Organic Molecular Beam Epitaxy Research Articles

A broad-band investigation of ferromagnetic resonance in exchange coupled permalloy/phthalocyanine bilayer heterostructures at room temperature

The phenomenon of ferromagnet/molecule interfacial electronic hybridization enables the possibility of modifying magnetic characteristics of downscaled systems for spintronic applications. Ferromagnetic resonance (FMR) at the nanoscale level through a coplanar waveguide (CPW) over a wide frequency range is a remarkably reliable technique for investigation of the magnetic heterostructure’s interfacial properties and their feasibility in applications as spintronic devices. Here, magnetron sputtering and organic molecular beam epitaxy methods are used to fabricate the following nanoscale heterostructures: permalloy (Py)/Fe phthalocyanine (Pc), Py/ZnPc, and Py/Cr. Magnetization dynamics of the bilayer heterostructures is investigated in a CPW by studying frequency dependence (5–50GHz) of the resonance field and linewidth with parallel and perpendicular geometries of the static applied magnetic field, thereby providing insights into possible intrinsic and extrinsic sources of FMR damping. Planar Pc molecules at the Py layer interface are found to have the potential to contribute to magnetic stabilization based on calculated magnetic parameters. This is evidenced by the larger results of surface anisotropy of the Py/MPc bilayer heterostructures induced by exchange coupling interaction at room temperature as well as the lower values of damping constant.

Interfacial electronic properties of hybrid interfaces

A detailed understanding of interfacial electronic properties of organic–inorganic hybrid junctions is crucial for their technological applications. In case of organic–inorganic hybrid junctions information about interfacial charge transfer, band bending and work function is crucial for efficient charge carrier movement across interfaces. In this context, investigation of filled and empty starts near Fermi level is relevant in molecular electronics to know electron affinity, and charge injection barriers. A multi-technique approach using ultraviolet photoemission and Inverse photoemission spectroscopy provides quantitative information about frontier occupied and unoccupied states near Fermi level, thereby providing crucial information about energy level alignment. Inverse photoemission spectroscopy technique is particularly helpful for the study of the electronic properties at metal–molecule interfaces and thus provides information about transport gap for conjugated organic molecules. Organic molecular beam epitaxy has been extensively utilized to deposit conjugated organic molecular thin films on various oxide, transition metal dichalcogenides and metallic substrates. Novel approaches have been investigated explored in order to control the interfacial energy level alignment by introducing intermediate electron donor and electron acceptor organic molecular layers across interfaces to tune the work function of electrodes. This review summarizes recent advances in exploiting combined approach using photoemission and inverse photoemission spectroscopy for the investigation of electronic properties of conjugated organic molecular interfaces.

Effects of growth temperature on structural and electrical properties of in-rich InAlN–GaN heterostructures by radio-frequency metal–organic molecular beam epitaxy

In-rich InAlN is a promising nitride semiconductor alloy for high-efficiency solar cells and wide-range light-emitting diodes due to its tunable bandgap from 0.7 to 6.2 eV. However, incomplete characterization has led to inconsistent fundamental properties in some studies. The aim of this study was to comprehensively investigate the structural, optical, and electrical properties of In-rich InAlN films grown on GaN/Al2O3 templates by RF-MOMBE at various temperatures. The methodology involved state-of-the-art metrology techniques, such as high-resolution x-ray diffraction (HRXRD), scanning electron microscopy (FE-SEM), Hall effect measurements, and transmission electron microscopy (TEM). The results showed that all InxAl1-xN films were epitaxially grown on the GaN/Al2O3 template, with the indium composition (x) decreasing with increasing growth temperature. Furthermore, phase separation of the In-rich InAlN films occurred at high growth temperatures(>550 °C), resulting in a relatively smooth surface. The optical absorption method measured the band-gap of the InxAl1-xN films, which ranged from 1.7 to 1.9 eV for x values between 0.77 and 0.91. The mobility and carrier concentrations of all In-rich InAlN films were measured at ∼60−277 cm2 V−1-s−1 and 2–7 × 1019 cm3 in the growth temperature of range 450 °C–610 °C, respectively. In conclusion, our comprehensive characterization using advanced metrology methods provides valuable insights into the properties of In-rich InAlN films, which can inform future optimization of these materials for various applications.

