Optoelectronic Industry Research Articles

Strain effect on the physical properties of novel Mg3NI3 perovskite material: First principle DFT analysis

Inorganic perovskite-based substances have become a major attraction to solar technology. Inorganic cubic Mg3NI3 perovskites have generated a heap of fascination owing to their distinctive optical, electrical, and structural features. The photovoltaic and optoelectronic industries prioritize lead-free, atomically tailored metal halide perovskites due to the need to address lead (Pb) toxicity and instability. This study assessed the optical, structural, and electrical parameters of Pb-free inorganic halide perovskites Mg3NI3 as a function of biaxial compressive and tensile strain, leveraging first-principles density-functional theory (FP-DFT). Refractive index, absorption coefficient, reflectivity, dielectric function, and tolerance factor are a few additional optical parameters that are computed and processed. The bandgap of the planar Mg3NI3 molecule is 0.412 eV (PBE) when SOC is not applied. The bandgap reduces to 0.363 eV (PBE) at its Γ(gamma) and R-point when the subjective SOC effect is taken into consideration. This compound's bandgap will narrow under tensile strain and expand under compressive strain, depending on whether the SOC effect is applied or not. Several elastic factors are anticipated, including the bulk modulus, Pugh's ratio, elastic constants, anisotropic factors, and Poisson's ratio. Electronic property calculations using band mechanism and density of states (DOS) suggest that Mg3NI3 have a bandgap that is indirect and semiconductive. The elastic properties of this material were found to be mechanically stable, anisotropic, and ductile. In the photon energy range suitable for solar cells, the spikes in the dielectric constant of Mg3NI3 are seen. Our findings point to the prospect of Mg3NI3 as a non-toxic, high-performance, low-cost material for implementation in solar cells and different semiconductor devices.

New paradigms of 2D layered material self-driven photodetectors.

By virtue of the high carrier mobility, diverse electronic band structures, excellent electrostatic tunability, easy integration, and strong light-harvesting capability, 2D layered materials (2DLMs) have emerged as compelling contenders in the realm of photodetection and ushered in a new era of optoelectronic industry. In contrast to powered devices, self-driven photodetectors boast a wealth of advantages, notably low dark current, superior signal-to-noise ratio, low energy consumption, and exceptional compactness. Nevertheless, the construction of self-driven 2DLM photodetectors based on traditional p-n, homo-type, or Schottky heterojunctions, predominantly adopting a vertical configuration, confronts insurmountable dilemmas such as intricate fabrication procedures, sophisticated equipment, and formidable interface issues. In recent years, worldwide researchers have been devoted to pursuing exceptional strategies aimed at achieving the self-driven characteristics. This comprehensive review offers a methodical survey of the emergent paradigms toward self-driven photodetectors constructed from 2DLMs. Firstly, the burgeoning approaches employed to realize diverse self-driven 2DLM photodetectors are compiled, encompassing strategies such as strain modulation, thickness tailoring, structural engineering, asymmetric ferroelectric gating, asymmetric contacts (including work function, contact length, and contact area), ferroelectricity-enabled bulk photovoltaic effect, asymmetric optical antennas, among others, with a keen eye on the fundamental physical mechanisms that underpin them. Subsequently, the prevalent challenges within this research landscape are outlined, and the corresponding potential approaches for overcoming these obstacles are proposed. On the whole, this review highlights new device engineering avenues for the implementation of bias-free, high-performance, and highly integrated 2DLM optoelectronic devices.

Cage-Based 3D Tetrahexagonal Boron Nitride Crystal with Excellent Terahertz Light Absorption.

In recent findings, a new classification of 1D and 2D tetrahexagonal boron nitrides (th-BN) consisting of square and hexagonal rings has been documented. These materials exhibit impressive properties such as the tunable band gap, strong optical absorption, suitable sign-tunable Poisson's ratio, and high ideal strength, making them promising for applications in nano- and opto-electronic industries. Stimulated by these studies, we have designed a cage-based three-dimensional tetrahexagonal boron nitride (3D th-B6N6) structure, which demonstrates excellent thermal, dynamic, and mechanical stability, including exceptional cohesive and formation energies of 6.66 and -0.93 eV per atom. Unlike direct band gap 1D and 2D tetrahexagonal boron nitride semiconductors, the proposed 3D tetrahexagonal boron nitride exhibits an insulating nature, with a wide indirect band gap of 6.175 eV at the HSE06 level. Moreover, in contrast to the unequal chemical bonding and ultraviolet optical absorption observed in the 2D th-BN sheet, all B and N atoms form a fully sp3-hybridized bonded 3D th-B6N6 structure, with excellent terahertz light absorption in the range of 0.3-10 THz. Notably, it also exhibits a Debye temperature of 1304.55 K and substantial phonon inelastic scattering. Our study introduces the BN family with novel properties and potential applications.

