Oxide Defects Research Articles

Chemically Tunable Textured Interfacial Defects in PbZrO3-Based Antiferroelectric Perovskite Oxides

Chemically Tunable Textured Interfacial Defects in PbZrO₃-Based Antiferroelectric Perovskite Oxides

Performance and reliability in back-gated CVD-grown MoS2 devices

In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.

Atomistic structure and three-dimensional spatial distribution of oxide clusters along voids in nitride metal/semiconductor superlattices

Epitaxial metal/semiconductor superlattices with atomically sharp interfaces and tunable Schottky barrier heights have attracted significant interest in recent years for thermionic emission-based high-temperature thermoelectric devices, optical hyperbolic metamaterials, hot-electron photocatalysis, and optoelectronic heterostructures for visible-to-terahertz frequency range applications. ZrN/ScN is a demonstration of such epitaxial metal/semiconductor superlattices and exhibits atomically sharp lattice-matched interfaces, albeit with the presence of threading dislocations on MgO substrates. Along with its influence on structural integrity and atomic diffusion, the presence of such defects significantly impacts electron and phonon transport in these metamaterials with carrier trapping, scattering, shunt path, etc. Therefore, an in-depth analysis of the atomistic structure and the composition of such defects is extremely necessary to design devices with improved efficiencies. In this paper, high-resolution scanning transmission electron microscopy and atom-probe tomography are employed to determine the structure and three-dimensional (3D) spatial distribution of oxide defect clusters along the voids in ZrN/ScN superlattices. $\mathrm{Sc}{\mathrm{O}}^{+}$ and $\mathrm{Sc}{\mathrm{O}}^{++}$ ions are found to cluster predominantly along such 3D interface defects with zirconium and scandium atoms surrounding them. Defect regions are also found to be depleted of nitrogen atoms and rich with a high concentration of oxygen. The oxygen content was found to be higher inside the ScN layers compared to ZrN. First-principles modeling analysis verified the clustering of oxygen at high oxygen partial pressure and demonstrated a higher affinity of scandium towards oxygen than for zirconium towards oxygen. These results mark significant progress in understanding the atomic structure and composition of defects in nitride superlattices.

Experimental and numerical investigations of oxide-related defects in Al alloy gravity die castings

This research aimed to study the formation and distribution of oxide-related defects in the gravity die casting process of an AlSi7Cu0.5Mg alloy by using experimental and numerical investigations. Metallographic and image analysis techniques were conducted to map the distribution of oxide inclusions inside the casting at the microscopic level. Numerical simulations were used to analyse the filling and solidification stages, and to foresee the turbulence of the melt and the formation of the oxide defects. The results show that most of the defects were correlated with the oxide layers or bubbles entrained inside the liquid metal. The accuracy of the numerical code in simulating the metal fluid-dynamic behaviour and the heat transfer was verified, and the results were in agreement with the experimental findings. The numerical distribution of defects was consistent with the experimental results, proving that the model successfully predicted the formation of oxide-related defects.

Toward Automated Defect Extraction From Bias Temperature Instability Measurements

Defects in the gate oxide give rise to bias temperature instability (BTI), which is considered a serious threat to the device reliability of ultrascaled MOSFETs. Extrapolating the device degradation over the operational lifetime, therefore, requires detailed knowledge about the distributions of defects causing BTI. Typically, BTI degradation is modeled by calibrating a predefined defect parameter distribution, such as normally distributed defect bands, by employing measure-stress-measure (MSM) sequences at various temperatures. Here, we present the Effective Single Defect Decomposition (ESiD), a novel method for a semiautomated extraction of defect parameters from MSM experiments which does not require any prior assumptions about their distributions. This technique decomposes the MSM sequences into contributions from dominant effective single-defects and constructs a defect parameter distribution that reproduces the experimental data with high accuracy. We validate this new method by comparing its results to density functional theory (DFT) predictions and single-defect characterizations.

