Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Research Articles

Huge piezoelectricity and electro-optic effects in rhombohedral relaxor ferroelectric single crystals by Sm3+ doping

In recent years, relaxor ferroelectric single crystals have attracted people's attention and research because of their excellent piezoelectric properties at morphotropic phase boundary(MPB). The ternary system Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) crystals have higher Curie temperature and coercive field, which have the opportunity to be applied in high-temperature devices. The crystals of the rhombohedral phase have better stability, but their performance is not as good as that of the MPB component crystals. In this paper, the piezoelectric properties of rhombohedral PIN-PMN-28PT single crystals are improved by Sm3+ doping. The piezoelectric coefficient d33 after AC polarization along [001] direction can reach 3125pC/N, which is 60% higher than that of undoped crystals. Meanwhile, the crystal exhibits excellent optical performance after DC polarization along [110] direction. The crystal has an effective electro-optic coefficient of 386 pm/V at room temperature and a stable frequency-dependent characteristic, which is expected to be an ideal material for electro-optic devices.

Thermal expansion properties of three-dimensional relaxor ferroelectric single crystals

Large-size Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals have been successfully produced. Nevertheless, the susceptibility of these crystals to cracking substantially hampers their application. This study investigates the thermal expansion characteristics of PMN-PT and PIN-PMN-PT crystals oriented along the 〈100〉, 〈110〉, and 〈111〉 directions, revealing no significant anisotropy. The average thermal expansion coefficients for the PMN-PT and PIN-PMN-PT crystals range from 7.77 to 8.21 × 10−6 K−1 and from 6.59 to 6.79 × 10−6 K−1, respectively, within the temperature range of 20 to 600 °C. Interestingly, the PMN-PT and PIN-PMN-PT crystals demonstrate unusual thermal expansion behavior around the phase transition temperature. The magnitudes of their thermal expansion coefficients are comparable to those of certain commercial crystals but are lower than that of platinum. The main causes inferred for crystal cracking include the pressure exerted by the platinum crucible and the abnormal thermal expansion behavior around the phase transition temperature.

Comparing the performance fluctuation of direct and alternating current poling Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric single crystals

Large-size Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) based ferroelectric single crystals have been grown successfully by the vertical Bridgman method for application in the field of high-end piezoelectric devices. The piezoelectric and dielectric performance uniformity of PMN-PT based ferroelectric crystals is a critical application requirement. Recently, alternating current poling (ACP) has attracted much attention due to its low cost and high efficiency in improving the piezoelectric properties of PMN-PT based crystals. Here, we report the comparison of the performance fluctuation of direct current poling (DCP) and ACP Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) ferroelectric single crystals grown in the [110] direction using the vertical Bridgman method. The fluctuation of piezoelectric coefficient d33, dielectric constant ɛT33/ɛ0, and dielectric loss tanδ was presented. We found that the average d33 and ɛT33/ɛ0 of ACP samples are 1290 and 1500 pC/N and 3890 and 4290 for two different wafers, which were 18% and 23%, 21% and 26% higher than DCP samples. The tanδ of ACP samples was much lower than that of DCP samples. The DCP and ACP samples exhibited the close data of the fluctuation ratios of d33 and ɛT33/ɛ0. The fluctuation ratios of d33 and ɛT33/ɛ0 for DCP and ACP samples are all less than 10%. This work offers a reference for practical ACP technique applications.

Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization

To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices. Here in this work, we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In1/2Nb1/2)O3Pb(Mg1/3Nb2/3)O3PbTiO3 (PIN-PMN-PT) crystals with a morphotropic phase boundary (MPB) composition. The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization. Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy. Finally, a d33 of 3 300 pC/N and a SE of 0.25% are obtained, nearly 60% higher than that of conventionally poled crystals. Moreover, such a boosting of piezoelectric property is obtained under a maintained Curie temperature. Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal, but also provides a feasible strategy to further improve the property of piezoelectric materials.

High performance high-power textured Mn/Cu-doped PIN-PMN-PT ceramics

Piezoelectric ceramics with combinatory soft and hard characteristics are highly desired for high-power applications. However, it remains grand challenge to achieve simultaneous presence of hard (e.g. high coercive field, Ec; high mechanical quality factor, Qm) and soft (e.g. high piezoelectric constant, d; high electromechanical coupling factor, k) piezoelectric properties in piezoelectric ceramics since the mechanism controlling the hard behavior (pinned domain walls) will significantly reduce the soft behavior. Here, we address this grand challenge and demonstrate <001> textured MnO2 and CuO co-doped Pb(In1/2Nb1/2)O3- Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) ceramics exhibiting ultrahigh combined soft and hard piezoelectric properties (d33 = 713 pC N−1, k31 = 0.52, Qm≈950, Ec = 9.6 kV cm−1, tan δ = 0.45%). The outstanding electromechanical properties are explained by considering composition/phase selection, crystallographic anisotropy and defect engineering. Phase-field model in conjunction with high resolution electron microscopy and diffraction techniques is utilized to delineate the contributions arising from intrinsic piezoelectric response, domain dynamics, and local structural heterogeneity. These results will have significant impact in the development of high-power transducers and actuators.