Chiral Porphyrin Assemblies Investigated by a Modified Reflectance Anisotropy Spectroscopy Spectrometer.

Reflectance anisotropy spectroscopy (RAS) has been largely used to investigate organic compounds: Langmuir-Blodgett and Langmuir-Schaeffer layers, the organic molecular beam epitaxy growth in situ and in real time, thin and ultrathin organic films exposed to volatiles, in ultra-high vacuum (UHV), in controlled atmosphere and even in liquid. In all these cases, porphyrins and porphyrin-related compounds have often been used, taking advantage of the peculiar characteristics of RAS with respect to other techniques. The technical modification of a RAS spectrometer (CD-RAS: circular dichroism RAS) allows us to investigate the circular dichroism of samples instead of the normally studied linear dichroism: CD-RAS measures (in transmission mode) the anisotropy of the optical properties of a sample under right and left circularly polarized light. Although commercial spectrometers exist to measure the circular dichroism of substances, the "open structure" of this new spectrometer and its higher flexibility in design makes it possible to couple it with UHV systems or other experimental configurations. The importance of chirality in the development of organic materials (from solutions to the solid state, as thin layers deposited-in liquid or in vacuum-on transparent substrates) could open interesting possibilities to a development in the investigation of the chirality of organic and biological layers. In this manuscript, after the detailed explanation of the CD-RAS technique, some calibration tests with chiral porphyrin assemblies in solution or deposited in solid film are reported to demonstrate the quality of the results, comparing curves obtained with CD-RAS and a commercial spectrometer.

Post-Growth Dynamics and Growth Modeling of Organic Semiconductor Thin Films.

The ability to control the properties of organic thin films is crucial for obtaining highly performant thin-film devices. However, thin films may experience post-growth processes, even when the most sophisticated and controlled growth techniques such as organic molecular beam epitaxy (OMBE) are used. Such processes can modify the film structure and morphology and, thus, the film properties ultimately affecting device performances. For this reason, probing the occurrence of post-growth evolution is essential. Equally importantly, the processes responsible for this evolution should be addressed in view of finding a strategy to control and, possibly, leverage them for driving film properties. Here, nickel-tetraphenylporphyrin (NiTPP) thin films grown by OMBE on highly oriented pyrolytic graphite (HOPG) are selected as an exemplary system exhibiting a remarkable post-growth morphology evolution consistent with Ostwald-like ripening. To quantitatively describe the growth, the height-height correlation function (HHCF) analysis of the atomic force microscopy (AFM) images is carried out, clarifying the role of the post-growth evolution as an integral part of the whole growth process. The set of scaling exponents obtained confirms that the growth is mainly driven by diffusion combined with the presence of step-edge barriers, in agreement with the observed ripening phenomenon. Finally, the results together with the overall approach adopted demonstrate the reliability of the HHCF analysis in systems displaying post-growth evolution.

Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes.

We demonstrate vertical integration of nitride-based blue/green micro-light-emitting diodes (µLEDs) stacks with independent junctions control using hybrid tunnel junction (TJ). The hybrid TJ was gown by metal organic chemical vapor deposition (p + GaN) and molecular-beam epitaxy (n + GaN). Uniform blue, green and blue/green emission can be generated from different junction diodes. The peak external quantum efficiency (EQE) of the TJ blue µLEDs and green µLEDs with indium tin oxide contact is 30% and 12%, respectively. The carrier transportation between different junction diodes was discussed. This work suggests a promising approach for vertical µLEDs integration to enhance the output power of single LEDs chip and monolithic µLEDs with different emission colors with independent junction control.

