puts forward the consequence of poling direction on piezoelectric materials operating in longitudinal (d33) mode. It has been mathematically presented that piezoelectric strain coefficients get altered due to poling direction. Further, this concept was developed theoretically to investigate the effect of poling angle on sensing and actuation capabilities of the piezoelectric materials particularly operating in d33 mode. To demonstrate the effect, a cantilever based interdigitated electrode configuration has been considered with different materials including 0.3BaTiO3-0.7NaNbO3 (BT-NNb), K0.475Na0.475Li0.05(Nb0.92Ta0.05Sb0.03) (KNLNTS), Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) and Pb[ZrxTi1-x] (PZT-5A) . In addition to poling direction, the effect of electrode width and electrode separation distance was also investigated. Upon poling tuning, enhanced was displayed only by BT-NNb and PMN-PT due to large difference between magnitudes of piezoelectric strain coefficients. On the other hand, in terms of sensing and actuation substantial increment was observed these two materials while the performance of PZT-5A deteriorated with increasing poling angle. An increment of 4400% and 87% was observed in BT-NNb and PMN-PT respectively in actuation while sensing performance increased by ∼2460% and ∼210% for BT-NNb and PMN-PT respectively.

Large Piezoelectric Stability and Low Polarization Fatigue in 6Pb(Sc1/2Nb1/2)O3-70Pb(Mg1/3Nb2/3)O3-24PbTiO3 Crystals

The electrical properties and polarization fatigue of [001]-oriented 6Pb(Sc1/2Nb1/2)O3-70Pb(Mg1/3Nb2/3)O3-24PbTiO3 (6PSN-70PMN-24PT) crystals were investigated. Compared with binary Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) crystals, the ternary 6PSN-70PMN-24PT crystal showed a higher rhombohedral → tetragonal transition temperature (TR-T = 120°C) and a larger coercive field (Ec = 4 kV/cm). It was found that the piezoelectric constant (d33 ≈ 1200 pC/N) and electromechanical coupling coefficient (kt ≈ 61%) were weakly dependent on the thermal annealing temperature (Ta), maintaining over 90% of the original value at Ta < 120°C, indicating excellent piezoelectric thermal stability. Electric fatigue measurements showed that the ternary 6PSN-70PMN-24PT crystal exhibited slight fatigue characteristics below 105 bipolar cycles, while the binary PMN-PT crystal exhibited sudden polarization degradation when the cycle numbers were above 102 cycles. The improved fatigue stability for 6PSN-70PMN-24PT crystals was attributed to the large coercive field. The physical mechanisms of the enhanced coercive field and high transition temperature were discussed based on repulsive energy and polar domains.

Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals.

Single-phase (00 l)-oriented Bi2Te3 topological insulator thin films have been deposited on (111)-oriented ferroelectric 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) single-crystal substrates. Taking advantage of the nonvolatile polarization charges induced by the polarization direction switching of PMN-PT substrates at room temperature, the carrier density, Fermi level, magnetoconductance, conductance channel, phase coherence length, and quantum corrections to the conductance can be in situ modulated in a reversible and nonvolatile manner. Specifically, upon the polarization switching from the positively poled Pr+ state (i.e., polarization direction points to the film) to the negatively poled Pr- (i.e., polarization direction points to the bottom electrode) state, both the electron carrier density and the Fermi wave vector decrease significantly, reflecting a shift of the Fermi level toward the Dirac point. The polarization switching from Pr+ to Pr- also results in significant increase of the conductance channel α from -0.15 to -0.3 and a decrease of the phase coherence length from 200 to 80 nm at T = 2 K as well as a reduction of the electron-electron interaction. All these results demonstrate that electric-voltage control of physical properties using PMN-PT as both substrates and gating materials provides a simple and a straightforward approach to realize reversible and nonvolatile tuning of electronic properties of topological thin films and may be further extended to study carrier density-related quantum transport properties of other quantum matter.

