Controlled axial and radial growth of InP nanowires by metal–organic molecular beam epitaxy using the selective-area vapor–liquid–solid approach

Abstract

Controlling the transition from axial to radial growth is essential for advanced III–V nanowire (NW) technology. Growth temperature and precursor flux affect this transition in a complicated manner. Here, we report on experiments designed to map the axial to radial growth transition of InP NWs prepared by the selective-area vapor–liquid–solid method during metal–organic molecular beam epitaxy. An optimized growth procedure for axial to radial switching was obtained, maintaining the pure wurtzite crystal phase of the NWs.