Bandgap Characteristics of Boron-Containing Nitrides—Ab Initio Study for Optoelectronic Applications

Hexagonal boron nitride (h-BN) is recognized as a 2D wide bandgap material with unique properties, such as effective photoluminescence and diverse lattice parameters. Nitride alloys containing h-BN have the potential to revolutionize the electronics and optoelectronics industries. The energy band structures of three boron-containing nitride alloys—BxAl1−xN, BxGa1−xN, and BxIn1−xN—were calculated using standard density functional theory (DFT) with the hybrid Heyd–Scuseria–Ernzerhof (HSE) function to correct lattice parameters and energy gaps. The results for both wurtzite and hexagonal structures reveal several notable characteristics, including a wide range of bandgap values, the presence of both direct and indirect bandgaps, and phase mixing between wurtzite and hexagonal structures. The hexagonal phase in these alloys is observed at very low and very high boron concentrations (x), as well as in specific atomic configurations across the entire composition range. However, cohesive energy calculations show that the hexagonal phase is more stable than the wurtzite phase only when x > 0.5, regardless of atomic arrangement. These findings provide practical guidance for optimizing the epitaxial growth of boron-containing nitride thin films, which could drive future advancements in electronics and optoelectronics applications.

Poly(4‐methoxyaniline) composites: Investigating structure–property relationship towards semiconducting applications

ABSTRACTConjugated polymers are essential materials for the organic optoelectronic industry, serving a pivotal role in cutting‐edge technologies. In this study, we conducted an integrated characterization approach, including spectroscopic techniques coupled with X‐ray diffraction analysis to explore the structure–property relationship of poly(4‐methoxyaniline), commonly referred to as poly(p‐anisidine) or PPA, along with two distinct ceramic composites: PPA/α‐Al2O3 and PPA/Eu2O3. From powder X‐ray diffraction analysis, a triclinic unit cell in space group P1 is proposed, after the whole powder pattern decomposition (WPPD) refinement is employed for the semicrystalline regions of the polymeric phases. Fractal‐like structures are observed, following analysis of small‐angle X‐ray scattering (SAXS) data and scanning electron microscopy (SEM) from which we could infer the approximate sizes of the fractal clusters. Pure PPA displays a glass transition temperature (Tg) of approximately 80°C and an electrical conductivity slightly above 10−5 S/cm. In contrast, the composite materials do not exhibit a glass transition temperature but perform better in terms of crystallinity and thermal stability. PPA/Eu2O3 present conductivity enhancement exceeding tenfold, surpassing 10−4 S/cm. These findings provide the baseline for further explorations on the development of organic electronic devices and sensors.

Exploring the inorganic perovskite materials Mg3SbX3 (Where, X=I, Br, Cl and F) through the perspective of density functional theory: Adjustment of physical characteristics as consequence of strain

The solar technology industry has lately given inorganic perovskite materials an abundance of thought because of their unique optical, electrical and structural characteristics. Issues pertaining to lead (Pb) toxicity and instability require being referred to promptly, making lead-free atomically designed metal halide perovskites of foremost importance to the photovoltaic and optoelectronic industries. Perovskites, a class of inorganic metal halide semiconductors, have variant similarities with Mg3SbX3 (X = I, Br, Cl and F). According to the space group Pm-3m Mg3SbX3 (X = I, Br, Cl and F) has a cubic perovskite crystal structure. Utilizing first-principles density-functional theory (FPDFT), The intention of this investigation is to analyze how strain and spin-orbit coupling (SOC) impact the structural, electrical, optical and mechanical features of the inorganic cubic perovskite of Mg3SbX3 (X = I, Br, Cl and F). At the point between R and Γ, the Mg3SbI3,Mg3SbBr3,Mg3SbCl3 molecule displays an indirect bandgap of 0.105 eV, 0.957 eV, 1.728 eV. At the Γ point, the Mg3SbF3 molecule displays a direct bandgap of 3.184 eV. The bandgaps of the Mg3SbI3,Mg3SbBr3,Mg3SbCl3 and Mg3SbF3 perovskites are 0.198 eV, 1.203 eV, 1.901 eV and 3.723 eV respectively, when considering the spin-orbital coupling (SOC) quantum influence. A wider bandgap is investigated for increasing compressive strain while a smaller bandgap is observed for increasing tensile strain. Apart from the elastic constants and anisotropic factors, other factors that are anticipated include Pugh's ratio, Poisson's ratio, bulk modulus and others. Isotropic, ductile and mechanically stable are the words that best describe these materials, according to the elastic property evaluations. In the photon energy range that is appropriate for solar cells, the dielectric constant spikes of Mg3SbX3 are found to be visible. Therefore, Mg3SbX3 (X = I, Br, Cl and F) perovskite is a good material to use in solar cells for managing light and producing electricity.

