Performance Of Organic Field-effect Transistors Research Articles

Toward Ultrathin: Advances in Solution-Processed Organic Semiconductor Transistors.

In recent years, organic semiconductor (OSC) ultrathin films and their solution-processed organic field-effect transistors (OFETs) have garnered attention for their high flexibility, light weight, solution processability, and tunable optoelectronic properties. These features make them promising candidates for next-generation optoelectronic applications. An ultrathin film typically refers to a film thickness of less than 10 nm, i.e., several molecular layers, which poses challenges for OSC materials and solution-processed methods. In this paper, first we introduce the carrier-transport regulation mechanism under ultrathin limits. Second, we summarize various solution-processed techniques for OSC ultrathin films and elucidate advances in their OFETs performance, such as enhanced or maintained mobilities, improved switching ratios, reduced threshold voltages, and minimized contact resistance. The relationship between the ultrathin-film thickness, microstructure of various OSCs (small molecules and polymers), and device performance is discussed. Third, we explore the recent application of OSC ultrathin-film-based OFETs, such as gas sensors, biosensors, photodetectors, and ferroelectric OFETs (Fe-OFETs). Finally, the conclusion is drawn, and the challenges and prospects of ultrathin OSC transistors are presented. Nowadays, research on ultrathin films is still in its early stages; further experience in precise film deposition control is crucial to advancing research and broadening the scope of applications for OSC ultrathin devices.

High-Performance Organic Field-Effect Transistors and Inverters with Good Flexibility and Low Operating Voltage.

Organic field-effect transistors (OFETs) with good flexibility and low operating voltage, are of great meaning for the low power stretchable and wearable electronic devices. The operating voltage and flexibility are easily affected by the dielectric layers in the OFETs. Bilayer dielectrics comprising both high- and low-permittivity (k) insulating polymers, have been reported. The flexible bilayer dielectrics can combine the advantages of both insulating polymers, which are high charge carriers from low-k polymers and low operating voltage from high-k polymers. However, the effect of film thicknesses in the bilayer dielectrics on the OFET performance is seldom investigated. Here, bilayer dielectrics comprising high-k polyvinyl alcohol (PVA) and low-k polymethylmethacrylate (PMMA) were fabricated. And PVA/PMMA bilayers with three different PVA film thicknesses are carefully investigated. The 300 nm PVA/100 nm PMMA bilayer dielectric makes the pentacene OFETs show the highest hole mobility of 1.24 cm2V-1s-1 and the corresponding inverters give a high voltage gain of 40 and a noise margin of 2.3 V (77% of 1/2 VDD) at low operating voltage of 6 V. Both the pentacene transistors and the inverters still work properly under bending radium of 5.85 mm, proving the good prospects of the PVA/PMMA bilayer dielectric in practical applications.

Designing Contact Independent High-Performance Low-Cost Flexible Electronics.

Organic semiconductors enable low-cost solution processing of optoelectronic devices on flexible substrates. Their use in contemporary applications, however, is sparse due to persistent challenges in achieving the requisite performance levels in a reliable and reproducible manner. A critical bottleneck is the inefficiency associated with charge injection. Here, large-scale simulations are employed to identify operational windows where key device parameters that are difficult to control experimentally, such as the contact resistance, become less consequential to overall device functionality. This design methodology overcomes injection barrier limitations in organic field-effect transistors (OFETs), leading to high charge carrier mobility and significantly expanding the range of suitable electrode materials. Leveraging this new understanding, all-organic, solution-deposited OFETs are successfully fabricated on flexible substrates. These devices incorporate printed contacts and showcase mobilities exceeding 5cm2Vs-1. These results provide a route for accessing the fundamental limits of material properties even in the absence of ideal contacts - a critical step in establishing reliable structure/property relationships and optimal material design paradigms. While reducing the injection barrier and contact resistance remains critical for achieving high OFET performance, this work demonstrates a path toward consistently achieving high charge carrier mobility through device geometry design, ultimately reducing processing complexity and cost.