Scaling effects in the alternating-current poling of thin PIN-PMN-PT single crystals

AC-poling of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals with a thickness of 0.06–0.16 mm was studied in this paper. Compared with DC-poled samples, enhancements in piezoelectric and dielectric properties can be obtained when the thickness is above 0.1 mm. However, inconsistency in poling effects was found in the crystals with thickness below 0.1 mm. To elucidate why such scaling effect arises, surface roughness was measured by an atomic force microscopy to correlate surface morphology and poling effects. It was found that non-uniform surface roughness led to inconsistent and decreased properties. Furthermore, temperature-dependent dielectric permittivity spectra were measured to explore how crystal thickness affects the thermal stability of ferroelectric phases. It is noted that complex changes in crystallographic symmetries emanate by decreasing thickness. Such phenomena can be attributed to more influential effects of surface morphology when thickness is reduced. We hope this work suggests a clue for solving the scaling effects of AC-poling on relaxor-PbTiO3 single crystals.

Large photovoltaic effect with ultrahigh open-circuit voltage in relaxor-based ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics

Recently, the anomalous photovoltaic effect of ferroelectric materials has attracted considerable attention in the construction of efficient solar cells owing to the above-bandgap photovoltage of these materials. In this study, we investigate the anomalous photovoltaic effect of relaxor-based ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIMN-PT) ceramics with large remnant polarization and a narrow optical bandgap. Excellent photovoltaic performance with an ultrahigh open-circuit voltage of 23 V (575 V/cm) is achieved, which is higher than the open-circuit voltages of all reported polycrystalline materials with similar thickness. The phase structure, microstructure morphology, domain structure, ferroelectric and optical characteristics are analyzed, which could provide clues to the origin of the ultrahigh open-circuit voltage of PIMN-PT ceramics. The results suggest that the relaxor-based ferroelectric PIMN-PT system is a potential candidate for photovoltaic solar energy conversion devices.

Enhanced energy harvesting performance of PIN-PMN-PT single crystal unimorph using alternating current poling

In this work, the piezoelectric unimorph of a Pb(In1/2Nb1/2)O3 -Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystal by alternating current poling (ACP) was studied for vibration energy harvesting. The figure of merit of d31×g31 of the 0.25PIN-0.43PMN-0.32PT single crystal was enhanced to be 29.3 × 10−12 m2/N by ACP, which is 1.9 times and 8.9 times as much as that of the 0.25PIN-0.43PMN-0.32PT single crystal and the commercial PZT5H ceramic by direct current poling (DCP), respectively. The piezoelectric unimorph of the 0.25PIN-0.43PMN-0.32PT single crystal by ACP produced the open circuit voltage of 67 Vp and the maximum power of 0.74 mW under on-resonance condition, which were 1.5 times and 1.8 times as much as the 0.25PIN-0.43PMN-0.32PT single crystal unimorph by DCP. Moreover, these were almost 2.4 times more voltage and 5.7 times more power than the PZT5H ceramic unimorph. Even under the off resonance condition, the piezoelectric unimorph of the 0.25PIN-0.43PMN-0.32PT single crystal by DCP and ACP produced 4.4 times and 8.0 times maximum output power as much as the PZT5H ceramic unimorph. ACP is a potential way to further enhance the output voltage and power of the 0.25PIN-0.43PMN-0.32PT single crystal unimorph for energy harvesting.

A bending-bending mode piezoelectric actuator based on PIN-PMN-PT crystal stacks

Piezoelectric actuators are important elements for compact actuations with high precision; however, driving voltage reduction is demanding for integration and minimization of precision actuations. In this work, we proposed a bending-bending mode piezoelectric actuator based on multilayered Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals. Ultrahigh apparent piezoelectric coefficient d33 of ~10,800 pC/N is achieved in four crystal stacks. The crystal stacks are used to fabricate bending-bending mode piezoelectric actuators to reduce driving voltage. Experimental results show that it can produce a maximum traveling velocity of 3.28 mm/s under the driving voltage of 130 Vpp at 1000 Hz and minimum step resolution of 0.35 µm with 25 Vpp driving voltage. Conventional piezoelectric actuators require driving voltage of ~300 Vpp for similar motion velocity. This work demonstrates advantages of crystal stacks in piezoelectric actuators and potential applications in low-voltage precise actuations.