Determination of tetramethylammonium hydroxide in air using ion chromatography or ultra-performance liquid chromatography - high-resolution mass spectrometry

Tetramethylammonium hydroxide (TMAH) is extensively utilized in the semiconductor and optoelectronic industries, serving as either a developer or an etchant. TMAH possesses acute toxicity and alkaline corrosiveness, having caused several fatal and injurious accidents in Taiwan. However, there is currently a lack of methods available for assessing TMAH exposure. This study developed a method involving sampling with quartz fiber filters followed by ultrasonic agitation in 10 mL mobile phase, filtering, and analysis using either ion chromatography (IC) or ultra-performance liquid chromatography - high-resolution mass spectrometry (UPLC-HRMS). Utilizing the characteristics of HRMS, the compound analyzed was identified as tetramethylammonium ion (TMA+) through mass spectrometry analysis. The method exhibits excellent trapping capacity and recovery rate. The linear range of TMA+ for IC is 0.3 to 100 μg/mL, with a correlation coefficient of R = 0.9998. The linear range of TMA+ for UPLC-HRMS is 0.002 to 1 μg/mL, with a correlation coefficient of R = 0.996. The recovery rates for IC and HRMS were 116.6% and 90.6%, with corresponding coefficient of variation (CV) of 2.25% and 3.53%, respectively. Samples can be stored at room temperature for 28 days. Verification of this method was conducted at the TMAH factory, and the air concentrations measured in the TMAH filling area were 3.29 and 4.75 μg/m3 from IC and UPLC-HRMS, respectively. This method will be applied in the on-site analysis of occupational hazards for operators in chemical plants, technology factories, and recycling plants, aiming to evaluate risk values to protect the safety and health of workers and prevent occupational diseases.

Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals

Although GaP, a III-V compound semiconductor, has been extensively utilized in the optoelectronic industry for decades as a traditional material, the inherent indirect bandgap nature of GaP limits its efficiency. Here, we demonstrate an indirect-to-direct bandgap transition of GaP through the formation of quantum shells on the surface of ZnS nanocrystals. The ZnS/GaP quantum shell with a reverse-type I heterojunction, consisting of a monolayer-thin GaP shell grown atop a ZnS core, exhibits a record-high photoluminescence quantum yield of 45.4% in the violet emission range (wavelength = 409 nm), validating its direct bandgap nature. Density functional theory calculations further reveal that ZnS nanocrystals, as the growth platform for GaP quantum shells, play a crucial role in the direct bandgap formation through hybridization of electronic states with GaP. These findings suggest potential for achieving direct bandgaps in compounds that are constrained by their inherent indirect energy gaps, offering a strategy for tailoring energy structures to significantly improve efficiencies in optoelectronics and photovoltaics.

Comparative study of the electronic and optical properties of Rhenium based Chalcogenides

Transition metal dichalcogenides are materials of growing interest due to their unique electronic properties and rich phase diagram, offering promising opportunities for various applications. In this study, we investigate the optoelectronic characteristics of two-dimensional rhenium (Re)-based chalcogenides. These materials are composed of rhenium atoms sandwiched between chalcogen layers. In this paper, we have selected three rhenium-based chalcogenide (ReS2, ReSe2 and ReTe2) compounds in their 1T structure and calculated their electronic properties. Our study aims to find the intricacies of theoretical band structures and optical properties, aiming to assess their viability as semiconducting materials for the optoelectronics industry employing density funtional theory. Furthermore, we explore the impact of varying chalcogen compositions on the optoelectronic behavior, uncovering the tunability of these materials for specific applications. The study provides insights into the role of Re-based chalcogenides as promising candidates for emerging technologies, including photodetectors, solar cells, and other optoelectronic devices. The observed band gaps highlight the potential of these materials within the infrared region of the electromagnetic spectrum. After observing optical properties derived from our calculations, we discuss the corresponding potentials of the chosen materials in optoelectronic applications.

