We have been developing Josephson-CMOS hybrid memories where high-density CMOS devices are used as storage cells. One of the key components in the system is the interface circuit, which amplifies the signal from the SFQ circuits into voltage level processible in the CMOS circuits at high-speed. In this paper, we have implemented the ultra-fast interface circuit, which is composed of a Josephson driver and a Josephson-CMOS hybrid amplifier. The propagation delay of the ultra-fast interface circuit is estimated to be about 60 ps assuming a 2.5 kA/cm 2 Nb process and a 0.6 μm CMOS process. A low speed test results of the interface circuit shows that it amplifies the input voltage of 80 μV to 0.9 V. We have also investigated their propagation delay and output voltage swing assuming the spread of the critical current in the Josephson stack.