Abstract
This article examines the feasibility of integrating solid-state plasma surface p-i-n (S-PIN) diodes into on-chip slots using silicon-on-insulator technology. Two categories of solid-state plasma S-PIN diodes are characterized. Simulations analyze the current–voltage (I–V) characteristics, carrier concentrations, potential distribution, and thermal considerations of both single and dual S-PIN diodes, with optimization of their structural parameters and sizes. Experimental tests on fabricated S-PIN diodes of varying sizes with bias lines embedded in the on-chip slots show favorable I–V characteristics for both types of diodes. The measured results closely align with simulation predictions for the diodes’ conduction onset voltages. Additionally, a cavity-backed slot antenna is proposed to evaluate and compare radiation characteristics resulting from integrating different types of S-PIN diodes.
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