Probing the correlation between morphology and optical anisotropy in ZnTPP films grown at different temperatures

Films of tetraphenylporphyrins (TPP) have been recently investigated for their ability in protecting graphite electrode surfaces from degradation. The effectiveness of the protection depends on both the molecule–substrate and molecule–molecule interactions, which determine the type of film growth and its morphology. For instance, meso-tetraphenyl porphyrin-Zn(II) (ZnTPP) arranges differently depending on the substrate, conditions used for deposition and post-growth treatments. Since many parameters influence film morphology and strategies to reach an efficient protective coverage, here we investigate the role of the substrate temperature in determining morphological variations in thick ZnTPP films. ZnTPP molecules were sublimated by an organic molecular beam epitaxy (OMBE) system on a highly oriented pyrolytic graphite (HOPG) substrate, controlled in temperature by a variable temperature cryostat. The film morphology was characterized by atomic force microscopy (AFM), whereas the type of growth by reflectance anisotropy spectroscopy (RAS), which is highly sensitive to the orientation and type of arrangement of molecules on the substrate; changes in the film valence electronic structure were monitored in situ by UV photoemission spectroscopy (UPS). The comparison between AFM and RAS investigations clearly correlates a ZnTPP film morphology to the characteristic optical signal, both influenced by temperature conditions and diffusivity of molecules on the substrate.

Interface-Driven Assembly of Pentacene/MoS2 Lateral Heterostructures.

Mixed-dimensional van der Waals heterostructures formed by molecular assemblies and 2D materials provide a novel platform for fundamental nanoscience and future nanoelectronics applications. Here we investigate a prototypical hybrid heterostructure between pentacene molecules and 2D MoS2 nanocrystals, deposited on Au(111) by combining pulsed laser deposition and organic molecular beam epitaxy. The obtained structures were investigated in situ by scanning tunneling microscopy and spectroscopy and analyzed theoretically by density functional theory calculations. Our results show the formation of atomically thin pentacene/MoS2 lateral heterostructures on the Au substrate. The most stable pentacene adsorption site corresponds to MoS2 terminations, where the molecules self-assemble parallel to the direction of MoS2 edges. The density of states changes sharply across the pentacene/MoS2 interface, indicating a weak interfacial coupling, which leaves the electronic signature of MoS2 edge states unaltered. This work unveils the self-organization of abrupt mixed-dimensional lateral heterostructures, opening to hybrid devices based on organic/inorganic one-dimensional junctions.

Antimony segregation in an InAs/InAs1−xSbx superlattice grown by metalorganic chemical vapor deposition

Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are two versatile growth techniques that can readily produce multilayer structures with atomic-level precision control, which have found broad applications in technology. However, compared to MBE, MOCVD growth involves the surface reaction of metal-organic precursor compounds, which changes during film deposition. Consequently, a thorough investigation on the chemical profile layer-by-layer is critical for optimizing MOCVD film performance. Here, we examine Sb segregation in an MOCVD-grown InAs/InAs1−xSbx superlattice by analyzing composition and lattice strain at atomic resolution using scanning transmission electron microscopy and compare with the previously reported MBE growth results. Our findings show a different Sb profile along the growth direction in MOCVD, with the segregation coefficient being higher at the InAsSb-on-InAs interface (0.807 ± 0.021) than at the InAs-on-InAsSb interface (0.695 ± 0.009), giving rise to asymmetric composition and lattice strain profiles unlike those obtained with MBE. Furthermore, we obtain direct evidence of Sb clusters with size of ∼1–3 nm and Sb ordering within the InAs1−xSbx layer, which is largely absent in the reported MBE growth. These findings demonstrate the concurrent interplay between surface segregation, surface reconstruction, and surface reaction that is unique to MOCVD growth with broad implications on preparing Sb-containing quantum materials.

Solid-source metal–organic molecular beam epitaxy of epitaxial RuO2

A seemingly simple oxide with a rutile structure, RuO2, has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films, but unfortunately, utilizing atomically controlled deposition techniques, such as molecular beam epitaxy (MBE), has been difficult due to the ultra-low vapor pressure and low oxidation potential of Ru. Here, we demonstrate the growth of epitaxial, single crystalline RuO2 films on different substrate orientations using the novel solid-source metal–organic (MO) MBE. This approach circumvents these issues by supplying Ru using a “pre-oxidized” solid MO precursor containing Ru. High-quality epitaxial RuO2 films with a bulk-like room-temperature resistivity of 55 μΩ cm were obtained at a substrate temperature as low as 300 °C. By combining x-ray diffraction, transmission electron microscopy, and electrical measurements, we discuss the effect of substrate temperature, orientation, film thickness, and strain on the structure and electrical properties of these films. Our results illustrating the use of a novel solid-source metal–organic MBE approach pave the way to the atomic-layer controlled synthesis of complex oxides of “stubborn” metals, which are not only difficult to evaporate but also hard to oxidize.

