A Locally Adaptive Multimode Photodetector Circuit

Abstract

Photodetection circuits form the first stage of the artificial image acquisition process. The image acquisition circuits discussed in this paper pertain to circuits fabricated in a standard CMOS process. Such circuits offers advantages such as random access to a pixel, faster readout, integration of processing circuitry on the same die, low voltage and low power dissipation, and lower cost over the conventional Charge Coupled Device (CCD) process. We describe a new locally adaptive multimode photodetector circuit. The advantages of the circuit are local adaptation, wide dynamic range, excellent sensitivity, and large output voltage swing. The circuit was fabricated in the 2μ CMOS process through MOSIS. Simulation and experimental results of the circuit are given.