Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture

Abstract

The performance of a silicon nanotube-based feedback field-effect transistor (SiNT FBFET) with a core-source architecture has been explored in this work for the use in logic-in-memory (LIM) applications. Both n-channel and p-channel FETs with extremely symmetric transfer characteristics and a high ON/OFF current ratio of 109 are implemented in a single structure using the core and outer gates. SiNT FBFET exhibits significant data retention attributes during memory operations for up to 103 s. The SiNT FBFET-based inverter circuit retains output logic states of “1” and “0” for 1.705 s and 1.948 s, respectively, at megahertz operating frequency without standby power consumption. Additionally, SiNT FBFET has also been used to build ternary NAND/NOR logic gates with memory functionality. Numerical mixed-mode simulations of the circuits have been carried out using the commercially available Synopsys “Sentaurus” TCAD tool for examining the performance and memory characteristics of SiNT FBFETs. This study demonstrates the possible use of SiNT FBFET in multivalued logic systems and the development of next-generation memory devices.