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics of different surface dimensionalities. The self-catalyzed epitaxial growth of InN nanorods grown by metal–organic molecular-beam epitaxy on GaN/Al2O3(0001) substrates has been demonstrated. The substrate temperature is dominant in controlling the growth of nanorods. A dramatic morphological change from 2D-like to 1D nanorods occurs with decreasing growth temperature. The InN nanorods have a low dislocation density and good crystalline quality, compared with InN films. In terms of optical properties, the nanorod structure exhibits strong recombination of Mahan excitons in luminescence, and an obvious spatial correlation effect in phonon dispersion. The downward band structure at the nanorod surface leads to the photon energy-dependent lifetime being upshifted to the high-energy side.

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

Self-assembled AlN nanowires (NWs) are grown by plasma-assisted molecular beam epitaxy (PAMBE) on SiO2/Si (111) substrates. Using a combination of in situ reflective high energy electron diffraction and ex situ x-ray diffraction (XRD), we show that the NWs grow nearly strain-free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. Scanning electron microscopy investigation reveals significant NWs coalescence, which results in their progressively increasing diameter and formation of columnar structures with non-hexagonal cross-section. Making use of scanning transmission electron microscopy (STEM), the NWs initial diameters are found in the 20–30 nm range. In addition, the formation of a thin (≈30 nm) polycrystalline AlN layer is observed on the substrate surface. Regarding the structural quality of the AlN NWs, STEM measurements reveal the formation of extended columnar regions, which grow with a virtually perfect metal-polarity wurtzite arrangement and with extended defects only sporadically observed. Combination of STEM and electron energy loss spectroscopy reveals the formation of continuous aluminum oxide (1–2 nm) on the NW surface. Low temperature photoluminescence measurements reveal a single near-band-edge (NBE) emission peak, positioned at 6.03 eV (at 2 K), a value consistent with nearly zero NW strain evidenced by XRD and in agreement with the values obtained on AlN bulk layers synthesized by other growth techniques. The significant full-width-at-half-maximum of NBE emission, found at ≈20 meV (at 2 K), suggests that free and bound excitons are mixed together within this single emission band. Finally, the optical properties of the hereby reported AlN NWs grown by PAMBE are comprehensively compared to optical properties of bulk, epitaxial and/or columnar AlN grown by various techniques such as: physical vapor transport, metal organic vapor phase epitaxy, metal organic chemical vapor deposition and molecular beam epitaxy.

Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio

In this study, a two-step surface treatment process combined with pulsed laser deposition (PLD) was developed for obtaining high quality Ga2O3 epi-layers with atomic flat interface and effectively activated dopants. The results showed that semi-insulating Fe-doped Ga2O3 thin film with terraced atomic steps was successfully obtained via the PLD for the first time. The carrier concentration down to 4.39 × 107 cm−3 and square resistance up to 2.26 × 1011 Ω/□ made it comparable to commercial Fe-doped single crystals. Another Sn-doped epi-layer with terraced atomic steps was then deposited on the Fe-doped layer, exhibiting a carrier concentration of 2.01 × 1020 cm−3 and an Sn activating ratio of 41.1%, which broke the bottleneck of low activating ratio in metal organic vapor-phase epitaxy or molecular beam epitaxy. These results demonstrate a simple method to get atomically flat interfaces and tunable charge carriers in Ga2O3 epi-growth and provide a potential material basis for Ga2O3 high electron mobility transistor.

Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell.

Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth.

On-Surface Activation of Trimethylsilyl-Terminated Alkynes on Coinage Metal Surfaces.

