Patterned Sapphire Substrate Research Articles

Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications

Individually transferrable GaN-based MQWs micro-LED structures grown on two-dimensional (2D) hexagonal boron nitride (h-BN) have been demonstrated. Different sizes (60 × 30 µm, 60 × 60 µm, 90 × 60 µm and 90 × 90 µm) of GaN-based LED heterostructures on layered h-BN were grown on dielectric SiN patterned sapphire substrates using Metal Organic Vapor Phase Epitaxy (MOVPE). Scanning electron microscope (SEM) images show micro-LEDs were grown with high selectivity within the mask opening areas. Consistent MQWs emission from micro-LEDs was observed at 452 ± 2 nm by cathodoluminescence (CL) spectroscopy for all micro-LED sizes. The structural and optical quality were similar to the GaN-based-LEDs grown on unpatterned substrates. In addition, we have successfully demonstrated the lift-off and transfer of individual micro-LEDs to arbitrary flexible templates using a transfer printing machine, which can be addressed by full front-end process. These studies highlight the role of combination of van der Waals (vdW) epitaxy and selective area growth (SAG) in facilitating the direct realization of dimensionally defined III-Nitride micro-LED structures and the mechanical release and transfer of these micro-LEDs to templates suitable for flexible display and optogenetics applications.

Spatial Distribution Control of Room‐Temperature Single Photon Emitters in the Telecom Range from GaN Thin Films Grown on Patterned Sapphire Substrates

Spatial Distribution Control of Room‐Temperature Single Photon Emitters in the Telecom Range from GaN Thin Films Grown on Patterned Sapphire Substrates

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of (0001)-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {101¯1}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼109 cm−2) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼108 cm−2). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate

Ga2O3, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga2O3 was used as the substrate for epitaxial growth of Ga2O3. Here, the epitaxial layers of Ga2O3 were deposited by MOCVD on patterned sapphire substrates. The structure of epitaxial Ga2O3 layers on patterned substrates has been identified by X-ray diffractometry. To investigate the influence of the patterned substrates on the formation of epitaxial layers, thin Ga2O3 layers were grown on a flat sapphire substrate under the same conditions. Both types of samples were β-phase. However, no improvement in the layers’ crystalline quality was discovered when utilizing patterned sapphire substrates. In addition, the performance of the obtained two types of Ga2O3 photodetectors was compared. The photoelectric properties, such as responsivity, response speed, and detection capability, were different in the case of flat samples.

High performance composite phosphor-in-glass film for laser-driven warm white light on patterned sapphire substrate

Phosphor-in-glass film (PiF) based on sapphire substrate (SS) is a promising laser-driven color converter. Herein, by using an optimized silicon borate glass component, high-performance Y3Al5O12:Ce3+ PiFs are successfully prepared on both flat sapphire substrate (FSS) and patterned sapphire substrate (PSS) surfaces. Compared with planar structure of FSS, PSS has a periodic arrangement of conical structures on its surface, which effectively increases the contact area between the PiF and the substrate by approximately 56%, thereby forming a more robust film composite structure. The blue laser light is affected by the structure of PSS and produces a typical diffraction effect, which realizes the dispersion of the convergent beam. This significantly expands the laser spot on PSS-PiF and improves the uniformity of light. The saturation power density of PiF-PSS (6.29 W/mm2) is found to be 91% higher than that of PiF-FSS, while maintaining a high luminous efficiency (220 lm/W) and a low correlated color temperature (4500 K). Finally, the thermal quenching mechanism of PiF with different substrate surface morphologies is compared and analyzed. The present results provide important support for designing the interface structure between SSs and PiF to achieve higher efficiency and higher saturation threshold for warm white light.

Continuous-wave quasi-single-mode random lasing in CH3NH3PbBr3 perovskite films on patterned sapphire substrates.

We report intriguing continuous-wave quasi-single-mode random lasing in methylammonium lead bromide (CH3NH3PbBr3) perovskite films synthesized on a patterned sapphire substrate (PSS) under excitation of a 532-nm laser diode. The random laser emission evolves from a typical multi-mode to a quasi-single-mode with increasing pump fluences. The full width at half-maximum of the lasing peak is as narrow as 0.06 nm at ∼547.8 nm, corresponding to a high Q-factor of ∼9000. Such excellent random lasing performance is plausibly ascribed to the exciton resonance in optical absorption at 532 nm and the enhanced optical resonance due to the increased likelihood for randomly scattered light to re-enter the optical loops formed among the perovskite grains by multi-reflection at the perovskite/PSS interfaces. This work demonstrates the promise of single-mode perovskite random lasers by introducing the exciton resonance effect and ingeniously designed periodic nano/micro optical structure.

