An Analysis of Fill Factor Loss Depending on the Temperature for the Industrial Silicon Solar Cells

Kwan Hong Min,Hee-Eun Song,Donghwan Kim,Hae-Seok Lee,Yoonmook Kang,Sang Hee Lee,Taejun Kim,Sungeun Park,Min Gu Kang

doi:10.3390/en13112931

Kwan Hong Min, Hee-Eun Song + Show 7 more

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https://doi.org/10.3390/en13112931

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Abstract

Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at a standard test condition, the thermal stability of the solar cell parameters determines the temperature dependence of the PV module. Fill factor loss analysis of crystalline silicon solar cell is one of the most efficient methods to diagnose the dominant problem, accurately. In this study, the fill factor analysis method and the double-diode model of a solar cell was applied to analyze the effect of J01, J02, Rs, and Rsh on the fill factor in details. The temperature dependence of the parameters was compared through the passivated emitter rear cell (PERC) of the industrial scale solar cells. As a result of analysis, PERC cells showed different temperature dependence for the fill factor loss of the J01 and J02 as temperatures rose. In addition, we confirmed that fill factor loss from the J01 and J02 at elevated temperature depends on the initial state of the solar cells. The verification of the fill factor loss analysis was conducted by comparing to the fitting results of the injection dependent-carrier lifetime.

Highlights

The fill factor (FF), open circuit voltage (Voc ) and short circuit current (Jsc ) of a solar cell are important parameters because they determine the maximum power that a solar cell can generate
Percentage of factor loss from J01 (FFJ01) was higher than FFJ02 for the passivated emitter rear cell (PERC) B cell
FFJ02 had a higher percentage of total fill factor loss than FFJ01 for the PERC A cell

Summary

Introduction

The fill factor (FF), open circuit voltage (Voc ) and short circuit current (Jsc ) of a solar cell are important parameters because they determine the maximum power that a solar cell can generate. It is well known that the fill factor of silicon solar cells is influenced by the recombination current and parasitic resistance. In order to clarify the effect of these factors on a fill factor, the double-diode model is generally used as a theoretical concept. In the double-diode model, the photo-generated current density reduces due to the saturation current densities (J01 , J02 ), and parasitic resistance (Rs , Rsh ) as the equation shows below. " J = Jph − J01 ( ) # q(V + JRs ) (V + JRs ) − 1 − J02 exp −1 −.

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Discussion

Conclusion