Organic Field-effect Transistors Devices Research Articles

Benzodipyrrolidone-based donor-acceptor semiconducting polymers with high hole mobility and noncovalent conformational locks

Constructing highly coplanar polymer backbone plays an important role in boosting the carrier mobility of organic field effect transistors (OFETs) devices. In this study, based on noncovalent conformational locks strategy, we synthesized the electron-acceptor (A) monomer via introducing 3-dodecylthiophene on strong electron-deficient planar benzodipyrrolidone and the electron-donor (D) monomers containing different numbers (0–2) of fluorine atoms at different positon. A series of novel D-A copolymers, namely PBDP-F0, PBDP-F1 and PBDP-F2 with different backbone conformational locks through F⋯S and F⋯H–C noncovalent interactions, were obtained via Stille polycondensation. For the application in an organic field-effect transistor, all the polymers exhibited p-type charge transport characteristics and good performance with the highest hole mobilities as 0.24 cm2 V−1 s−1 for PBDP-F0, 0.87 cm2 V−1 s−1 for PBDP-F1 and 1.93 cm2 V−1 s−1 for PBDP-F2, respectively. AFM and GIXRD investigations indicated that all polymers take predominantly edge-on orientation packing mode because of the rigid and coplanar backbone conformation and the annealing films exhibited small π-π stacking distances of 3.73, 3.71 and 3.69 Å for PBDP-F0, PBDP-F1 and PBDP-F2 respectively. This work demonstrates that modified BDP-based D-A copolymers with conformational locks has a potential application in the high-performance semiconductor materials.

Distribution of Density of States in Organic Field–Effect Transistors Based on Polymer Dielectrics

AbstractThe distribution of density of states (DOS) holds fundamental importance in determining charge transport within organic field–effect transistors (OFETs). Herein, the modulation of DOS distribution in OFET devices is demonstrated by altering the chain conformation of the polymer dielectrics. A rapid film‐formation technique, specifically the spin‐casting method, is used to fabricate the dielectric layer using poly(methyl methacrylate) (PMMA). This method allows for the retention of some memory of the chain conformations from the solution to the resulting dry film. This memory effect is employed to prepare thin PMMA films with different local chain conformations by adjusting the quality of the solvent. Good solvent forms solidified films with a reduced amount of gauche conformer in the PMMA chain, resulting in a narrow DOS distribution width. Consequently, the device exhibited enhanced charge mobility and a reduced subthreshold swing. The observed change in the width of the DOS distribution can be attributed to the alteration of the local energy state of the semiconductor, induced by the local chain conformation of PMMA dielectrics through electrostatics and steric interactions.

Accurate Description of Coulombic Interactions in Organic Field‐Effect Transistors Enabled by Efficient 3D Poisson's Equation Solver with Mixed Boundary Conditions

Accurate Description of Coulombic Interactions in Organic Field‐Effect Transistors Enabled by Efficient 3D Poisson's Equation Solver with Mixed Boundary Conditions

Nature of Ohmic and Schottky contacts on pentacene-based organic field-effect transistor

Organic field-effect transistors (OFETs) have become promising components for a wide range of applications in the fast-growing field of organic electronics. Nevertheless, with the increasing need for high-performance OFETs, it is crucial to understand and challenge the contact resistance in these devices, because it represents a critical bottleneck that can significantly suppress the overall performance. Herein, we report the evaluation of the voltage dependence of the injection barrier in pentacene-based OFET devices with Au or Ag electrodes. The injection barrier of the device with Au electrodes showed an Ohmic nature with a barrier of approximately 170 ∼ 200 meV, whereas the barrier in the device with Ag electrodes behaved as a Schottky contact and the zero-field injection barrier reached 552 ± 2 meV.

Enhanced N-type Semiconducting Performance of Asymmetric Monochlorinated Isoindigo-based Semiregioregular Polymers under Dynamic Forces.