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Growth of gallium nitride (GaN) inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets. In this work, GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates (PSS) by metal organic vapor phase epitaxy (MOVPE). The influences of growth conditions on the surface morphology are experimentally studied and explained by Wulff constructions. The competition of growth rate among {0001}, { }, and { } facets results in the various surface morphologies of GaN. A higher growth temperature of 985 °C and a lower Ⅴ/Ⅲ ratio of 25 can expand the area of { } facets in GaN inverted pyramids. On the other hand, GaN inverted pyramids with almost pure { } facets are obtained by using a lower growth temperature of 930 °C, a higher Ⅴ/Ⅲ ratio of 100, and PSS with pattern arrangement perpendicular to the substrate primary flat.

Optical and Electrical Properties of AlxGa1-xN/GaN Epilayers Modulated by Aluminum Content.

AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the factors that influence the optical and electrical properties of the device. In this work, AlxGa1-xN (x = 0.24, 0.34, 0.47) epilayers grown on c-plane patterned sapphire substrate with GaN template by the metal organic chemical vapor deposition (MOCVD). It is demonstrated that the increase of the aluminum content leads to the deterioration of the surface morphology and crystal quality of the AlGaN epitaxial layer. The dislocation densities of AlxGa1-xN epilayers were determined from symmetric and asymmetric planes of the ω-scan rocking curve and the minimum value is 1.01 × 109 cm-2. The (101¯5) plane reciprocal space mapping was employed to measure the in-plane strain of the AlxGa1-xN layers grown on GaN. The surface barrier heights of the AlxGa1-xN samples derived from XPS are 1.57, 1.65, and 1.75 eV, respectively. The results of the bandgap obtained by PL spectroscopy are in good accordance with those of XRD. The Hall mobility and sheet electron concentration of the samples are successfully determined by preparing simple indium sphere electrodes.

Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates

Semi-polar orientation owns the advantage of reduced internal piezoelectric fields by tilting the growth direction away from the conventional c-direction. The crystal symmetry and the balanced biaxial stress in growth plane are inevitably broken in the semi-polar orientation, leading to the appearance of anisotropic properties in both structural and optical performance. This report has investigated the structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells overgrown on patterned sapphire substrates with a wide wavelength range from 415 nm to 521 nm. Polarization switching was not observed on these semi-polar (20–21) samples. The polarization ratio monotonically increases from 0.18 to 0.43 with increasing the emission wavelength, and the energy difference simultaneously increases from 17 meV to 29 meV. As increasing the excitation laser power, the polarization ratio drops slightly while the energy difference remains stable, indicating a saturation of the recombination to the topmost valence subband. These results help exploit the anisotropic structural and optical properties of semi-polar nitrides and promote the development of highly polarized light source for the application in the fields of display and communication.

Ion implantation induced nucleation and epitaxial growth of high-quality AlN

AlN materials have a wide range of applications in the fields of optoelectronic, power electronic, and radio frequency. However, the significant lattice mismatch and thermal mismatch between heteroepitaxial AlN and its substrate lead to a high threading dislocation (TD) density, thereby degrading the performance of device. In this work, we introduce a novel, cost-effective, and stable approach to epitaxially growing AlN. We inject different doses of nitrogen ions into nano patterned sapphire substrates, and then deposit the AlN layers by using metal-organic chemical vapor deposition. Ultraviolet light-emitting diode (UV-LED) with a luminescence wavelength of 395 nm is fabricated on it, and the optoelectronic properties are evaluated. Compared with the sample prepared by the traditional method, the sample injected with N ions at a dose of 1×10<sup>13</sup> cm<sup>–2</sup> exhibits an 82% reduction in screw TD density, the lowest surface roughness, and a 52% increase in photoluminescence intensity. It can be seen that appropriate dose of N ion implantation can promote the lateral growth and merging process in AlN heteroepitaxy. This is due to the fact that the process of implantation of N ions can suppress the tilt and twist of the nucleation islands, effectively reducing the density of TDs in AlN. Furthermore, in comparison with the controlled LED, the LED prepared on the high quality AlN template increases 63.8% and 61.7% in light output power and wall plug efficiency, respectively. The observed enhancement in device performance is attributed to the TD density of the epitaxial layer decreasing, which effectively reduces the nonradiative recombination centers. In summary, this study indicates that the ion implantation can significantly improve the quality of epitaxial AlN, thereby facilitating the development of high-performance AlN-based UV-LEDs.

Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates

The effect of grain coalescence on the dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates with low-temperature grown GaN and physical vapour deposition AlN nucleation layers is comparably investigated.

Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate

Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm2. LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

GaN micro- and nanostructures selectively grown on profiled sapphire substrates using PA-MBE without lithography

Purpose: Development of technology for the formation of ordered arrays of nanocolumns (NCs) of GaN microcrystals using plasma-activated molecular beam epitaxy from nitrogen (PA-MBE) on profiled sapphire substrates (SPS) of large diameter with a micro-cone profile. The proposed method eliminates the use of low-performance and expensive nanolithography methods. The article is aimed at a deeper understanding of the processes that determine the growth kinetics of III-N nanocolumns using PA MBE on patterned sapphire substrates with multiple orientations of various non-polar and polar planes. A new technological process for the fabrication of GaN NCs using PA-MPE is proposed, which ensures selectivity of their growth at the tops of PPS micro-cones and suppresses growth on the semipolar planes of these substrates. GaN NCs and microcrystals were grown using PA-MBE on commercially available PPS. A technology has been developed for the formation of discharged arrays of GaN nanocolumns without the use of lithographic procedures. Modes have been established that allow the formation of microcrystals and NCs with different diameters: from 30 nm to several microns. A diagram of the growth of GaN by the PA MBE method on PPS has been constructed, demonstrating the boundaries of the technological regimes for the formation of GaN NCs and microcrystals with different surface topography

Research on the Performance Improvement of GaN-Based Ultraviolet Light-Emitting Diode Chips with Magnetron-Sputtered AlN Nucleation Layers

In this paper, the influence of magnetron-sputtered AlN nucleation layers with different thicknesses on ultraviolet (UV) light-emitting diode (LED) chips is studied. First, magnetron-sputtered AlN layers with thicknesses of 8, 25, and 42 nm were prepared on a patterned sapphire substrate (PSS). Subsequently, a 2.8 μm-thick GaN layer was epitaxially grown. We found that when the magnetron-sputtered AlN was 25 nm thick, GaN had the best crystal quality and morphology. Therefore, we grew an 800 nm GaN layer on PSS to analyze the initial growth mechanism of the material. The scanning electron microscopy (SEM) images showed that when the thickness of the sputtered AlN layer was 25 nm, the GaN grains on the sidewall of the PSS cone were the least abundant. In addition, according to the selected area electron diffraction (SAED) test, the (011) crystal plane of GaN appeared on the sidewall of the PSS cone. The (011) crystal plane is the semipolar plane of GaN, which is not conducive to the growth of polar GaN materials. Finally, on this basis, we fabricated UV-LED chips. Among them, the UV-LED chips with the 25 nm magnetron-sputtered AlN layer exhibited the best electrical and optical performance. Overall, this work provides a pathway to improve the performance of UV-LED chips.

Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs.

Here, we propose nanoimprinted patterned sapphire with a silica array (PSSA) with the aim to promote the efficiency of InGaN-based green (∼520 nm) mini-LEDs. According to x-ray diffraction measurements, the threading dislocation density of GaN epitaxial layers grown on nanoimprinted PSSA demonstrates a pronounced reduction compared with the epilayers on the conventional patterned sapphire substrate (PSS). Consequently, a mini-LED on PSSA exhibits a significantly boosted light output power (LOP) in comparison to a mini-LED on PSS. At 10 mA, the LOP of the mini-LED on PSS is 6.0 mW, and this is further improved to 6.8 mW for the mini-LED on PSSA. Moreover, the peak external quantum efficiencies of the mini-LEDs on PSS and PSSA are 41% and 47%, respectively. A three-dimensional (3D) finite-difference time-domain simulation demonstrates that the PSSA contributes enhanced light extraction for photons emitted from the active region. It is also highly feasible to use this nanoimprinted PSSA technology in red and blue mini-LEDs for the realization of full-color displays.

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities.