Multiple Acyl-CoA Dehydrogenase Deficiency with Variable Presentation Due to a Homozygous Mutation in a Bedouin Tribe.

Multiple acyl-CoA dehydrogenase deficiency (MADD) is a fatty acid and amino acid oxidation defect caused by a deficiency of the electron-transfer flavoprotein (ETF) or the electron-transfer flavoprotein dehydrogenase (ETFDH). There are three phenotypes of the disease, two neonatal forms and one late-onset. Previous studies have suggested that there is a phenotype–genotype correlation. We report on six patients from a single Bedouin tribe, five of whom were sequenced and found to be homozygous to the same variant in the ETFDH gene, with variable severity and age of presentation. The variant, NM_004453.3 (ETFDH): c.524G>A, p.(R175H), was previously recognized as pathogenic, although it has not been reported in the literature in a homozygous state before. R175H is located near the FAD binding site, likely affecting the affinity of FAD for EFT:QO. The single homozygous ETFDH pathogenic variant was found to be causing MADD in this cohort with an unexpectedly variable severity of presentation. The difference in severity could partly be explained by early diagnosis via newborn screening and early treatment with the FAD precursor riboflavin, highlighting the importance of early detection by newborn screening.

Highly flexible and thermal conductive films of graphene/poly(naphthylamine) and applications in thermal management of LED devices

AbstractIn 5G era, integration and miniaturization of electronic components lead to increasing challenges in thermal management. Materials with high thermal conductivity and flexibility are strongly desired for dissipating heat locally generated in such devices. Due to its extraordinary thermal conducting performance, graphene has been exhibiting great potential in thermal management. In this work, composite films based on graphene oxide and poly‐naphthylamine (gGO/PNA) with enhanced thermal conducting performance have been achieved by employing poly (naphthylamine) (PNA) as repairing additives to restore topological defects of graphene oxide (GO). Specifically, gGO/PNA films are prepared with a facile operation of vacuum filtration followed by an elevated temperature treatment. The optimal thermal conductivity (κ) of gGO/PNA reaches to 1016.03 W m−1 K−1, 31.3% enhancement over that of the pristine graphene one. The thermal conducting performance test demonstrates the film an efficient heat‐dissipation ability from a heat‐generating LED bulb. Furthermore, the film exhibits excellent flexibility, making it survival from a 1000‐cycle bending test. This finding may promote the development of heat‐spreading materials and their applications in thermal management of highly integrated electronics.

Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques

We experimentally studied the formation of vacancy clusters and oxygen related defects in uranium oxide (UOx) thin films (<70 nm) changing the stoichiometry in the x = 2.2–3.5 range. Films were deposited on Si(001) by DC magnetron sputtering varying the substrate temperature (room temperature, 400 °C and 600 °C) and different relative O2 partial pressures in the argon-oxygen mixture. The different species of vacancy-like defects are identified by the combination of depth dependent positron annihilation techniques and by comparison of the experimental data with ab-initio calculations. In samples growth up to 400 °C substrate temperature, di- and tri- vacancies were formed whereas at higher temperature, hexa-vacancies and larger vacancy clusters appear. Film growth at increasing oxygen partial pressure was found not to be correlated with an increase of oxygen defects, but with the formation of more complex vacancy clusters. The presence of oxygen related defects is revealed by identifying preferential positron annihilations with oxygen electrons. Moreover, uranium vacancies inside vacancy clusters are identified by localization of positrons, in agreement with ab-initio calculations.

Engineering Manganese Defects in Mn3O4 for Catalytic Oxidation of Carcinogenic Formaldehyde.