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

AbstractUltrapure gallium up to 99.9999%/ 99.99999% (6N/7N) purity level is a highly demanding material needed for the growth of gallium‐based group III–V semiconductor compounds and optoelectronic devices. However, general extraction of gallium from Bayer liquor contains high impurity content and ultra‐purification of the same cannot be accomplished by a single step. Thus, the purpose of this review is to assess various purification processes for the production of ultra‐pure gallium and to critically examine its applications in the optoelectronics industry. Through this research survey, it is found that zone refining of the zone melting process stands tall over other methods in purifying materials even up to 13N. Hence, scientists are adopting detailed mathematical models and simulation tools for designing unique zone refining systems for material purification. Current‐day technology even adopts intelligence methods such as machine learning, which sheds light on the importance of different zone refining parameters that influence the purification process. Here, the practical aspects of zone refining and how the feedback from the theoretical models or performance prediction through intelligence methods can be effectively incorporated into practice have also been emphasized

Heterocycle- and Amine-Free Electrochromic and Electrofluorochromic Molecules for Energy-Saving See-Through Smart Windows and Displays.

Electrochromic (EC) smart windows are an elegant alternative to dusty curtains, blinds, and traditional dimming devices. The EC energy storage smart windows and displays received remarkable attention in the optoelectronic industry as they hold promise for high energy efficiency, low power consumption, reversibility, and swift response to stimuli. However, achieving these properties remains challenging. Moreover, most EC molecules do not exhibit electrofluorochromism, which is highly essential for smart displays because its EC property can modulate the solar heat entering the building, and its electrofluorochromic (EFC) aspects can create lighting during the night. In this work, a structure-property relationship is utilized to develop new electrochromes that can store the injected charge, and these molecules indeed exhibit electrofluorochromism. The compounds are synthesized from tetrabenzofluorene with two aromatic acceptor units, and avoids the use of widely studied heterocycles and amine derivatives. The electrochromes switches from yellow to dark hue in solution, solid, and gel state. The compounds display exceptional electrochemical stability and reversibility in 1000 cycles and capacity retention of 93-100 % in 300 charging-discharging cycles. The proof-of-concept device fabrication of the self-dimming EC smart window presented here demonstrates that it can furnish visual comfort, modulate transmitted light and glare, and reduce energy usage.

Interface engineering of composite systems: Focusing on the compatibility of reduced graphene oxide and Bi0.8La0.1Ba0.1Fe0.9Ti0.1O3 hybrid systems

The composite of reduced graphene oxide and perovskite-based ferroelectric materials offers exciting opportunities to enhance the optical performance of optoelectronic devices. The present work reporting rGO modified x(Bi0.8La0.1Ba0.1Fe0.9Ti0.1O3)-1-x(rGO) (La-BBFT/rGO) composite to investigate their structural, morphological, electrical, magnetic and optical properties by using robust solid-state and spun calcination method. X-Ray diffraction patterns confirm the rhombohedral crystal structure with space group (R3c) of both samples with the presence of rGO as second phase. The functional groups present in reduced graphene oxide (rGO) can act as nucleation sites for crystallization, leading to the formation of more grains and Grain boundaries. The ferroelectric phase transition was observed in La-BBFT/rGO composites at comparatively low temperature near 250 °C. The impedance spectroscopy confirms the non-Debye behaviour of relaxation process. The electric and magnetic remanence shows the compatibility of the switching state. Additionally, the optical band gap energy of both samples was evaluated and found to be in the range of 2.0 to 1.9eV. Incorporation of rGO in La-BBFT/rGO, were marginally improved, the dialectic, impedance, and optical properties, which could be beneficial for electronic and optical components in the opto-electronic industries.

Band gap tunability in DC sputtered Ni-doped ZnO thin films for wide usage in optoelectronic gadgets

ZnO thin films have brought significant applicability in optoelectronic and energy storage devices based on their environmental friendliness. Pristine ZnO, 6.25 % and 12.5 % Ni-doped ZnO thin films were deposited on Si substrate via direct current and radio frequency magnetrons, respectively. The X-ray diffraction patterns exhibited phase purity of synthesized thin films. The micrographs showed reduction in average grain size for pure ZnO, 6.25 % and 12.5 % Ni-doped ZnO as 95 nm, 70 nm and 60 nm, respectively. The elemental purity was confirmed by energy dispersive X-ray. The ellipsometric analysis showed that Ni inclusion brought band gap variation from 3.06 to 3.08 eV for pure ZnO to 12.5 % Ni-doped ZnO thin films. The real part of dielectric constant enhanced from 3.60 to 3.75 for 12.5 % Ni-doped ZnO, simultaneously depicting reduction in dielectric loss from 0.45 to 0.40. Conclusively, proposing Ni-doped ZnO thin films with low dielectric loss as a potential candidate in optoelectronic industry.

