Optical Figure Research Articles

Post-treatment optimization for silver nanowire networks in transparent droplet-based TENG sensors

Transparent conducting electrodes (TCEs) serve as essential components in various devices, including smart windows, thin film heaters, and sensors. Historically, indium tin oxide (ITO) thin films have served as the primary TCE material. However, the scarcity of indium in the Earth’s crust and costly vacuum-based deposition processes have prompted researchers to seek alternatives. While silver nanowire (Ag NW) networks have emerged as the leading candidate for TCEs among various alternatives, the presence of polyvinyl pyrrolidone (PVP) layer surrounding Ag NWs often leads to substantial contact resistances at the junction areas. Given the diverse characteristics of Ag NWs, including length, diameter, PVP thickness, and deposition methods, the efficacy of a specific post-treatment method on the same Ag NW batch remained unknown. This work collected effective post-treatment methods from existing literature and innovatively developed in-house approaches to optimize the treatment of Ag NW networks. Following post-treatment, the resulting electrodes exhibited a 70 % reduction in sheet resistance, with only a marginal 1 % decrease in optical transmittance. The optical figure of merit (FoM) for the optimized networks showed a remarkable five-fold improvement, rising from 66 to 305. The optimized Ag NW networks were then utilized as current collectors in water droplet-based TENG sensors, showcasing the device's effectiveness in pH and chemical concentration sensing. The fabricated TENG recorded peak Voc and Isc values of 22 V and 370 nA, respectively. Furthermore, we developed a sensor-integrated device capable of gauging the incident droplets’ pH level, signaling acid rain safety. In addition, the droplets activate a large-area Ag NW-based transparent thin film heater. Rapid defogging and defrosting capabilities of the heater was also demonstrated. The device holds the potential to be applied to the side-view mirrors of cars, providing an anti-fogging display for a significantly safer journey.

Arylazopyrazole-modulated stable dual-mode phototransistors.

High-performance organic devices with dynamic and stable modulation are essential for building devices adaptable to the environment. However, the existing reported devices incorporating light-activated units exhibit either limited device stability or subpar optoelectronic properties. Here, we synthesize a new optically tunable polymer dielectric functionalized with photochromic arylazopyrazole units with a cis-isomer half-life of as long as 90 days. On this basis, stable dual-mode organic transistors that can be reversibly modulated are successfully fabricated. The trans-state devices exhibit high carrier mobility reaching 7.4 square centimeters per volt per second and excellent optical figures of merit, whereas the cis-state devices demonstrate stable but starkly different optoelectronic performance. Furthermore, optical image sensors are prepared with regulatable nonvolatile memories from 36 hours (cis state) to 108 hours (trans state). The achievement of dynamic light modulation shows remarkable prospects for the intelligent application of organic optoelectronic devices.

Extension for “Consistent Optical and Electrical Noise Figure”

Extension for “Consistent Optical and Electrical Noise Figure”

First principles investigation on optoelectronic and thermoelectric response of nitrides cadmium novel zintl compounds AB2C2 (A=Mg, Ca, Sr, Ba; B = Cd and C= N)

Novel materials for high efficiency advance devices are critical to investigate. Zintl compounds are widely explored in the recent years because of their direct narrow band gaps, higher optical conductivity and figure of merit required for optimal-optoelectronic and thermoelectric response respectively. Thus, in the current study, the structural, electronic, optical and thermoelectric properties of nitrides cadmium novel Zintl compounds AB2C2 (A=Mg, Ca, Sr, Ba; B=Cd and C= N) having trigonal structure are studied by full potential linearized augmented plane wave method based on density functional and Boltzmann transport theory. The main objective of this project is to provide novel thermo electrical data on Cd-based Zintl compounds, such as nitride cadmium-based compounds. To get the desire results, the exchange correlations with generalized gradient approximation were used to obtain the ground state structure parameters in these compounds. The computed lattice parameters and c/a -ratio increase from the top to down while the bulk-modulus B(GPa) decreases from top to bottom. The modified versions of the Beck-Johnson potential (TB-mBJ) predict that CaCd2N2, SrCd2N2, BaCd2N2 and MgCd2N2 compounds are semiconductors with narrow band gap of 0.18 eV, 0.21 eV, 0.84 eV and 0.07 eV respectively. Based on the optical properties a deep analysis of dielectric constant, refractive index, reflectivity and optical conductivity were carried. Across the entire temperature range, all the compounds exhibit a positive Seebeck coefficient, indicating P-type conduction. The direct energy band gap nature of these compounds with high conductivity in the visible region shows their suitability for optical applications. Also, the figure of merit of these compounds is close to unity which also speaks about the high efficiency for thermoelectric applications.