Design morphotropic phase boundary composition in the Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTio3 system and its performance

ABSTRACT Using composition designing, Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) ceramics with compositions around the morphotropic phase boundary (MPB) were prepared by the solid-state reaction method via the columbite and wolframite precursor techniques. X-ray diffraction (XRD) measurement and XRD peaks fitting combined with electrical performance characterization confirm the occurrence of composition-induced ferroelectric phase change, and the sintered PIN-PMN-PT ceramics present the coexistence of rhombohedral and tetragonal ferroelectric phases. Composition exerts great influence on the relative density of the sintered ceramics, and the 0.28Pb(In1/2Nb1/2)O3-0.40Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (0.28PIN-0.40PMN-0.32PT) ceramics exhibit rather uniform microstructural morphology with high relative density of 94.4%. Dielectric, ferroelectric, and piezoelectric performance characterization also confirm the existence of the MPB effects, where the composition having performance maximum presents slight difference, proving that MPB has the composition region. Dielectric response behavior fitting and Raman spectroscopy measurement confirm the PIN-PMN-PT ceramics approach normal ferroelectrics with apparent diffusive transition characteristic and the occurrence of composition-induced ferroelectric phase change.

Frequency Dependence of Coercive Fields of [001]- and [011]-Poled Rhombohedral Pb(In1/2Nb1/2)O₃-Pb(Mg1/3Nb2/3)O₃-PbTiO₃ Single Crystals.

Relaxor-PbTiO3 (PT-based) ferroelectric single crystals are important for many piezoelectric applications because of their outstanding performances. In order to expand their usage and avoid the failure during application, frequency dependence of coercive fields EC for [001]- and [011]-poled rhombohedral Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals was investigated from the frequency of 1 Hz to 300 kHz by using hysteresis loop measurement (frequency: from 1 Hz to 2 kHz) and a critical value method (frequency: from 5 to 300 kHz). The results showed that the coercive field EC , remnant polarization Pr , and saturation polarization Ps strongly depended on the crystal orientation and frequency. Compared with the [001]-poled crystals, the [011]-poled PIN-PMN-PT single crystals possessed higher EC , Pr , and Ps at the same testing frequencies. With increasing frequency from 1 Hz to 300 kHz, the coercive fields EC of the [001]- and [011]-poled PIN-PMN-PT single crystals increased from 4.0 and 4.8 kV/cm to 11.5 and 14.9 kV/cm, respectively. Moreover, the frequency dependence of the coercive fields was found to be consistent with the growth kinetics model, where the coercive fields EC were proportional to fβ . This work benefits to the design of piezoelectric devices based on PIN-PMN-PT single crystals operated at high frequencies and high driving fields.

Composition uniformity of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals grown in 〈0 0 1〉 direction

As a typical representative of the second generation of relaxor-PbTiO3 (PT) ferroelectric single crystals, Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals exhibit an improved thermal stability of piezoelectric properties compared with PMN-PT single crystals. The high quality and large-size PIN-PMN-PT single crystals are required for transducers. Composition segregation inevitably exists in relaxor-PT ferroelectric crystals grown by the vertical Bridgman method, resulting in poor uniformity of piezoelectric properties. The single crystal boule grown in 〈001〉 direction have the best composition uniformity. In this work, the composition uniformity of PIN-PMN-PT single crystals grown in 〈001〉 direction was investigated. The PT content varies from 31 mol% to 35 mol% from the bottom to the top of crystal boule. The TR/M−T decreases gradually from 113 °C to 73 °C and TC increases from 155 °C to 184 °C respectively. Optimizing the poling condition, the dielectric and piezoelectric properties of 80% of the single crystal boule can keep consistent.The free dielectric constant ε33T/ε0 and piezoelectric coefficient d33 are 4500–5000 and 1700–1900 pC/N, respectively, showing the improvement of theutilization of crystal boule.