Formaldehyde (HCHO) is a priority pollutant in the indoor environment, which is irritative and carcinogenic to humans. The non-noble metal oxides have a wide application prospect in the decomposition of HCHO. Defects in metal oxides have been widely accepted as active sites in heterogeneous catalysis. Compared with the extensive study of oxygen defects, the effect of cation defects has not been clearly addressed. Herein, Mn defect-rich Mn3O4 was synthesized by pyrolysis of Ce-doped MnCO3. It is found for the first time that the content of Mn defects in Mn3O4 can be adjusted by introducing Ce. The introduction of Ce resulted in the higher contents of Mn defects, which significantly enhances the HCHO decomposition. Moreover, Mn defect can effectively narrow the half-metallic gap of Mn3O4, regulate the electronic structure and coordination environment of surrounding oxygen, and further improve the activity and mobility of neighboring oxygen atoms. Importantly, Mn defects are not only beneficial to the generation of neighboring oxygen vacancy but also conducive to enhancing the activation ability of oxygen vacancy for O2. The advantages resulting from Mn defects significantly enhance the HCHO decomposition. This research proposes a strategy to adjust cation defects and deepens the comprehension of the function of cation defects.

MTORC1 activation is not sufficient to suppress hepatic PPARα signaling or ketogenesis

The mechanistic target of rapamycin (mTOR) is often referred to as a master regulator of the cellular metabolism that can integrate the growth factor and nutrient signaling. Fasting suppresses hepatic mTORC1 activity via the activity of the tuberous sclerosis complex (TSC), a negative regulator of mTORC1, to suppress anabolic metabolism. The loss of TSC1 in the liver locks the liver in a constitutively anabolic state even during fasting, which was suggested to regulate peroxisome proliferator-activated receptor alpha (PPARα) signaling and ketogenesis, but the molecular determinants of this regulation are unknown. Here, we examined if the activation of the mTORC1 complex in mice by the liver-specific deletion of TSC1 (TSC1L−/−) is sufficient to suppress PPARα signaling and therefore ketogenesis in the fasted state. We found that the activation of mTORC1 in the fasted state is not sufficient to repress PPARα-responsive genes or ketogenesis. Furthermore, we examined whether the activation of the anabolic program mediated by mTORC1 complex activation in the fasted state could suppress the robust catabolic programming and enhanced PPARα transcriptional response of mice with a liver-specific defect in mitochondrial long-chain fatty acid oxidation using carnitine palmitoyltransferase 2 (Cpt2L−/−) mice. We generated Cpt2L−/−; Tsc1L−/− double-KO mice and showed that the activation of mTORC1 by deletion of TSC1 could not suppress the catabolic PPARα-mediated phenotype of Cpt2L−/− mice. These data demonstrate that the activation of mTORC1 by the deletion of TSC1 is not sufficient to suppress a PPARα transcriptional program or ketogenesis after fasting.

The development of thermal immunosensing for the detection of food-borne pathogens E. coli O157:H7 based on the novel substoichiometric photothermal conversion materials MoO3-x NPs

A novel substoichiometric photothermal conversion materials MoO3-x nanoparticles (4-MBA MoO3-x NPs) was first prepared by 4-mercaptobenzoic acid modified based on the oxygen vacancy defects of molybdenum oxide and used to develop a thermal immunosensor for the detection of pathogens E. coli O157:H7.4-mercaptobenzoic acid (4-MBA) being selected as the reducing agent functionalized surface modifier to prepare 4-MBA MoO3-x NPs, which was an excellent photothermal conversion materials and had 42.9 % photothermal conversion efficiency under 808 nm laser. Photothermal sensor probes prepared by 4-MBA-MoO3-x NPs being coupled with antibodies was used to develop the immunoassay for the detection of E. coli O157:H7 by means of immunomagnetic separation technology. The method could be used for semi-quantitative and quantitative determine of the E. coli O157:H7 by visual colorimetry and infrared thermal imaging. For the quantitative determination, the E. coli O157:H7 was quantified by recording the temperature response of the target bacteria combined with the nanomaterial under 808 nm laser with infrared camera. Under the optimal conditions, the low limit of detection (LOD) of the method was 14 CFU/mL with a linearity range of 1.4 × 101-1.4 × 106 CFU/mL, and the recoveries was 82.45 %−105.08 % in real samples analysis.

