Onset Voltage Research Articles

Electromagnetic plasma micro actuator for active airflow control

This study presents a novel electromagnetic plasma micro actuator capable of generating ionic wind at an extremely low voltage. Ionic and electron movements, driven by the Lorentz force, introduce a lateral injection of initiation carriers, resulting in a significant reduction in discharge onset voltage. Straight ionic wind was demonstrated using a tapered gap electrode, which allowed continuous movement of plasma filament along the electrode at the speed of 4m/s when a DC pulse of 900V was applied. The results suggest that the proposed device may address key challenges faced by current ionic wind generators, such as high voltage requirements and limited device lifespans. In addition, a notable change in the airflow was observed when the direction of ionic wind was altered, indicating the feasibility of active airflow control with stable plasma formation and fast response times.

Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers

In the search for more efficient and sustainable photoelectrochemical devices, BiVO4 is nowadays one of the best-performing photoanode material, with favourable band structure for water oxidation. However, BiVO4 photoanodes face challenges such as poor charge transport and slow kinetics. To address these issues, SnO2 films are commonly used as hole blocking layers, reducing recombination rate and enhancing charge lifespan and overall productivity. Yet, this method encounters problems like high defect concentrations at the SnO2/BiVO4 interface and pinholes in the SnO2 layer, which lead to charge recombination. In this study, we explore a ZrCl4 treatment to improve the effectiveness of SnO2 as a hole-blocking layer in BiVO4 photoanodes. Our findings, supported by detailed optoelectronic characterization and continuous and modulated electrochemical analysis, reveal that ZrCl4 treatment significantly enhances the hole-blocking properties of SnO2. This treatment results in a 37 % increase in photocurrent density at 1.23 VRHE and a 40 mV shift in the onset voltage, demonstrating a substantial improvement in overall photoanode efficiency.

Improvement on the onset voltage for electroluminescent devices based in a SiOx/SiOy bilayer obtained by sputtering

Abstract This work is focused on the composition, optical and electroluminescent properties of silicon rich oxide (SiOx, x < 2) films monolayers and bilayers (SiOx/SiOy) deposited by Sputtering with silicon excess between 6.2 to 10.7 at.% were deposited on p-type (100) silicon substrates. As-deposited SiOx films emit a broad photoluminescence (PL) band where the maximum peak shifts from 420 to 540 nm as the Si-excess increases from 6.2 to 10.7 at.%, respectively. The PL intensity strongly increases and the main PL peak shifts to the red region when the SiOx films are thermally annealed. The PL emission band was dependent on silicon excess and the presence of Si-O bonds defects working as emission centers. MOS-like devices were fabricated (N+ polysilicon was used as top contact and aluminum as bottom contact) to study the EL of SiOx monolayers and SiOx/SiOy bilayers. It was found that the required voltage to obtain EL was reduced when SiOx/SiOy bilayers were used in light emitting capacitors (BLECs) as compared to those with SiOx monolayers.

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

This article examines the feasibility of integrating solid-state plasma surface p-i-n (S-PIN) diodes into on-chip slots using silicon-on-insulator technology. Two categories of solid-state plasma S-PIN diodes are characterized. Simulations analyze the current–voltage (I–V) characteristics, carrier concentrations, potential distribution, and thermal considerations of both single and dual S-PIN diodes, with optimization of their structural parameters and sizes. Experimental tests on fabricated S-PIN diodes of varying sizes with bias lines embedded in the on-chip slots show favorable I–V characteristics for both types of diodes. The measured results closely align with simulation predictions for the diodes’ conduction onset voltages. Additionally, a cavity-backed slot antenna is proposed to evaluate and compare radiation characteristics resulting from integrating different types of S-PIN diodes.

Influence of environmental factors on corona voltage

The environmental conditions related to the air i.e. pressure, temperature, and humidity are relevant in the development of the corona effect in high voltage systems, affecting both corona onset voltage and the observed corona mode. This paper studies the influence of those environmental factors on the effective ionization coefficient and corona onset voltage, based on theoretical analysis, finite element modelling (FEM) and simulation results. Key words. Corona effect, FEM, high voltage, relative density, humidity.