Functional Zwitterionic Polyurethanes as Gate Dielectrics for Organic Field‐Effect Transistors

AbstractThe development of polymeric dielectrics with a high dielectric constant is of great significance for flexible low‐voltage organic field‐effect transistors (OFETs). Herein, functional polyurethanes (PUs) with nitro and sulfobetaine zwitterionic groups are synthesized, and their electrical properties, mechanical properties, and the performances of OFET devices using these zwitterionic PUs as gate dielectrics are studied. Compared with sulfobetaine zwitterion‐containing PUs, nitro‐containing PUs (NO2‐PUs) show higher dielectric constant up to 6.5. Both zwitterionic PUs enhance the OFET performances, while the effect of NO2‐PU is more significant. Devices using NO2‐PU‐15 that contains 15 moL% nitro groups as the dielectric layer show the best performance and a threshold voltage (Vth) of as low as −0.02 V together with two orders’ increase of the mobility is observed, compared with the devices using PU without nitro groups. This study provides a new method to improve the dielectric constant of polymeric dielectrics, which is valuable for flexible/stretchable and wearable electronic devices.

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

The diketopyrrolopyrrole-based polymer (DPPT-TT) has been employed in organic power field effect transistors due to its exceptional off-state breakdown performance. The impact of organic semiconductor layer thickness on the breakdown performance has not been explored. In this study, we investigate the impact of DPPT-TT layer thickness on the breakdown voltage (BV) by fabricating organic field effect transistors (OFETs) with various DPPT-TT layer thicknesses. Our findings reveal that the devices' BV is a strong function of DPPT-TT layer thickness, and reducing the DPPT-TT layer thickness from 68 to 15 nm results in a decrease in BV from 291 to 86 V, attributed to the two-dimensional (2D) electric field crowding effect. An analytical model utilizing the 2D Poisson equation reveals an electric field at the DPPT-TT layer's surface. Thinner DPPT-TT layer exhibits larger electric field peak, leading to premature breakdown near the drain electrode. The relationship between breakdown electric field and DPPT-TT layer thickness was established by fitting the experimental data to the model, revealing an average BV error of only 8.8%. This phenomenon is validated to be ubiquitous in polymer based OFETs via DPPT-TT-based and P3HT-based devices. According to the proposed model, this 2D electric field crowding effect can be mitigated by adjusting the dielectric layer thickness (tD) and/or the dielectric material.

Low-voltage organic field-effect transistors by using solution-processable high-κ inorganic-polymer hybrid dielectrics

Organic field-effect transistors (OFETs) incorporating hybrid high-κ inorganic Al2O3 and polymer dielectrics, including polyvinyl alcohol (PVA), polystyrene (PS), or polymethyl methacrylate (PMMA), through solution-processing techniques were fabricated. The analyses revealed that the high surface energy and hydrophilicity property of Al2O3 and PVA, and the relatively hydrophobic property of PS surface, hindered the performance of corresponding OFETs. The Al2O3/PMMA-based OFET achieved the optimized performance, with a threshold voltage of −2.7 V, a hole carrier mobility of 0.056 cm2/Vs, and a current on/off ratio of 1.0 × 104 at a low operating voltage of −5 V. Through analyzing the characteristics of leakage current, capacitance, contact resistance, and trap density of OFETs, we found that the PMMA-engaged films possessed the optimized electrical properties. The introduction of PMMA eliminated the interfacial trapping, thereby lowering the threshold voltage and enhancing the performance of the device. The COMSOL Multiphysics simulation was conducted to confirm the physical mechanism. The strategy of utilizing Al2O3/PMMA hybrid dielectric could simultaneously ensure the low operating voltage and good performance of OFET, while guaranteeing the low leakage current by the thick PMMA.