Ultrathin 2D-oxides: A perspective on fabrication, structure, defect, transport, electron, and phonon properties

In the field of atomically thin 2D materials, oxides are relatively unexplored in spite of the large number of layered oxide structures amenable to exfoliation. There is an increasing interest in ultrathin film oxide nanostructures from applied points of view. In this Perspective paper, recent progress in understanding the fundamental properties of 2D oxides is discussed. Two families of 2D oxides are considered: (1) van der Waals bonded layered materials in which the transition metal is in its highest valence state (represented by V2O5 and MoO3) and (2) layered materials with ionic bonding between positive alkali cation layers and negatively charged transition metal oxide layers (LiCoO2). The chemical exfoliation process and its combination with mechanical exfoliation are presented for the latter. Structural phase stability of the resulting nanoflakes, the role of cation size, and the importance of defects in oxides are discussed. Effects of two-dimensionality on phonons, electronic band structures, and electronic screening are placed in the context of what is known on other 2D materials, such as transition metal dichalcogenides. The electronic structure is discussed at the level of many-body-perturbation theory using the quasiparticle self-consistent GW method, the accuracy of which is critically evaluated including effects of electron–hole interactions on screening and electron–phonon coupling. The predicted occurrence of a two-dimensional electron gas on Li-covered surfaces of LiCoO2 and its relation to topological aspects of the band structure and bonding is presented as an example of the essential role of the surface in ultrathin materials. Finally, some case studies of the electronic transport and the use of these oxides in nanoscale field-effect transistors are presented.

Very-few-layer graphene obtained from facile two-step shear exfoliation in aqueous solution

A defect-free graphene with 1–3 layers (very-few-layer graphene, VFLG) has been successfully produced using a facile and environmentally friendly two-step shear exfoliation method in rotating-blade mixer (kitchen blender) and in high shear rotor–stator mixer. An aqueous solution containing an inexpensive and safe anionic surfactant of sodium lauryl sulphate (SLS) was deployed as the working fluid. Raman spectroscopy (RS) and Raman imaging (RI), density functional theory (DFT) simulation, transmission electron microscopy and high-resolution transmission electron microscopy (TEM-HRTEM), as well as Fourier-transform infrared spectroscopy (FTIR) analyses were used to characterize the samples. Some configurations of mixer setting were applied, and the exfoliation mechanisms were discussed. RS analysis revealed that the exfoliation process in rotating-blade mixer continued by high shear in rotor–stator mixer for 3 h had produced VFLG dominated by a single layer of graphene. The Lorentzian peak fitting of 2D band was well-fitted by a single Lorentzian component at Raman shift of 2651.317 cm−1. The produced VFLG endured the lowest peak intensity ratio of D and G bands (ID/IG) of 0.146 which corresponded with the highest lateral size. RI analysis showed that produced VFLG had edge chirality of armchairs and zigzag terminations. TEM-HRTEM confirmed the presence of VFLG with the highest mean lateral size of ~375.4 nm. DFT calculations provided pertinent optical/electronic properties of graphene in terms of Raman Spectra, density of states (DOS) curve and nuclear magnetic resonance (NMR) shielding tensor. FTIR analysis showed that the exfoliation process did not cause any oxidation, sulphonation, or functional defects on the VFLG. The turbulence and hydrodynamic force in liquid were the critical factors in the exfoliation processes. High-quality VFLG, with a facile, inexpensive, and environmentally friendly synthesis process, rendered this process to be a promising route for large-scale high-quality graphene production.

