The authors present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon suboxide doped with Er3+ (a-SiOx⟨Er⟩) layers with silicon nanoclusters (Si-NC). Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx⟨Er⟩ matrix was deposited by reactive rf cosputtering. Second, an extra pump channel (I15∕24 to I9∕24) of Er3+ was created due to Si-NC formation on the same a-SiOx⟨Er⟩ matrix via a hard annealing at 1150°C. The SiO2 and the a-SiOx⟨Er⟩ thicknesses were designed to support resonances near the pumping wavelength (∼500nm), near the Si-NC emission (∼800nm) and near the a-SiOx⟨Er⟩ emission (∼1550nm) enhancing the optical pumping process.