Retina-inspired organic neuromorphic vision sensor with polarity modulation for decoding light information

The neuromorphic vision sensor (NeuVS), which is based on organic field-effect transistors (OFETs), uses polar functional groups (PFGs) in polymer dielectrics as interfacial units to control charge carriers. However, the mechanism of modulating charge transport on basis of PFGs in devices is unclear. Here, the carboxyl group is introduced into polymer dielectrics in this study, and it can induce the charge transfer process at the semiconductor/dielectric interfaces for effective carrier transport, giving rise to the best device mobility up to 20 cm2 V−1 s−1 at a low operating voltage of −1 V. Furthermore, the polarity modulation effect could further increase the optical figures of merit in NeuVS devices by at least an order of magnitude more than the devices using carboxyl group-free polymer dielectrics. Additionally, devices containing carboxyl groups improved image sensing for light information decoding with 52 grayscale signals and memory capabilities at an incredibly low power consumption of 1.25 fJ/spike. Our findings provide insight into the production of high-performance polymer dielectrics for NeuVS devices.

Switching and photosensitive analysis of dopingless tunnel field effect transistor based on cladding layer concept

— In this paper, the switching and photo sensing analysis of cladding layer based dopingless Tunnel FET (CDL-TFET) has been examined under visible range of spectrum. Initially, the impact of cladding layer in DL-TFET on electrical parameter is observed by varying the source material and thickness of source region. Furthermore, CDL-TFET is used for photo sensing application under the light state at various wavelength of light incident. The various optical figure of merits (FoMs) like spectral sensitivity (Sn), Signal to noise ratio (SNR), Responsivity (R), and quantum efficiency (η) is extracted to realize the behavior of photosensor. The maximum value of Sn is 48, R of 0.74 (A/Watt), SNR of 68.8 dB, and η of 3 are obtained at λ = 300 nm. Further, impurity trap charge effects are also observed at the interface and bulk of TFET. Finally, a comparison table has been presented to signify the importance of cladding layer based DL-TFET photo sensor with existing literature.

Distance-based generation of a unicursal random path on a non-grid point set for optical polishing.

In modern ultra-precision polishing, sub-aperture technologies are prone to mid-spatial frequency errors due to identical patterns of a path. A random tool path on a regular point set is widely used to suppress mid-spatial frequency errors. In this study, two non-grid uniform point sets, the Fibonacci and the three-directional, were introduced into optical polishing. To solve the time-consuming problem caused by a large amount of distance calculation, a distance-based weighted random (DBWR) algorithm and a linear programming and connecting (LPC) algorithm were presented. The DBWR algorithm reduces the generation time by strengthening the weight of the neighboring points in a specific direction, while the LPC algorithm adjusts the order and distance of points artificially. Then a random stitching method was proposed for the large-scale point set applying to large-sized optical surfaces, which dramatically reduced the generation time. Finally, experiments validated that the algorithms for non-grid sets can be effectively used for optical surface figuring without introducing an apparent mid-spatial frequency.

Effect of Postdeposition Heat Treatment on the Nanoplasmonic Behavior of Glancing Angle‐Deposited Silver Nanostructures

Postdeposition heat treatment‐induced modifications of nanoplasmonic response in glancing angle‐deposited (GLAD) Ag nanostructures are systematically investigated. The as‐deposited GLAD Ag thin films are annealed at various temperatures namely 200, 250, 300, and 350 °C in air atmosphere. The reduction in localized surface plasmon resonance (LSPR) absorption peak width is detected with annealing. Morphological characterization of the as‐deposited and annealed films reveals reduction in grain size and shape distributions responsible for narrowing of the LSPR peak width. The refractive index sensitivities of the as‐deposited and annealed films are measured using an in‐house‐developed optical setup and figure of merit (FOM) of the sensors is also estimated. An increase in FOM of the sensors is observed upon annealing while sensitivity is found to be reduced. E‐field profile surrounding the Ag nanoparticles is also simulated to explain the experimental observations on refractive index sensitivity of the films.

