Abstract
Constantly developing superior functional materials with fascinating photoelectric properties is crucial for advancing the optoelectronics industry. Here, we demonstrate a feasible strategy to significantly improve the photoelectric properties of SnI4 through employing high pressure phase engineering. With increasing pressure, the photocurrent response of SnI4 undergoes sequential enhancement and the maximum photocurrent of SnI4 is five orders of magnitude higher than that observed at initial pressure under Xe-lamp illumination. Surprisingly, the photoelectric spectral response range was expanded from visible region to near-infrared waveband (1650 nm) upon successive compression. These remarkable enhancements in photoelectric activities are attributed to the pressure-induced semiconducting cubic phase to metal triclinic phase transition in SnI4. The occurrence of the metal phase improves the charge carriers transfer ability and photon absorption in a wider spectral range. Our findings provide some valuable insights and an avenue for regulating the photoelectric properties of materials by manipulating the phase composition with pressure.
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