Inkjet Printing of a Gate Insulator: Towards Fully Printable Organic Field Effect Transistor

In this work, a gate insulator poly (4-vinylphenol) (PVP) of an organic field effect transistor (OFET) was deposited using an inkjet printing technique, realized via a high printing resolution. Various parameters, including the molecular weight of PVP, printing direction, printing voltage, and drop frequency, were investigated to optimize OFET performance. Consequently, PVP with a smaller molecular weight of 11 k and a printing direction parallel to the channel, a printing voltage of 18 V, and a drop frequency of 10 kHz showed the best OFET performance. With a direct ink writing-printed organic semiconductor, this work paves the way for fully inkjet-printed OFETs.

Harnessing Compositional Gradients to Elucidate Phase Behaviors toward High Performance Polymer Semiconductor Blends.

Polymer semiconductor/insulator blends offer a promising avenue to achieve desired mechanical properties, environmental stability, and high device performance in organic field-effect transistors. A comprehensive understanding of process-structure-property relationships necessitates a thorough exploration of the composition space to identify transitions in performance, morphology, and phase behavior. Hence, this study employs a high-throughput gradient thin film library, enabling rapid and continuous screening of composition-morphology-device performance relationships in conjugated polymer blends. Applied to a donor-acceptor copolymer blend, this technique efficiently surveys a broad composition range, capturing trends in device performance across the gradient. Furthermore, characterizing the gradient library using microscopy and depth profiling techniques pinpointed composition-dependent transitions in morphology. To validate the results and gain deeper insights, uniform-composition experiments were conducted on select compositions within and outside the gradient range. Depth profiling experiments on the constant composition films unveil the presence of the semiconducting polymer at the air interface, with apparent enrichment of the semiconductor at the substrate interface at low ratios of the semiconducting component, transitioning to a more even distribution within the bulk of the film at higher ratios. The generalizability of the gradient approach was further confirmed by its application to a homopolymer under different solution processing conditions.

Low voltage flexible high performance organic field-effect transistor and its application for ultraviolet light detectors

ABSTRACT A novel highly π-extended heteroarene Benzo[1,2-b:4,5-b’]di(naphtho[1,2-d]thiophene) (DBTBT) was used for organic field-effect transistors (OFETs). The mobilities of OFET were greatly improved from 0.34–0.58 cm2V−1s−1 to 1.02–1.75 cm2V−1s−1 by morphology tuning through 2 steps’ controlling substrate temperature. More importantly, the OFETs showed a good ambient stability in 30 days measurements. The flexible OFET arrays were prepared on polyethylene terephthalate substrate with octadecyl trichlorosilane modified polymethylsilsesquioxane/polyacrylonitrile gate dielectrics and demonstrated a 100% yield. Further, this flexible cell was used for ultraviolet light detection, which showed good ability of detecting low power light (such as λ = 254 nm, 7 μW/cm2).

Evaluating the performance of p-type organic field-effect transistor using different source–drain electrodes

Evaluating the performance of p-type organic field-effect transistor using different source–drain electrodes

Detailed Investigation of Plasticized PMMA Dielectric for Improved Performance of Organic Field-Effect Transistors

Detailed Investigation of Plasticized PMMA Dielectric for Improved Performance of Organic Field-Effect Transistors

Enhanced N-type Semiconducting Performance of Asymmetric Monochlorinated Isoindigo-based Semiregioregular Polymers under Dynamic Forces.