Electronic, optical and huge figure of merit of MnFeTe Heuslerene

Based on the density functional theory (DFT) calculations, the structural, electronic, optical and thermoelectric properties of the MnFeTe Heuslerene compound have been investigated. The total energy change curve in terms of volume refers to the ground state point and equilibrium volume. By applying mBJ approximation, this compound has perfect half-metallic behavior of 100% spin polarization at the Fermi level with 7[Formula: see text] magnetic moment. Optical calculations show that the semiconductor behavior with an optical absorption gap occurred by incident light perpendicular to the MnFeTe Heuslerene plane. The figure of merit coefficient (ZT) has reached 3.5 at 50[Formula: see text]K temperature, which makes it an excellent candidate for thermoelectric applications. Also, the power factor (PF) of this compound has reached its maximum value at room temperature.

Tetrachromatic vision-inspired neuromorphic sensors with ultraweak ultraviolet detection

Sensing and recognizing invisible ultraviolet (UV) light is vital for exploiting advanced artificial visual perception system. However, due to the uncertainty of the natural environment, the UV signal is very hard to be detected and perceived. Here, inspired by the tetrachromatic visual system, we report a controllable UV-ultrasensitive neuromorphic vision sensor (NeuVS) that uses organic phototransistors (OPTs) as the working unit to integrate sensing, memory and processing functions. Benefiting from asymmetric molecular structure and unique UV absorption of the active layer, the as fabricated UV-ultrasensitive NeuVS can detect 370 nm UV-light with the illumination intensity as low as 31 nW cm−2, exhibiting one of the best optical figures of merit in UV-sensitive neuromorphic vision sensors. Furthermore, the NeuVS array exbibits good image sensing and memorization capability due to its ultrasensitive optical detection and large density of charge trapping states. In addition, the wavelength-selective response and multi-level optical memory properties are utilized to construct an artificial neural network for extract and identify the invisible UV information. The NeuVS array can perform static and dynamic image recognition from the original color image by filtering red, green and blue noise, and significantly improve the recognition accuracy from 46 to 90%.

Spectrally multiplexed Hong-Ou-Mandel interference with weak coherent states.

We explore the suitability of a virtually imaged phased array as a spectral-to-spatial mode-mapper (SSMM) for applications in quantum communication such as a quantum repeater. To this end, we demonstrate spectrally resolved Hong-Ou-Mandel (HOM) interference with weak coherent states (WCSs). Spectral sidebands are generated on a common optical carrier, and WCSs are prepared in each spectral mode and sent to a beam splitter followed by two SSMMs and two single-photon detectors, allowing us to measure spectrally resolved HOM interference. We show that the so-called HOM dip can be observed in the coincidence detection pattern of matching spectral modes with visibilities as high as 45% (maximum 50% for WCSs). For unmatched modes, the visibility drops significantly, as expected. Due to the similarity between HOM interference and a linear-optics Bell-state measurement (BSM), this simple optical arrangement figures as a candidate for the implementation of a spectrally resolved BSM. Finally, we simulate the secret key generation rate using current and state-of-the-art parameters in a measurement-device-independent quantum key distribution scenario and explore the trade-off between rate and complexity of a spectrally multiplexed quantum communication link.

Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor

This study investigates a highly sensitive and low-power photosensor using a pocket-based charge plasma tunnel field-effect transistor (PCPTFET) structure for visible light detection. Here, zinc oxide, the transparent optical region over the channel, is the catalyst for the photo-sensing operation. When light strikes the sensitive portion of the device, creating optical charge carriers in the illumination region and substantially increases the device’s conductance. The analysis of various parametric and structural variations like intensity power density (Pj ), optical wavelength (λ), drain to source voltage (V DS), incident angle (θ), and silicon body thickness (t si) have been investigated for the reported pocket-based charge plasma TFET (PCPTFET) photosensor. Further, the PCPTFET’s superior performance as a highly sensitive photosensor is revealed by comparing the several optical figures of merit (FOM) with conventional tunnel field-effect transistor. The reported photosensor provides much-improved responsivity (R) of 1.52 A W−1 and quantum efficiency (η) of 4.96.

Analysis of the Impact of Wavelength-Dependent Physical Impairments Considering a Multiband Elastic Optical Network

In this paper, we analyze the impact of wavelength- dependent physical impairments, specifically the optical fiber attenuation coefficient (α) and the optical amplifiers noise figure (NF), considering S, C and L bands in a multiband elastic optical network. The calls blocking probability and the distribution of modulation formats among the network accepted calls were used as evaluation metrics. The results obtained for the use of G-652.A optical fiber show that using α and NF with fixed values underestimates the most realistic scenario (α and NF dependent on wavelength). For the use of G-652.D optical fiber, it was possible to obtain a reduction of approximately 63.41% for S band, 95.60% for C band and 98.84% for L band, in terms of calls blocking probability, when the most realistic scenario was compared with the scenario most used in the literature (α and NF with fixed values). In addition, it was verified that, with the most realistic scenario, it was possible to obtain the distribution of more efficient modulation formats using the G-652.D optical fiber with C band.