The asymmetric monochlorination strategy not only effectively addresses the steric issues in conventional dichlorination but also enables the development of promising acceptor units and semiregioregular polymers. Herein, monochlorinated isoindigo (1CIID) is successfully designed and synthesized by selectively introducing single chlorine (Cl) atoms. Furthermore, the 1CIID copolymerizes with two donor counterparts, centrosymmetric 2,2'-bithiophene (2T) and axisymmetric 4,7-di(thiophen-2-yl)benzo[1,2,5]thiadiazole (DTBT), forming two polymers, P1CIID-2T and P1CIID-DTBT. These polymers exhibit notable differences in backbone linearity and dipole moments, influenced by the symmetry of their donor counterparts. In particular, P1CIID-2T, which contains a centrosymmetric 2T unit, demonstrates a linear backbone and a significant dipole moment of 10.20 D. These properties contribute to the favorable film morphology of P1CIID-2T, characterized by highly ordered crystallinity in the presence of fifth-order (500) X-ray diffraction peaks. Notably, P1CIID-2T exhibits a significant improvement in molecular alignment under dynamic force, resulting in over 8-fold improvement in the performance of organic field-effect transistor (OFET) devices, with superior electron mobility up to 1.22 cm2 V-1 s-1. This study represents the first synthesis of asymmetric monochlorinated isoindigo-based conjugated polymers, highlighting the potential of asymmetric monochlorination for developing n-type semiconducting polymers. Moreover, our findings provide valuable insights into the relationship between the molecular structure and properties.

Highly crystalline and fluorescent BODIPY-labelled phenyl-triazole-coumarins as n-type semiconducting materials for OFET devices

In this work, the synthesis of BODIPY-phenyl-triazole labelled coumarins (BPhTCs) using a two-step approach is described. The influence of the BODIPY appending on the photophysical, electrochemical and thermal properties of the phenyl-triazole-coumarin precursors (PhTCs) was investigated. Band gap energies were measured by absorption spectroscopy (2.20 ± 0.02 eV in the solid and 2.35 ± 0.01 eV in solution) and cyclic voltammetry (2.10 ± 0.05 eV). The results are supported by DFT calculations confirming the presence of lowest LUMO levels that facilitate the electron injection and stabilize the electron transport. Their charge-transport parameters were measured in Organic Field-Effect Transistor (OFET) devices. BPhTCs showed an ambipolar transistor behavior with good n-type charge mobilities (10−2 cm2V−1s−1) allowing these derivatives to be employed as promising semiconducting crystalline and fluorescent materials with good thermal and air stability up to 250 °C.

Synergetic effect of microfluidic flow and ultrasonication on chains pre-ordering in conjugated polymer solution

Multi-physical fields solution processing strategy provides a universal and facile way to prepare various conjugated polymer (CP) films and high-performance devices, whereas the hierarchical structures evolution and crystallization of the polymer chains are elusive particularly under the far-from-equilibrium state in solution. In this work, we employed a combined microfluidic flow and ultrasonication strategy (FU) for CP solution processing and found a pronounced synergetic effect of these fields in promoting the pre-ordering of chains in solution. This conformation order and anisotropy of the solution were revealed by using UV–Vis absorption, polarized optical microscopy (POM) and cryogenic transmission electron microscopy (Cryo-TEM) characterizations. A non-classical nucleation model for the conjugated polymer crystallization in the procedure of non-equilibrium solution processing was confirmed. The roles of microfluidic flow and ultrasonication on the chain aggregation and crystallization were addressed with the aim of a multi-physical simulation based on pressure acoustics streaming, fluid heat transfer and thermoviscous boundary layer impedance. Compared to pristine solutions, the FU strategy showed improved solution anisotropy and crystallization kinetics, substantially giving rise to a larger crystallinity in films and much increased mobilities for the organic field-effect transistor (OFET) devices by more than an order of magnitude. With an appropriate balance between the solvation and interchain interactions, the FU processing strategy is universal for regulation of chains conformation and aggregation in conjugated polymer solution.

Dissecting the Interplay between Organic Charge-Modulated Field-Effect Transistors and Field-Effect Transistors through Interface Control Engineering.

