Outer Gate Research Articles

The Gate of Ki Ranggo Wirosentiko's Grave: Traces of Non-Islamic Cultural Acculturation in the Material Culture Heritage of the Palembang Sultanate

Palembang is known as one of the centers of the Palembang Sultanate. One of the most important cultural relics in Palembang is the Palembang Sultan Cemetery complex. Each of these cemetery complexes has a different architectural shape of the tomb, one of which is the tomb complex of Ki Ranggo Wirosntiko. A Striking distinction in this tomb is the shape of the tomb gate complex building that depicts influences in non-Islam culture. This article will explain the differences in shape in the building of the gate and the influence of non-Islamic culture on the shape of the tomb gate of Ki Ranggo Wirosentiko. The method used is the archeological method using a stylistic analysis of the observation of the ornaments found in the gates of this complex. The results of this study show that the building of the tomb gate of Ki Ranggo Wirosentiko shows acculturation with non-Islamic culture. The profile of the outer gate depicting Hindu influence is marked by the similarity with the stylistic elements in the Bentar temple and Paduraksa Temple, East Java. The resemblance is also visible on the profile of the foot and the mould of the gate resembling the profile found in the Paduraksa Temple. On the profile of the third gate, there is an inscription of the year 1142 H or 1730 M using Arabic letters. The local influence appears on the third gate's appearance, indicating the presence of mustak. Based on the profile of the building of the tomb gate Ki Ranggo Wirosentiko shows the influence of Hindu, Buddhist, Arab, and local cultures on the decorative range of the construction of the grave of the temple.

Mimicking the retinal neuron functions by a photoresponsive single transistor with a double gate

To realize a low-cost neuromorphic visual system, employing an artificial neuron capable of mimicking the retinal neuron functions is essential. A photoresponsive single transistor neuron composed of a vertical silicon nanowire is proposed. Similar to retinal neurons, various photoresponsive characteristics of the single transistor neuron can be modulated by light intensity as well as wavelength and have a high responsivity to green light like the human eye. The device is designed with a cylindrical surrounding double-gate structure, enclosed by an independently controlled outer gate and inner gate. The outer gate has the function of selectively inhibiting neuron activity, which can mimic lateral inhibition of amacrine cells to ganglion cells, and the inner gate can be utilized for the adjustment of the firing threshold voltage, which can be used to mimic the regulation of photoresponsivity by horizontal cells for adaptive visual perception. Furthermore, a myelination function that controls the speed of information transmission is obtained according to the inherent asymmetric source/drain structure of a vertical silicon nanowire. This work can enable photoresponsive neuronal function using only a single transistor, providing a promising hardware implementation for building miniaturized neuromorphic vision systems at low cost.

Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET

In this paper, the temperature-dependent gate-induced drain leakage (GIDL) current model is proposed with the help of a lateral electric field (EL) across the inner and outer gate interfaces of the junctionless double-gate-all-around (JL-DGAA) field-effect transistor (FET). The EL at the interface is obtained from the surface potential equation after solving the 3D Poisson equation with appropriate boundary conditions. The derived model is validated using the well-calibrated TCAD simulator platform with experimental data. A higher GIDL current at the outer gate-channel interface is observed compared to the inner gate-channel interface in the OFF-state conditions due to the high EL between the channel and drain, which is reported for the first time here. The effect of temperature (from 200 K to 500 K) on the GIDL current is also observed, which increases linearly with increasing temperature. Further, the impact of induced mechanical stress (MS) is investigated on the GIDL current, where the GIDL current increases exponentially with increasing induced MS due to effective mass and band gap reduction. Finally, the dynamic performance is investigated in terms of the gate delay time as a function of channel length and temperature. The gate delay diminishes with decreasing channel length and increasing temperature, which shows the switching speed and ability of the device.