Consistent Optical and Electrical Noise Figure

The optimum noise figure of an electrical amplifier is <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_e</i> = 1 and the optimum traditional noise figure of an optical amplifier is <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_pnf</i> = 2. This irresolvable conflict is due to the fact that <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_e</i> measurement requires electrical powers, proportional to squared amplitudes (voltages), while <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_pnf</i> measurement requires squares and variances of photocurrents, proportional to 4th powers of amplitudes (fields). In line with this an electrical receiver can receive I&Q parts of an electric carrier while a direct-detection photoreceiver can detect only power and not phase of an optical carrier. Optical amplifiers cause Gaussian field noise. Photodetection causes shot noise. Spontaneous-spontaneous beat noise in direct detection is taken into account by negative binomial or chi-squared photoelectron distributions, without errors of a Gaussian approximation. Coherent receivers linearly sense the Gaussian field noise. The sensitivity of an ideal coherent I&Q receiver is not degraded if it gets an ideal optical preamplifier, while the corresponding <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_pnf</i> = 2 suggests degradation. Coherent I&Q or heterodyne receivers have electrical output powers proportional to squared amplitudes (fields). This way one has the same metric in electrical and optical domain. One gets an optical noise figure <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_o</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,</sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">_IQ</i> . For large amplifier gain it is <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_pnf</i> /2. In an ideal amplifier, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_o</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,</sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">_IQ</i> = 1. For true optical homodyne receivers and for direct detection receivers with Gaussian approximation it can be converted into <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_pnf</i> and vice versa. Phase-sensitive amplifiers are also covered. With <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_e</i> and the I&Q optical noise figure <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F_o</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,</sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">_IQ</i> a consistent unified noise figure is derived, valid and usable in electrical and optical domain.

Next-generation active telescope for space astronomy

We present a design for an active telescope for space astronomy. The telescope is capable of both exoplanet work and general astronomy over wavelengths from ∼100 nm up to 5 μm. The primary mirror is 6 m in diameter, formed by 16 mirror segments that are precisely phased and supported on rigid body actuators and with segment optical surface figures fine-tuned using surface figure actuators. The active primary forms a large deformable mirror (DM) with wavefront error (WFE) correction at the entrance pupil. Thus the largest source of WFE can be removed at the source and is corrected over the entire field of view. This enables diffraction-limited performance at 400 nm and a more efficient optical system over a broader wavelength range than could be achieved by a small DM at a downstream relayed pupil. The telescope is passively cooled to below 100 K at Sun–Earth L2, enabling astronomical-background-limited observations out to 5 μm. Launched on a SpaceX Starship or alternatively National Aeronautics and Space Administration’s Space Launch System, the telescope requires minimal deployments. A 72-m-diameter starshade provides a contrast ratio better than 10 − 10 for exoplanet science. Near the visible region, with a 108% working bandwidth from 300 to 1000 nm, a working distance of 120 Mm provides a 51-mas inner working angle (IWA). This band can be moved to shorter or longer wavelengths by adjusting the starshade range from the telescope. Our first-ever thermal analysis of such a starshade shows that a temperature below 100 K can be achieved over a broad range of observing directions, permitting the possibility of working into the infrared. We model the yield in exoplanets that can be observed. A starshade and associated spectrograph offer significant advantages for exoplanet characterization. They enable a much broader instantaneous spectral bandwidth (here 108%) than current coronagraphs (∼10 % to 20% bandwidth), allow both polarizations to be observed simultaneously, and have higher throughput. The IWA is twice as small as can be achieved with a coronagraph and there is no outer working angle. These differences are particularly pronounced in the UV, where coronagraph performance would be strongly affected by throughput losses, wavefront aberrations, Fresnel polarization effects at surfaces, and thermal instability.