Organic charge-modulated field-effect transistors (OCMFETs) have garnered significant interest as sensing platforms for diverse applications that include biomaterials and chemical sensors owing to their distinct operational principles. This study aims to improve the understanding of driving mechanisms in OCMFETs and optimize their device performance by investigating the correlation between organic field-effect transistors (OFETs) and OCMFETs. By introducing self-assembled monolayers (SAMs) with different functional groups on the AlOx gate dielectric surface, we explored the impact of the surface characteristics on the electrical behavior of both devices. Our results indicate that the dipole moment of the dielectric surface is a critical control variable in the performance correlation between OFET and OCMFET devices, as it directly impacts the generation of the induced floating gate voltage through the control gate voltage. The insights obtained from this study contribute to the understanding of the factors affecting OCMFET performance and emphasize their potential as platforms for diverse sensing systems.

Spin-Distribution-Directed Regioselective Substitution Strategy for Highly Stable Olympicenyl Radicals.

The synthesis of bench-stable conjugated π-radicals is challenging owing to the lack of modular approaches, which greatly hampers their practical material screens and applications. Here, we demonstrate a spin-distribution-directed regioselective substitution strategy to introduce substituents into the specific positions of an olympicenyl radical in a stepwise manner, resulting in a series of highly stable radical species. The substituents can also adjust the crystal packing by means of steric and electronic factors, enabling the changing from a π-dimer to a pseudo-one-dimensional chain. The first single crystal organic field-effect transistor device based on a graphenic radical is fabricated in air, showing a hole mobility of up to 0.021 cm2 V-1 s-1 and excellent device stability. This approach may be generalized to diverse spin-delocalized open-shell organic radicals.

Donor-Acceptor-Based Organic Polymer Semiconductor Materials to Achieve High Hole Mobility in Organic Field-Effect Transistors.

Organic polymer semiconductor materials are conveniently tuned to energy levels because of their good chemically modifiable properties, thus enhancing their carrier transport capabilities. Here, we have designed and prepared a polymer with a donor-acceptor structure and tested its potential as a p-type material for organic field-effect transistor (OFET) applications using a solution-processing method. The conjugated polymers, obtained via the polymerization of the two monomers relying on the Stille coupling reaction, possess extremely high molecular weights and thermodynamic stability. Theoretical-based calculations show that PDPP-2S-Se has superior planarity, which is favorable for carrier transport within the main chain. Photophysical and electrochemical measurements systematically investigated the properties of the material and the energy levels with respect to the theoretical values. The maximum hole mobility of the PDPP-2S-Se-based OFET device is 0.59 cm2 V-1 s-1, which makes it a useful material for potential organic electronics applications.

Exploration of a Cellulose-Based Biocompatible Gate Dielectric for Low-Voltage Organic Transistors

In this work, a cellulose-based biocompatible high-k dielectric cyanoethyl cellulose (CEC) is comprehensively explored for demonstration of low-voltage organic transistors. The organic field-effect transistor (OFET) devices fabricated using a blend of TIPS-Pentacene and polystyrene to create the active semiconductor layer exhibited excellent p-channel transistor behavior with maximum and average process transconductance values of ~ 9.0, and ~ 6.0 nF/V.s respectively, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> / <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> , and average threshold voltage of -0.4 (±0.1) V suitable for sub-5V operation. Moreover, very high electrical stability was achieved from these devices through bias-stress, and repeatability measurements. The device operation was still maintained after 6 months in normal ambient indicating a high shelf life. Finally, there was a minimal variation in performance upon annealing the devices up to 60 °C, indicating high reliability in harsh environmental operating conditions. Our results confirm that CEC can be a potential gate dielectric for organic and biodegradable electronics which is essential for sustainability.

Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics

The Organic field-effect transistors (OFETs) have been largely investigated due to their low-cost manufacturing, flexibility, and lightweight, as well as their optical and electrical characteristics. That allow its application in sensors, amplifiers, attenuators signal filtering, and high-frequency response devices, like biosensing, wearable electronics, optoelectronics, telecommunications, and other potential applications. Throughout this investigation, a ClInPc flexible OFET with Al2O3 embedded particles in nylon 11, was manufactured and characterized to evaluate the optoelectronic and morphological properties. For the manufacturing, a high-vacuum thermal evaporation deposition technique was used, and UV-vis spectroscopy analysis and scanning electron microscopy were conducted to evaluate the optoelectronic and morphological properties. Also, a study regarding the electrical characteristics for different time-dependent wavefunction input signals, changing the input voltage and frequency, has been conducted. The latter was driven to determine the time-response characteristics, gains, phase shift and to determine whether the device function as an attenuator or an amplifier with the selected configuration. The device has been modelled to obtain the OFET operation parameters. A resulting capacitance of 567 pF was calculated. Uniform and continuous films where obtained, which guarantees an efficient charge transport. For all signals the output voltage is lower than that of the input voltage. Also, for the higher frequency the output voltage is decreased compared to lower frequencies. Gains decreasing variation of up to 0.05 indicate the operating application as an attenuator. Phase variation of up to 100 °, resulted while varying the input frequency. The model resulted on a gate capacitance value between 500 and 1180 pF, and gate-drain capacitance value between 50 and 500 pF. All of this could give evidence that state of the art ClInPc flexible OFET device with Al2O3 embedded nanoparticles in nylon 11 could be used toward current high-performance frequency-dependent flexible applications.

Solution-Processable Indenofluorenes on Polymer Brush Interlayer: Remarkable N-Channel Field-Effect Transistor Characteristics under Ambient Conditions.

The development of solution-processable n-type molecular semiconductors that exhibit high electron mobility (μe ≥ 0.5 cm2/(V·s)) under ambient conditions, along with high current modulation (Ion/Ioff ≥ 106-107) and near-zero turn on voltage (Von) characteristics, has lagged behind that of other semiconductors in organic field-effect transistors (OFETs). Here, we report the design, synthesis, physicochemical and optoelectronic characterizations, and OFET performances of a library of solution-processable, low-LUMO (-4.20 eV) 2,2'-(2,8-bis(3-alkylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile small molecules, β,β'-Cn-TIFDMTs, having varied alkyl chain lengths (n = 8, 12, 16). An intriguing correlation is identified between the solid-isotropic liquid transition enthalpies and the solubilities, indicating that cohesive energetics, which are tuned by alkyl chains, play a pivotal role in determining solubility. The semiconductors were spin-coated under ambient conditions on densely packed (grafting densities of 0.19-0.45 chains/nm2) ultrathin (∼3.6-6.6 nm) polystyrene-brush surfaces. It is demonstrated that, on this polymer interlayer, thermally induced dispersive interactions occurring over a large number of methylene units between flexible alkyl chains (i.e., zipper effect) are critical to achieve a favorable thin-film crystallization with a proper microstructure and morphology for efficient charge transport. While C8 and C16 chains show a minimal zipper effect upon thermal annealing, C12 chains undergo an extended interdigitation involving ∼6 methylene units. This results in the formation of large crystallites having lamellar stacking ((100) coherence length ∼30 nm) in the out-of-plane direction and highly favorable in-plane π-interactions in a slipped-stacked arrangement. Uninterrupted microstructural integrity (i.e., no face-on (010)-oriented crystallites) was found to be critical to achieving high mobilities. The excellent crystallinity of the C12-substituted semiconductor thin film was also evident in the observed crystal lattice vibrations (phonons) at 58 cm-1 in low-frequency Raman scattering. Two-dimensional micrometer-sized (∼1-3 μm), sharp-edged plate-like grains lying parallel with the substrate plane were observed. OFETs fabricated by the current small molecules showed excellent n-channel behavior in ambient with μe values reaching ∼0.9 cm2/(V·s), Ion/Ioff ∼ 107-108, and Von ≈ 0 V. Our study not only demonstrates one of the highest performing n-channel OFET devices reported under ambient conditions via solution processing but also elucidates significant relationships among chemical structures, molecular properties, self-assembly from solution into a thin film, and semiconducting thin-film properties. The design rationales presented herein may open up new avenues for the development of high-electron-mobility novel electron-deficient indenofluorene and short-axis substituted donor-acceptor π-architectures via alkyl chain engineering and interface engineering.

Synergistic Use of All-Acceptor Strategies for the Preparation of an Organic Semiconductor and the Realization of High Electron Transport Properties in Organic Field-Effect Transistors.