The asymmetric monochlorination strategy not only effectively addresses the steric issues in conventional dichlorination but also enables the development of promising acceptor units and semiregioregular polymers. Herein, monochlorinated isoindigo (1CIID) is successfully designed and synthesized by selectively introducing single chlorine (Cl) atoms. Furthermore, the 1CIID copolymerizes with two donor counterparts, centrosymmetric 2,2'-bithiophene (2T) and axisymmetric 4,7-di(thiophen-2-yl)benzo[1,2,5]thiadiazole (DTBT), forming two polymers, P1CIID-2T and P1CIID-DTBT. These polymers exhibit notable differences in backbone linearity and dipole moments, influenced by the symmetry of their donor counterparts. In particular, P1CIID-2T, which contains a centrosymmetric 2T unit, demonstrates a linear backbone and a significant dipole moment of 10.20 D. These properties contribute to the favorable film morphology of P1CIID-2T, characterized by highly ordered crystallinity in the presence of fifth-order (500) X-ray diffraction peaks. Notably, P1CIID-2T exhibits a significant improvement in molecular alignment under dynamic force, resulting in over 8-fold improvement in the performance of organic field-effect transistor (OFET) devices, with superior electron mobility up to 1.22 cm2 V-1 s-1. This study represents the first synthesis of asymmetric monochlorinated isoindigo-based conjugated polymers, highlighting the potential of asymmetric monochlorination for developing n-type semiconducting polymers. Moreover, our findings provide valuable insights into the relationship between the molecular structure and properties.

Pyrazinoquinoxaline derivatives for flexible electronic devices: effect of the mechanical properties of the crystals on device durability.

Understanding the interplay between the molecular structure and material properties of emerging p-type organic semiconductors marks a significant stride in the advancement of molecular electronics. Among the array of promising materials, mechanically flexible single crystals of π-conjugated molecules stand out due to their potential for cutting-edge applications in organic electronics. Notably, derivatives of pyrazinoquinoxaline (PQ) are recognized as versatile building blocks for constructing π-conjugated systems, showcasing good semiconductor performance in organic field-effect transistors (OFETs). In this study, we present an exploration into the p-type charge transport and mechanical characteristics of two newly synthesized PQ derivatives: 5,10-diphenyl-2,3,7,8-tetra(thiophen-2-yl)pyrazino[2,3-g]quinoxaline (DPTTQ) and 2,3,5,7,8,10-hexa(thiophen-2-yl)pyrazino[2,3-g]quinoxaline (HTPQ). HTPQ crystals exhibit flexural behaviour under applied stress, effortlessly returning to their initial configuration upon relaxation. Conversely, two polymorphic forms of DPTTQ crystals display brittle fracture when subjected to a similar stress. Specifically, DPTTQ molecules adopt a β-sheet packing, while HTPQ presents a γ-packing with a corrugated arrangement. Field-effect charge transport measurements reveal p-type charge transport in both DPTTQ and HTPQ, with HTPQ showcasing hole mobility up to 0.01 cm2 V-1 s-1, while DPTTQ exhibits mobility that is at least one order of magnitude lower. This variance in the field effect mobility can be directly correlated to the difference in crystal packing, highlighting a clear structure-property correlation. Moreover, taking advantage of the flexural nature of the HTPQ crystals, we fabricated durable electronic devices, which retain their conductivity for over 60 cycles of strain, indicating the efficacy of our chemical design in demonstrating high-performance flexible devices. These findings underscore the promise of semiconducting organics with γ-packing for achieving both better mobility and elasticity for integration into organic electronic devices.

Hole Mobility Enhancement in Benzo[1,2-b:4,5-b']Dithiophene-Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid-State Electrolyte Gating.

Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite-based electronics. Particularly, the charge carrier mobility of conjugatedpolymer semiconductors has been deemed to be a vital figure-of-merit for achieving high-performance organic field-effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer in perovskite-functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA)gate dielectric, improvements in hole mobility of 0.019cm2V-1s-1 are measured using an off-center spin-coating technique, which exceeds those of on-center counterparts (0.22 ± 0.07 × 10-2cm2V-1s-1). Furthermore, the mobility drastically increases by adopting solid-state electrolyte gating, corresponding to 2.99 ± 1.03cm2V-1s-1 for the control, and the best hole mobility is 8.03cm2V-1s-1 (average ≈ 6.94 ± 0.59cm2V-1s-1) for perovskite-functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite-functionalized organic transistor channel, resulting from the high-capacitance electrolyte dielectric.