Size tuning of vanadium nitride particles from atomic to micron level as efficient catalysts for zinc-air battery

Transition metal nitrides present superior electrocatalytic activities on the air electrode for fuel cells or metal-air batteries. Despite that, the weak intrinsic activity and ease of aggregation have hampered their catalytic kinetic properties and practical application. Herein, vanadium nitride (VN) particles of different sizes, micron to molecular level, have been fabricated using a facile, in-situ urea-nitridation method, and embedded in an N-doped graphitic carbon aerogel electrocatalyst (VN@CA), the doped material serving as an oxidation catalyst. Having a balance of atomic-level dispersed VN clusters and a high active site density, the obtained VN@CA catalytic material exhibits enhanced catalytic efficiency for the oxygen reduction reaction (ORR), the values of onset and half-wave voltages were measured to be 0.97 V and 0.90 V, respectively, compared to Pt/C (which had voltages of 0.95 V and 0.87 V). Furthermore, the assembled Zn-air battery using VN@CA as catalyst exhibits a high-power density of 176 mW cm−2, a substantial specific discharge capacity of 851 mAh gZn−1 at 20 mA cm−2, a narrow gap between charging and discharging voltages (0.73 V at 50 mA cm−2), and an excellent charge-discharge cycling stability, exceeding 270 cycles with a 66 % round-trip efficiency. This work confirms that the particle size and the density both are responsible for the enhanced electrochemical activity.

Fabrication of a sharp Si protrusion with a faceted apex grown from a surface-melted silicon wafer under high electric and magnetic fields: application to field emission electron sources

A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.

P‐255: Late‐News Poster: Comparison between Conventional Current Density‐Voltage‐Luminance (JVL) and Displacement Current‐JVL (DC‐JVL) Measurements for OLEDs

We propose the simultaneous measurement of a displacement current and current density‐voltage‐luminance (DC‐JVL). We measured RGB OLED samples and obtained differences between onset voltages of current increase and emission voltages in low current density regions. We also confirmed that the DC‐JVL has higher sensitivity than the conventional JVL from the measurement of current efficiency vs. current density characteristics.

Impact of on-chip gate voltage on the electric properties of NbTiN superconducting nanowire transistor

In this work, the gate modulation characteristics of superconducting nanowire transistors (SNTs) were investigated under different on-chip gate voltage configurations. By fabricating NbTiN-SNTs with symmetric side gate, we studied the critical current suppression of SNTs under single, opposite, and double voltage gate. We figure out that the gate voltage and leakage current can be adjusted by the gate configuration. Moreover, it revealed an approximately twofold increase in modulation voltage for the opposite gate configuration as compared to the single gate configuration, implying a possible electric field tuned superconductivity. When simultaneously apply voltage on both gates, the onset and offset voltages kept unchanged, but the leakage current is then two times higher than that of single gate. In addition, under all these three types of gate configuration, the suppression of superconductivity coincided with the onset of leakage current, suggesting a potential charge injection mechanism. Our findings demonstrate that both the electric field and charge injection play important roles on the suppression of superconductivity in SNTs, which also contributes to the further optimization and applications of SNT.

Collection of nanoparticles by electrostatic precipitation operating over a wide range of electric fields

ABSTRACT In the electrostatic precipitation of microparticles, it is common to evaluate the voltages between the corona onset voltage and the breakdown point. However, the charging of particles in the nanoscale size range mainly occurs by diffusion, suggesting the possibility of its occurrence, even at low values. This paper investigates the implications of a wide range of electric fields applied in the collection of nanoparticles (6.15–241.4 nm). Two electrostatic precipitators (P.I. and P.II.), both with plates 10 cm high and 30 cm long, but with different plate spacings (4 and 6.5 cm), were tested using three air velocities (1.9, 2.9, and 3.9 cm/s) and 36 electric fields (0.0 − 5.0 kV/cm). Under the highest electric fields, both precipitators showed efficiencies above 99.9%. Furthermore, nanoparticles were collected before the corona onset voltage, with efficiencies of around 28% (P.I.) and 35% (P.II.). Even though no current was detected by the high voltage source, charges on the particles were measured in electric fields lower than 3.0 kV/cm. The higher the applied voltage, the higher the residual charge of the particles at the precipitator outlet. It is expected that the findings of this work should contribute to the technological development of electrostatic processes for air treatment.