Effect of Cerium dopant on third-order nonlinear optical properties of CdS/PEG self-standing nanocomposite films

CdS/PEG, 4 and 7 mol% Ce doped CdS/PEG nanocomposite films were synthesized by in situ method. The XRD pattern confirmed the cubic structure of the CdS and the size of the CdS nanocrystallite is found to be smaller than the Bohr exciton radius for all the samples. SEM analysis shows that CdS and Ce doped CdS nanoparticles are well mono-dispersed in PEG polymer. FTIR spectra confirm the interaction of Ce-doped CdS nanoparticles with PEG polymer. UV–Vis optical absorption studies exhibit a red-shift of CdS nanoparticle with Ce doping. The photoluminescence spectra of all the films show a red emission due to the surface defects. The third-order nonlinear optical properties of all the films have been studied using the Z-scan technique. Closed and open aperture Z-scan plots show self-focusing optical nonlinearity and reverse saturable absorption with positive nonlinear coefficients. The 7 mol% Ce doped CdS/PEG nanocomposite film exhibits the highest value of nonlinear refractive index and nonlinear absorption coefficient which are about 1.649 × 10−9 m2/W and 7.149 × 10−3 m/W. The third-order nonlinear optical susceptibility and figure of merit have also been estimated for all the films and also increase with increase in Ce dopant concentrations. The maximum value of third-order nonlinear optical susceptibility and figure merit are found for 7 mol% Ce doped CdS/PEG nanocomposite film and are about 9.882 × 10−4 esu and 5.902 × 10−8 esu m. The present study strongly recommends that the Ce doped CdS/PEG nanocomposite films are worthy candidates for fabricating the future optical limiting devices.

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

This work investigates the effectiveness of a single gate SiGe/Si heterostructure tunnel field-effect transistor (SGHTFET) as a photosensor in the visible spectrum. A transparent zinc oxide (ZnO) layer is used as the optical region over the channel for sensing the incident light. When light impinges on the gate catalyst and creates optical charge carriers in the illumination region, the conductance of the device considerably rises and, consequently, the subthreshold current changes. For the suggested photosensor, the effect of varying drain-to-source voltage (VDS), germanium mole fraction (x), and silicon film thickness (tsi) on the sensor performance are investigated. The sensor offers enhanced sensitivity performance as compared to the traditional TFET in terms of several optical figures of merit (FOMs) such as available photocurrent, responsivity, quantum efficiency, sensitivity, and SNR, and can therefore be utilized as an efficient photosensor. The reported sensor has a peak responsivity (R) of 2.23 A W−1 and quantum efficiency (η) of 7.31 at a wavelength (λ) of 450 nm.

Bandlike Transport in FaPbBr3 Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity.

Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr3 perovskite quantum dot (QD) phototransistor with bandlike charge transport and measure a dark hole mobility of 14.2 cm2 V-1 s-1 at ambient atmosphere. Attaining both high mobility and good optical figures of merit, a detectivity of ∼1016 Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All of these important properties are superior to most advanced inorganic semiconductor phototransistors, indicating a promising future in optoelectronic applications.

Enhanced scratch resistance of silver nanowire electrodes using a polyether acrylate and silica composite overcoating

• AgNWs were coated with polyether acrylate resin and silica composite (PAR). • PAR coating increased scratch resistance of AgNW electrodes. • No significant degradation of optical and electrical properties of AgNWs was observed. Silver nanowires (AgNWs) are a promising electrode material for next-generation flexible/wearable electronics; however, the industrial use of AgNWs is limited owing to their poor resistance to scratch damage. In this study, a UV-curable polyether acrylate resin and silica composite (PAR) was adopted as an overcoating material on the AgNW electrodes to improve the scratch resistance. The simple formation of PAR overcoating on the AgNW electrodes was possible because of its UV-curable characteristics. In addition, nanoscale silica particles in PAR blocked the penetration of the scratching tip through PAR overcoating, thereby protecting the AgNWs from scratch damage. The PAR-coated AgNW electrodes showed excellent scratch resistance, with no significant degradation in optical transmittance, sheet resistance, and figure of merit. The strategy of using UV-curable PAR composite overcoating will accelerate the actual usage of AgNW electrodes in flexible electronics.

Ultraviolet Sharp High-Order Magnetic Plasmon Based Fano Resonance of 3D Metamaterials

We theoretically study the ultraviolet sharp Fano resonances (FRs) produced through the optical diffraction coupling between the narrow collective surface mode supported by the array periodicity and the broad high-order magnetic plasmon (MP) mode in the three-dimensional (3D) metamaterials consist of aluminum vertical split-ring resonator (Al 3D-SRR) array. The linewidth of the second-order MP induced ultraviolet FR is as narrow as 7.3 nm due to the diffraction coupling feature of the magnetic fields. The intensity and position of the ultraviolet sharp FR are easily tuned by varying the array period as well as the base and arm length of the Al 3D-SRR structure. The conventionally defined performance index of optical sensors, sensitivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$S$ </tex-math></inline-formula> ) and figure of merit ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FoM</i> ) of our designed 3D metamaterial in the ultraviolet range, possess quite large values of 88 nm/RIU and 12, respectively.