Double channeled nanotube gate all around field effect transistor with drive current boosted

Gate all around field effect transistor (GAAFET) presents a resurgence ascribed to its enhanced gate electrostatic controllability by virtue of surrounding gate structure in coping with increasingly serious power consumption dissipation and short channel effects (SCE) degradation as the semiconductor technology enters into sub-10 nm technology node. Nanotube GAAFET (NT GAAFET) with inner and outer channels surrounded by inner and outer gates proves to be superior than nanowire GAAFET in drive current (Ion) augmentation and SCEs inhibition attributed to enhanced gate electrostatic integrity, holding promise to expand the Moore's law Roadmap further beyond. Herein, we demonstrate a doubled-channeled NT GAAFET (DC NT GAAFET) structure with Ion (total value) boost in comparison with NT GAAFET and NW GAAFET with the same footprint. Ion gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared with NT GAAFET and NW GAAFET. Ioff (total value) of DC NT GAAFET degrades by 61.8% than that of NT GAAFET. Whereas SS and Ion/Ioff ratio are almost comparable in DC NT GAAFET and NT GAAFET, indicating the sustained superior gate electrostatic controllability in DC NT GAAFET with respect to NT GAAFET regardless of additional channel incorporated. On the other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance than NW GAAFET in terms of high operation speed and better electrostatic controllability manifested by suppressed SCEs.

Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture

The performance of a silicon nanotube-based feedback field-effect transistor (SiNT FBFET) with a core-source architecture has been explored in this work for the use in logic-in-memory (LIM) applications. Both n-channel and p-channel FETs with extremely symmetric transfer characteristics and a high ON/OFF current ratio of 109 are implemented in a single structure using the core and outer gates. SiNT FBFET exhibits significant data retention attributes during memory operations for up to 103 s. The SiNT FBFET-based inverter circuit retains output logic states of “1” and “0” for 1.705 s and 1.948 s, respectively, at megahertz operating frequency without standby power consumption. Additionally, SiNT FBFET has also been used to build ternary NAND/NOR logic gates with memory functionality. Numerical mixed-mode simulations of the circuits have been carried out using the commercially available Synopsys “Sentaurus” TCAD tool for examining the performance and memory characteristics of SiNT FBFETs. This study demonstrates the possible use of SiNT FBFET in multivalued logic systems and the development of next-generation memory devices.

Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL

AbstractIn the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dimensional parameters such as the nanotube thickness, core and outer gates thickness and gate electrode work function shows the significant impact on the band to band tunneling in lateral direction (L‐BTBT) which induced GIDL current. It is analyzed that increase in the nanotube thickness and physical oxide thickness increase the GIDL current, while increasing the gate electrode work function, core gate and outer gate thicknesses gives reduced GIDL current. The SiGe S/D NTJLFET produce a remarkable high ION/IOFF ratio ~ 1011. A compact model for GIDL current is also developed which shows the dependency of structure parameters on leakage current. The SiGe has been incorporated as source and drain in NTJLFET which creates the energy band discontinuity. Furthermore, SiGe S/D NTJLFET is fairly compared with the conventional NT JLFET and nanowire (NW) JLFET and shows an improved performance.

Slc11 Synapomorphy: A Conserved 3D Framework Articulating Carrier Conformation Switch.

Transmembrane carriers of the Slc11 family catalyze proton (H+)-dependent uptake of divalent metal ions (Me2+) such as manganese and iron-vital elements coveted during infection. The Slc11 mechanism of high-affinity Me2+ cell import is selective and conserved between prokaryotic (MntH) and eukaryotic (Nramp) homologs, though processes coupling the use of the proton motive force to Me2+ uptake evolved repeatedly. Adding bacterial piracy of Nramp genes spread in distinct environmental niches suggests selective gain of function that may benefit opportunistic pathogens. To better understand Slc11 evolution, Alphafold (AF2)/Colabfold (CF) 3D predictions for bacterial sequences from sister clades of eukaryotic descent (MCb and MCg) were compared using both native and mutant templates. AF2/CF model an array of native MCb intermediates spanning the transition from outwardly open (OO) to inwardly open (IO) carriers. In silico mutagenesis targeting (i) a set of (evolutionarily coupled) sites that may define Slc11 function (putative synapomorphy) and (ii) residues from networked communities evolving during MCb transition indicates that Slc11 synapomorphy primarily instructs a Me2+-selective conformation switch which unlocks carrier inner gate and contributes to Me2+ binding site occlusion and outer gate locking. Inner gate opening apparently proceeds from interaction between transmembrane helix (h) h5, h8 and h1a. MCg1 xenologs revealed marked differences in carrier shape and plasticity, owing partly to an altered intramolecular H+ network. Yet, targeting Slc11 synapomorphy also converted MCg1 IO models to an OO state, apparently mobilizing the same residues to control gates. But MCg1 response to mutagenesis differed, with extensive divergence within this clade correlating with MCb-like modeling properties. Notably, MCg1 divergent epistasis marks the emergence of the genus Bordetella-Achromobacter. Slc11 synapomorphy localizes to the 3D areas that deviate least among MCb and MCg1 models (either IO or OO) implying that it constitutes a 3D network of residues articulating a Me2+-selective carrier conformation switch which is maintained in fast-evolving clades at the cost of divergent epistatic interactions impacting carrier shape and dynamics.