The development of n-type organic semiconductor materials for transporting electrons as part of logic circuits is equally important to the development of p-type materials for transporting holes. Currently, progress in research on n-type materials is relatively backward, and the number of polymers with high electron mobility is limited. As the core component of the organic field-effect transistor (OFET), the rational design and judicious selection of the structure of organic semiconductor materials are crucial to enhance the performance of devices. A novel conjugated copolymer with an all-acceptor structure was synthesized based on an effective chemical structure modification and design strategy. PDPPTT-2Tz was obtained by the Stille coupling of the DPPTT monomer with 2Tz-SnMe3, which features high molecular weight and thermal stability. The low-lying lowest unoccupied molecular orbital (LUMO) energy level of the copolymer was attributed to the introduction of electron-deficient bithiazole. DFT calculations revealed that this material is highly planar. The effect of modulation from a donor-acceptor to acceptor-acceptor structure on the improvement of electron mobility was significant, which showed a maximum value of 1.29 cm2 V-1 s-1 and an average value of 0.81 cm2 V-1 s-1 for electron mobility in BGBC-based OFET devices. Our results demonstrate that DPP-based polymers can be used not only as excellent p-type materials but also as promising n-type materials.

Solution-Processable Benzo[b]thieno[2,3-d]thiophene Derivatives as Organic Semiconductors for Organic Thin-Film Transistors

Two new benzo[b]thieno[2,3-d]thiophene (BTT) derivatives, 2-(benzo[b]thiophen-5-yl)benzo[b]thieno[2,3-d]thiophene (compound 2), and 2-(benzo[b]thieno[2,3-d]thiophene-2yl)dibenzo[b,d]thiophene (compound 3) have been synthesized and utilized as solution-processable small molecular organic semiconductors for organic field-effect transistors (OFETs). The physicochemical characteristics of the recently created substances were analyzed using thermogravimetric analysis (TGA), differential scanning calorimeter (DSC), and UV-vis spectroscopy. Subsequently, the above-mentioned substances were employed as semiconductor layers in bottom-gate/top-contact OFETs through solution shearing methods for device fabrication, and their electrical performances were meticulously evaluated. The outcoming OFET device displayed p-channel behavior, demonstrating hole mobility of up to 0.005cm2/Vs and a current on/off ratio higher than 106.

Highly Sensitive and Selective Room Temperature-Operated NO2 Sensor Based on Eco-Friendly Water Processed Low Voltage Operable OFET

We report a highly sensitive and selective room temperature (RT) operated nitrogen dioxide (NO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}$ </tex-math></inline-formula> Gas Sensor based on Low voltage Operable poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5di(thien-2-yl)thieno [3,2-b]-thiophene)] (DPP-DTT) based organic field effect transistors (OFETs). We have used water-induced aluminum oxide (AlO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{x}{)}$ </tex-math></inline-formula> as gate dielectric and the floating film transfer method (FTM) using water as a liquid substrate to lift the self-assembled film of DPP-DTT. The fabricated OFET devices were operated at a low voltage of −3 V. The device was tested for low-voltage Gas sensing applications. The DPP-DTT OFETs-based Gas sensor showed a response of 2217.4% for 200 ppb and 8445.5% for 1.4 ppm of NO2, respectively at (RT, 25 °C) and relative humidity (RH) of 55%. The respective percentage changes in mobility and threshold voltage were 1210.81 and 121.92 for 1.4 ppm of NO2. The DPP-DTT-based NO2 sensor recorded a response and recovery time of 34 and 168 s for 1.4 ppm NO2. The maximum temperature in the whole fabrication process was not more than 260 °C. A selective study with SO2, NH3, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{H}_{{2}}\text{S}$ </tex-math></inline-formula> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{H}_{{2}}$ </tex-math></inline-formula> , and CO2 was also done which establishes the high selectivity of the sensor for NO2. This report combines the benefits of the eco-friendly processing technique for AlOx dielectric, floating film transfer from water substrate instead of commonly used toxic ethylene glycol, and superior gas sensing properties of FTM film.