Impact of the gate work function on the experimental I-V characteristics of MOS solar cells simulated with the Sentaurus TCAD software

In this work, the influence of gate work function on the experimental J-VG characteristics of MOS solar cells was investigated with the aid of the Sentaurus TCAD for 2D numer-ical simulations of TiN/SiOxNy/Si Al/SiOxNy/Si and Al/MgO/Mg/SiOxNy/Si structures aiming at solar cells for en-ergy harvesting applications. The increase of the gate work function led to the increase of the reverse current density as pointed out by the Sentaurus TCAD simulations and by the ex-perimental J-VG characteristics. The work functions of Mg, Al, and un-annealed TiN used in the TCAD simulations were 3.7 eV, 4.1 eV, and 4.4 eV, respectively. It was observed that the onset voltage at 0.5 mA/cm2 in the forward-biasing region was at a lower voltage for TiN (~ - 0.06 V) compared to Al (~ - 0.42 V) and the Al/MgO/Mg stack (~ - 0.47 V). On the other hand, the current density increased steeply in the forward biasing for TiN and Al compared to the Al/ MgO/Mg stack gate and the thin MgO layer between Al and Mg worked as a potential barrier in an opposite direction to the potential barrier of the Mg/Si-OxNy/Si structure, which meant an onset voltage lowering for the Al/MgO/Mg/SiOxNy/Si solar cell. For the Al/MgO/Mg stack, the barrier effect of the MgO layer was fitted as a series re-sistance RS = 100 Ω and an equivalent Al/MgO/Mg work func-tion of 4.15 eV considering a substrate doping NA = 1.2x1016 cm-3 and parallel conductance GP = 0. Also, the experimental JxVG characteristic of the Al/SiOxNy/Si cell was fitted for Al work function of 4.10 eV, a series resistance RS = 100 Ω, a parallel resistance RP = 0.02 Ω (GP = 50 S) and a substrate doping NA = 5.5x1015 cm-3. In this case, the high parallel conductance fitted was attributed to the tunneling through the dielectrics as a pre-dominant effect possibly caused by a high concentration of de-fects in the SiOxNy layer. Finally, the MOS solar cell parameters were relatively lower compared to those of commercial outdoor solar cells, but the power generated by the MOS cells reached the mW range, and the conversion efficiency from light energy into electrical energy was higher (12.7%) than the typical values found for energy-harvesting solar cells.

Adjustable onset voltages of embedded LiNbO3 domain-wall selectors for large-scale memory integration

A ferroelectric domain-wall memory has dual functionalities, where the volatile interfacial domain nearby the electrode can function as an embedded selector in contrast to the nonvolatile domain within an inner cell for information storage. However, most of crossbar memories require independent adjustments of the onset voltage of the selector and the coercive voltage of the inner domains at the same node fabrication technology. Here, we fabricated a LiNbO3 mesa-like domain-wall device to touch two top-to-top triangular-like Cu side electrodes. The readout wall current is more than 40 μA in write time as short as 20 ns. With the reduction of the apex angle of the Cu electrode from 180° to 30°, the onset voltage increases continuously from 0.68 to 3.05 V irrespective of the coercive voltage along with the improvement of polarization retention. The underlying physics is discussed on thickening of an effective interfacial layer projected along the applied electric-field direction. This finding enables the crossbar connection of high-density ferroelectric domain-wall memory.

High current field emission from Si nanowires on pillar structures

We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1–10 and <0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0%.

Highly dispersed Zn-N, S co-doped carbon for highly efficient electrocatalytic oxygen reduction

Supportive atomic Zn electrocatalysts exhibit excellent stability for oxygen reduction reaction (ORR) due to their fully occupied d orbitals of Zn, but their catalytic activity is not satisfactory. Whereas heteroatom doping can anchor the Zn atoms to achieve higher Zn loading; and additionally serve as auxiliary sites to enhance the catalytic activity of Zn sites. Herein, we present a method for the synthesis of N, S co-doped carbon with highly dispersed Zn (named Zn-NSC). The ORR activity of the Zn-NSC catalysts is optimized by adjusting the pyrolysis temperature and the atomic structure of the dopant molecules. The optimized Zn-NSC demonstrates significantly enhanced ORR electrocatalytic activity, this is attributable to its highly co-doping of N and S heteroatoms that are adjacent to Zn atoms. Specifically, the Zn-NSC3 catalyst exhibits remarkable ORR characteristics with excellent onset voltage (0.97 V vs RHE) and half-wave potential (0.87 V vs RHE), surpassing those of Pt/C (0.97 V and 0.85 V, respectively). Additionally, the Zn-NSC3 can be utilized as efficient cathode for Al-air batteries, achieving a high power density of 119.4 mW cm−2 and satisfactory discharge stability. This work proposes an approach for synthesizing low-cost and efficient ORR electrocatalysts for Al-air battery applications.

Improved ion adsorption capacities and diffusion dynamics in surface anchored MoS2⊥Mo4/3B2 and MoS2⊥Mo4/3B2O2 heterostructures as anodes for alkaline metal-ion batteries.

