Field Of Optoelectronics Research Articles

Stable Organic‐Inorganic Hybrid Sb(III) Halide Scintillator for Nonplanar Ultra‐Flexible X‐Ray Imaging

AbstractFlexible scintillator screens with excellent stability and low detection limits are crucial for X‐ray imaging applications. 0D organic metal halide materials have emerged as a strong contender in the scintillator fields, owing to their excellent optical characteristics and simple maneuverability. Herein, high‐quality and large quantities of C38H36P2Sb2Cl8 single crystals are synthesized through a simple solution approach. The prepared single crystals with dimer‐structure [Sb2Cl8]2− exhibit yellow emission with a near‐unity high photoluminescence quantum yield (PLQY) of 99.8%, and possess an exceptional light yield of 41300 photons MeV−1, and a detection limit as low as 45.6 nGyair s−1. On this basis, a large‐size and ultra‐flexible C38H36P2Sb2Cl8 scintillator utilized for X‐ray imaging is prepared by template assembled method, demonstrating a high spatial resolution of 8.15 lp mm−1. The prepared ultra‐flexible scintillator screen can achieve excellent X‐ray imaging even after multiple bending and stretching, which can also provide clear non‐planar X‐ray imaging for irregular objects. In addition, the scintillator shows excellent stability in light, heat, X‐ray irradiation, and water. These results not only expand the optoelectronic application field of organic‐inorganic hybrid antimony halides but also promote the rapid development of efficient ultra‐flexible scintillators.

Highly Elastic Full Hydrocarbon Ultralong RTP Polymers with Visible Light Excitable S0→T1 Population

AbstractHighly elastic ultralong organic room temperature phosphorescence (RTP) polymers are highly desired in wearable optoelectronic fields, but they are hardly realized in rubbers since chain segment motions deactivate triplet excitons. In the current work, it is revealed that polystyrene (PS) can inhibit triplet thermal deactivation of coronene (Cor), and it is the serious oxygen diffusion and quenching that disables RTP emission of Cor/polymers. In view of oxygen barrier function of rubbers, PS−polyisoprene−PS tri‐block elastomers (SIS) are used as Cor's doping matrices. The results show that Cor/SIS sheets show bright and ultralong afterglow with RTP lifetime up to 3.64 s in air after brief 365 nm light excitation. More impressively, Cor/SIS and its red fluorescent dye doped sheets all exhibit ultralong room temperature afterglow under large dynamic elastic deformation. Further, all these sheets exhibit long‐wave blue light excited afterglow despite Cor/SIS having no visible light absorption band, and the unique photoexcitation and emission mechanism is verified. This work not only provides the development strategy of the latest elastic RTP materials, but also will evoke a fresh understanding on organic doped RTP polymers.

Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3

Atomic layer deposited (ALD) Al2O3 acting as gate dielectric and surface passivation is widely adopted in power electronics but seldom used in optoelectronic fields for its sophisticated and expensive technology. Herein, a simple but efficient Al2O3 passivation is used in the fabrication of InGaN/GaN visible-light (VL) polarization-induced self-depletion field effect phototransistors (FEPTs), for suppressing the surface leakage and recombination. The Al2O3 layer obtained by thermal oxidation (TO) of 2-nm-thick thermally evaporated metal Al shows high electrical insulation and even better passivation effect than the ALD-Al2O3. As a result, the dark current of TO-Al2O3 passivated device decreases by about 2 orders of magnitudes; meanwhile, the photoresponse increases by about 65%. Under a weak VL illumination of 6.8 μW/cm2, the InGaN/GaN FEPT exhibits a large photo-to-dark current ratio of 3.1 × 108 and an ultrahigh shot-noise-limited detectivity of 1.9 × 1018 jones. In addition, the FEPTs exhibit a strong wavelength selectivity with a 600 nm/400 nm spectral response rejection ratio exceeding 5 × 105. All these performances show huge potential in emerging VL applications that are limited by the insufficiencies of current Si photodetectors.

Distinguishing Inner and Outer-Sphere Hot Electron Transfer in Au/p-GaN Photocathodes.

