A lateral magnetotransistor (LMT) with asymmetric topology sensitive to the three directions of the magnetic field and using only a pair of terminals is reported. The experimental results are justified in terms of the Lorentz deflection of carriers. Modelling the device as an LMT and a diode, sensitive to the magnetic field, in parallel with the E–B junction, allows the response of the device to be interpreted through the variation of areas associated with each component. The analysis of the results suggests some design criteria in order to obtain a magnetic-field-vector sensor.
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