Zinc oxide doped with several different metal oxides are smart ceramic semiconductors possessing nonohmic properties, which exhibit abruptly increasing current in accordance with increasing voltage. This non-ohmicity of current–voltage properties is because of the presence of a double Schottky barrier (DSB) formed at active grain boundaries containing many trap states. Owing to highly non-ohmicity, these ceramic devices are used widely in the field of overvoltage protection systems from electronic circuits to electric power systems [1, 2]. ZnO non-ohmic ceramics are generally divided into two categories, called Bi2O3-based and Pr6O11-based ceramics, in terms of non-ohmicity-forming oxides. ZnO–Bi2O3based ceramics have been mainly studied in various aspects since ZnO non-ohmic ceramics were discovered. Although ZnO–Bi2O3-based ceramics show excellent non-ohmic properties, Bi2O3 reacts easily with some or many, but not all, of the metals used in preparing multilayer chip non-ohmic ceramics, and it destroys the multilayer structure [3]. And it is reported to have an additional insulating spinel phase, which does not play any role in electrical conduction [3]. Recently, ZnO Pr6O11-based ceramics have been studied in order to improve a few drawbacks [3] associated with Bi2O3 [4–12]. Nahm et al. reported that Zn–Pr–Co–Cr–R oxide (R = Er, Y, Dy, La)-based ceramics have highly non-ohmic properties [6, 8, 11, 12]. To develop the non-ohmic ceramics of high performance, it is very important to comprehend the effects of the additives on non-ohmic properties. No study of the effects of Tb4O7 (terbium oxide) on the non-ohmic properties has been reported. In the present study, the effect of Tb4O7 on the microstructure and non-ohmic properties of ZPCCT (ZnO–Pr6O11–CoO–Cr2O3–Tb4O7)-based ceramics was examined. Reagent-grade raw materials were prepared for ZnO non-ohmic ceramics with composition expression, such as (98.0-x) mol% ZnO + 0.5 mol% Pr6O11 + 1.0 mol% CoO + 0.5 mol% Cr2O3 + x mol% Tb4O7 (x = 0.0, 0.25, 0.5, 0.75, 1.0). Raw materials were mixed by ball milling with zirconia balls and acetone in a polypropylene bottle for 24 h. The mixture was calcined in air at 750 C for 2 h. The powder was pressed into discs of 10 mm diameter and 2 mm thickness at a pressure of 80 MPa. The discs were sintered at 1350 C for 1 h. The final samples were 8 mm in diameter and 1.0mm in thickness. Silver paste was coated on both faces of samples and the electrode was formed by heating at 600 C for 10 min. The area of electrodes was approximately 0.196 cm. The surface microstructure was examined by scanning electron microscopy (SEM, Model S2400, Hitachi, Japan). The average grain size (d) was determined by the lineal intercept method [13]. The compositional analysis of the selected areas was determined by an attached energy dispersion X-ray analysis (EDX) system. The crystalline phases were identified by powder X-ray diffraction (XRD, Model D/max 2100, Rigaku, Japan) with CuKa radiation. The sintered density (q) was measured by the Archimedes method. The current– voltage (I–V) characteristics of ZPCCT-based ceramics C.-W. Nahm (&) Department of Electrical Engineering, Dongeui University, Busan 614-714, Korea e-mail: cwnahm@deu.ac.kr J Mater Sci (2006) 41:8382–8385 DOI 10.1007/s10853-006-0775-3
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