Passivated Emitter Rear Cell Research Articles

Novel optimized models to enhance performance forecasting of grid-connected PERC PV string operating under semi-arid climate conditions

This study focuses on modeling and forecasting the performance of a grid-connected photovoltaic (PV) string, aiming to enhance the accuracy of output power prediction, which is crucial for the effective management and stability of the electrical grid. While previous research has extensively examined PV modules, there is a notable lack of studies specifically targeting PV string behaviors, especially in harsh climates prevailing in semi-arid regions. This study addresses this gap by investigating the modeling and performance prediction of a Passivated Emitter Rear Cell (PERC) PV string under semi-arid climate conditions using analytical and predictive approaches based on both implicit and explicit models as Single Diode Model (SDM), Das Model (DM), Boutana et al. Model (BM) and Power Law Model (PLM). New mathematical models of DM and BM shape parameters versus temperature and irradiance along with novel analytical formulas giving DM shape parameters as a function of PV metrics have been introduced. The proposed approaches are validated using real measurements of a PERC PV string incorporating 12 JKM405M-72H PV modules operating at Green Energy Park (GEP) research facility in Morocco. The reliability of these approaches is assessed by comparing I-V curves, P-V curves and peak power generated and predicted by SDM, DM, BM and PLM to actual measurements. The comparison reveals that generated and predicted outcomes align well with measured data, with an average value of Normalized Root Mean Square Error (NRMSE) not exceeding 4.16 % for all models throughout the day. The findings indicate that the proposed approaches effectively predict the performance of the PERC PV string, accounting for climatic influences and providing insights into optimizing PV system performance, thereby contributing to improved grid stability in semi-arid regions.

Defect passivation engineering for achieving 4.29% light utilization efficiency MA-free wide-bandgap semi-transparent perovskite solar cells

Wide-bandgap perovskite materials are a great candidate for semitransparent perovskite solar cells (ST-PSCs) due to their tunable bandgap, outstanding transparency, and excellent photovoltaic performance. Though Br-rich perovskite can widen the bandgap, Br influences the crystallization dynamic speed leaving small perovskite grain sizes and high defects. Surface passivation engineering has been one of the best choices to suppress defects caused by the rapid crystallization of Br-rich perovskites. Herein, we applied MA-free perovskite as a light absorber because of the erratic thermal aging of MA-containing perovskites and selected phenethylammonium iodide (PEAI) and 4-trifluoro phenylethylammonium iodide (CF3PEAI) as passivation materials for improving the performance of opaque PSCs and ST-PSCs. Consequently, CF3PEA possesses a larger dipole moment. It has been demonstrated to exhibit a stronger binding energy with the substrate than PEA by density functional theory (DFT) calculations. This enhanced molecular interaction underpins the performance improvements in our solar cells, which manifests as an inverted planar structure opaque PSCs with 1.78 eV bandgap achieve a power conversion efficiency (PCE) of 17.09 % with excellent stability. A PCE of 17.17 % with 25 % average visible-light transmittance (AVT) and 4.29 % light utilization efficiency (LUE) of ST-PSCs is achieved by further optimizing the fabrication process of the buffer layer for protecting the perovskites from the damage of ITO sputter. Meanwhile, a four-terminal tandem solar cell with ST-PSC and silicon-based passivated emitter rear cell (PERC) obtains a PCE of 26.28 %. This work provides a feasible way to fabricate high-performance ST-PSCs with limited materials and preparation conditions.

Annual degradation rates and soiling losses of photovoltaic systems composed of recent crystalline silicon technologies in temperate climate

AbstractThe purpose of this study is to investigate the annual degradation rates of photovoltaic (PV) systems composed of PV modules based on recent crystalline silicon (c‐Si) PV technologies. We investigated the annual degradation rates of four PV systems composed of different c‐Si PV technologies, comprising p‐type multi‐crystalline silicon with a passivated emitter rear cell, n‐type silicon heterojunction, p‐type single‐crystalline silicon (sc‐Si) with an aluminum back surface field, and n‐type (sc‐Si) solar cell technologies. These systems were located in Gunma Prefecture in Japan and were measured over 6 years. Furthermore, the effects of soiling on the annual degradation rates of these PV systems were examined by partially surface cleaning the PV arrays two times. The results obtained indicate that the apparent annual degradation rates of the PV strings before surface cleaning were 0.8, 1.6, 1.4, and 1.2%/year, respectively, because of optical losses due to dust particles. However, the inherent annual degradation rates of the PV strings after surface cleaning were 0.1, 0.6, 0.0, and 0.3%/year, respectively. These low degradation rates indicate that the PV systems composed of the recent c‐Si PV technologies all offered reasonably stable performance that was reduced by 3.6%, 5.5%, 7.3%, and 4.8%, respectively because of the effects of surface soiling, although the surfaces of the PV arrays had been washed by plentiful rainfall under their humid subtropical climatic operating conditions.