Analytic models for organic field-effect transistors based on exponential and power mobility models

The fundamental I–V formula of an organic field effect transistor (OFET) is improved to overcome the divergence of the integrand, so it is very convenient for both numerical calculations and analytic derivations. The analytic I–V formulae are derived based on the exponential mobility model and power-function mobility model, respectively, and the derived analytic formulae are applied to three OFET devices. The results calculated from the reformulated analytic I–V formulae taking in exponential and power function mobility models are all in good agreement with the experimental I–V data. The parameters μ 0 and γ that are extracted from the mobility model and fitted by experimental data show simple Arrhenius temperature dependence and inverse linear relationship with temperature, respectively. These findings are very useful for practical applications and device simulations.

Theoretical design of Au–DPPh–Au molecular junction for use in organic field-effect transistors

The electron transport properties of a newly designed model based on the molecular junction of 2,2′,6,6′-tetraphenyl-dipyranylidene (DPPh) between two Au electrodes were investigated. Density functional theory was applied in combination with the non-equilibrium Green's function method. In addition, scanning tunneling microscopy images and rectification ratio were analyzed to show the charge density intensity within the asymmetric and nonlinear behaviors of current (I) at applied voltages (V). The electronic properties, transmission coefficient, and I–V characteristics of the Au–DPPh–Au model along the z-axis are more favorable than that of the model along the y-axis. The different analyses showed that the Au–DPPh–Au model along the z-axis is a suitable molecular junction for use in organic field-effect transistor devices.

Aza-anthradithiophene-based conjugated polymers: Synthesis and field-effect transistor application

Acenedithiophenes are classical fused-ring units for constructing conjugated polymers. In this work, a new aza-anthradithiophene unit has been designed and was for the first time employed as building unit to constructing conjugated polymers for organic field-effect transistors. Two conjugated polymers based on thiophthene (P1) and benzothiadiazole (P2) as co-units were synthesized by Stille and Suzuki coupling reactions, respectively. The thermal stability, optical and electrochemical properties, and microstructure were investigated. Organic field-effect transistor devices based on conjugated polymers as semiconductor layer were also fabricated and two polymers exhibited typical hole transport characteristics with the average field-effect mobility up to 7.9 × 10−4 cm2V−1s−1 and Ion/Ioff ratios over 104.

Synthesis and electrical characterization of poly[(linoleic acid)‐g‐(styrene)‐g‐(ε‐caprolactone)] graft copolymers as gate insulator for OFET devices

AbstractThis study reports a one‐pot process used to synthesize poly[(linoleic acid)‐g‐(styrene)‐g‐(ε‐caprolactone)] (PLina‐g‐PSt‐g‐PCL) graft copolymers. The process was carried out by combining the atom transfer radical polymerization of styrene with the ring‐opening polymerization of ε‐caprolactone from polymeric linoleic acid having hydroxyl groups and bromine groups in the main chain. The characterization of the products was achieved using proton nuclear magnetic resonance, size‐exclusion chromatography, Fourier transform infrared spectroscopy, thermogravimetric analysis, and differential scanning calorimetry techniques. Subsequently, an organic field effect transistor (OFET) was fabricated with PLina‐g‐PSt‐g‐PCL graft copolymers as the insulator layer. Poly(3‐hexylthiophene) (P3HT) was used as the active layer and prepatterned OFET substrates were used as the welding/discharge electrodes. To measure capacitance, an ITO/P3HT/PLina‐g‐PSt‐g‐PCL/Al structure was prepared using the same method. To obtain output and transfer current–voltage characteristics, electrical characterizations of OFET devices were conducted in darkness and an atmosphere of air. From a capacitance–frequency plot, the key characteristics of the devices, including the threshold voltage (VTh), field effect mobility, and current on/off ratio (Ion/off), were derived. The fundamental electrical parameters in the fabricated OFET devices based on styrene concentration were thoroughly examined. It was observed that the produced PLina‐g‐PSt‐g‐PCL OFETs display positive device characteristics such as low VTh, exceptional mobility, and Ion/off values. © 2023 The Authors. Polymer International published by John Wiley &amp; Sons Ltd on behalf of Society of Industrial Chemistry.