Dynamic scaling hysteresis behavior and field-induced domain transition of 0.16PIN-0.62PMN-0.22 PT single crystals

Due to the good dielectric, piezoelectric and ferroelectric properties, the pseudo-ternary ferroelectric single crystals Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) have been widely concerned and studied. In this study we found that the dynamic hysteresis loop area <A> with electric field E0 and frequency f0 of the 0.16 Pb(In1/2Nb1/2)O3-0.62 Pb(Mg1/3Nb2/3)O3-0.22PbTiO3 (0.16PIN-0.62PMN-0.22 PT) single crystals satisfies the relational equation <A> ∝ E0βf0α. In the <A> ∝ E0β relationship, both linear stages are found correlated with the low electric field in the first stage E0<Ec and the high electric field in the third stage E0 > 3Ec. The hysteresis loop area <A> with frequency f0 relationship satisfies the equation <A> ∝ f0α with roughly linear trend and the hysteresis loop area <A> decreases with increasing frequency f0. Such electric field dependent dynamic hysteresis scaling can be observed by polarized light microscopy.

In Situ Electric-Field Study of Surface Effects in Domain Engineered Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Relaxor Crystals by Grazing Incidence Diffraction

In this work, we present a grazing incidence X-ray diffraction study of the surface of a 0.24Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) [011] poled rhombohedral single crystal. The near surface microstructure (the top several tens to hundreds of unit cells) was measured in situ under an applied electric field. The strains calculated from the change in lattice parameters have been compared to the macroscopic strain measured with a strain gauge affixed to the sample surface. The depth dependence of the electrostrain at the crystal surface was investigated as a function of temperature. The analysis revealed hidden sweet spots featuring unusually high strains that were observed as a function of depth, temperature and orientation of the lattice planes.

High output power density of a shear-mode piezoelectric energy harvester based on Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

Wireless sensing is widely adopted in internet of things (IoT) systems, but battery replacement is a critical issue for these devices. Triboelectricity, solar, heat, and vibration can be potential energy sources. Piezoelectric energy harvesters that can obtain energy from ambient vibrations are thought to be a promising approach to this problem. However, state-of-the-art energy harvesters made from cantilever-structured piezoelectric ceramics exhibit low output power densities. In this paper, we propose a bridge-type shear-mode piezoelectric energy harvester based on Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals. Owing to the large figure-of-merit d15×g15 (1.296 ×10−10C V m N−2) of the crystal and the higher electromechanical transfer efficiency of the flex-tensional structure when compared to a ceramic cantilever structure, the newly designed shear-mode energy harvester exhibits a power density of up to 1.378×104 W m−3. This is much higher than the power densities provided by conventional cantilever energy harvesters based on piezoelectric ceramics (~102 W m−3). The output voltage and maximum output current are 21.6 Vpp and 6×10−4 App, respectively under an inertial force of 0.25 N. This output current and power density are 5.5 times and 3.0 times, respectively, higher than those of the same structured energy harvester made from soft piezoelectric ceramics. A sample wireless sensing and data transmission system is successfully powered by the newly designed energy harvester. This work may help to address the issue of sustainable energy supplies for IoT systems.

Densification and properties of oxygen sintered CuO-doped PIN-PMN-PT ceramics

Relationships between sintering temperature and annealing atmosphere on microstructure and dielectric, ferroelectric, and piezoelectric properties of reactively sintered CuO-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) ceramics were investigated. Uniform 2−3 μm grain size, dense CuO-doped PIN-PMN-PT ceramics are obtained when oxygen sintered versus a bimodal grain size microstructure when sintered in air. Oxygen sintered ceramics have excellent properties including d33 = 300–315 pC/N, EC = 7.7–8 kV/cm, and tan δ < 1.5%. The MPB region was mapped for ternary compositions doped with 0.5 mol% CuO and sintered in O2. MPB 25PIN-40PMN-35PT demonstrated the maximum piezoelectric properties with d33 = 565 +/− 23 pC/N and kp = 0.64 +/− 0.01. Sintering from 1050 °C to 1200 °C increased the coercive field from 8.5 to 11.5 kV/cm and reduced dielectric losses from tan δ = 1.8% to 0.8% by facilitating diffusion of CuO into the lattice and creating domain wall pinning defect dipoles as evidenced by an increase in the internal field bias of P-E loops.

PMN-PT and PIN-PMN-PT single crystals grown by continuous-feeding Bridgman method

Abstract Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals are superior piezoelectric materials. The single crystal boules grown by the Bridgman method include large property variation due to compositional segregation. We have developed the continuous-feeding Bridgman method to eliminate the compositional segregation. A long size PMN-PT single crystal boule (80 mm in diameter and 320 mm in length) was successfully grown under optimized growth conditions. The boule showed high property uniformity (10% in d33 variation) as a result of high composition uniformity. This results in productivity enhancement of 24% compared to our conventional 220 mm long boules. Two PIN-PMN-PT single crystal boules each with different target composition were also successfully grown. They showed stable properties and also higher coercive field (Ec = 510–550 V/mm) than PMN-PT. One of the crystals exhibited a very high phase transition temperature (Trt = 134 °C). The PIN-PMN-PT single crystals produced during this study will be beneficial for high power or high temperature applications.