High rhombohedral to tetragonal phase transition temperature and electromechanical response in Pb(Yb1/2Nb1/2)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 ferroelectric system near the morphotropic phase boundary

Relaxor-PT crystals, that is, Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT), have been used in mechanical to electric energy translation devices, such as for high-frequency imaging and underwater detection. However, low temperature usage remains a problem for high temperature applications, which are restricted by rhombohedral to tetragonal phase temperatures (TR-T). In this work, we synthesized a new xPb(Yb1/2Nb1/2)O3-yPb(Sc1/2Nb1/2)O3-0.37PbTiO3 (x = 0.2˜0.45) (xPYN-yPSN-0.37 P T) ternary piezoelectric polycrystalline with high TR-T = 225˜245 °C. For 0.45PYN-0.18PSN-0.37 P T ceramics, the piezoelectric coefficient d33, mechanical coupling factors k33, kp, and kt, and dielectric coefficients εr and TR-T are on the order of 330 pm/V, 68.3%, 54.3%, 49.3%, 930, and 245 °C, respectively. Thermal piezoelectric and ferroelectric behaviors were investigated in 0.45PYN-0.18PSN-0.37 P T polycrystalline, which are good candidates for high temperature piezoelectric application. DSC curves for xPYN-yPSN-0.37 P T systems present two peaks at 1213 and 1291 °C during the cooling process, showing good crystallization behavior and suitability for single crystal growth.

A Micromachined Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystal Composite Circular Array for Intravascular Ultrasound Imaging.

This paper describes the design, fabrication, and characterization of a micromachined high-frequency Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystal/epoxy 1-3 composite ultrasound circular array. The 1-3 composites were fabricated by deep reactive ion etching (DRIE) of PMN-PT single crystal. The feature size of single crystal pillars was 18 μm in diameter. The kerf between pillars was less than 4 μm. A 50-element circular array transducer (radially outward) with the pitch of 100 μm was wrapped around a needle resulting in an outer diameter of 1.7 mm. The array test showed that the center frequency reached 39±2 MHz and -6-dB fractional bandwidth was 82±6%. The insertion loss was -41 dB, and crosstalk between adjacent elements was -24 dB. A radial outward imaging testing with phantom wires (D = 50 μm) was conducted. The image was in a dynamic range of 30 dB to show a penetration depth of 6 mm by using the synthetic aperture method. The -6-dB beam width was estimated to be 60 μm in the axial direction at 3.1 mm distance away from the probe. The results suggest that the 40 MHz micromachined 1-3 composite circular array is promising for intravascular ultrasound (IVUS) imaging applications.

Electric field modulated metastable state magnetization in (Fe/Pt)4/PMN-PT multilayers

In multiferroic heterostructures, the magnetization can be manipulated by electric field instead of magnetic field via magneto-electric coupling, which can effectively upgrade the speed of the spintronic devices and decrease the energy cost. In this work, Fe/Pt multilayers were grown on (110) oriented 0.7 Pb-(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) substrates and their magnetic properties were studied. A magnetic metastable state was formed by properly applying a magnetic field before the electric field was applied. After applying electric fields, the magnetic moments rotated nearly 180°, indicating that the magnetic anisotropy modulation was achieved in the Fe/Pt multilayers. Our work shows an effective way to manipulate the magnetic properties in Fe/Pt multilayers, which is meaningful for the application of spintronic devices.

Reversible modulation of magnetic anisotropy and coercivity triggered by external bias voltage in CoFe2O4/Pb(Mg1/3Nb2/3)O3–PbTiO3 multiferroic heterostructures

Multiferroic materials have been studied extensively in recent years as their abundant fundamental physics and technological applications. As we known, although multi order of ferroics can exist in one compound, these materials usually exhibit weak magnetoelectric coupling and low Curie temperature. Therefore multiferroic heterostructure is employed as a solution for the enhanced magnetoelectric response and its wide temperature survival. In this study, the magnetic property of, especially under electric field, multiferroic heterostructure CoFe2O4/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (CFO/PMN-PT) has been comprehensively explored. By the magneto-optical Kerr effect measurement, it is found that the magnetic properties of CoFe2O4 (CFO) thin film is tunable and reversible by the external electric field as the piezoelectric nature of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT). The in-plane magnetic anisotropy of CFO film is observed distinctly, and the difference value of the coercive field with magnetic field along PMN-PT [0 0 1] and [1 1¯ 0] changes from 608 to 841 Oe by the electric field. The strain dependence of the change of coercive field has been demonstrated by both experimental and theoretical study, revealing the coupling mechanism in the heterostructure. Our result shows that the multiferroic heterostructure CFO/PMN-PT exhibits the application of electric field controlled exchange bias and the electric field assisted data storage device.

