Abstract
In this paper an analysis of the lattice limited mobility of electrons in CdS as well an analysis of the carrier concentration dependence of the room temperature mobility is presented. It is shown that the lattice mobility of electrons can be very well described by the combination of polar optical phonon, deformation potential and piezoelectric scatterings in a very wide temperature range. The room temperature mobility vs carrier concentration curves are calculated for combined ionized impurity and lattice scatterings, with different degrees of compensation. The calculated curve for negligible compensation agrees well with the relevant experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