Temperature Dependence of Elastic, Piezoelectric, and Dielectric Matrixes of [001]-Poled Rhombohedral PIN-PMN-PT Single Crystals.

To date, the complete sets of electromechanical-related coefficients of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals have been reported only at room temperature (RT). To meet the demands of practical applications, the full sets of elastic, piezoelectric, and dielectric constants of [001]-poled rhombohedral PIN-PMN-PT single crystals were measured as a function of temperature ranging from -10 °C to 70 °C by the resonance method. Variation trends of the material constants with temperature are discussed, and the corresponding mechanisms are analyzed. With increasing temperature, absolute values of the elastic compliance constants, the piezoelectric coefficients dij , and the dielectric permittivities εij increase, but the piezoelectric voltage coefficients gij and the characteristic frequencies decrease. The electromechanical coupling factors kij are not sensitive to temperature, of which k33 keeps 91% in the temperature range of -10 °C to 70 °C. Compared with other coefficients, the piezoelectric coefficients d31 , d33 , and d15 , and the dielectric permittivities ε11T , ε33T , ε11S , and ε33S , show the largest enhancements with increasing temperature. For example, the piezoelectric coefficients d31 and d33 , and the dielectric permittivities ε11T and ε33T change from -560 pC/N, 1130 pC/N, 1050, and 3300 at -10 °C to -890 pC/N, 1700 pC/N, 2030, and 6140 at 70 °C, increasing by more than 50% from -10 °C to 70 °C.

Domain switching and polarization fatigue in rhombohedral PIN‐PMN‐PT and Mn‐doped PIN‐PMN‐PT single crystals

AbstractDomain switching process under alternating electric field was investigated by in situ polarized light microscopy in [001]‐oriented Pb(In1/2Nb1/2)O3‐Pb(Mg1/3Nb2/3)O3‐PbTiO3 (PIN‐PMN‐PT) and Mn‐doped PIN‐PMN‐PT single crystals. Only one‐step 71° switching was confirmed in pure and Mn‐doped PIN‐PMN‐PT crystals by the formed domain walls, whose projections on the (001) plane are along 45° or 135° with respect to [010] direction. Moreover, polarization and strain loops during cyclic electric field were studied in depth as a function of switching cycles. Polarization fatigue appeared obviously above 1000 bipolar cycles in PIN‐PMN‐PT samples, while Mn‐doped PIN‐PMN‐PT samples exhibited almost fatigue‐free characteristics. By considering the thermodynamic theory, the improved fatigue resistance in Mn‐doped PIN‐PMN‐PT crystals stems from the enhanced energy barrier of domain switching. Mn modification does not affect the domain switching paths, but it can enhance the energy barrier of domain switching, leading to the improved fatigue behaviors. Our results provide a useful insight into the underlying mechanisms between the domain switching process and polarization fatigue for applying high‐performance relaxor‐ferroelectric single crystals.

High rhombohedral to tetragonal phase transition temperature and electromechanical response in Pb(Yb1/2Nb1/2)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 ferroelectric system near the morphotropic phase boundary

Relaxor-PT crystals, that is, Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT), have been used in mechanical to electric energy translation devices, such as for high-frequency imaging and underwater detection. However, low temperature usage remains a problem for high temperature applications, which are restricted by rhombohedral to tetragonal phase temperatures (TR-T). In this work, we synthesized a new xPb(Yb1/2Nb1/2)O3-yPb(Sc1/2Nb1/2)O3-0.37PbTiO3 (x = 0.2˜0.45) (xPYN-yPSN-0.37 P T) ternary piezoelectric polycrystalline with high TR-T = 225˜245 °C. For 0.45PYN-0.18PSN-0.37 P T ceramics, the piezoelectric coefficient d33, mechanical coupling factors k33, kp, and kt, and dielectric coefficients εr and TR-T are on the order of 330 pm/V, 68.3%, 54.3%, 49.3%, 930, and 245 °C, respectively. Thermal piezoelectric and ferroelectric behaviors were investigated in 0.45PYN-0.18PSN-0.37 P T polycrystalline, which are good candidates for high temperature piezoelectric application. DSC curves for xPYN-yPSN-0.37 P T systems present two peaks at 1213 and 1291 °C during the cooling process, showing good crystallization behavior and suitability for single crystal growth.