Synthesis and Characterization of Cobalt and Nitrogen Co-Doped Peat-Derived Carbon Catalysts for Oxygen Reduction in Acidic Media

In this study, several peat-derived carbons (PDC) were synthesized using various carbonization protocols. It was found that depending on the carbonization method, carbons with very different surface morphologies, elemental compositions, porosities, and oxygen reduction reaction (ORR) activities were obtained. Five carbons were used as carbon supports to synthesize Co-N/PDC catalysts, and five different ORR catalysts were acquired. The surface analysis revealed that a higher nitrogen content, number of surface oxide defects, and higher specific surface area lead to higher ORR activity of the Co-N/PDC catalysts in acidic solution. The catalyst Co-N/C-2(ZnCl2), which was synthesized from ZnCl2-activated and pyrolyzed peat, showed the highest ORR activity in both rotating disk electrode and polymer electrolyte membrane fuel cell tests. A maximum power density value of 210 mW cm−2 has been obtained. The results of this study indicate that PDCs are promising candidates for the synthesis of active non-platinum group metal type catalysts.

Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements

Ion bombardment provides an opportunity to study basic properties of intrinsic defects in materials since the radiation-induced disorder accumulation depends on the balance between defect generation and migration rates. In particular, variation of such parameters as irradiation temperature and ion flux, known in the literature as dose-rate effect, interconnects the macroscopically measured lattice disorder with the migration barrier of the dominating defects. In this work, we measured the dose-rate effect in monoclinic gallium oxide (β-Ga2O3) and extracted its activation energy of 0.8 ± 0.1 eV in the range of 25–250 °C. Taking into account that the measurements were performed in the Ga-sublattice and considering 0.8 ± 0.1 eV in the context of theoretical data, we interpreted it as the migration barrier for Ga vacancies in β-Ga2O3, limiting the process. Additionally, we observed and took into account an interesting form of the lattice relaxation due to radiation-induced disorder buildup, interpreted in terms of the compressive strain accumulation, potentially trigging phase transitions in Ga2O3 lattice.

NMR-based serum and muscle metabolomics for diagnosis and activity assessment in idiopathic inflammatory myopathies.

Differentiating smoldering disease activity from weakness due to fatty replacement of atrophied muscle can often be a challenge inthe idiopathic inflammatory myositis (IIM).We aimed to identify the metabolic disturbances associated with IIM and if these changes can aid in the assessment of disease activity. Metabolic profiles of sera (N=99) and muscle (N=21) from patients with IIM(ACR-EULAR criteria) were comparedwith healthy control (HC) samples (N=75 for serum and N=12 for muscle tissues) employing 800MHz NMR (Nuclear Magnetic Resonance) spectroscopy. Metabolic disparity between IIM and HC was established based on Partial Least Squares Discriminant Analysis (PLS-DA) and the discriminatory metabolites were identified based on variable importance in projection (VIP) statistics(P-value<.05, corrected for false discovery rate (FDR)). Serum metabolomics profiles were distinctive in IIM as compared to HC, with a visible shift to anaerobic metabolism (increased lactate, low glucose), oxidative defect (high Phenylalanine/tyrosine), decreased muscle mass (low serum creatinine), increased muscle catabolism (increased branched-chain amino acids), and dyslipidemia (higher lipids, higher very low-density lipoprotein [VLDL]/low-density lipoprotein [LDL] ratio, lower polyunsaturated fatty acid [PUFA]). The sera of active IIM patients were characterized by anaerobic metabolism (low glucose), loss of muscle mass (low creatinine, amino acids), and oxidative defect (high Phenylalanine/tyrosine). Three metabolites (isopropanol, succinate, and glycine) were distinctive in muscle tissue metabolomics. NMR-based serum metabolic disparity was lacking between different clinical subsets of IIM. Serumand muscle tissue metabolomics have the potential to distinguish (a) IIM from HC and (b) active IIM from inactive IIM irrespective of disease subtype.