Solution-processable quinoidal compounds containing heterocycle for air-stable n‑type organic field-effect transistors and gas sensors

Organic field effect transistors (OFETs) have potential applications in gas sensing area, but the performance and diversity of n-type OFETs are still far behind that of p-type OFETs due to the poor stability in air atmosphere. Herein, a series of novel dicyanomethylene-terminated quinoids compounds were synthesized and characterized by using electron withdrawing aromatic heterocycles as the core structural units. The introduction of alkyl branch chain greatly improves the solubility, which is helpful to the preparation of thin film OFETs devices by low-cost solution method. These OFETs show typical n-channel FET characteristics with mobility ranging from 10−3∼10−1 cm2V−1s−1. Among them, the 3-T-TZCN based OFETs exhibit the best stability, in which the mobility decreased no more than 18 % after 90 days stored in air atmosphere, this is an outstanding performance compared with the previous researches. We further investigated the dimethyl methylphosphonate (DMMP, which is a substitute for detecting sarin) gas sensing performance of each material, the experimental results indicated that the sensitivity, recovery and stability of 3-T-TZCN are better than other materials, and the limit of detection can be lower to 10 ppb level. This general approach could offer new solution for constructing n-type OFET-based gas sensors with good stability in air atmosphere.

Diselenophene-Dithioalkylthiophene Based Quinoidal Small Molecules for Ambipolar Organic Field Effect Transistors.

This work presents a series of novel quinoidal organic semiconductors based on diselenophene-dithioalkylthiophene (DSpDST) conjugated cores with various side-chain lengths (-thiohexyl, -thiodecyl, and -thiotetradecyl, designated DSpDSTQ-6, DSpDSTQ-10, and DSpDSTQ-14, respectively). The purpose of this research is to develop solution-processable organic semiconductors using dicyanomethylene end-capped organic small molecules for organic field effect transistors (OFETs) application. The physical, electrochemical, and electrical properties of these new DSpDSTQs are systematically studied, along with their performance in OFETs and thin film morphologies. Additionally, the molecular structures of DSpDSTQ are determined through density functional theory (DFT) calculations and single-crystal X-ray diffraction analysis. The results reveal the presence of intramolecular S (alkyl)···Se (selenophene) interactions, which result in a planar SR-containing DSpDSTQ core, thereby promoting extended π-orbital interactions and efficient charge transport in the OFETs. Moreover, the influence of thioalkyl side chain length on surface morphologies and microstructures is investigated. Remarkably, the compound with the shortest thioalkyl chain, DSpDSTQ-6, demonstrates ambipolar carrier transport with the highest electron and hole mobilities of 0.334 and 0.463 cm2 V-1 s-1 , respectively. These findings highlight the excellence of ambipolar characteristics of solution-processable OFETs based on DSpDSTQs even under ambient conditions.

Advancing organic electronics: Achieving reliable synthesis of conjugated polymers with various carrier polarities using a continuous flow reactor

Donor-acceptor (D-A) conjugated polymers often exhibit excellent performance in electronic and photonic applications, however, their synthesis remains a hurdle to achieving their wide-spread commercialization. While scalable and reproducible flow syntheses have emerged as promising candidates to address this issue, they have only been applied to a narrow scope of polymer types. In this study, we explore the synthesis of six different D-A conjugated polymers in a continuous flow reactor to determine how reaction and polymer parameters influence the degree of polymerization (DP) and quality of the resulting polymers. We found that we could successfully synthesize p-type, n-type, and ambipolar D-A conjugated polymers with a single set of reaction parameters. Only the reaction time required optimization to achieve high-DPs. Importantly, we found that we could achieve comparable DPs to batch reactions, but with higher yields and much shorter reaction times. High-quality polymers were also obtained, which was confirmed with optical and electrochemical properties measurements and by their performance in organic field-effect transistors. We expect this work to further establish flow synthesis as an ideal method to make D-A conjugated polymers, which may help facilitate their commercialization in high-performing organic devices.

