Oxygen Implantation Research Articles

Constructing surface protective film of V-Se-O to promote zinc ion storage by surface oxygen implantation strategy

Interfacial chemical modification is an effective strategy to adjust the strong Coulombic ion-lattice interactions with high valence cations experienced by electrode materials, facilitating the reaction kinetic. In this paper, a simple and fast surface oxygen implantation strategy was designed to adjust the electronic structure of stainless steel (SS) supported vanadium diselenide (VSe2) nanosheets and form a surface protective film, which effectively accelerates the reaction kinetics of Zn2+ and extends the cycle life of the battery. It is demonstrated that the conductivity, pseudocapacitance and specific capacity can be tuned by selectively introducing oxygen species to the surface, which provides an important reference for the design of electrodes with controlled surface chemistry. Density functional theory (DFT) calculations also confirm that the electronic structure can be adjusted by surface oxygen injection strategy, which not only improves the conductivity, but also adjusts the adsorption energy, thus providing favorable conditions for zinc ion storage. Benefiting from the selenium vacancies and pores generated by the removal of part of selenium, and the oxide film formed on the surfaces, the VSe2-xOx-SS-30 electrode showed higher specific capacity (188.4 mAh/g at 0.5 A g−1 after 50 cycles), better rate performance (107.1 mAh/g at 4 A g−1) and more satisfactory cycling stability (83.1 mAh/g at 5 A g−1 after 1800 cycles) than VSe2-SS electrode. Importantly, the flexible quasi-solid-state VSe2-xOx-SS-30//Zn battery also exhibits high specific capacity and excellent environmental adaptability. Furthermore, the zinc (de)intercalation and transformation reactions mechanism was revealed by some ex-situ/in-situ techniques.

Changes in the Composition and Corrosion-Electrochemical Properties of the Chromium-Nickel Steel 03Cr18Ni11 During Implantation of Argon, Oxygen, and Nitrogen Ions

Changes in the Composition and Corrosion-Electrochemical Properties of the Chromium-Nickel Steel 03Cr18Ni11 During Implantation of Argon, Oxygen, and Nitrogen Ions

Effect of oxygen-ion implantation on the local electronic structures of strontium-titanate single crystals: An investigation using synchrotron-based x-ray diffraction and x-ray photoemission techniques

Effect of oxygen-ion implantation on the local electronic structures of strontium-titanate single crystals: An investigation using synchrotron-based x-ray diffraction and x-ray photoemission techniques

Improving hydrogen isotope permeation resistance of (TiVAlCrZr)O multi-component metal oxide coating by O+ Ion implantation

Oxygen vacancy can greatly affect the performance of metal oxide to hydrogen isotope permeation resistance. In this work, we report a new strategy to improve the permeation resistance by oxygen ion implantation. A (TiVAlCrZr)O multi-component metal oxide film was prepared as a tritium permeation barrier on a 316 L substrate by RF magnetron sputtering deposition, and then implanted by oxygen ions to fill the oxygen vacancies inside. The grazing incidence X-rays (GIXRD) analysis showed that the pristine and the oxygen-implanted coatings were in an amorphous phase. The deuterium permeation resistance of the four coatings was tested by a gas-driven device. The result showed that the pristine coating had a permeation reduction factor (PRF) of 5,610 at 500 °C, while there was a 13.6 times of increase in PRF with an oxygen concentration of 11.4 at.% with the best-reported value of 76,500, and more oxygen ions implanted, the better the deuterium permeation resistance of the coating. The GIXRD showed that after the test the pristine coating remained amorphous, while some crystals were formed in the oxygen-implanted coating with an oxygen concentration of 11.4 at.%. Oxygen ion implantation enhanced the deuterium permeation resistance by filling the oxygen vacancies and forming of more stable state of amorphous multi-component metal oxide, which is expected to be a new type of deuterium permeation barrier.

Investigation of Corrosion Properties and Composition of the Surface Formed on AISI 321 Stainless Steel by Ion Implantation

In this work, the corrosion resistance of AISI 321 stainless steel is increased through. the two-stage implantation of oxygen ions and of both aluminum and boron ions together. During ion implantation, a modified layer with a thickness of about 200 nm is formed, which affects the properties of material. The increase in corrosion resistance is confirmed by prolonged acid corrosion tests at pH 3.5 and by accelerated electrochemical tests using a potentiostat. The corrosion rate of the implanted sample is 0.708 μA/cm2, in contrast to the non-implanted sample (1.26 μA/cm2). The modified surface layer is examined using X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). Aluminum and boron are implanted to a depth of more than 250 nm. It is found that the modified surface of the stainless steel substrate contains oxides of implanted ions (Al2O3) and oxides of substrate ions (Cr2O3 and NiCr2O4).

