Optoelectronic Integrated Circuits Research Articles

Enhanced optical transmission in a plasmonic nanostructure perforated with compound holes and nanorods

We propose a novel enhanced optical transmission plasmonic nanostructure composed of a metallic film perforated with a compound rectangular hole and nanorod array. The optical characteristics are investigated by the three-dimensional finite-difference time-domain (FDTD) method. An extraordinary enhanced transmission (transmittance over 96%) in the optical regime is obtained as a result of the excitation and hybridization of localized surface plasmon resonances (LSPRs), surface plasmon polaritons (SPPs), as well as the gap plasmon modes supported by the holes. The enhanced optical transmission can be effectively tailored by changing the geometrical parameters such as the length and width of inner cubic Ag nanorods, the gap of rectangular holes, the period of compound hole array, as well as the height of Ag film due to their effects on oscillating charges on metal surfaces. The structure could facilitate numerous important applications in highly integrated plasmonic filters and optoelectronic circuits.

Photonic Crystal Structures Based on GaN Ultrathin Membranes

We report on maskless fabrication of ultrathin (d ∼ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with a diameter of 150 nm, and show that these membranes represent an intermediate case between two-dimensional (2D) and three-dimensional (3D) photonic crystals (PhC). A calculation of the dispersion law in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, further, there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed.

Silicon-based silicon–germanium–tin heterostructure photonics

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

Optical effects on the characteristics of a nanoscale SOI MOSFET with uniform doping profile

This paper deals with the effects of optical radiation on a uniformly doped three dimensional nano scale SOI MOSFET including quantum mechanical effects. The model takes into account all the major effects that determine the device characteristics in the illuminated condition. The device characteristics are obtained using self-consistent solution of 3D Poisson–Schrodinger equations using Leibman's iteration method. Calculations were carried out to examine the effect of illumination on the surface potential, current–voltage characteristics, drain to source resistance (Rds), sub threshold characteristics and transconductance (gm). The obtained characteristics are used to examine the performance of the device for its suitable use as a photodetector in opto-electronic integrated circuit (OEIC) receivers.

Development of an optoelectronic integrated circuit for indoor optical wireless communication systems

ABSTRACTIndoor optical wireless communication systems use in most cases discrete built receivers. The analogue part of receivers consists of a photodetector and an amplifier. In this paper, we present a fully integrated optoelectronic integrated circuit that combines a photodetector and an amplifier into one single receiver chip. We show the evolution of such receivers and examine the benefits of their production as standard semiconductor chip. We developed a fully integrated receiver for a 3Gbit/s communication in standard BiCMOS technology. We expanded the receiver by additional photodetectors to have the possibility of implementing an automatic alignment system. To demonstrate the performance of this receiver, we built a complete indoor optical wireless communication system. We increased the working area of the system by applying two strategies at the transmitter side. First, we used an adaptive optical system to influence the laser spot diameter. Second, to steer the laser beam, we included a micro‐electro‐mechanical system. Copyright © 2014 John Wiley & Sons, Ltd.

SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

Microstrip Patch Antenna: A Survey

The sizes and weight of various wireless electronic system have rapidly reduced due to the development of modern integrated circuit technology. A Microstrip antenna (MSA) is well suited for wireless communication due to its low profile, conformal nature, light weight, low cost of production, robust nature and compatibility with microwave monolithic integrated circuits (MMICs) and optoelectronic integrated circuits (OEICs) technologies. In this paper the complete discussion is focused on the working principles, limitations and the applications of microstrip patch antenna.

Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors

We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.

Analysis of single‐mode optical rib waveguide in silicon carbide

ABSTRACTOptical rib waveguide on a wide bandgap semiconductor—silicon carbide (SiC)—in single‐mode condition has been investigated. The effects of waveguide geometry including slab thickness and rib width and height on the waveguide performance were studied using effective index method. It was found that design can be optimized when the fundamental modes HE00 or EH00 propagate in the waveguide with very low loss, while the higher‐order modes like HE10, HE20 or EH10, EH20 are cutoff. The correction factor which affects single‐mode requirement was also examined with the values in both HE and EH modes proposed. The superior material properties of SiC, when combined with optimized design and performance, will lead to a promising waveguide device with great potential for applications such as optoelectronic IC. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2636–2640, 2013

Optical Wireless Communication With Adaptive Focus and MEMS-Based Beam Steering

An optical wireless communication system for an operation with wavelengths detectable by silicon optoelectronic integrated circuits is described. We use direct modulated vertical cavity surface emitting lasers as a transmitter. The field of view of the laser beam is adjusted with an adaptive optical system and aligned with a micro-electro-mechanical system based mirror for beam steering. To receive the modulated laser beam, we develop a receiver chip in 0.35 μm BiCMOS technology. The experimental system shows a 3 Gb/s wireless transmission over a distance of 7 m with a bit-error rate <;10-9 without cost intensive optical components and complex adjustment procedure.

Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor

We demonstrate a silicon-based optoelectronic integrated circuit (OEIC) for label-free bio/chemical sensing application. Such on-chip OEIC sensor system consists of optical grating couplers for vertical light coupling into silicon waveguides, a thermal-tunable microring as a tunable filter, an exposed microring as an optical label-free sensor, and a Ge photodetector for a direct electrical readout. Different from the conventional wavelength-scanning method, we adopt low-cost broadband ASE light source, together with the on-chip tunable filter to generate sliced light source. The effective refractive index change of the sensing microring induced by the sensing target is traced by scanning the supplied electrical power applied onto the tracing microring, and the detected electrical signal is read out by the Ge photodetector. For bulk refractive index sensing, we demonstrate using such OEIC sensing system with a sensitivity of ~15 mW/RIU and a detection limit of 3.9 μ-RIU, while for surface sensing of biotin-streptavidin, we obtain a surface mass sensitivity of S(m) = ~192 µW/ng·mm(-2) and a surface detection limit of 0.3 pg/mm(2). The presented OEIC sensing system is suitable for point-of-care applications.

