Abstract
Herein, the characteristics of AlN epilayers grown directly on hole‐type patterned sapphire substrate (HPSS) by hydride vapor‐phase epitaxy (HVPE) are reported. To investigate the effect of HPSS, the threading dislocation densities (TDDs) of AlN films grown simultaneously on HPSS and flat sapphire substrate (FSS) are analyzed by transmission electron microscopy. The corresponding TDD is measured to be 4.38 × 108 cm−2 for the AlN sample grown on HPSS, which is significantly lower than the value of 1.48 × 109 cm−2 on the FSS. The usability of the AlN/HPSS template for deep ultraviolet (DUV) light‐emitting diodes (LEDs) is proven by growth of AlGaN‐based LED structure emitting at 278 nm with single peak emission in a metal‐organic chemical vapor deposition reactor. The light output power of flip‐chip LED grown and fabricated on AlN/HPSS template is enhanced by a factor of 1.25 when compared with LED on AlN/FSS template at 350 mA injecting current. These results suggest that the high‐quality AlN template grown on properly designed HPSS by HVPE can make a significant contribution toward the realization of highly efficient nitride‐based DUV‐LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.