Exploring nonequilibrium hot carriers from plasmonic metal nanostructures is a dynamic field in optoelectronics, with applications including photochemical reactions for solar fuel generation. The hot carrier injection mechanism and the reaction rate are highly impacted by the metal/molecule interaction. However, determining the primary type of reaction and thus the injection mechanism of hot carriers has remained elusive. In this work, we reveal an electron injection mechanism deviating from a purely outer-sphere process for the reduction of ferricyanide redox molecule in a gold/p-type gallium nitride (Au/p-GaN) photocathode system. Combining our experimental approach with ab initio simulations, we discovered that an efficient inner-sphere transfer of low-energy electrons leads to an enhancement in the photocathode device performance in the interband regime. These findings provide important mechanistic insights, showing our methodology as a powerful tool for analyzing and engineering hot-carrier-driven processes in plasmonic photocatalytic systems and optoelectronic devices.

Insight into interfacial dynamics of photogenerated carriers in Cs3Bi2I9/Au heterostructure nanocomposites for high-sensitivity broadband photodetection with negative photoconductivity

The negative photoconductivity (NPC) effect is becoming an increasingly significant factor in the development of next-generation optoelectronics. However, research in the field of NPC-dominated optoelectronics remains in its infancy and frequently encounters challenges related to fabrication complexity, slow photoresponse speed, instability, and a limited spectral response range. Herein, a Cs3Bi2I9/Au heterostructure nanocomposite was prepared via a simple self-assembly process utilizing electrostatic interactions with Au nanoparticles (NPs) and lead-free Cs3Bi2I9 nanoplates. The Cs3Bi2I9/Au nanocomposite-based photodetectors (PDs) demonstrate a broadband photoresponse (405–1550 nm), enhanced rise/fall times (27.2/40.0 µs), and reduced noise density (4.7 × 10−13 A/Hz1/2 at 1 Hz). In contrast to the positive photoconductivity (PPC) effect observed in colloidally synthesized Cs3Bi2I9 nanoplate-based PDs, the NPC can be attributed to the decrease in photocurrent under light illumination during the processes of recombination and trapping of photogenerated carriers induced by the incorporation of Au NPs. These findings are expected to provide valuable insights into achieving high-performance NPC-dominated PDs by regulating the dynamics of photogenerated carriers in perovskite heterostructures.

Van der Waals GeSe with Strain- and Gate-Tunable Linear Dichroism for Wearable Electronics.

The direct detection of light polarization poses a crucial challenge in the field of optoelectronics and photonics. Herein, the tunable linear dichroism (LD) in GeSe-based polarized photodetectors is presented through electronic and structural asymmetry modulation, and demonstrate their application prospects in wearable electronics. An improvement in the dichroic ratio up to 34% is achieved under a gate voltage of 20V, and the improvement reaches 44% by applying a tensile strain along the zigzag direction. Theoretical calculations reveal that the gate regulation of barrier height between GeSe and Au electrodes is responsible for the electrical-tunable LD, while the anisotropic optical absorption in response to strains leads to the strain-tunable LD. Moreover, flexible GeSe transistors are developed for wearable applications including motion sensors and glucose monitors. This study offers viable approaches for modulating the optical anisotropy of low-dimensional materials and emphasizes the versatility of van der Waals materials for practical applications in wearable electronic devices.

Application and Research Progress of Perovskite in the Field of Optoelectronic Materials

Perovskite refers to a class of materials with the formula of ABO3. These oxides were first discovered in calcium titanate compounds. Perovskite materials have attracted widespread attention in the field of contemporary photovoltaic research due to their excellent photovoltaic properties, heralding their potential as protagonists of a new generation of photovoltaic materials. Nevertheless, the stability of perovskite materials needs to be enhanced. In addition, reducing the toxicity of the materials is a key challenge in advancing their commercialization. Currently, the rapid development of perovskite in the field of optoelectronics and its unique combination of properties have laid a solid foundation for its position as a mainstream optoelectronic material of the future. Therefore, this work focuses on the properties and applications of perovskite optoelectronics. With deeper scientific research and technological innovation, perovskites have the potential to overcome existing limitations and move towards large-scale commercial production. In the future, the further application of perovskite optoelectronic materials would have far-reaching implications for the global energy transition and environmental protection.

