Optical Deformation Potential Research Articles

Electron mobility in n-InSb from 77 to 300K

The temperature dependence of the Hall coefficient RH, and conductivity sigma of n-InSb in the range 77-300K has been determined using the Van der Pauw technique. The experimental values of the Hall mobility are analysed in the relaxation time approximation for both the parabolic and non-parabolic cases, considering electron scattering by ionized impurities, polar optical phonons and acoustic deformation potential. The influence of electron-electron scattering on polar optical and ionized impurities has also been studied.

Electron scattering in cadmium sulphide crystals

In this paper an analysis of the lattice limited mobility of electrons in CdS as well an analysis of the carrier concentration dependence of the room temperature mobility is presented. It is shown that the lattice mobility of electrons can be very well described by the combination of polar optical phonon, deformation potential and piezoelectric scatterings in a very wide temperature range. The room temperature mobility vs carrier concentration curves are calculated for combined ionized impurity and lattice scatterings, with different degrees of compensation. The calculated curve for negligible compensation agrees well with the relevant experimental data.

Dielectric constant and soft mode of Pb 1−xSn xTe

We try to explain the large dielectric constant of Pb 1- x Sn x Te pseudobinary alloy system in terms of the softening of TO-phonon mode due to electron—phonon coupling. The order of magnitude estimation shows that the interband optical deformation potential of several electron volts is sufficient to explain the softening of phonon.

Hall and drift mobility of polar p-type semiconductors. II. Application to ZnTe, CdTe, and ZnSe

For pt. I see ibid., vol. 6, 2967 (1973). The temperature dependence of the Hall and drift mobility of p-type ZnTe, CdTe, and ZnSe is investigated accounting for acoustic and optical deformation potential, piezoelectric, and polar optical scattering. In the case of p-ZnSe the mobility data published previously cannot be explained by these scattering mechanisms. For p-ZnTe and p-CdTe the calculated mobility is in good accord with experimental results below room temperature. Acoustic deformation potential and polar optical scattering are found to be the dominant scattering mechanisms in the temperature range considered here. The mobility of p-CdTe is calculated by treating the polaron heavy hole mass as adjustable. The value finally used is 0.8m0.

Electron concentration and mobility in cds single crystals

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Microwave conduction in n-type germanium under hot electron conditions

Microwave conduction in n-type germanium in the presence of a high steady electric field is studied The carrier concentration is assumed to be high enough to ensure that intercarrier collisions enforce a Maxwellian distribution on the carriers and the momentum loss by the carriers occurs mainly through scattering due to lattice vibrations. The effect of anisotropic effective mass on the microwave conduction characteristics is discussed, and the anisotropy is found to be small at room temperature Numerical values of microwave conductivity and the change in dielectric constant are found to agree with the experimental results of a 4 68 Ω cm n-type germanium sample, and the best fit with the experimental characteristics is obtained for a value of the optical deformation potential constant D0 between 0 7 to 0 8 × 109 ev cm-1.

Drift Velocity and Anisotropy of Hot Electrons innGermanium

The drift velocity and the angle between the direction of the drift velocity and the electric field are calculated as a function of the electric field strength, the crystal orientation, and the lattice temperature. The fit between experimental and theoretical results is nearly quantitative. By the process of fitting, the optical deformation potential constant ${D}_{0}$ and the intervalley rate constant ${w}_{2}$ are determined. The values ${D}_{0}=0.5\ifmmode\times\else\texttimes\fi{}{10}^{9}$ ev/cm and $1.66\ifmmode\times\else\texttimes\fi{}{10}^{10} invsec\ensuremath{\leqq}{w}_{2}\ensuremath{\leqq}{10}^{11} invsec$ are consistent with the results of independent experiments.

Theory of infrared absorption by conduction electrons in germanium

It is shown that a theory of infrared absorption by conduction electrons which takes into account the structure of the conduction band and acoustical as well as optical intravalley scattering can be developed without any serious approximation. In combination with an estimate of the possible influence of impurity scattering the theoretical results can be used for the determination of one of the acoustical and of the optical deformation potential constants. From available experimental data the approximate numerical value of the latter is determined. The general limits of validity of the theory are discussed.