Abstract
This study investigates a highly sensitive and low-power photosensor using a pocket-based charge plasma tunnel field-effect transistor (PCPTFET) structure for visible light detection. Here, zinc oxide, the transparent optical region over the channel, is the catalyst for the photo-sensing operation. When light strikes the sensitive portion of the device, creating optical charge carriers in the illumination region and substantially increases the device’s conductance. The analysis of various parametric and structural variations like intensity power density (Pj ), optical wavelength (λ), drain to source voltage (V DS), incident angle (θ), and silicon body thickness (t si) have been investigated for the reported pocket-based charge plasma TFET (PCPTFET) photosensor. Further, the PCPTFET’s superior performance as a highly sensitive photosensor is revealed by comparing the several optical figures of merit (FOM) with conventional tunnel field-effect transistor. The reported photosensor provides much-improved responsivity (R) of 1.52 A W−1 and quantum efficiency (η) of 4.96.
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