Neutron irradiation induced defects in oxides and their impact on the oxide properties

Understanding the irradiation-induced defects in oxides is of interest for a wide range of applications. ZnO is an interesting oxide with mixed ionic and covalent bonding that contains a variety of point defect structures—making it an excellent model for studying irradiation-induced defects and their impact on properties. Here, we investigate the effects of neutron irradiation on the formation of defects and on the structural, optical, and electrical properties of ZnO single crystals. We observe the formation of vacancies and voids via positron annihilation spectroscopy. Neutron irradiation led to a significant deterioration of the ZnO structure and formed a high concentration of point defects, vacancy clusters, and voids with large disparities in their structure across variable irradiation times. It also led to significant changes in the optical properties and sample color. Irradiation for 444 h induced a high concentration of Cu acceptors as well as a high concentration of Ga donors. Temperature-dependent Hall effect measurements revealed the competing production of donors and acceptors and showed an increase in the slope of the carrier freeze-out curve with increasing irradiation dose. This work demonstrates the combined effects of neutron irradiation in producing a wide range of structural defects, impurities, and dopants in oxides and their enormous impact on modifying the oxide structure and both the optical and electronic properties. It particularly emphasizes the importance of considering the production of new impurities and dopants during the neutron irradiation of oxides.

42-OR: Effects of Oxidative Phosphorylation Complexes Defects on Beta-Cell Function

Background: The pancreatic beta cell is a highly metabolic cell type relying on mitochondrial metabolism for stimulus-secretion coupling. Specifically, the ATP-producing oxidative phosphorylation (OXPHOS) pathway is central to insulin secretion. Although disruptions in ATP production occur in beta cell dysfunction, the exact mechanisms remain unknown. We generated beta cell specific inducible knockout mouse models of OXPHOS Complex I, III, and IV to determine the direct effects of each OXPHOS complex on beta cell function. We hypothesize that individual complexes contribute distinctly to beta cell function. Methods: Male OXPHOSf/f - MIPcreERT mice were administered tamoxifen (150mg/kg) or vehicle by I.P. injection for 5 days. Glucose and insulin tolerance were assessed 3 weeks after induction. Mice were anesthetized with ketamine/xylazine and perfused with PBS followed by 4% PFA. Pancreata were dissected, embedded in OCT, and cut for islet hormone staining. To determine mitochondrial respiration, Seahorse Bioenergetic Flux analysis was performed on isolated islets from all groups. Results: Complex III knockout mice developed severe hyperglycemia and glucose intolerance at 3 weeks post-induction, while insulin tolerance remained the same. The other two models showed a trend towards hyperglycemia starting at 5 weeks, but retained their ability to regulate glucose at 3 weeks. Interestingly, no changes in islet cytoarchitecture were observed in any of the groups. Western blot analyses on islet lysates confirmed a marked, and comparable knockdown of the targeted complex in all 3 models. Defects were seen in glucose-stimulated mitochondrial respiration for all knockout models at 3 weeks. Conclusions: Mice with Complex III deficient beta cells showed a robust diabetic phenotype compared to Complexes I and IV models despite all models having significant knockdown of the targeted complex. This supports the hypothesis that specific OXPHOS complexes contribute differentially to beta cell function. Disclosure A. L. Lang: None. N. Nissanka: None. A. M. Tamayo: None. C. T. Moraes: None. A. Caicedo: None. Funding National Institute of Environmental Health Sciences (R33ES025673)

Fabrication of fanlike L-shaped graphene nanostructures with enhanced thermal/electrochemical properties via laser irradiation

Engineering can be used to create uniquely oriented 2D materials, especially graphene, and can play a crucial role in the development of multifunctional films for applications in supercapacitors and thermal management, imparting excellent electrical and thermal properties to the films. However, the preparation of a uniquely structured graphene film with high-quality often requires a complex multi-step technique. Herein, we propose a facile and efficient one-step laser irradiation process for the synthesis of multifunctional laser-induced graphene electrodes consisting of L-shaped reduced graphene oxide nanosheets with vertical alignment (VrGO). Notably, the instantaneous high thermal energy of the laser irradiation can heal the defects of graphene oxide (GO) nanosheets, thus, enhancing the electrical conductivity and crystallinity while inducing the vertical alignment. Additionally, the vertical alignment of high-quality GO nanosheets leads to more isotropic thermal transport, thus, enhancing the out-of-plane thermal conductivity to 6.202 W m−1K−1. GO nanosheets also exhibited superior performances as supercapacitor electrodes, demonstrating an outstanding areal capacitance of 36.8 mF cm−2 at 1.2 mA cm−2, and excellent stability up to 10,000 cycles of charging/discharging. This simple laser technique opens up new possibilities for engineering the structural and physical properties of graphene for applications in various fields that require functional thin films.