Low-threshold lasing under pulsed optical pumping is demonstrated in GaN-based microrod cavities at room temperature, which are fabricated on the patterned sapphire substrates (PSS). Because the distribution of threading dislocations (TDs) is different at different locations, a confocal micro-photoluminescence spectroscopy (μ-PL) was performed to analyze the lasing properties of the different diameter microrods at the top of the triangle islands and between the triangle islands of the PSS substrates, respectively. The μ-PL results show that the 2 μm-diameter microrod cavity has a minimum threshold of about 0.3 kW/cm2. Whispering gallery modes (WGMs) in the microrod cavities are investigated by finite-difference time-domain simulation. Combined with the dislocation distribution in the GaN on the PSS substrates, it is found that the distribution of the strongest lasing WGMs always moves to the region with fewer TDs. This work reveals the connection between the lasing modes and the dislocation distribution, and can contribute to the development of low-threshold and high-efficiency GaN-based micro-lasers.

Comparative Analysis of Optoelectrical Performance in Laser Lift-Off Process for GaN-Based Green Micro-LED Arrays.

This work explores the pivotal role of laser lift-off (LLO) as a vital production process in facilitating the integration of Micro-LEDs into display modules. We specifically investigate the LLO process applied to high-performance gallium nitride (GaN)-based green Micro-LED arrays, featuring a pixel size of 20 × 38 μm on a patterned sapphire substrate (PSS). Scanning electron microscopy (SEM) observations demonstrate the preservation of the GaN film and sapphire substrate, with no discernible damage. We conduct a comprehensive analysis of the optoelectrical properties of the Micro-LEDs both before and after the LLO process, revealing significant enhancements in light output power (LOP) and external quantum efficiency (EQE). These improvements are attributed to more effective light extraction from the remaining patterns on the GaN backside surface. Furthermore, we examine the electroluminescence spectra of the Micro-LEDs under varying current conditions, revealing a slight change in peak wavelength and an approximate 10% decrease in the full width at half maximum (FWHM), indicating improved color purity. The current-voltage (I-V) curves obtained demonstrate the unchanged forward voltage at 2.17 V after the LLO process. Our findings emphasize the efficacy of LLO in optimizing the performance and color quality of Micro-LEDs, showcasing their potential for seamless integration into advanced display technologies.

Fabrication of Silver Nanobowl Arrays on Patterned Sapphire Substrate for Surface-Enhanced Raman Scattering.

The current article discusses surface-enhanced Raman spectroscopy (SERS) as a powerful technique for detecting molecules or ions by analyzing their molecular vibration signals for fingerprint peak recognition. We utilized a patterned sapphire substrate (PSS) featuring periodic micron cone arrays. Subsequently, we prepared a three-dimensional (3D) PSS-loaded regular Ag nanobowls (AgNBs) array using self-assembly and surface galvanic displacement reactions based on polystyrene (PS) nanospheres. The SERS performance and structure of the nanobowl arrays were optimized by manipulating the reaction time. We discovered that the PSS substrates featuring periodic patterns exhibited superior light-trapping effects compared to the planar substrates. The SERS performance of the prepared AgNBs-PSS substrates was tested under the optimized experimental parameters with 4-mercaptobenzoic acid (4-MBA) as the probe molecule, and the enhancement factor (EF) was calculated to be 8.96 × 104. Finite-difference time-domain (FDTD) simulations were conducted to explain that the AgNBs arrays' hot spots were distributed at the bowl wall locations. Overall, the current research offers a potential route for developing high-performance, low-cost 3D SERS substrates.

Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes

Herein, the characteristics of AlN epilayers grown directly on hole‐type patterned sapphire substrate (HPSS) by hydride vapor‐phase epitaxy (HVPE) are reported. To investigate the effect of HPSS, the threading dislocation densities (TDDs) of AlN films grown simultaneously on HPSS and flat sapphire substrate (FSS) are analyzed by transmission electron microscopy. The corresponding TDD is measured to be 4.38 × 108 cm−2 for the AlN sample grown on HPSS, which is significantly lower than the value of 1.48 × 109 cm−2 on the FSS. The usability of the AlN/HPSS template for deep ultraviolet (DUV) light‐emitting diodes (LEDs) is proven by growth of AlGaN‐based LED structure emitting at 278 nm with single peak emission in a metal‐organic chemical vapor deposition reactor. The light output power of flip‐chip LED grown and fabricated on AlN/HPSS template is enhanced by a factor of 1.25 when compared with LED on AlN/FSS template at 350 mA injecting current. These results suggest that the high‐quality AlN template grown on properly designed HPSS by HVPE can make a significant contribution toward the realization of highly efficient nitride‐based DUV‐LEDs.