Laser‐Assisted Nanotexturing for Flexible Ultrathin Crystalline Si Solar Cells

Ultrathin (UT) crystalline Si wafers, which are more flexible than conventional ones, can apply to curved surfaces, enabling a wide range of applications such as building‐integrated photovoltaics, vehicle‐integrated photovoltaics, and wearable devices. Thinner wafers require more effective light trapping; thus, surface texturing in microscale is a common approach to compensate for the reduced thickness by enhancing the light pathlength. Microscale textures, however, deteriorate the mechanical flexibility due to stress concentration in the valley of the microtextures. In this study, a laser‐assisted nanotexturing process is proposed for enhanced flexibility of the UT Si solar cells with a 50 μm thickness while maintaining light‐trapping performances. A nanolens array is used to focus laser onto the Si wafers, inducing the formation of nanoparticle etch masks for nanopyramid texturing in an alkaline solution. The origin of the enhanced flexibility of the nanotextured Si wafers is discussed by a micromechanics simulation study. Herein, nanotexturing technique is applied to UT Si‐based passivated emitter rear cells and the enhanced flexibility of the cells with a 26 mm critical bending radius is demonstrated. Also, it is shown that the nanotextured Si wafer provides a higher efficiency of 18.68%, whereas the microtextured one exhibits 18.10%.

Investigation on Absorption and Photocurrent in Silicon Absorber with Varied Pyramid Texture Angles by Ray Tracer

In this work, ray tracing is used to investigate the effects of pyramid texture angle towards light absorption and photocurrent in 250 μm-thick crystalline silicon (c-Si) absorber. Upright pyramids with texture angles of 10-50o are investigated. Planar c-Si absorber is used as a reference. When the pyramid angle increases, the broadband reflection reduces due to enhanced light scattering which leads to improved light absorption. At angle of 50o, the weighted average reflection (WAR) reduces to 14.7% and broadband light absorption increases. The optical path length enhancement increases to 12 at wavelength of 1100 nm. The reflection and photogenerated current density (Jg) exhibit an inverse relationship with increasing zenith angle. With increasing zenith angle, the reflection from the c-Si absorber increases and this results in lower light absorption and Jg. In the passivated emitter rear cell (PERC) solar cell, the planar solar cell exhibits short-circuit current density (Jsc) of 26 mA/cm2 with conversion efficiency of 13.6%. When both the pyramids and the silicon nitride (SiNx) anti-reflective coating (ARC) are incorporated on the solar cell, the Jsc increases to 39 mA/cm2 and conversion efficiency increases to 20.5%. This is attributed to the enhanced light-trapping and light-coupling effects in the device.

Corrosion effects in bifacial crystalline silicon PV modules; interactions between metallization and encapsulation

This study addresses the influence of different encapsulation materials on performance losses in bifacial PV modules after extended damp heat testing. The widely used ethylene vinyl acetate (EVA) is compared to polyolefin elastomers (POE) and thermoplastic polyolefins (TPO). We show that modules based on n-type bifacial solar cells (tunnel oxide passivated contact, TOPCON) are more prone to degradation than p-type (Passivated emitter rear cell, PERC) based laminates. More specifically, the front side metallization of these n-type cells corrodes under extended damp heat testing, yielding a decreased fill factor in the I–V characteristics and the appearance of dark spots and dark areas in electroluminescence imaging. The newer generation of encapsulant materials (POE and TPO), slowly replacing EVA in the modules commercialized today, demonstrate an improved protection of the metallization. Apart from the nature of the encapsulant, the cell type and the presence or absence of glass cover plates are also shown to influence the metal grid corrosion. To better understand the mechanisms at play, post-mortem analysis was carried out on small sized degraded PV laminates, by drilling out circular samples (“coring”) that could be analyzed in depth. The analyses revealed a weakened bond between the metallization and the silicon emitter, ultimately causing metal grid delamination. The proposed mechanism behind this delamination starts with the degradation of lead glass, which is part of the cell metallization grid and contains lead oxide (PbO). This compound is susceptible to dissolution in acidic environment.

Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers

Perovskite/silicon tandem solar cells have been intensively studied in recent years, and their efficiencies have rapidly increased owing to the numerous efforts in this field. A question about which type of silicon solar cell is the most suitable subcell in tandem devices emerges. Herein, three attractive silicon solar cells are summarized, including passivated-emitter rear-cell (PERC), tunnel oxide passivated contact (TOPCon), and heterojunction (HJT) cells. Their structures and features are elucidated for a clear understanding of the mechanism and potential of optimum performance. Moreover, the characteristics and performance of perovskite/silicon tandem cells with PERC, TOPCon, and HJT subcells are contrasted and discussed. The significant contribution of the passivation layer and structure design on both sides to photovoltaic properties of tandem devices is emphasized. Especially, the recombination layer between two subcells is analyzed in depth in terms of material chemistry, light absorption, and charge transport with a review on preparing the optimized structure.

Comparative study of commercial crystalline solar cells

In this research article, a comparative study of different types, i.e., conventional (Multicrystalline & Monocrystalline) and Passivated Emitter Rear Cell (PERC) of commercially available crystalline silicon solar cells have been carried out in terms of their spectral response (SR), quantum efficiency (QE) and current–voltage (I-V) characteristics. The SR, Internal Quantum Efficiency (IQE), and External Quantum Efficiency (EQE) measurements have been utilized for analyzing the internal parameters such as diffusion length (L) and dead layer (dl) thickness values in all types of solar cells using Medium Wavelength Spectral Response (MWSR) and Short Wavelength Spectral Response (SWSR) methods respectively. The effect of surface passivation on the diffusion length has also been studied for mono, multi, and PERC crystalline solar cells. The results indicate that the PERC solar cells have a higher L and lower dl value and the probable reason for the high performance of this technology. The different types of solar cells are also converted into modules, and the I-V characterization is done with the Sun simulator and indicates the high performance of PERC modules. The paper also highlights one of the probable reasons for the recent PV market shift towards PERC technology.

Detailed Study on the Role of Nature and Distribution of Pinholes and Oxide Layer on the Performance of Tunnel Oxide Passivated Contact (TOPCon) Solar Cell

Industrial silicon solar cells are now mostly based on aluminum back surface field (Al-BSF) or passivated emitter rear cell (PERC) technologies on p-type crystalline silicon wafers. Recently tunnel oxide passivated contact (TOPCon) solar cell on p-type Si wafers has attracted attention due to its demonstrated higher efficiency than either Al-BSF or PERC type solar cell. Numerical analysis using 3-D Sentaurus Technology Computer Aided Design (3-D-TCAD) software leads to the enhancement of the efficiency of the p- and n-type TOPCon solar cells by optimizing the size, nature, and number density of pinholes in the oxide layer; thickness of the oxide layer with and without pinholes and B doping concentration in the hole selective p+ poly-Si layer at the rear. Effects of both types of pinholes, either completely through (physical contact) or partially through (localized thinner oxide), are studied on cell performance. Simulation results show that pinholes in tunnel oxide have an advantage in lowering of series resistance and improvement of fill factor. To achieve optimum performance, the size, nature, and number density of pinholes and thickness of the oxide layer should be optimized. Considering both types of pinholes, the efficiency achieved is 25.3% for p-TOPCon and 26% for n-TOPCon. Also, the outputs of simulated p-TOPCon are compared with simulated p-PERC solar cell. The analysis shows that TOPCon solar cell on p-type wafer has significant ability to be adopted for industrial production.

Ray Tracing of Thin PERC Silicon Solar Cells with Cone Textures

Thinning of crystalline silicon (c-Si) wafer is a promising approach to reduce the technology cost of passivated emitter rear cell (PERC) solar cell. However, reducing the wafer thickness compromises light absorption, hence short-circuit current density (Jsc) in the solar cell. This necessitates effective light trapping in the device. In this work, upright cone textures are incorporated on the surface of 50 μm PERC monocrystalline silicon solar cell. SunSolve ray tracer is used to simulate the optical and electrical properties of the solar cell within 300-1200 nm wavelength region. Besides, the solar cell is also simulated with a front silicon nitride (SiNx) anti-reflective coating (ARC) on the cone textures. From the results, the thin PERC solar cell with cone textures and SiNx ARC demonstrates Jsc of up to 38.8 mA/cm2 and conversion efficiency of 20.4%. This is a significant performance improvement when compared to the planar cell, with Jsc of 25.1 mA/cm2 and efficiency of 13.1%. The improvement is attributed to the enhanced broadband light absorption and increased external quantum efficiency in the device.