First-principles calculations were performed to analyze the atomic structures and electrochemical energy storage properties of novel MoS2⊥boridene heterostructures by anchoring MoS2 nanoflakes on Mo4/3B2 and Mo4/3B2O2 monolayers. Both thermodynamic and thermal stabilities of each heterostructure were thoroughly evaluated from the obtained binding energies and through first-principles molecular dynamics simulations at room temperature, confirming the high formability of the heterostructures. The electrochemical properties of MoS2⊥Mo4/3B2 and MoS2⊥Mo4/3B2O2 heterostructures were investigated for their potential use as anodes for alkaline metal ion batteries (Li+, Na+ and K+). It was revealed that Li+ and Na+ can form multiple stable full adsorption layers on both heterostructures, while K+ forms only a single full adsorption layer. The presence of a negative electron cloud (NEC) contributes to the stabilization of a multi-layer adsorption mechanism. For all investigated alkaline metal ions, the predicted ion diffusion dynamics are relatively sluggish for the adsorbates in the first full adsorption layer on MoS2⊥boridene heterostructures due the relatively large migration energies (>0.50 eV), compared to those of second or third full adsorption layers (<0.30 eV). MoS2⊥Mo4/3B2O2 exhibited higher onset and mean open circuit voltages as anodes for alkaline metal-ion batteries than MoS2⊥Mo4/3B2 hybrids because of enhanced interactions between the adsorbate and the Mo4/3B2O2 monolayer with the presence of O-terminations. Tailoring the size and horizontal spacing between two neighboring MoS2 nano-flakes in heterostructures led to high theoretical capacities for LIBs (531 mA h g-1), SIBs (300 mA h g-1) and PIBs (131 mA h g-1) in the current study.

Enhanced LED Performance by Ion Migration in Multiple Quantum Well Perovskite.

Here we study the effect of ion migration on the performance of perovskite light emitting diodes (PeLEDs). We compared aromatic and linear barrier molecules in Ruddlesden-Popper and Dion-Jacobson two-dimensional perovskites having multiple quantum well (MQW) structures. PeLED devices were fabricated by using the same conditions and architecture, while their electroluminescence properties and ion migration behavior were investigated. Impedance spectroscopy measurements were used to analyze the PeLEDs, which found a direct link between the barrier molecule type, the device efficiency, and ion migration. The best performing LEDs were based on the aromatic barriers, which present dominant inductive impedance, indicating an earlier onset voltage of radiative recombination. These findings present an approach of how to control radiative emission in perovskite LEDs which opens the way for further improvement in PeLEDs and memristors.

High flow rate electrospray cooling performance of water–ethanol mixtures

Electrospray (ES) is an effective approach for cooling high-power density devices, owing to its desirable features such as uniform droplet diameter, suppression of droplet rebound, and low power consumption. Despite its excellent thermal properties, water has not been extensively employed as a working fluid in ES setups due to difficulties in establishing a stable ES mode. In this study, ES cooling performance of high flow rate water–ethanol mixtures is investigated. The stable region of the cone-jet mode is identified by capturing the meniscus profile and detecting the corona discharge. The study investigates the effect of ES variables, including flow rate (20 mlhr −100 mlhr), applied voltage (5.30 KV − 12.15 KV), and working fluid including pure ethanol (xH2O= 0 %), mixture I (xH2O= 35 %), and mixture II (xH2O= 70 %), on the cooling performance within the stability region. The results show that raising the flow rate from 20 mlhr to 100 mlhr augments the onset voltage of the cone-jet mode in each fluid. In the case of pure ethanol and mixture I, the end voltage corresponding to the multi-jet mode increases with the rise in flow rate. However, As a result of the heightened surface tension, no multi-jet mode is observed for mixture II, and only the occurrence of corona discharge defines the end voltage. In the single-phase regime, the cooling behavior only depends on the flow rate, owing to the thick liquid layer formed on the heated surface. However, it has been revealed that when the mixture water volume fraction increases up to 70 %, the critical heat flux rise is approximately82 % (Q = 20 mlhr), 148 % (Q = 60 mlhr), and 167 % (Q = 100 mlhr), at the onset voltage and 98 % (Q = 20 mlhr), 131 % (Q = 60 mlhr), and 147 % (Q = 100 mlhr), at the end voltage due to the improved thermal properties of the fluid. Next, the effect of each ES variable on cooling performance is investigated separately. Based on the results, an increase in the flow rate from 40 mlhr to 80 mlhr leads to an approximately 70 % rise in the critical heat flux for both mixture I and mixture II. Additionally, increasing the mixture water volume fraction from 35 % to 70 % results in an approximately 29 % rise in the critical heat flux, attributed to the larger latent heat of mixture II. In the transition regime, mixture II demonstrates superior performance compared to mixture I by suppressing the rebounding effect and enhancing the cooling performance. This improvement is due to the rise in the image force caused by the increase in water volume fraction. However, this enhancement is more significant at the lower flow rate due to the shorter impact time.