Towards sustainable, solution-processed organic field-effect transistors using cashew gum as the gate dielectric

To realize low-cost, environmentally friendly electronic devices and circuits, there is currently a strong trend to explore plant-based dielectric materials because they can be responsibly sourced from agricultural or forest vegetation, are generally water-soluble, and possess good electrical insulator properties. In this contribution, organic field-effect transistors (OFETs) using a biopolymer dielectric obtained from exudates of Anacardium occidentale Linn. trees, namely, cashew gum (CG), are reported. To characterise the physical and dielectric properties of the gum, thin films and metal-insulator-metal (MIM) capacitors were prepared and characterized. To evaluate the material’s performance in OFETs, bottom-gate top-contact (BGTC) p-channel poly [3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo (3,4-c)pyrrole-1,4-dione) thieno (3,2-b) thiophene]:polymethyl methacrylate (DPPTTT:PMMA) transistors were engineered and studied. The fabricated MIM capacitors display a comparatively high areal capacitance of 260 nF/cm2 at 1 kHz for 130 nm thick films. As a result, the solution-processed DPPTTT:PMMA OFETs favourably operate at 3 V with the average saturation field-effect mobility equal to 0.20 cm2/Vs., threshold voltage around −1.4 V, subthreshold swing in the region of 250 mV/dec, and ON/OFF current ratio well above 103. As such, cashew gum emerges as a promising dielectric for sustainable manufacturing of solution-processed organic FETs.

Enhancing Gating Performance in Organic Molecular Field-Effect Transistors by Introducing Polar Azulene Components.

Organic molecular field-effect transistors (FETs) are promising building components for future electronic circuits. Efficient control of charge transport properties is one key issue in the design of organic molecular FETs. In this study, we propose a redesign of a naphthalene-based FET by introducing two azulene components in opposite dipole moment directions. Using density functional theory combined with non-equilibrium Green's function, the simulated electronic transport characteristics reveal that the introduction of polar azulene components effectively narrows the frontier molecular orbitals gap, leading to an increase in the ON-state current. Meanwhile, the OFF-state current is significantly suppressed by highly localizing the dominant electronic transport channel. As a result, improved gate controllability is achieved with a higher ON-OFF current ratio, which is nearly seven times higher than that of the naphthalene-based FET device. These findings provide theoretical directions for future design of organic molecular FET devices with enhanced gating regulation efficiency.

Molecular Design Concept for Enhancement Charge Carrier Mobility in OFETs: A Review.

In the last two decades, organic field-effect transistors (OFETs) have garnered increasing attention from the scientific and industrial communities. The performance of OFETs can be evaluated based on three factors: the charge transport mobility (μ), threshold voltage (Vth), and current on/off ratio (Ion/off). To enhance μ, numerous studies have concentrated on optimizing charge transport within the semiconductor layer. These efforts include: (i) extending π-conjugation, enhancing molecular planarity, and optimizing donor-acceptor structures to improve charge transport within individual molecules; and (ii) promoting strong aggregation, achieving well-ordered structures, and reducing molecular distances to enhance charge transport between molecules. In order to obtain a high charge transport mobility, the charge injection from the electrodes into the semiconductor layer is also important. Since a suitable frontier molecular orbitals' level could align with the work function of the electrodes, in turn forming an Ohmic contact at the interface. OFETs are classified into p-type (hole transport), n-type (electron transport), and ambipolar-type (both hole and electron transport) based on their charge transport characteristics. As of now, the majority of reported conjugated materials are of the p-type semiconductor category, with research on n-type or ambipolar conjugated materials lagging significantly behind. This review introduces the molecular design concept for enhancing charge carrier mobility, addressing both within the semiconductor layer and charge injection aspects. Additionally, the process of designing or converting the semiconductor type is summarized. Lastly, this review discusses potential trends in evolution and challenges and provides an outlook; the ultimate objective is to outline a theoretical framework for designing high-performance organic semiconductors that can advance the development of OFET applications.