Scalable flexible and stretchable high performance UV photodetector based on MoS2-WO3/Ag composite on a PU substrate by utilizing LIG electrodes

The rapid advancements in photodetector device technologies have captivated the optoelectronic industry owing to their strong features, such as wearability, stretchability, energy efficiency, scalability and cost-effectiveness. However, there is still scope for enhancement in device performance, reliability, and scalable fabrication. In this research work, we have proposed a novel strategy for fabricating stretchable ultraviolet (UV) photodetector (PD) on a polyethylene glycol solution-processed synthesis of MoS2-WO3/Ag composite-based nanocrystals onto a polyurethane (PU) substrate. Moreover, laser induced graphene (LIG) interdigitated electrode arrays for swift photogenerated charge extraction due to their high conductivity. The device displays high photoresponsivity, external quantum efficiency, and specific detectivity, measured at 6.84 A/W, 143 %, and 2.87×1011 Jones, respectively. Additionally, the device demonstrates a quick response time of 80 ms when exposed to 360 nm light, indicating its high speed. These essential advantages have a great potential for applications in real life and mass production. The integration of advanced materials and LIG electrodes enhances the device capability for next-generation stretchable, flexible and wearable electronic devices.

Realization of IR Photodetector based on AGNRs operating in the Atmospheric Windows

Nowadays, the importance of Atmospheric windows in optoelectronic industries is not hidden from anyone. On the other hand, using graphene nanoribbons widely has been applied in optical devices. So, armchair graphene nanoribbons (AGNRs) from three different families as IR photodetectors are proposed and modeled, in this work. Our results show that the energy gap of AGNRs has been in the 1–3 μm and 8–14 μm atmospheric windows in the pure state and with nitrogen (N)/boron (B) substitutional doping. Also, responsivity and specific detectivity (D*) have been calculated, by introducing a simple structure as an IR photodetector. The energy gap and dark current (Jdark) calculations have been done by density functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism, respectively. The specific detectivity peaks on the order of 109 cmHz1/2/W for 9-AGNR and 10-AGNR at 1–3 μm atmospheric window have been concluded. Furthermore, our results show that 11-AGNR with B dopants can be used to design dual-band detectors in the 1–3 μm and 8–14 μm atmospheric windows.

Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control.

Substrate oxidation is inevitable when exposed to ambient atmosphere during semiconductor manufacturing, which is detrimental to the fabrication of state-of-the-art devices. Optimizing the deoxidation process in molecular beam epitaxy (MBE) for random substrates poses a multidimensional challenge and is sometimes controversial. Due to variations in substrates and growth processes, the determination of the deoxidation condition heavily relies on the individual's expertise, yielding inconsistent results. This study employs a machine learning model that integrates interpolation and vision transformer (Interpolation-ViT) techniques. The model utilizes reflection high-energy electron diffraction videos as input to predict the status of the substrate, enabling automated deoxidation within a controlled architecture for various substrates. Furthermore, we highlight the potential of models trained on data from specific MBE equipment to achieve high-accuracy deployment on different pieces of equipment. In contrast to traditional methods, our approach holds exceptional value, as it standardizes deoxidation temperatures across diverse equipment and substrates. This significantly advances the standardization of the semiconductor process. The concepts and methods presented are expected to revolutionize semiconductor manufacturing processes in the optoelectronic and microelectronic industries.