Direct current conductance and 1/f-noise in cellulose nanofiber–multi-walled carbon nanotube composites for applications in flexible electronic devices

We report on the studies of conduction mechanism, direct current conductance, and 1f-noise of cellulose nanofiber (CNF) and multiwalled carbon nanotube (MWCNT) composites. The composites were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, and field emission scanning electron microscopy. The temperature- and voltage-dependence of the dc conductance Σ were, respectively, probed to investigate the charge transport mechanism and the electrical response of the composite. At room temperature, the increase in Σ with wt. % of MWCNT ϕ showed typical percolation behavior. The Σ−T behavior was fitted to the combination of one-dimensional variable range hopping and the fluctuation-induced tunneling, which were attributed to hopping of charge carriers through 1D MWCNTs and the tunneling of charge carriers between the bundles of MWCNTs, respectively. The non-Ohmic electrical conduction was characterized by the onset voltage V0(T) which scaled with Ohmic conductance Σ0 as V0(T)∼Σ0(T)xT, with xT being the onset exponent increased with ϕ. A scaling description based on the data collapse method was adopted to find the parameters V0(T) and xT. The noise power spectrum SV(f) followed the relation SV(f)∼Vβ with two different power-laws: β1 in the Ohmic and β2 in the non-Ohmic region (β1&amp;gt;β2). Interestingly, this change in power-laws occurs at the same V0(T) obtained from Σ−V curves. A simple model was proposed to explain the noise behavior after V0(T). It is expected that such electrical characterization of CNF-MWCNT nanopaper composite would open up their possibility of application in flexible electronic devices, intelligent networks, sensors, and actuators.

Donor-Acceptor Copolymers with 9-(2-Ethylhexyl)carbazole or Dibenzothiophene-5,5-dioxide Donor Units and 5,6-Difluorobenzo[c][1,2,5]thiadiazole Acceptor Units for Photonics.

Semiconducting polymers, particularly of the third generation, including donor-acceptor (D-A) copolymers, are extensively studied due to their huge potential for photonic and electronic applications. Here, we report on two new D-A copolymers, CP1 and CP2, composed of different electron-donor (D) units: 9-(2-ethylhexyl)carbazole or dibenzothiophene-5,5-dioxide, respectively, and of 4,7-bis(4'-(2-octyldodecyl)thiophen-2'-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazole building block with central 5,6-difluorobenzo[c][1,2,5]thiadiazole electron-acceptor (A) units, which were synthesized by Suzuki coupling in the high-boiling solvent xylene and characterized. The copolymers exhibited very good thermal and oxidation stability. A copolymer CP1 with different molecular weights was prepared in order to facilitate a comparison of CP1 with CP2 of comparable molecular weight and to reveal the relationship between molecular weight and properties. The photophysical, electrochemical, and electroluminescence properties were examined. Intense red photoluminescence (PL) with higher PL efficiencies for CP1 than for CP2 was observed in both solutions and films. Red shifts in the PL thin film spectra compared with the PL solution spectra indicated aggregate formation in the solid state. X-ray diffraction measurements revealed differences in the arrangement of molecules in thin films depending on the molecular weight of the copolymers. Light-emitting devices with efficient red emission and low onset voltages were prepared and characterized.

Performance optimization of epitaxial-layer based Si/SiGe hetero-junction area scaled tunnel FET label-free biosensors considering steric hindrance

This paper explores Si/SiGe hetero-junction dielectrically modulated area-scaled tunnel FET (DM-ASTFET) for label-free bio-sensing applications. The proposed sensor can detect bioanalytics such as protein, APTES, Choline Oxidase and Uricase. We have also investigated the influence of quantum confinement on the proposed device, and the onset voltage shifted by 0.1–0.3 V, as reported, without affecting the sensitivity mechanism. Sensitivity improvement is observed when the gate oxide length is 20 nm and the cavity length is 50 nm for a given bio-molecule due to the increased cross-section area for tunneling. The impact of epitaxial engineering on the biosensor's performance is also investigated in this work. A physics-based in-depth explanation of steric hindrance on the performance of the proposed sensor is also presented in this work. Finally, the optimum device design improves the sensitivity of ION ∼×103 and Vth ∼×2 times.