Electric field control of non-volatile dynamic magnetic properties of [NiFe/FeMn]N multilayers grown onto PMN-PT substrates

Magnetoelectric coupling between ferroelectric (FE) and ferromagnetic (FM) orders in artificial multiferroic materials can realize regulation of magnetic properties by electric field due to stress transmission. Many studies have shown that the electric field controls magnetization flip. However, previous studies mainly considered measuring dynamic magnetic properties when adding an electric field. This paper fabricated [NiFe/FeMn]N exchange bias multilayer films on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) substrates to control nonvolatile dynamic magnetic properties by electric field. The result showed that the FE heterogeneity due to the exchange biased multilayer film introduced a nonvolatile control in the zero electric field state. Although regulation of static magnetic properties is not significant, dynamic magnetic properties change greatly. The resonance frequency remained almost unchanged for NiFe/FeMn bilayers, but the resonance frequency of the top FM layer improved from approximately 4.15 to 5 GHz for [NiFe/FeMn]2 and [NiFe/FeMn]3 films, measured in the zero electric field state, whereas the bottom FM layer retained almost constant value.

Distinguishing charge and strain coupling in ultrathin (001)-La0.7Sr0.3MnO3/PMN-PT heterostructures

Interfacial charge and strain distributions inside artificial perovskite ABO3 heterostructures often affect intriguing physical properties that are important to device performance. Normally, both charge and strain coexist across the interfaces, and their exact roles in determining the properties remain elusive. In the present work, La0.7Sr0.3MnO3 (LSMO) ultrathin films were grown on (001)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNPT) single-crystal substrates to discriminate between the effect of charge and strain on the transport and magnetoelectric properties. In heterostructures with thicker LSMO films, the strain effect dominates the resistance and the magnetic moment depends on the external electric field. With the decreasing LSMO thickness, the butterfly-like resistance–electric-field (R-E) and magnetization–electric-field (M-E) curves become loop-like, indicating that charge effects dominate strain effects in determining the electric field that controls the transport and magnetic properties. Furthermore, soft-x-ray absorption spectra of 32 and 4 nm LSMO/PMNPT samples at the Mn L edge under an applied electric field of ±6 kV/cm indicate that orbital reconstruction also plays an important role in interfacial magnetoelectric coupling.

Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching

Reversible and nonvolatile electric-field control of the physical properties of topological insulators is essential for fundamental research and development of practical electronic devices. Here, we report the integration of topological insulator films with ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals in the form of ferroelectric field-effect devices that allow us to tune the electronic properties of topological insulator films in a reversible and nonvolatile manner. Specifically, gating of Cr-doped Bi2Se3 films with the PMN-PT layer is shown to provide a means to reversibly tune and modulate the carrier density and carrier type, as well as its other properties, such as the conductance, magnetoconductance, Fermi level, phase coherence length, and screening factor of electron–electron interaction by polarization switching at room temperature. These findings provide a simple and direct approach for probing the quantum transport properties of topological insulator films through ferroelectric gating by using PMN-PT. The combination of topological insulators with both ferroelectrically and piezoelectrically active PMN-PT thus offers a promising step toward exploring topological insulator/ferroelectric(piezoelectric) hybrid devices that could utilize not only the ferroelectric field-effect of topological insulator/PMN-PT structures but also the unique properties of respective materials.

Electric field and frequency dependent scaling behavior of dynamic hysteresis in relaxor-based ferroelectric 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal

The evolution of the dynamic hysteresis with electrical field amplitude (E0) and frequency (f) in the relaxor-based ferroelectric 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 (PMN-29PT) single crystal has been investigated systematically. Our results showed that the electric field dependent scaling relationship in PMN-29PT single crystal can be divided to three regions, and the hysteresis area <A> follows the power law <A>∝fαE0β in the low and high E0 regions, but the power law is not obeyed in the intermediate region due to the complex collective contributions of 180° and non-180° domains. The frequency dependent scaling relationship can be separated into two regions, and presents a unique behavior when the field level E0 is equal or lower than the coercive field Ec. The hysteresis area decreases continually with the increase of frequency when E0 < Ec, while <A> first increases then decreases for high E0 situation (E0≥2Ec). Related electrical field and frequency dependent polarization reversal mechanisms are proposed based on the experimental observations.

Operational stability of textured PMN-PT and PMN-PZT ceramics under combined thermal, electrical and mechanical excitation

The electromechanical response of Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(Mg1/3Nb2/3)O3-Pb(Zr,Ti)O3 (PMN-PZT) textured ceramics is evaluated. Results reveal that crystallographic texturing may enhance electromechanical performance without sacrificing mechanical robustness. The presence of grain boundaries enhance material stability but with increased dielectric and mechanical losses. Following lessons learned during relaxor piezocrystal development, doping of PMN-PT is explored to reduce losses while ternary PMN-PZT is investigated for its increased thermal and electrical stability. Correlations with piezocrystals are drawn and the results confirm the promise of textured ceramic electroactive material, but demonstrate the need to reduce losses and increase thermal, electrical and mechanical stability.