Epitaxial CrN(001) layers, grown by dc magnetron sputtering on MgO(001) substrates at growth temperatures ${T}_{s}$ $=$ 550--850 \ifmmode^\circ\else\textdegree\fi{}C, exhibit electronic transport that is dominated by variable-range hopping (VRH) at temperatures 120 K. A transition from Efros-Shklovskii to Mott VRH at 30 \ifmmode\pm\else\textpm\fi{} 10 K is well described by a universal scaling relation. The localization length decreases from 1.3 nm at ${T}_{s}$ $=$ 550 \ifmmode^\circ\else\textdegree\fi{}C to 0.9 nm for ${T}_{s}$ $=$ 600--750 \ifmmode^\circ\else\textdegree\fi{}C, but increases again to 1.9 nm for ${T}_{s}$ $=$ 800--850 \ifmmode^\circ\else\textdegree\fi{}C, which is attributed to changes in the density of localized states associated with N vacancies that form due to kinetic barriers for incorporation and enhanced desorption at low and high ${T}_{s}$, respectively. The low-temperature transport data provide lower limits for the CrN effective electron mass of $4.9{m}_{e}$, the donor ionization energy of 24 meV, and the critical vacancy concentration for the metal-insulator transition of 8.4 $\ifmmode\times\else\texttimes\fi{}$ 10${}^{19}$ cm${}^{\ensuremath{-}3}$. The room temperature conductivity is dominated by Hubbard band states near the mobility edge and decreases monotonically from 137 \ensuremath{\Omega}${}^{\ensuremath{-}1}$cm${}^{\ensuremath{-}1}$ for ${T}_{s}$ $=$ 550 \ifmmode^\circ\else\textdegree\fi{}C to 14 \ensuremath{\Omega}${}^{\ensuremath{-}1}$cm${}^{\ensuremath{-}1}$ for ${T}_{s}$ $=$ 850 \ifmmode^\circ\else\textdegree\fi{}C due to a decreasing structural disorder, consistent with the measured x-ray coherence length that increases from 7 to 36 nm for ${T}_{s}$ $=$ 550 to 850 \ifmmode^\circ\else\textdegree\fi{}C, respectively, and a carrier density that decreases from 4 $\ifmmode\times\else\texttimes\fi{}$ 10${}^{20}$ to 0.9 $\ifmmode\times\else\texttimes\fi{}$ 10${}^{20}$ cm${}^{\ensuremath{-}3}$, as estimated from optical reflection and Hall effect measurements. The absence of an expected discontinuity in the conductivity at \ensuremath{\sim}280 K suggests that epitaxial constraints suppress the phase transition to a low-temperature orthorhombic antiferromagnetic phase, such that CrN remains a cubic paramagnetic insulator over the entire measured temperature range of 10--295 K. These results contradict previous experimental studies that report metallic low-temperature conduction for CrN, but support recent computational results suggesting a band gap due to strong electron correlation and a stress-induced phase transition.