Abstract
Oxygen vacancy can greatly affect the performance of metal oxide to hydrogen isotope permeation resistance. In this work, we report a new strategy to improve the permeation resistance by oxygen ion implantation. A (TiVAlCrZr)O multi-component metal oxide film was prepared as a tritium permeation barrier on a 316 L substrate by RF magnetron sputtering deposition, and then implanted by oxygen ions to fill the oxygen vacancies inside. The grazing incidence X-rays (GIXRD) analysis showed that the pristine and the oxygen-implanted coatings were in an amorphous phase. The deuterium permeation resistance of the four coatings was tested by a gas-driven device. The result showed that the pristine coating had a permeation reduction factor (PRF) of 5,610 at 500 °C, while there was a 13.6 times of increase in PRF with an oxygen concentration of 11.4 at.% with the best-reported value of 76,500, and more oxygen ions implanted, the better the deuterium permeation resistance of the coating. The GIXRD showed that after the test the pristine coating remained amorphous, while some crystals were formed in the oxygen-implanted coating with an oxygen concentration of 11.4 at.%. Oxygen ion implantation enhanced the deuterium permeation resistance by filling the oxygen vacancies and forming of more stable state of amorphous multi-component metal oxide, which is expected to be a new type of deuterium permeation barrier.
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