Enhanced Optical Transmission of a Continuous Metal Film With Double Metal Cylinder Arrays

A novel metal structure that integrates a continuous metal film and double deep subwavelength metal cylinder arrays standing on both surfaces is proposed. Near-perfect optical transmission is observed in this metal film structure due to the cooperative effects of the double deep subwavelength plasmonic arrays which, respectively, act as the efficient light input and output couplers. High tunability of transmission behaviors is demonstrated by varying the geometry parameters of the cylinder arrays and the surrounding refractive index. Such a high transparent metal film structure with an ultra-small geometry size (gap distance $G resonant wavelength $(\lambda)$ /160, period $P ) could facilitate numerous important applications in highly integrated plasmonic filters, sensors, and optoelectronic circuits.

Quantum dot rolled-up microtube optoelectronic integrated circuit

A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

3 Gbit/s optical receiver IC with high sensitivity and large integrated pin photodiode

An optoelectronic integrated circuit in a 0.35 µm BiCMOS technology containing a 200 µm diameter pin photodiode for optical wireless communication systems is presented. The design consists of a highly efficient integrated Si pin photodiode, a transimpedance amplifier and 50 Ω output driver. The overall transimpedance of the whole receiver is 86.6 dBΩ. At a data rate of 3 Gbit/s with a pseudorandom bit sequence of 231 − 1 a sensitivity of − 23.4 dBm is achieved (BER = 10− 9, λ = 675 nm).

Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

In this study, the prototype optoelectronic integrated circuits (OEICs) operating with optical input signals were designed and fabricated. A back-side-illuminated (BSI) photodiode was designed and demonstrated by a newly proposed practical method, utilizing micro-electromechanical systems (MEMS) and postcomplement metal oxide semiconductor (CMOS) processes. Additional fabrication processes for the BSI photodiode were proposed and described in detail in this paper. The operational amplifier for amplification of the optical current by the BSI photodiode as the transimpedance amplifier was designed and fabricated. And the pulse width modulation (PWM) wave generator was implemented for modulating optical signals as the prototype OEIC device. The maximum quantum efficiency of 28.4% was obtained from the fabricated BSI photodiode. Output signals of PWM were successfully controlled by the generated optical current of the BSI photodiode.

Optical effects on the characteristics of GaAs nanoscale FinFET with vertical Gaussian doping profile

In this paper, the optical effects on the characteristics of GaAs FinFET with Gaussian doping profile in the vertical direction of the channel considering quantum mechanical effects (QME) have been theoretically examined and analyzed. The device characteristics are obtained using self-consistent solution of 3D Poisson–Schrödinger equations using interpolating wavelet method and Simpson's one-third rule. This method provides more accurate results by dynamically adjusting the computational mesh and scales the CPU time linearly with the number of mesh points using polynomial interpolation, hence reducing the numerical cost. The results obtained are compared with uniformly doped Si FinFET photodetector characteristics and used to examine the performance of the device for its suitable use as a photodetector in Opto-Electronic Integrated Circuit (OEIC) receivers.

Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications

ABSTRACTWith general lighting applications being responsible for over 20% of the energy consumption in the United States, advances in solid-state lighting have the potential for considerable energy and cost savings. The United States Department of Energy predicts that the increased use of solid state lighting will result in a 46% lighting consumption energy savings by the year 2030. Smart lighting systems have the potential for reducing energy costs while also providing a means for short distance data transmission via free space optics. The group III-nitride (III-N) family of materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), their binary and ternary alloys, are uniquely situated to provide light emitting diodes (LEDs) across the full visible spectrum, photodetectors (PDs) and high power, high speed transistors. In this work, aluminum gallium nitride (AlGaN) / GaN high electron mobility transistors (HEMTs) and indium gallium nitride (InGaN) photodiodes (PDs) are fabricated and characterized. HEMTs and LEDs (or PDs) are grown on the same substrate for the purpose of creating electronic and optoelectronic integrated circuits.

An integrated 125-Gb/s optoelectronic receiver with a silicon avalanche photodetectorin standard SiGe BiCMOS technology

An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

A novel Si-based photodetector with flat-top and steep-edge spectral response

To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, flat-top and steep-edge characteristics of these photodetectors are suitable to be used in 50GHz, 100GHz, 200GHz DWDM system.

Propagation, Resonance, and Radiation on Terahertz Optoelectronic Integrated Circuits

This paper investigates terahertz (THz) wave propagation, resonance, and radiation on a THz optoelectronic integrated circuit (THz-OEIC). An efficient THz resonant radiation from 0.6 to 0.7 THz can be achieved with a newly designed 2-D open-ended rampart slot array antenna. A monolithically integrated circuit is fabricated on a localized THz resonant cavity, which not only provides a robust base for postdevice processes but also helps collect and reradiate the fleeing surface waves to enhance radiation efficiency. When using a THz time-domain spectroscopy (THz-TDS) technique and a time-frequency analysis, the radiated THz waveform shows a good time-frequency correlation to the circuit design of our THz-OEIC. In addition, an optical-to-THz per-pulse conversion efficiency of 6.41 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> can be achieved by a localized THz resonant cavity design. The enhanced optical-to-THz per-pulse conversion efficiency and THz propagation, resonance, and radiation behavior revealed not only help to understand the on-chip THz transmission phenomena but provide a good potentiality for a THz-OEIC design to be applied in low power-consuming microfluidic-channel-based THz biosensing chips as well.