Abstract
Electronic Raman scattering (ERS) has been used to study residual shallow acceptors in undoped semi-insulating (SI) GaAs grown by the liquid-encapsulated Czochralski technique. The dispersion of the cross section for ERS of shallow acceptors, as well as its absolute value, has been measured. It is shown that ERS allows a quantitative analysis of residual shallow acceptors in SI GaAs. Calibration factors for C and Zn acceptors are given. The detection limit of ERS is determined to ∼5×1014 cm−3 for 500-μm-thick standard wafers. Spatially resolved measurements show a systematic variation of the residual acceptor concentration across 2-in. GaAs wafers.
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