22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Among all available photovoltaic (PV) technology options, c-Si based passivated emitter rear cell (PERC) has already proved its mettle by delivering more than 22% conversion efficiency at the industrial level. However, designing of PERC solar cell device remains a challenge owing to recombination and absorption losses, which eventually restrict the performance of the device toward achieving an Auger efficiency limit of 29.4%. The primary contributor to these losses is emitter recombination losses that limits the performance of PERC devices. The n+-emitter region in the proposed PERC devices is formed using ion implantation followed by a diffusion process. The impact of process variables such as dose (cm−2), energy (keV), diffusion time (s), and diffusion temperature (oC) on the PERC device performance is not much explored. Therefore, in an attempt to fulfill this research gap, the emitter region performance in terms of ion implantation of phosphorus, influence of local back surface field (BSF) doping concentration (1017 to 1019 cm−3), and back surface recombination velocity (SRV 101–107 cm/s) on PERC device performance followed by the loss analysis is examined in this work. An upright pyramid textured structure with constant height (5 μm) and industrial standard stacked dielectric anti-reflective coating layers, SiNX/SiO2 and Al2O3/SiNX at front and back side respectively is realized using different process statements such as deposit, etch, implantation, and diffusion with the help of a Silvaco TCAD software. Investigations reveal that the PERC device can deliver an efficiency of 22.8% with 150 μm boron-doped crystalline silicon (c-Si) wafer at an optimum phosphorous dose (5 × 1015 cm−2), BSF doping (1019 cm−3), and SRVn (107 cm/s). Short-circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 0.686 V, and fill factor (FF) of 81.54% are obtained for the structure under consideration. A roadmap to achieve 23.5% conversion efficiency has also been reported by assuming a carrier selective contact at the backside with a surface recombination velocity of 10 cm/s.

Admittance spectra of silicon photocells in dark mode

An extended model of silicon photovoltaic cells with localized parameters is presented, including inductance in a series branch. Based on the recorded admittance-frequency spectra, the dependences of the active and reactive components from the bias voltage for PERC (Passivated Emitter Rear Cell), HIT (Heterojunction with Intrinsic Thin-layer solar cells) and IBC (Interdigitated Back Contact cells) elements are reconstructed. The structure of the Nyquist diagrams for the components of admittance spectra is analyzed, which make it possible to visually determine the working scheme of the chain based on the elementary links of the first and second orders.

Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers

Full area transparent contacts are the next step in order to enhance the efficiency of silicon based passivated emitter rear cells. Here we present a full area contact based on Al2O3 and reduced TiOx. The thin Al2O3 acts as passivating tunneling layer, whereas the TiOx is used for charge carrier transport. This work provides a way to enhance the conductivity of TiOx by forming gas annealing (FGA) and doping with tantalum. Furthermore, it addresses the native SiOx without chemical treatment. A thin titanium interlayer (Ti-IL) serves this purpose. Current-voltage measurements reveal a contact resistance of 30 Ωcm2 for 50 nm of pure TiOx. Ta-doping combined with a 6 nm thick Ti-IL reduces the contact resistance by two orders of magnitude down to 0.36 Ωcm2. The passivation by an Al2O3/TiOx layer stack leads to an excellent surface recombination velocity (SRV) of 5.6 cm/s with only 3 nm Al2O3 but results in a large contact resistance of about 100 Ωcm2. This contact resistance can be reduced by three orders of magnitude down to 0.25 Ωcm2 including a 10 nm Ti-IL while still providing a sufficient SRV of about 60 cm/s. The absorption coefficient of 6.3×105 cm−1 inhibits the usage as front contact for solar cells. However, it could be used as a backside contact, since the transmission is less important on the backside of a monofacial solar cell.