High-resolution structures with bound Mn2+ and Cd2+ map the metal import pathway in an Nramp transporter.

Transporters of the Nramp (Natural resistance-associated macrophage protein) family import divalent transition metal ions into cells of most organisms. By supporting metal homeostasis, Nramps prevent diseases and disorders related to metal insufficiency or overload. Previous studies revealed that Nramps take on a LeuT fold and identified the metal-binding site. We present high-resolution structures of Deinococcus radiodurans (Dra)Nramp in three stable conformations of the transport cycle revealing that global conformational changes are supported by distinct coordination geometries of its physiological substrate, Mn2+, across conformations, and by conserved networks of polar residues lining the inner and outer gates. In addition, a high-resolution Cd2+-bound structure highlights differences in how Cd2+ and Mn2+ are coordinated by DraNramp. Complementary metal binding studies using isothermal titration calorimetry with a series of mutated DraNramp proteins indicate that the thermodynamic landscape for binding and transporting physiological metals like Mn2+ is different and more robust to perturbation than for transporting the toxic Cd2+ metal. Overall, the affinity measurements and high-resolution structural information on metal substrate binding provide a foundation for understanding the substrate selectivity of essential metal ion transporters like Nramps.

Structural basis of metal import by Nramp family transporters.

Transition metal ions like Mn2+ and Fe2+ play a crucial role in various metabolic processes in all living cells. Excess or deficiency of these essential nutrients leads to diseases including cancer, anemia etc. Cellular levels of these metals are thus tightly controlled and regulated. Nramps (natural resistance-associated macrophage proteins), a class of transition metal transporters present in all domains of life, regulate the levels of these divalent metal ions within cells and prevent disorders related to metal insufficiency or overload. In humans, there exists two Nramps: Nramp2 is indispensable for Fe2+ and Mn2+ homeostasis, while Nramp1 provides resistance against intracellular pathogens by competing with the pathogen's metal transporters (including Nramp homologs) for acquisition of essential metal ions. Nramp-mediated metal ion transport typically involves co-transported protons. A few structures of Nramps are reported to date which reveal their overall LeuT-fold and provide a preliminary understanding of metal binding and proton co-transport. To better understand the metal import mechanism, we resolved high-resolution structures of Deinococcus radiodurans Nramp (DraNramp) in three conformations in both Mn2+-bound and metal-free states, providing the first molecular map of the entire Mn2+ transport cycle. The structures reveal that global conformational changes during transport are supported by distinct coordination geometries of its physiological substrate, Mn2+, across conformations and conserved networks of polar residues lining the inner and outer gates. A Cd2+-bound structure highlights differences in coordination geometry for Mn2+ and Cd2+. Binding studies using isothermal titration calorimetry along with transport and mutational analyses reveal that the thermodynamic landscape for binding and transporting physiological metals is different and more robust to perturbation than for transporting the toxic Cd2+ metal. Overall, our results lay a foundation for understanding how metal ion transporters like Nramps evolve their substrate selectivity to different ecological niches.

Investigation of the transport cycle of sodium glucose transport proteins through computational simulation.

The human Sodium-Glucose Linked Transporter hSGLT2 is responsible for the reabsorption of sugar in the kidneys, and as such is a key target for the treatment of type 2 diabetes. SGLTs are found in the cell membrane and use the sodium gradient to transport sugar into cells through an alternating-access mechanism. Experimentally derived structures of the bacterial homolog vSGLT in an inward-open conformation (apo and substrate bound) and the related sialic acid transporter in an outward-open conformation, along with more recent structures of partially inward-open hSGLT1 and partially outward-open inhibitor-bound hSGLT2, give some insight to the transport mechanism. However, the exact nature of the conformational transition and the energetic details that govern the transport cycle remain unclear. We have used molecular dynamics simulations to explore the dynamics of SGLT in the presence or absence of substrate, including unbiased simulations in different conformations, and weighted ensemble simulations using WESTPA to explore the conformational transition landscape. These simulations demonstrate how the presence of substrate can alter the energetics of the conformational landscape; for example, how sugar may lock the outer gate closed, preventing substrate leaks. Improving our understanding of SGLT function through this work is a key step to better inform the treatment of diabetes and other SGLT-related diseases.