Fluorescence by incoherently pumped polar quantum dot placed in a low-frequency monochromatic field

Abstract We studied spectral properties of high-frequency fluorescent radiation from a two-level quantum system with broken inversion spatial symmetry, which can be implemented as a model of a one-electron two-level asymmetric polar semiconductor quantum dot whose electric dipole moment operator has permanent unequal diagonal matrix elements. The case of the excitation of this system by incoherent pumping of some sort supplemented with an additional driving monochromatic field, which frequency is much lower than the optical transition frequency of the quantum dot, was considered. An analytical expression for the fluorescence spectrum as a function of the amplitude and frequency of the monochromatic driving field, as well as of the pumping intensity, was derived. We also discussed feasible practical applications of the effects under study in the field of quantum optics and optoelectronics for the generation of high-frequency radiation, possessing stationary equidistant spectrum, and for the control of the radiative properties of such nanodevices as spasers (dipole nanolasers).

Structural evolution and magnetic, optical, and optoelectronic properties changes in annealed Co0.5Sr0.5Fe2O4 nanoparticles: A comprehensive study

A sample of Co0.5Sr0.5Fe2O4 nanoparticles was synthesized by the coprecipitation technique to explore the effect of annealing on the structure and some physical properties of the produced material. The coprecipitated sample consists of an orthorhombic strontium carbonate phase and the required cubic Co0.5Sr0.5Fe2O4. Annealing at elevated temperatures (900 °C) leads to the formation of cubic and hexagonal phases. This crystal structure was confirmed by X-ray diffraction analysis (XRD). The accuracy of the cation distribution of the cubic phase determined from the Rietveld analysis of XRD patterns is demonstrated by matching the experimental and theoretical lattice constants. There are several noticeable changes in aspects as the annealing temperature goes up. The transmission electron microscopy (TEM) images indicated that heating substantially affects the growth and densification of the smaller nanoparticles. There is a drop in the longitudinal and transverse wave velocities, bulk, rigidity, Young's moduli, Poisson ratio (σ), and Debye temperature (θD) with annealing and grain growth. The saturation magnetization and coercive field are enhanced with annealing. The particle size distribution calculated from TEM is confirmed and supported by the switching field distribution. The indirect optical bandgap energy (Eg) decreased with annealing. The present study concentrated on the thermal treatment impacts on various optical parameters, such as the refractive index and extinction coefficient. The optoelectrical parameters, such as the dielectric constant, dielectric loss, and optical and electrical conductivity, were extensively investigated, giving valuable insights, and their results were interpreted. These findings suggest potential applications in magnetic storage, sensors, and optoelectronics fields.

Q-switched Nd: YAG Fundamental and Second Harmonic Wavelengths Impact on Preparing Nb2O5 Thin Films by a PLD Technique: A Comparative study

We aim to study and investigate the structural, optical, topographical, and morphological properties of Nb2O5 thin films deposited under vacuum Q-switched Nd: YAG pulsed laser for the first time to the best of our knowledge. The obtained results of this study can contribute in different fields of applications including the optoelectronic and biomedical fields. The fundamental (1064 nm) and the visible second harmonic (532 nm) wavelengths were utilized for this purpose. The laser energy was fixed at 657 mJ. The number of pulses and the substrate temperatures were 200 laser shots and 450 ºC, respectively. The observed X-ray diffraction patterns were assigned for T-Nb2O5 that refers to the orthorhombic and H-Nb2O5 which is related to the monoclinic phases supported by Raman spectra analyses. Nb2O5 thin film deposited by Nd: YAG fundamental wavelength (1064 nm) showed a thicker film, a higher surface roughness and, on average, a larger particles size It also provided better matching of the lattice d-spacing with the standard d-spacing obtained by JPCDs cards 00-030-0873 and 00-009-0372. The optical properties including the band gap values for both direct and indirect transitions were estimated with the lower gap was reported for the thin film prepared at the fundamental wavelength. The photoluminescence analyses supported that the transitions of both prepared films were indirect. FE-SEM clarified the surface morphology of each prepared film. The EDX analyses provided the elemental compositions and the purity of the Nb2O5 prepared films.

Valley-Hybridized Gate-Tunable 1D Exciton Confinement in MoSe2.

Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the quantum photonics and optoelectronics fields. Monolayers of transition metal dichalcogenides (TMDs) offer inherent 2D confinement and possess significant exciton binding energies, making them promising candidates for achieving electric-field-based confinement of excitons without dissociation. Exploiting the valley degree of freedom associated with these confined states further broadens the prospects for exciton engineering. Here, we show electric control of light polarization emitted from one-dimensional (1D) quantum-confined states in MoSe2. Building on previous reports of tunable trapping potentials and linearly polarized emission, we extend this understanding by demonstrating how nonuniform in-plane electric fields enable in situ control of these effects and highlight the role of gate-tunable valley hybridization in these localized states. Their polarization is entirely engineered through either the 1D confinement potential's geometry or an out-of-plane magnetic field. Controlling nonuniform in-plane electric fields in TMDs enables control of the energy (up to five times its line width), polarization state (from circular to linear), and position of 1D confined excitonic states (5 nm V-1).

Study of Luminescence Phenomena of Tb (III) Containing Fluroquinoline for Application in Optoelectronic Devices.

This study presents a series of six vivid green Tb(III) complexes, denoted by the general formula [Tb(L)3.secondary sensitizers], where L represents 1-cyclopropyl-7-(4-ethylpiperazin-1-yl)-6-fluoro-4-oxoquinoline-3-carboxylic acid and secondary sensitizers consist of heterocyclic N-donor aromatic systems. The synthesis of these complexes were achieved through a solvent-assisted grinding method, and their characterization involved various techniques such as CHN analysis, FTIR, NMR, UV, XRD, and NIR spectroscopy. These analyses confirmed the successful synthesis of complexes with coordination between the quinoline moiety and the metal ion. Photoluminescence studies were conducted in solid and solution phases, revealing excellent luminescence properties. The bright green color emitted by the complexes upon exposure to UV rays was attributed to the hypersensitive 5D4 → 7F5 transition. J-O analysis indicated an asymmetrical coordination environment around in the complexes. Additionally, various radiative properties (Ared, Anred, η, βexp, σs) and band gap values were determined, highlighting the potential applications of these complexes in diverse optoelectronic fields. Chromaticity evaluation demonstrated high color purity in both solid and solution phases. Furthermore, the CCT value identified the solid complexes as a cool light source. Overall, the analyses supported the exceptional luminosity of synthesized complexes, positioning them as promising luminescent materials for a wide range of devices.

In-situ and ex-situ preparation of Bi2S3 on the BiVO4/TiO2 to construct Bi2S3/BiVO4/TiO2 heterojunction for efficient Cr(VI) reduction

The environmentally friendly and rapid removal of hexavalent chromium (Cr(VI)) from wastewater has garnered significant attention, driven by the severe acute toxicity and carcinogenic properties associated with Cr(VI). The design and synthesis of heterojunctions are recognized as effective solutions for enhancing the photocatalytic performance of TiO2 based materials. BiVO4/TiO2 and Bi2S3/BiVO4/TiO2 composite films (BVT) were prepared via a simple hydrothermal method. The influence of Bi2S3 preparation methods (In-situ and Ex-situ) on the morphology, structure and properties of BVT was studied. The relative crystallinity of TiO2, BiVO4/TiO2, BVT(In-situ) and BVT(Ex-situ) were 50 %, 62 %, 72 % and 92 %, respectively. SEM shows that the morphology of Bi2S3 in BVT(In-situ) was nanoribbon and that of Bi2S3 in BVT(Ex-situ) was radioactive sphere. Compared with pure TiO2 and BiVO4/TiO2, the light absorption range of BVT composite material has been expanded from the ultraviolet light region to the visible region, the bandgap has been significantly narrowed, and the photocurrent density has been increased. The BVT(In-situ) shows stronger photoelectrical performance and reduction efficiency of Cr (VI) compared to BVT(Ex-situ), reaching 93.9 %. The photocatalytic reaction rate of BVT(In-situ) and BVT(Ex-situ) are 0.0291 min−1 and 0.0266 min−1, respectively. Density functional theory (DFT) calculations indicate that the work function of BiVO4 is higher than that of Bi2S3, and electrons will transfer from Bi2S3 to BiVO4 at the heterojunction interface. The BVT(In-situ) heterojunction constructed in this experiment greatly improves the separation and transport efficiency of photo-generated carriers, laying the foundation for the wide application of BVT heterojunction in the field of optoelectronics and providing a strategy for photocatalytic reduction of Cr(VI). The BVT(In-situ) with FTO conductive glass, it also can be applied to photovoltaic fields such as solar cells, photocatalysis and photodetectors.

Antithermal-Quenching All-Inorganic Perovskite Crystals with Green Ultralong Persistent Luminescence for Advanced Anticounterfeiting Applications.