An Analysis of Fill Factor Loss Depending on the Temperature for the Industrial Silicon Solar Cells

Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at a standard test condition, the thermal stability of the solar cell parameters determines the temperature dependence of the PV module. Fill factor loss analysis of crystalline silicon solar cell is one of the most efficient methods to diagnose the dominant problem, accurately. In this study, the fill factor analysis method and the double-diode model of a solar cell was applied to analyze the effect of J01, J02, Rs, and Rsh on the fill factor in details. The temperature dependence of the parameters was compared through the passivated emitter rear cell (PERC) of the industrial scale solar cells. As a result of analysis, PERC cells showed different temperature dependence for the fill factor loss of the J01 and J02 as temperatures rose. In addition, we confirmed that fill factor loss from the J01 and J02 at elevated temperature depends on the initial state of the solar cells. The verification of the fill factor loss analysis was conducted by comparing to the fitting results of the injection dependent-carrier lifetime.

Impact of HfO₂ as a Passivation Layer in the Solar Cell Efficiency Enhancement in Passivated Emitter Rear Cell Type.

We report the simulation of high-efficiency c-silicon Passivated Emitter Rear Contact (PERC) type solar cell structure with rear side passivated with HfO₂ as a passivating material. Variation in the half length of pyramid has been carried out to investigate its effect on the solar cell electrical characteristics such as fill factor (FF), open circuit voltage (Voc) and efficiency. Aluminum back Surface Field (Al-BSF) and PERC type solar cell with Al₂O₃ passivation layer structures were also modeled for comparison. Effect of variation in passivation layer (HfO₂) thickness (10 and 15 nm) and permittivity (k = 14 and 25) on the solar cell electrical characteristics has been investigated. Result shows the efficiency improvement in the PERC solar cell with HfO₂ passivation layer by 0.5941% and 0.983% as compared to the Al-BSF and PERC with Al₂O₃ passivation layer at 8 μm pyramid half length. Increased series resistance and reduced FF has been observed with the incorporation of passivation layer at the solar cell structure. Negligible effect of passivation layer thickness has been observed on the solar cell electrical parameters whereas the permittivity value does have significant effect.

Efficiency Roadmap for Evolutionary Upgrades of PERC Solar Cells by TOPCon: Impact of Parasitic Absorption

Passivating contacts created via a thin interfacial oxide and a highly doped polysilicon layer, e.g., the TOPCon technology, are on the verge of being implemented in solar cell mass production. Investment decisions rely on R&D to identify the most promising implementation option, meaning a trustworthy roadmap based on predicted performance gains. This article shows how to thoroughly quantify the performance potential via numerical simulation, focusing on an evolutionary upgrade of a busbarless p-type bifacial passivated emitter rear cell (PERC) technology. We specifically highlight the need to consider not only the electrical gains of passivating contacts, but also the associated optical losses due to parasitic absorption in the polysilicon layers for front and rear illumination. The influence of free-carrier absorption in polysilicon on the solar cell optics is characterized on experimental test structures in order to verify our optical simulation model. Introducing TOPCon fully at the rear and also locally aligned to the front fingers can boost the PERC efficiency by approximately 1%abs. The final device is strongly limited by losses in the p-type c-Si bulk and phosphorus-doped front emitter. Consequently, the presented evolutionary TOPCon upgrades may well be of increased relevance for future improved p-PERC cells, as an alternative to the current focus on n-type TOPCon cells with boron emitter.

Tellurium‐based screen‐printable conductor metallizations for crystalline silicon solar cells

AbstractTellurium‐based screen‐printable conductor metallization pastes containing multiple inorganic solid‐state frits (ie, metallization pastes containing two or more individual discrete tellurium‐based frits) were evaluated on p‐type, mono‐crystalline silicon passivated emitter rear cell (PERC) wafers. Individual discrete frits with tellurium‐lead‐metal‐oxygen compositions of were prepared with varying ratios of tellurium and lead cations. Screen‐printed solar cells fabricated from metallization pastes containing multiple discrete frits (two, three, and four discrete frits) had state‐of‐the‐art solar cell electrical properties (Eff = 21.1%). Mechanisms for the oxidation, dissolution, and removal of the SiNx:H antireflective coating (ARC) by tellurium‐based metallizations during solar cell firing are examined. In situ thermal analysis of a model frit‐silicon nitride system shows that frit glass transition temperatures coincide with the onset of silicon nitride oxidation during heating in accord with dissolution reactions. The advantage of multiple frit systems is an inherent ability to fine‐tune the final chemistry of the conductor metallization, beyond what is possible with single frit systems, to further improve solar cell performance, which is essential for advanced crystalline silicon solar cell devices and continued reductions in processing costs.

