Results of infrared measurements made at 300 and 80 °K are given for samples of ZnTe which were Be doped either during crystal growth or by ion implantation. The local mode frequency for BeZn, Be substitutional on the Zn sublattice, is in agreement with the previously measured frequency and with theory. Comparison of spectrochemical analyses with optical data indicates that in the melt−doped samples [Be]≫[BeZn]. The ion−implanted sample was annealed isochronally in 100 °K steps from 373 to 773 °K with no appreciable change in the integrated absorption of the BeZn band indicating no substantial change in [BeZn]. The linewidth decreases with annealing but is significantly larger than that observed in melt−doped material. Raman local−mode measurements were unsuccessful. Previously reported Raman scattering measurements of other ion−implanted materials show damage−induced line broadening of the optical phonon bands. However, no change in optical phonon linewidths is observed in ZnTe after Be implantation.