Abstract
Electronic Raman scattering (ERS) with below band-gap excitation at 1.064 μm has been used to assess residual shallow acceptors in undoped GaAs crystals with different degrees of compensation. Continuous wave excitation at a power density of ∼1–5 kW/cm2 photoneutralizes those shallow acceptors quantitatively which are compensated by the midgap EL2 donor level. Therefore, the concentration of EL2 compensated acceptors is measured by ERS. Pulsed excitation at a power density of ∼20 MW/cm2 leads furthermore to a partial neutralization of residual acceptors compensated by donors shallower than the EL2 level. This allows a semiquantitative analysis of those donors. Pulsed excitation enables also to assess residual shallow acceptors by ERS in n-type semiconducting GaAs.
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