Combining Flow Cytometry and Metagenomics Improves Recovery of Metagenome-Assembled Genomes in a Cell Culture from Activated Sludge.

The recovery of metagenome-assembled genomes is biased towards the most abundant species in a given community. To improve the identification of species, even if only dominant species are recovered, we investigated the integration of flow cytometry cell sorting with bioinformatics tools to recover metagenome-assembled genomes. We used a cell culture of a wastewater microbial community as our model system. Cells were separated based on fluorescence signals via flow cytometry cell sorting into sub-communities: dominant gates, low abundant gates, and outer gates into subsets of the original community. Metagenome sequencing was performed for all groups. The unsorted community was used as control. We recovered a total of 24 metagenome-assembled genomes (MAGs) representing 11 species-level genome operational taxonomic units (gOTUs). In addition, 57 ribosomal operational taxonomic units (rOTUs) affiliated with 29 taxa at species level were reconstructed from metagenomic libraries. Our approach suggests a two-fold increase in the resolution when comparing sorted and unsorted communities. Our results also indicate that species abundance is one determinant of genome recovery from metagenomes as we can recover taxa in the sorted libraries that are not present in the unsorted community. In conclusion, a combination of cell sorting and metagenomics allows the recovery of MAGs undetected without cell sorting.

Mutational Insight into Allosteric Regulation of Kir Channel Activity.

Potassium (K+) channels are regulated in part by allosteric communication between the helical bundle crossing, or inner gate, and the selectivity filter, or outer gate. This network is triggered by gating stimuli. In concert, there is an allosteric network which is a conjugated set of interactions which correlate long-range structural rearrangements necessary for channel function. Inward-rectifier K+ (Kir) channels favor inward K+ conductance, are ligand-gated, and help establish resting membrane potentials. KirBac1.1 is a bacterial Kir (KirBac) channel homologous to human Kir (hKir) channels. Additionally, KirBac1.1 is gated by the anionic phospholipid ligand phosphatidylglycerol (PG). In this study, we use site-directed mutagenesis to investigate residues involved in the KirBac1.1 gating mechanism and allosteric network we previously proposed using detailed solid-state NMR (SSNMR) measurements. Using fluorescence-based K+ and sodium (Na+) flux assays, we identified channel mutants with impaired function that do not alter selectivity of the channel. In tandem, we performed coarse grain molecular dynamics simulations, observing changes in PG-KirBac1.1 interactions correlated with mutant channel activity and contacts between the two transmembrane helices and pore helix tied to this behavior. Lipid affinity is closely tied to the proximity of two tryptophan residues on neighboring subunits which lure anionic lipids to a cationic pocket formed by a cluster of arginine residues. Thus, these simulations establish a structural and functional basis for the role of each mutated site in the proposed allosteric network. The experimental and simulated data provide insight into key functional residues involved in gating and lipid allostery of K+ channels. Our findings also have direct implications on the physiology of hKir channels due to conservation of many of the residues identified in this work from KirBac1.1.

DC and RF analysis of vertical 3D p-type silicon nanotube FET for low power applications

ABSTRACT A vertical p-type 3D silicon nanotube field effect transistor (p-type Si-NTFET) is designed and simulated by using the tool Sentaurus Technology computer-aided design (TCAD). To improve the performance with reduced short channel effects, Si-NTFET device is created with inner and outer gate structures. The performance of the proposed device is analysed in terms of outer gate length. The vertical 3D p-type Si-NTFET gives an on state current (I ON) of −2.084 × 10−3 A/µm, off state current of (I OFF) of −2.457 × 10−12A/µm and subthreshold swing of the p-type Si-NTFET device is 53 mV/dec at V DS of −0.3 V. The obtained I ON/I OFF ratio of the device is 109. The capacitances (C GD, C GG) and the transconductance (g m) and cutoff frequency (f t) of the device are also analysed. The simulated p-type Si-NTFET device has proved that the device is suitable for low-power applications.

Probing the Structural Dynamics of the Activation Gate of KcsA Using Homo-FRET Measurements.