Long persistent luminescence (PersL) materials have revolutionized many fields of optoelectronics and photonics due to their applications in anticounterfeiting, information encryption, and in vivo bioimaging. Here, we reported a novel PersL crystal prepared by the heterovalent doping of Sb3+ into perovskite tetragonal phase RbCdCl3, comparing with the pristine non-perovskite orthorhombic phase analogue without PersL property. Surprisingly, under the UV light irradiation, the title crystals concurrently exhibit green ultralong PersL (>2400 s), high photoluminescence quantum yield (49.1%), and antithermal quenching in the range from 148 to 328 K. It was revealed by experimental results and theoretical analyses that green ultralong PersL and antithermal quenching of perovskite-phase RbCdCl3/Sb3+ crystals originate from the electron transition between the 5s2 level of the dopant Sb3+ and the electronic defect-induced trap states. Enlightened by the excellent optical properties, the tetragonal perovskite-phase RbCdCl3/Sb3+ PersL materials show promising application prospects in anticounterfeiting and encryption of information.

Triplet Energy Gap‐Regulated Room Temperature Phosphorescence in Host‐guest Doped Systems

The organic room temperature phosphorescence (RTP) materials via host‐guest doped method receive considerable attention in the fields of optoelectronics, bioimaging, and information encryption. Despite many host‐guest doped materials with excellent RTP properties have been developed, their luminous mechanism is still limited. Here, a series of host‐guest doped materials, using Benzophenone as the host and quinone compounds as the guests, were constructed to investigate the effect of the triplet energy gap (ΔET) between the host and guest on triplet states population. The guest’s triplet state is proposed to be a “triplet energy reservoir”, gathering the triplet excitons to emit RTP when ΔET is large and returning triplet excitons to the host when ΔET is small. By combining the results of steady‐state and delayed emission spectra, time‐resolved transient absorption, and theoretical calculations, A bidirectional energy transfer process is proved, which are triplet‐triplet energy transfer and reverse triplet‐triplet energy transfer processes. The thermal equilibrium of these two energy transfer processes can be regulated by the ΔET and temperature. The potential applications of these RTP properties are also realized in data encryption and anti‐counterfeiting. This work provides valuable insight into the design of host‐guest doped materials based on energy transfer mechanisms.

Triplet Energy Gap-Regulated Room Temperature Phosphorescence in Host-guest Doped Systems.

The organic room temperature phosphorescence (RTP) materials via host-guest doped method receive considerable attention in the fields of optoelectronics, bioimaging, and information encryption. Despite many host-guest doped materials with excellent RTP properties have been developed, their luminous mechanism is still limited. Here, a series of host-guest doped materials, using Benzophenone as the host and quinone compounds as the guests, were constructed to investigate the effect of the triplet energy gap (ΔET) between the host and guest on triplet states population. The guest's triplet state is proposed to be a "triplet energy reservoir", gathering the triplet excitons to emit RTP when ΔETis large and returning triplet excitons to the host when ΔETis small. By combining the results of steady-state and delayed emission spectra, time-resolved transient absorption, and theoretical calculations, A bidirectional energy transfer process is proved, which are triplet-triplet energy transfer and reverse triplet-triplet energy transfer processes. The thermal equilibrium of these two energy transfer processes can be regulated by the ΔETand temperature. The potential applications of these RTP properties are also realized in data encryption and anti-counterfeiting. This work provides valuable insight into the design of host-guest doped materials based on energy transfer mechanisms.

Monolithic integration of waveguide amplifiers and passive polymer photonic devices using photolithography

The monolithic integration of rare-earth-doped waveguide amplifiers with passive photonic devices has long been a subject of extensive research. Herein, we propose a method for active-passive monolithic integration based on polymer photonic integrated devices. The monolithic integration of passive devices with active waveguide amplifiers is achieved by spin-coating an active layer atop a passive polymer waveguide and subjecting specific regions of the active layer to selective photolithography. To validate the proposed monolithic integration scheme's impact on the performance of passive devices, performance tests were conducted on both passive and active-passive integrated 8-channel arrayed waveguide grating (AWG) devices. The crosstalk (CT) of the AWG devices before and after adding the active layer ranged from −12.04 dB to −14.72 dB and from −10.02 dB to −14.88 dB, respectively, with channel spacings of 9.29 nm and 8.80 nm, indicating consistent performance of the passive devices with the addition of the active layer. In a 0.5 cm-long active waveguide, internal net gain was achieved across all eight channels of the AWG, with a gain bandwidth ranging from 1518 nm to 1580 nm. Notably, an internal net gain of 9.5 dB was attained at 1527 nm. The successful integration of rare-earth-doped waveguide amplifiers with passive components on a monolithic chip has been achieved for the first time, requiring only two straightforward photolithography steps. This milestone not only preserves the inherent functionality of passive components but also enables effective signal amplification. This technological innovation holds the promise of fully harnessing the potential of rare-earth-doped waveguide amplifiers in the realm of photonic integrated circuits, thereby catalyzing significant breakthroughs and advancements in the field of optoelectronics.

Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives

Abstract During the past decades, high-performance devices and setups have been widely used in the fields of precision optics, semiconductors, microelectronics, biomedicine, optoelectronics and aerospace. It is a challenge to achieve ultralow surface roughness free of damages. Due to the unique physicochemical properties of rare earths, ceria has garnered great progresses for atomic surfaces induced by chemical mechanical polishing. Compared with conventional mechanical removal by alumina and silica, rare earth abrasives achieve selective material removal on surface via their special chemical activity, without introducing microscopic scratches and defects. Nevertheless, polishing performance of rare earth abrasives depends on series of factors, e.g. size of abrasive particles, microscale topological structure, configuration of chemical slurry, auxiliary energy fields etc. As a result, it is significant to conduct a comprehensive review to understand state-of-the-art polishing technologies. This review summarizes the effect of polishing slurries composed of different rare earth abrasives on polishing performance under different conditions. Additionally, various energy-assisted polishing strategies are discussed using diverse kinds of rare earth abrasives for distinct polishing forms. Finally, future directions of polishing on rare earth abrasives are addressed.

3D/2D lead-free halide perovskite CsSnBr3/MoX (X = Se2, SSe, S2) heterostructures for high-efficiency solar cell: Interface engineering strategies and transition of band alignments

The rapid progress in the fabrication of van der Waals (vdW) heterostructures based on perovskite has significantly advanced the fields of optoelectronics and solar cells by integrating the exceptional properties of different materials. Overall, perovskite-based vdW heterostructures display unique functional characteristics due to their varied type-I, type-II, and type-III energy band configurations. However, it is a challenge to achieve flexible regulation of band edge alignment in heterostructures for different applications. Using first-principles density functional theory, we systematically study the electronic and optical properties of vdW heterostructures system consisting of three-dimensional lead-free all-inorganic halide perovskite materials CsSnBr3 and MoX (X = Se2, SSe, S2). The research results show that in the CsSnBr3/MoX vdW heterostructures, type I, II, and III transitions of band arrangements are achieved through interface engineering strategy to adapt to different applications. Meanwhile, by calculating the light absorption efficiency of the constructed 3D/2D vdW heterostructures, it was found that the interface effect enhances the optical absorption range and intensity of the perovskite-based heterostructures. The theoretically estimated power conversion efficiency (PCE) of the heterostructure thin-film solar cell reaches 21.4 %. The results of our research indicate that the controllable band alignment of CsSnBr3/MoX heterostructures has significant potential for future applications in optoelectronics.

Roles of defects in perovskite CsPbX3 (X=I, Br, Cl): a first- principles investigation

Inorganic lead halide perovskite CsPbX3 (X=I, Br, Cl) have a promising application in optoelectronic fields due to their excellent photovoltaic properties. The defects, which have a significant impact on the performance of materials, are often introduced during the synthesis process. However, there is still a lack of systematic theoretical investigation of the effects of these defects. In this study, the effects of vacancies and H-atom interstitial point defects on the structural, electronic and optical properties of CsPbX3 are systematically investigated by using first-principles approach based on density-functional theory. The calculated results show that the introduction of different defects have significantly effect on the band gap, effective mass, semiconductor properties, ion migration and optical absorption coefficient of the perovskite materials. It is also found that VCs and VPb defects introduce shallow transition levels that do not negatively impact the optoelectronic properties. However, VX and interstitial H defects generate deep transition levels within the bandgap, which acts as non-radiative recombination centers and reduce the optoelectronic performance of the perovskite material. This study contributes to the understanding of the nature of halide chalcogenides and optimally regulating the performance of optoelectronic devices.