Abstract
The steep doping profile associated with conventional Tunneling Field Effect Transistor (TFET) provides significant hindrances from a fabrication perspective despite the obvious merits of the device. Junctionless TFET (JL-TFET) alleviates the problem considerably by introducing a uniform doping profile across the device. In this study, we have looked at several device parameters like gate insulator dielectric constant, gate insulator thickness, silicon body thickness, doping level, and work function of P-gate and source which affect the performance of the device. The analysis is done based on the impact of parameters on subthreshold swing (SS), on-current to off-current ratio (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ), and threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ). The influence of certain parameters on on-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ) has also been looked at. These have enabled us to identify how the tuning of parameters could lead to peak device performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