The allosteric coupling between activation and inactivation processes is a common feature observed in K+ channels. Particularly, in the prokaryotic KcsA channel the K+ conduction process is controlled by the inner gate, which is activated by acidic pH, and by the selectivity filter (SF) or outer gate, which can adopt non-conductive or conductive states. In a previous study, a single tryptophan mutant channel (W67 KcsA) enabled us to investigate the SF dynamics using time-resolved homo-Förster Resonance Energy Transfer (homo-FRET) measurements. Here, the conformational changes of both gates were simultaneously monitored after labelling the G116C position with tetramethylrhodamine (TMR) within a W67 KcsA background. At a high degree of protein labeling, fluorescence anisotropy measurements showed that the pH-induced KcsA gating elicited a variation in the homo-FRET efficiency among the conjugated TMR dyes (TMR homo-FRET), while the conformation of the SF was simultaneously tracked (W67 homo-FRET). The dependence of the activation pKa of the inner gate with the ion occupancy of the SF unequivocally confirmed the allosteric communication between the two gates of KcsA. This simple TMR homo-FRET based ratiometric assay can be easily extended to study the conformational dynamics associated with the gating of other ion channels and their modulation.

Amersfoort’s city walls

The development of Amersfoort’s two city walls can be divided into five periods. The first city wall was built in the first period 1259-1379. Although Amersfoort had been granted a charter in 1259, construction of the wall did not commence until after a serious assault by troops from the duchy of Gelre (Geulders) in 1274. The defensive wall was made stronger on that side, probably in expectation of more attacks from that direction.
 Between 1380 and 1500 Gelre troops attacked Amersfoort on multiple occasions and offensive firepower increased. Interestingly, Amersfoort opted to build a second city wall rather than reinforcing the existing one, considerably increasing the size of the city in the process. However, the project proved difficult to finance, defend and maintain, most likely due to the stagnating economy. Instead of being demolished after the second wall was in place, the first wall was reinforced with abutting houses, thereby becoming a kind of rampart within a rampart.
 The new fortifications turned out to be ineffective and in 1501 the city council decided to demolish the first city wall. This freed up space for a second generation of wall houses, mostly built from reused stone and with their front elevation on the trajectory of the first wall, with the exception of the houses along Krankeledenstraat and the southern section of Breestraat. In this same period, up until 1644, there was an attempt to strengthen Amersfoort’s defences. Several fortification plans were drawn up, none of which was implemented in its entirety, most probably due to a lack of financial resources. The ramparts that were realized are concentrated in the south-west since in this period the possibility of a new Spanish incursion was greater than any threat from Gelre.
 In the third period, 1645-1828, the council’s approval of additional openings in the city wall marked the beginning of a gradual deterioration of the defensive works. They had always been a big budget item, yet they had not been particularly effective. Accordingly, the council decided to convert the fortifications into lucrative functions. The Davidsbolwerk, for example, was turned into a cemetery. The most extensive demolition probably started in 1778 when it was also decided to dismantle various outer and inner gates in the second city wall.
 By 1829 the fortifications had entirely lost their defensive function and the city council proposed converting the outer line into a green pathway encircling the city, which would have resulted in the disappearance of all remaining traces of the wall. However, this was averted in 1844 by a national ban on the demolition of fortifications and they were subsequently integrated with the walking route. City planners continued to submit applications for demolition but encountered fierce resistance from heritage organizations. In addition, many remnants avoided demolition because most urban expansion occurred outside the historical centre. This resulted in a concomitant shift in the economic focus so that the fortifications no longer needed to be sacrificed to industrial development. Towards the end of the nineteenth century, with appreciation for the heritage value of fortifications growing, money became available for their restoration and Amersfoort’s historical centre was declared a conservation area.

Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon Nanotube.

In this paper, a 1T-DRAM based on the junctionless field-effect transistor (JLFET) with a silicon-germanium (SiGe) and silicon (Si) nanotube structure was designed and investigated by using technology computer-aided design (TCAD) simulations. Utilizing bandgap engineering to make a quantum well in the core-shell structure, the storage pocket is formed by the difference in bandgap energy between SiGe and Si. By applying different voltage conditions at the inner gate and outer gate, excess holes are generated in the storage region by the band-to-band tunneling (BTBT) mechanism. The BTBT mechanism results in the floating body effect, which is the principle of 1T-DRAM. The varying amount of the accumulated holes in the SiGe region allows differentiating between state "1" and state "0." Additionally, the outer gate plays a role of the conventional gate, while the inner gate retains holes in the hold state by applying voltage. Consequently, the optimized SiGe/Si JLFET-based nanotube 1T-DRAM achieved a high sensing margin of 15.4 μA/μm, and a high retention time of 105 ms at a high temperature of 358 K. In addition, it has been verified that a single cycle of 1T-DRAM operations consumes only 33.6 fJ of energy, which is smaller than for previously proposed 1T-DRAMs.

Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes

In this study, we explored the key properties and functionalities of plasma enhanced atomic layer deposition (PEALD) SiNx films, synthesized using different deposition temperatures (500–550 °C) and plasma conditions (lower and higher), both on 300 mm blanket Si and on several integrated 3D topology substrates, at the thicknesses relevant for diverse nanoscale applications. Our study shows that with an increase of temperature (500–550 °C), a small reduction in HF wet etch rate (1.1–0.69 nm/min), and H content (9.6% vs 7.4%) was observed. When using higher plasmas, significant improvements in blanket properties were observed. The films were denser (2.95 g/cm3), exhibited lower H content (2.4%), showed better etch rates (0.39 and 0.44 nm/s for HF and CF4 based), and SiNx grew without any nucleation delay on alternative Si1−xGex channel surfaces. The vertical and lateral conformality was found to be similar and appears not to be impacted with the plasma conditions. Extensive steam oxidation barrier studies performed at the sidewalls of different aspect ratio lines showed the PEALD SiNx liner scaling potentiality down to 1 nm when deposited using higher plasma. In addition, the outer gate and inner spacer properties were found to be superior (with lower loses) for higher plasma films when subjected to several dry etch, strips, and H3PO4 chemistries. The outstanding conformality (90%–95% on aspect ratios ≤10:1) combined with excellent high end material properties in the ultrathin regimes (1–10 nm) corroborate the virtue of PEALD SiNx toward integration in scaled down and advanced nanoelectronics device manufacturing.

Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs

The present article deals with the analytical modeling of threshold voltage of an ultra-thin nanotube Junctionless double-gate-all-around (NJL-DGAA) metal-oxide-semiconductor field-effect-transistor (MOSFET). Under the condition of full depletion, the modeling of the surface potential relating to inner and outer gates of the device has been performed by solving three-dimensional Poisson's equation in cylindrical coordinates with appropriate boundary conditions. Corresponding to inner and outer channel potential expressions, the two different threshold voltages of the device are obtained. Moreover, the connection between the source-to-drain subthreshold current and threshold voltage is investigated. The drain-induced-barrier-lowering (DIBL) as an indicator of short-channel effects has been studied. Further, the quantum confinement effects have been explored through quantum mechanical correction in the threshold voltage model. The model outcomes are compared with data extracted from ATLAS™ TCAD simulations, and good acceptances have been observed.

Comparative performance analysis of Carbon Nanotube and Si-Nanotube based Field effect Transistors

The continuous scaling of scaling of conventional planar transistors has migrated to nanoscale regime to achieve better performance of the device by mainstream semiconductor industry. To suppress the short channel effects arises in nanoscale devices, many 3D devices and materials have been proposed and investigated. Carbon Nanotube can be used as best materials for replacement of channel material MOSFET transistors due to its good electrical properties. Silicon nanotube field effect transistor is having two gates as an inner and outer gates, provides excellent electrostatic control and short channel effects immunity. In this paper, Carbon Nanotube Field Effect Transistor and Si- Nanotube field effect transistors have been designed and investigated. Performance of CNTFET and Si-NT MOSFET has been analysed and compared. These two field effect transistors may be considered for future of semiconductor industry.

Linearity performance analysis of junctionless nanotube tunnel field effect transistor

The article provides linearity performance parameter of junctionless nanotube TFET (JL-NT-TFET) for the application of ultra-low standby power and radio frequency ICs (RFICs). The proposed charge plasma device uses an inner gate with a similar workfunction as the outer gate electrode. The inner gate of the device provides better electrostatic controllability, increases turn-on capability. JL-NT-TFET shows the subthreshold swing of 20.5 mV decade, minimum leakage current, and higher current as compared to junctionless nanowire TFET (JL-NW-TFET). Linearity performance analyzed in terms of VIP2, VIP3, IIP3 and 1-dB compression point. Results obtained from JL-NTTFET is further compared to JL-NW-TFET. Simulation results of both the devices indicate that the JL-NT-TFET shows better linearity performance, hence it can be applied to low power high-frequency applications.