Visible and near-infrared ridge waveguides in fused silica glasses by oxygen ion implantation and femtosecond laser ablation

A two-dimensional waveguide is the building block in integrated photonic circuits. In this work, the 5.0 MeV oxygen ion implantation at a dose of [Formula: see text] ions/cm2 was carried out on the fused silica glass for the formation of the planar waveguide. Then, a femtosecond laser was employed to ablate the ion-implanted surface at a speed of 200 [Formula: see text]m/s for the construction of the ridge waveguide. The energy depositions of the oxygen ion implantation into the fused silica glass were simulated by the SRIM 2013. The microscopic morphology of the ridge waveguide was photographed by a Nikon microscope. The near-field intensity distributions of the ridge waveguide at 532 nm and 976 nm were measured by using the end-face coupling system. The ion-implanted and femtosecond-ablated ridge waveguide on the fused silica glass has the potential as a photonic device for integrated optical systems at the visible and near-infrared bands.

Изменение состава и коррозионно-электрохимических свойств хромоникелевой стали 03Х18Н11 при имплантации ионов аргона, кислорода и азота

The effect of implantation of argon, oxygen and nitrogen ions on the physicochemical structure of the surface and the corrosion-electrochemical behavior of chromium-nickel steel 03Cr18Ni11has been studied. Methods of electrochemical polarization (EP), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used. Ion implantation of argon, oxygen and nitrogen leads to an increase in the corrosion resistance of steel 03Cr18Ni11 both in a neutral environment and in the presence of a corrosion activator (chloride anions), while irradiation with argon ions is most effective. It was found that after implantation of argon ions, a partial etching of the steel surface occurs, i.e. an increase in the true surface. This, in turn, facilitates the onset of the passive state. At the same time, the use of oxygen and nitrogen ions leads to smoothing of the surface. AFM data indicate that the studied steel treated with argon ions exhibits the greatest resistance to local corrosion. The implantation of oxygen and argon ions reduces the overall corrosion to the greatest extent. It is important to note that deep craters and traces of pitting corrosion do not form on the surface of the steel. The XPS data show that after ion implantation, there was a change in the concentration of the elements that make up the steel in the near-surface layers of the material in the depth of the implanted layer compared with the non-irradiated sample. It is established that the surface layers of steel are enriched with chromium atoms during ion implantation. This process occurs most intensively when samples are treated with argon ions. In this case, mixed chromium and iron oxides are formed, contributing to the passivation of the steel surface. Also, the process of ion implantation is accompanied by oxidation of the surface of the steel under study. This is confirmed by an increase in the oxygen content in the surface layers. To the greatest extent, this process occurs during implantation of oxygen ions. After corrosion tests, an increased chromium content is also observed on the surface of steel treated with Ar+ ions, which confirms the formation in this case of strong chromium oxides that remain on the surface during the corrosion of steel. The analysis of the fine structure of the XPS spectra showed that under the action of argon ions, the oxygen of surface oxides is redistributed in favor of chromium atoms and the formation of strong mixed iron and chromium oxides of the spinel type, including Fe2+, Fe3+, Cr3+ and Cr6+ compounds. It is important to note that although chromium oxides are also formed during oxygen implantation and in the same quantities as during argon implantation, the protective properties of the resulting compounds are noticeably lower. Therefore, not only the chemical composition is important, but also the structure of the resulting layers. It can be assumed that the high kinetic energy of heavy argon ions affects both the formation of a developed surface relief and the formation of strong mixed iron and chromium oxides of the spinel type.

Температурная зависимость дислокационной электролюминесценции в кремниевых светодиодах с кислородными преципитатами

Electroluminescence has been studied in silicon light-emitting diodes containing oxygen precipitates at temperatures of 40-300 K. Oxygen ion implantation and multistage anneals are used for fabrication of the diodes. Over all temperature range, spectra are well approximated by one Lorentz and four Gaussian curves. Lines of dislocation-related luminescence D1-D4 (the D1 line is described by Lorentz curve) and oxygen precipitates (OPs) are present in the spectra. At temperature variation, peak positions of the D1, OP and D2 lines coincide with temperature dependence of the forbidden gap width reduced by values of 356, 330 and 303 meV respectively. Build and quenching areas are observed on temperature dependences of the electroluminescence intensities of the D1, OP and D2 lines, the activation energies of the processes are determined, and reasons of their appearance are discussed.