(Invited) High-Speed and Low-Power Electronics – from Vertical III-V Nanowires to Oxides

The future of electronics is facing ever more stringent requirements in terms of low power consumption and versatile functionality, which the industry workhorse Si CMOS will not be able to fulfil on its own [1]. III-V vertical nanowire (vNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) and tunnel FETs (TFETs), integrated on Si substrates, are promising complements to Si CMOS for high-speed and low-power applications. A major challenge for III-V vNW MOSFETs is the minimisation of parasitic capacitances and the realisation of a high-quality gate oxide [2]. In this talk, first, a comprehensive and consistent summary of the quality of Al2O3/HfO2 gate oxides in III-V vNW FETs will be presented. Besides their application in transistors, oxides have attracted a lot of interest due to their possible use as memristors for non-volatile memory as well as for in-memory and neuromorphic computing [3]. In the second part of this talk, ongoing work will be presented on new approaches to tune oxide properties for memory functionality.The appeal of III-V vNW FETs lies in the high mobility/injection velocity of III-V materials, the possibility for complex band structure design, and the decoupling of the gate length from the device footprint [4]. In high-electron-mobility transistors (HEMTs), the superior III-V materials qualities have been translated to operation frequencies of f T ≈ 700 GHz [5] and f max ≈ 1.5 THz [6], which is up to three times as high as in Si. However, HEMTs face limitations in terms of electrostatic scaling, so that MOSFETs are attracting increased interest for high-frequency applications. In III-V vNW MOSFETs, which can be scaled more aggressively than HEMTs, f T and f max of about 150 GHz has been demonstrated, which is limited by parasitic capacitances related to the gate oxide [7]. Another oxide-related challenge, common to different architectures of III-V MOSFETs, is the stability of the threshold voltage V T due to defects in the gate oxide; the same oxide defects can also cause low-frequency noise, hysteresis in the current-voltage characteristics, and losses in the high-frequency gains. The same effects are observed in III-V vNW TFETs with inverse subthreshold slopes below 60 mV/decade and here, results will be presented for all of these effects.Besides the characterisation of gate oxide defects, approaches to non-volatile thin-film oxide resistive memory will be presented, which are based on the engineering of strain to achieve ferroelectricity, or of ionic conductivity to control resistance via a Schottky barrier [8]. Recently, it was demonstrated that oxide memory can be integrated directly on top of III-V vNW transistors [9] so that together, oxides and vNW transistors offer extensive design space to complement Si CMOS for highly specialised high-speed and low-power applications.[1] S. Salahuddin et al., Nature Electronics 2018, doi: 10.1038/s41928-018-0117-x[2] J. Franco et al., IEEE IEDM 2017, doi: 10.1109/IEDM.2017.8268347[3] An Chen, Solid-State Electronics 2016, doi: 10.1016/j.sse.2016.07.006[4] H. Riel et al., MRS Bulletin 2014, doi: 10.1557/mrs.2014.137[5] E.-Y. Chang et al., Applied Physics Express, doi: 10.7567/apex.6.034001[6] X. Mei, IEEE EDL 2015, doi: 10.1109/LED.2015.2407193[7] O.-P. Kilpi et al., Electronics Letters, doi: 10.1049/el.2020.0266[8] S. Cho et al., Nature Communications 2016, doi: 10.1038/ncomms12373[9] M.S. Ram et al., IEEE EDL 2020, doi: 10.1109/LED.2020.3013674