The controlled attachment of protecting groups combined with the ability to selectively abstract them is central to organic synthesis. The trimethylsilyl (TMS) functional group is a popular protecting group in solution. However, insights on its activation behavior under ultra-high vacuum (UHV) and surface-confined conditions are scarce. Here we investigate a series of TMS-protected alkyne precursors via scanning tunneling microscopy (STM) regarding their compatibility with organic molecular beam epitaxy (OMBE) and their potential deprotection on various coinage metal surfaces. After in-situ evaporation on the substrates held in UHV at room temperature, we find that all molecules arrived and adsorbed as intact units forming ordered supramolecular aggregates stabilized by non-covalent interactions. Thus, TMS-functionalized alkyne precursors with weights up to 1100 atomic mass units are stable against OMBE evaporation in UHV. Furthermore, the TMS activation through thermal annealing is investigated with STM and X-ray photoelectron spectroscopy (XPS). We observe that deprotection starts to occur between 400 K and 500 K on the copper and gold surfaces, respectively. In contrast, on silver surfaces, the TMS-alkyne bond remains stable up to temperatures where molecular desorption sets in (≈600 K). Hence, TMS functional groups can be utilized as leaving groups on copper and gold surfaces while they serve as protecting groups on silver surfaces.

Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

Study of the Interface in a GaP/Si Heterojunction Solar Cell

We have investigated the GaP/Si heterojunction interface for application in silicon heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin layers of GaP grown on Si by metal organic chemical vapor deposition and molecular beam epitaxy. The conduction band offset was determined to be 0.9 ± 0.2 eV, which is significantly higher than predicted by Anderson's rule (0.3 eV). XPS also revealed the presence of Ga–Si bonds at the interface that are likely to be the cause of the observed interface dipole. Via cross-sectional Kelvin probe force microscopy ( x -KPFM), we observed a charge transport barrier at the Si/GaP interface which is consistent with the high-conduction band offset determined by XPS and explains the low open-circuit voltage and low fill factor observed in GaP/Si heterojunction solar cells.

Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors

In this paper we have investigated dark current sources in high-operating temperature HgCdTe and InAsSb and barrier infrared detectors fabricated using metal organic chemical vapour deposition and molecular beam epitaxy, respectively. The bulk leakage and surface leakage components of the dark current were determined for unpassivated devices fabricated in a round mesa geometry and in different sizes, from 100 to 500 μm diameters. Results show that the surface leakage current depends on both the conductivity types of the active layers and the semiconductor surfaces. In the InAsSb detector the bulk component constitutes 100% of the total dark current flowing through the heterostructure. Since the absorber region has the same conductivity type in its bulk and at its surface, the unipolar barrier blocks the current in the bulk, and also blocks the current along the n-type surface of the device. For the HgCdTe detector, the bulk component constitutes about 50% of the total dark current density in the 200 μm device operating at 230 K and −0.1 V, whereas for the InAsSb detector this share is much higher and amounts to 98%. In the HgCdTe detector, the surface leakage current is attributed to the sidewall surfaces along the absorber, as well as depleted surface. In InAsSb, the surface states are pinned into the conduction band, thus the surface current is limited and comes mainly from the depleted area.

Controlled axial and radial growth of InP nanowires by metal–organic molecular beam epitaxy using the selective-area vapor–liquid–solid approach

Controlling the transition from axial to radial growth is essential for advanced III–V nanowire (NW) technology. Growth temperature and precursor flux affect this transition in a complicated manner. Here, we report on experiments designed to map the axial to radial growth transition of InP NWs prepared by the selective-area vapor–liquid–solid method during metal–organic molecular beam epitaxy. An optimized growth procedure for axial to radial switching was obtained, maintaining the pure wurtzite crystal phase of the NWs.

Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications

This paper presents the recent advances in semiconductor alloys for photovoltaic applications. The two main growth techniques involved in these compounds are metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), that has also been discussed. With these techniques, hetero-structures can be grown with a high efficiency. A combination of more than one semiconductor like GaAs, InGaAs and CuInGaAs increases the range of their electrical and optical properties. A large range of direct band gap, high optical absorption and emission coefficients make these materials optimally suitable for converting the light to electrical energy. Their electronic structures reveal that they are highly suitable for photovoltaic applications also because they exhibit spin orbit resonance and metal/semiconductor transitions. The dissociation energy has also been discussed in reference to the increased stability of these compounds.