Niobium oxides films on GaN: Photoelectron spectroscopy study

Non-stoichiometric niobium oxides were grown on p-GaN(0001) substrates using physical vapor deposition of Nb under ultrahigh vacuum (UHV) enriched with oxygen. The film consisted mainly of NbOx and Nb2O5 phases. NbO2 compound as well as trace amounts of NbO and Nb in metallic were also present in the film. Then, in order to eliminate non-insulating fractions, the method of oxygen-ion implantation followed by annealing was used. This resulted in a formation of insulator films composed almost only of Nb2O5 compound. The surface of the cleaned substrate and niobium oxides/GaN interfaces (prior and after an O-ion implantation) were characterized in situ by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The result allowed to determine band offsets at the Nb2O5/GaN interface.

Plasma fireball-mediated ion implantation for nonvolatile memory application

Extraordinary performance of nonvolatile memories based on resistive switching is expected to fulfill the requirements of next-generation data-intensive technologies. However, due to the separate growth of functional layer and electrodes in the device, resistive random access memories still suffer from their implementation at a commercial scale. Herein, depending upon the polarity, a single device is used to grow Ti thin film followed by plasma fireball-mediated oxygen ion implantation to transform the top surface of Ti film into a functional TiOx layer to fabricate the device. The formation of TiOx layer at the near-surface region and oxygen-concentration gradient with depth in the implanted film is demonstrated. The current–voltage characteristics of the device analyzed at the nanoscale show forming-free bipolar resistive switching, which is further confirmed by the twofold erase-write process. At 5 × 1016 ions cm−2 fluence, resistive switching occurs at higher voltages, while at 5 × 1017 ions cm−2 fluence, it occurs at lower voltages. As an application, the rapid fabrication of periodic arrays of squared memory cells of different sizes is demonstrated. We propose a simple and cost-effective one-step technique to fabricate resistive switching-based nanoscale nonvolatile memory devices, which can be utilized for the production of high-density commercial devices at a large scale.

Effect of Implantation of Argon and Oxygen Ions on the Physicochemical Properties and Corrosion and Electrochemical Behavior of 14Cr17Ni2 Chromium–Nickel Steel

Effect of Implantation of Argon and Oxygen Ions on the Physicochemical Properties and Corrosion and Electrochemical Behavior of 14Cr17Ni2 Chromium–Nickel Steel

Optical properties investigation on Er3+ ion-doped tellurite glass by hydrogen and oxygen ion implantation

Optical properties of Er3+ ion-doped tellurite glass waveguides were investigated by hydrogen and oxygen ion implantation. The hydrogen ions or oxygen ions were implanted into the mechanically polished tellurite glass (60TeO2–30WO3–10La2O3–1Er2O3) samples respectively by 460 KeV and 3000 KeV with different fluences, which were also simulated using SRIM 2013 (stopping and range of ions in matter). At the near surface of ion-implanted sample, peak location of nuclear energy loss at 4.8 μm and 2.85 μm were achieved separately in two kinds of implanted conditions, and planar optical waveguides were formed in Er3+-doped tellurite glasses. Fluorescence properties were investigated by using a confocal microscope with a fiber-coupled system. This work has reference value in the field of integrated optics device based on Er3+-doped tellurite glass.

Surface defects, stress evolution, and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

Oxygen ions (O+) were implanted into fused silica at a fixed fluence of 1 × 1017 ions/cm2 with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E′ centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si–O–Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si–O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.

Oxygen Ion Implantation Improving Cell Adhesion on Titanium Surfaces through Increased Attraction of Fibronectin PHSRN Domain.

Mechanistic understanding of fibronectin (FN) adsorption which determines cell adhesion on cell-implant interfaces is significant for improving the osteoconduction and soft-tissue healing of implants. Here, it is shown that the adsorption behavior of FN on the titanium oxide surface (TiO2 ) is highly relative to its Pro-His-Ser-Arg-Asn (PHSRN) peptide. FN lacking PHSRN fails to bind to surfaces, resulting in inhibited cell adhesion and spreading. Molecular dynamics simulation shows higher affinity and greater adsorption energy of PHSRN peptide with TiO2 surface due to the stronger hydrogen bonds formed by the serine and arginine residues with O ion of the substrate. Finally, by increasing O content in TiO2 surfaces through O ion-beam implantation, improving the cell adhesion, cell differentiation, and the subsequent biomineralization on titanium implant is realized. This study reveals the vital role of PHSRN in FN-mediated cell adhesion on implant surfaces, providing a promising new target for further tissue integration and implant success.

Silicon solar cells with interfacial passivation of the highly phosphorus-doped emitter surface by oxygen ion implantation

We investigated oxygen passivation at the interfacial silicon surface on the highly phosphorus-doped region by oxygen ion implantation and showed resulting enhanced electrical properties of silicon solar cells. The oxygen ion implantation converts the dead layer formed due to crystallographic defects in the doping process into an oxygen-induced insulation layer by fragmentation with an optimal amount of energy. The surface dead layer of the highly doped Si emitter was broken by oxygen ions with a fixed-dose and different energies. The optimized implanted oxygen ion energy shows an improved short circuit current after implantation and improved efficiency with enhanced quantum efficiency in the blue region. On the other hand, high energy implanted oxygen ions formed surface defects, resulting in decreased cell efficiency.