Optimization of ALD $$\hbox {Al}_{2}\hbox {O}_{3}$$ process parameters for passivation of c-silicon and its implementation on industrial monocrystalline silicon solar cell

Effect of process parameters on \(\hbox {Al}_{2}\hbox {O}_{3}\) deposited using Atomic Layer Deposition (ALD) for the surface passivation of c-silicon surface has been investigated. Surface passivation properties of \(\hbox {Al}_{2}\hbox {O}_{3}\) have been measured by evaluating the minority carrier lifetime and interface charges at the \(\hbox {Si}/\hbox {Al}_{2}\hbox {O}_{3}\) interface. It has been observed that surface passivation properties of \(\hbox {Al}_{2}\hbox {O}_{3}\) are strongly dependent on process parameters such as substrate temperature, annealing temperature, and thickness of the deposited \(\hbox {Al}_{2}\hbox {O}_{3}\) film. Minority carrier lifetime, effective charge density (\(Q_{{\mathrm{eff}}}\)), and interface defect density (\(D _{{\mathrm{it}}}\)) were observed to vary from 180 to \(355\,\upmu \hbox {s}\), \(-\,2.3 \times 10^{12}\) to \(-1.46 \times 10^{13}\,\hbox {cm}^{-2}\) and \(1.2 \times 10^{9}\) to \(1.9\times 10^{10}\,\hbox {eV}^{-1}\,\hbox {cm}^{-2}\), respectively, for various process parameters. \(\hbox {Al}_{2}\hbox {O}_{3}\) film based on the optimized process parameters were then used as a passivation layer in fabricating industrial PERC solar cells. Effect of \(\hbox {Al}_{2}\hbox {O}_{3}\) passivation in PERC solar cells has been demonstrated by comparing the characteristics of the PERC solar cells with that of the standard Al BSF solar cells. An efficiency improvement of \(\sim 0.8\%\) has been observed in passivated emitter rear cells (PERC) solar cells as compared to the standard aluminum back surface field (Al BSF) solar cells.

Comparison of light-induced degradation and regeneration in P-type monocrystalline full aluminum back surface field and passivated emitter rear cells

This paper reports on a systematic and quantitative assessment of light induced degradation (LID) and regeneration in full Al-BSF and passivated emitter rear contact cells (PERC) along with the fundamental understanding of the difference between the two. After LID, PERC cells showed a much greater loss in cell efficiency than full Al-BSF cells (∼0.9% vs ∼0.6%) because the degradation in bulk lifetime also erodes the benefit of superior BSRV in PERC cells. Three main regeneration conditions involving the combination of heat and light (75 °C/1 Sun/48 h, 130 °C/2 Suns/1.5 h and 200 °C/3 Suns/30 s) were implemented to eliminate LID loss due to BO defects. Low temperature/long time (75 °C/48 h) and high temperature/short time (200 °C/30s) regeneration process was unable to reach 100% stabilization. The intermediate temperature/time (130 °C/1.5 h) generation achieved nearly full recovery and stabilization (over 99%) for both full Al-BSF and PERC cells. We discussed the effect of temperature, time and suns in regeneration mechanism for two cells.

Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing

Industrial Czochralski silicon (Cz-Si) photovoltaic (PV) efficiencies have routinely reached >20% with the passivated emitter rear cell (PERC) design. Nanostructuring silicon (black-Si) by dry-etching decreases surface reflectance, allows diamond saw wafering, enhances metal gettering, and may prevent power conversion efficiency degradation under light exposure. Black-Si allows a potential for >20% PERC cells using cheaper multicrystalline silicon (mc-Si) materials, although dry-etching is widely considered too expensive for industrial application. This study analyzes this economic potential by comparing costs of standard texturized Cz-Si and black mc-Si PERC cells. Manufacturing sequences are divided into steps, and costs per unit power are individually calculated for all different steps. Baseline costs for each step are calculated and a sensitivity analysis run for a theoretical 1 GW/year manufacturing plant, combining data from literature and industry. The results show an increase in the overall cell processing costs between 15.8% and 25.1% due to the combination of black-Si etching and passivation by double-sided atomic layer deposition. Despite this increase, the cost per unit power of the overall PERC cell drops by 10.8%. This is a significant cost saving and thus energy policies are reviewed to overcome challenges to accelerating deployment of black mc-Si PERC across the PV industry.