Study of the impurity composition of silicon tetrachloride by gas chromatography-mass-spectrometry

Silicon tetrachloride is a sought-after substance in the semiconductor and optoelectronics industries. High demands placed on its purity entail the need for detail information about the impurities present. The impurity composition of silicon tetrachloride obtained by different technologies (chlorination of diatomite and charcoal, disproportionation of trichlorosilane and chlorination of isotopically enriched silicon) was studied using the method of chromatography-mass spectrometry. Study of the possibility of using a DB-5MS 30 m × 0.32 mm × 0.25 μm capillary column with methylsiloxane as a stationary liquid phase to separate impurities revealed that most of the identified substances are eluted in the form of separate chromatographic peaks, which simplifies their determination. The exceptions are impurities N2, O2, Ar, as well as CO2, SiF4, and CHClF2, HCl, H2S. They were registered using the characteristic peaks of the mass spectra. To identify impurities, experimental mass spectra were compared to data from the NIST library and those known from the literature. Information on the impurity composition of SiCl4 has been expanded. It contains permanent gases, aliphatic and chlorine-containing hydrocarbons, chlorides of elements, sulfur-containing substances, and organosilicon compounds. A total of 30 compounds are identified, 19 being discovered for the first time. The mass spectrum of C2H6Cl4OSi2, which is absent in the literature, was obtained and described. For the first time, data on the impurity composition of isotopically enriched silicon tetrachloride have been obtained. A comparative analysis of the impurity composition of the samples under study was carried out and the impurities characteristic of each of them were determined. The data obtained in the study can be used in developing the technology for deep purification of silicon tetrachloride and in characterization of SiCl4 by manufacturing enterprises.

Significant enhancement in the photoelectronic properties of SnI4 via pressure-tailored phase engineering

Constantly developing superior functional materials with fascinating photoelectric properties is crucial for advancing the optoelectronics industry. Here, we demonstrate a feasible strategy to significantly improve the photoelectric properties of SnI4 through employing high pressure phase engineering. With increasing pressure, the photocurrent response of SnI4 undergoes sequential enhancement and the maximum photocurrent of SnI4 is five orders of magnitude higher than that observed at initial pressure under Xe-lamp illumination. Surprisingly, the photoelectric spectral response range was expanded from visible region to near-infrared waveband (1650 nm) upon successive compression. These remarkable enhancements in photoelectric activities are attributed to the pressure-induced semiconducting cubic phase to metal triclinic phase transition in SnI4. The occurrence of the metal phase improves the charge carriers transfer ability and photon absorption in a wider spectral range. Our findings provide some valuable insights and an avenue for regulating the photoelectric properties of materials by manipulating the phase composition with pressure.

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

AbstractUltralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements. A nanoscale polycrystalline Hf0.75Zr0.25O2 (HZO) thin films on Pt/Si substrate are fabricated and investigated for suitability for bipolar resistive switching. The device illustrates monoclinic and tetragonal/orthorhombic phases with weak ferroelectricity and robust resistive switching. Small remanent polarization (≈0.1 μC cm−2) may assist in the height reduction of barrier height and ease the electron for transport. Remarkably, the Al/HZO/Pt/Si device, consisting of thin films with 10 and 5 nm thicknesses, exhibits a switching voltage below −30 mV from a low‐resistance state (LRS) to a high‐resistance state (HRS). It shows a significant ROFF/RON ratio of 106, making it suitable for low power consumption and minimal heat dissipation devices. Moreover, the utilization of an ultrathin film (5 nm) results in an improved reduction (< 0.7 V) of the operating window at the positive voltage. Direct tunneling and the Fowler–Nordheim tunneling model are performed in current–voltage (I–V) data to study the charge transportation behavior over a trapezoidal and triangular potential barrier. These results of the HZO candidate may stimulate the futuristic nonvolatile resistive random‐access memory (ReRAM) in the optoelectronic industry.

Cost‐Effective and Flexible Scalable Fabrication of WO3 UV Photodetectors with Enhanced Performance via Integrated LIG Electrodes

AbstractThe emerging flexible device technologies have fascinated the modern optoelectronic industry owing to their invincible properties such as wearable, stretchable, smart, energy‐efficient, scalability, cost‐effective, and high performance. However, there is still room for improvements such as performance, reliability, and mass production. This research work fabricates laser‐induced graphene (LIG) interdigitated electrodes based on flexible UV photodetectors over polyimide substrate, using solution‐processed tungsten oxide (WO3) thin film as photoactive material. The best device performance is achieved through the optimization of laser power for the deposition of LIG, as well as a different solvent for WO3. The device shows excellent photoresponsivity, external quantum efficiency, and specific detectivity of 500 mA W−1, 164%, and 3.09 × 1012 Jones, respectively. Moreover, a fast response time, such as 0.3 ms for 375 nm light, is observed. This study offers a comprehensive elucidation of the intricate process through which photoelectrons are moved toward WO3 facilitated by the electric field present at the interface of the LIG and WO3.