Laser-treated wood for high-efficiency solar thermal steam generation.

Solar-driven water vaporization is considered one of the most sustainable ways to solve water scarcity. The design of highly efficient solar absorber systems has received extensive attention. Here, we report a novel light absorption material for water evaporation using laser-treated wood. The obtained laser-treated wood possesses interconnected 3D porous networks formed by the random construction of carbon arrays and a hydrophilic surface due to the oxygen implantation by laser treatment. When under 1 sun solar-simulated light irradiation (1 kW m−2), the surface temperatures of dry and water-saturated wood reach 59.5 °C and 40.4 °C, respectively, indicating good heat localization. As a result, the laser-treated wood under 1 sun illumination shows high solar to vapor efficiencies of 93.1% and 92.6% for pure water and seawater, respectively, which are higher than that of most wood-based reported photo-thermal conversion materials. Therefore, the fabricated laser-treated wood may pave the way for harvesting solar energy to produce clean water at low cost.

Electron Emission from the Electronic States of Oxygen Precipitates in Oxygen‐Implanted Silicon

Defect structure and electric properties of n‐type silicon samples subjected to multienergy oxygen implantation and subsequent multistage thermal treatments at different high temperatures and durations are investigated with the help of transmission electron microscopy (TEM), capacitance–voltage (C(V)), and deep level transient spectroscopy (DLTS) techniques. Well spatially separated layers in the depth consisting of three predominant types of defects—threading dislocations (TDs), oxygen precipitates (OPs) together with diverse extended structural defects and OPs only—are observed with TEM. While the properties of DLTS spectra from the layer with TDs coincide well with dislocation‐related ones reported in numerous previously published articles, the spectra from the OP layer are found to show unusual distinct property: the low‐temperature tail of DLTS peak does not or very weakly depend on the rate window. A simplified semiquantitative model is proposed based on a big positive charge of OP layer revealed from C(V) measurements. The model explains the unusual property to be due to an increase of the Coulomb‐like attractive potential upon electron emission from the electronic states of the OPs giving rise to logarithmic emission kinetics.

Oxygen and methyl co-modified carbon nitride for enhanced photocatalytic dagradation

Carbon nitride (C3N4) is a promising photocatalytic material to degrade various pollutants. However, the degradation activity is restricted by the limited light absorption and fast recombination of photoinduced carriers. Herein, a structure modification strategy by introducing a functional reagent during the polymerization process was adopted. The structure, composition and morphology of prepared materials were investigated by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. Benefiting from the implantation of oxygen and methyl groups in triazine unit of C3N4, enhanced light absorption and effective carrier separation are achieved. As a result, the modified C3N4 exhibits a significant enhanced degradation activity and the optimal rate constant of modified C3N4 for Acid Red 9 degradation is 5.83 times that of pristine C3N4. The work demonstrates the effect of structure modification in C3N4 for enhancing degradation activity.

Технологии создания радиационно-стойких СБИС

The technology of radiation-resistant CMOS VLSI is based on industrial IC technology. The design uses feedback circuits and guard rings to compensate for single effects of cosmic particles (SEE). In most critical cases, these influences in digital circuits lead to single faults (SEU), which temporarily disrupt the state of memory cells, to latching (SEL), and in the long term to a catastrophic change of state. Various space programs confirm great prospects for their use in future space structures. The article discusses the effects of using radiation-resistant CMOS technology, technology based on a silicon-on-sapphire structure, CMOS technology on an insulating substrate taking into account typical characteristics, SIMOX-SOI technology, which consists in separation by implantation of oxygen ions. In new designs of circuits, more advanced algorithms should be implemented for the future.

Ion irradiation and implantation modifications of magneto-ionically induced exchange bias in Gd/NiCoO

Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni0.33Co0.67O heterostructures. Irradiation using He+ leads to an expansion of the Ni0.33Co0.67O lattice due to strain relaxation. At low He+ fluence (≤2 × 1014 ions cm−2), the redox-induced interfacial magnetic moment initially increases, owing to enhanced oxygen migration. At higher fluence, the exchange bias is suppressed due to reduction of pinned uncompensated interfacial Ni0.33Co0.67O spins. For oxygen implanted samples, an initial lattice expansion below a dose of 5 × 1015 cm−2 is subsequently dominated at higher dose by a lattice contraction and phase segregation into NiO and CoO-rich phases, which in turn alters the exchange bias. These results highlight the possibility of ion irradiation and implantation as an effective means to tailor magneto-ionic effects.