One-dimensional Electron Systems Research Articles

Dimensionally Extending from 1D MX-Chain to Ladder and Nanotube Systems: Structural and Electronic Properties.

Molecular one-dimensional (1D) electron systems have attracted much attention due to their unique electronic state, physical and chemical properties derived from high-aspect-ratio structures. Among 1D materials, mixed-valence halogen-bridged transition-metal chain complexes (MX-chains) based on coordination assemblies are currently of particular interest because their electronic properties, such as mixed-valence state and band gap, can be controlled by substituting components and varying configurations. In particular, chemistry has recently noted that dimensionally extending MX-chains through organic rung ligands can introduce and modulate electronic coupling of metal atoms between chains, i. e., interchain interactions. In this review, for the first time, we highlight the recent progress on MX systems from the viewpoint of dimensionally extending from 1D chain to ladder and nanotube, mainly involving structural design and electronic properties. Overall, dimensional extension can not only tune the electronic properties of MX-chain, but also build the unique platform for studying transport dynamics in confined space, such as proton conduction. Based on these features, we envision that the MX-chain systems provide valuable insights into deep understanding of 1D electron systems, as well as the potential applications such as nanoelectronics.

Localized electronic states induced by the presence of two defective resonators in electronic comb-like waveguides structure

Abstract In this paper, we use the transfer matrix method to determine the band structure and electrical transmission rate of a one-dimensional electronic comb-like waveguide system. This structure is made up of the periodicity of finite GaAs quantum wire (QWR) (segment) grafted in its extremity by a vertical Ga 1 − x Al x As QWR (resonator). In this perfect structure, we replace the resonator situated in the middle of the periodic structure by a composed resonator made of vertical superposition of two resonators of different Al concentrations (x 01 and x 02). These defective resonators induce electronic localized states, inside the electronic band gaps of the perfect structure, with higher energy values depending on the geometrical (lengths) and the physical (x 01, x 02) parameters of the defective resonators. When the length d 02 of the upper resonator composed of Al concentration x 02 = 0.3 increases, these localized electronic states move to lower energies; conversely, when the concentration x 02 increases, they move to higher energies. We also show that there is an important effect of changing the localized states of two resonators connected in cascade with different concentrations. Our results may be relevant to the design of electronic guidance, filtering, and detection systems.

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.

Non-epitaxial growth of highly oriented transition metal dichalcogenides with density-controlled twin boundaries

Twin boundaries (TBs) in transition metal dichalcogenides (TMDs) constitute distinctive one-dimensional electronic systems, exhibiting intriguing physical and chemical properties that have garnered significant attention in the fields of quantum physics and electrocatalysis. However, the controlled manipulation of TBs in terms of density and specific atomic configurations remains a formidable challenge. In this study, we present a non-epitaxial growth approach that enables the controlled and large-scale fabrication of homogeneous catalytically active TBs in monolayer TMDs on arbitrary substrates. Notably, the density achieved using this strategy is six times higher than that observed in convention chemical vapor deposition (CVD)-grown samples. Through rigorous experimental analysis and multigrain Wulff construction simulations, we elucidate the role of regulating the metal source diffusion process, which serves as the key factor for inducing the self-oriented growth of TMD grains and the formation of unified TBs. Furthermore, we demonstrate that this novel growth mode can be readily incorporated into the conventional CVD growth method by making a simple modification of the growth temperature profile, thereby offering a universal approach for engineering of grain boundaries in two-dimensional materials.

Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube p-n Junction.

The precise control and deep understanding of quantum interference in carbon nanotube (CNT) devices are particularly crucial not only for exploring quantum coherent phenomena in clean one-dimensional electronic systems, but also for developing carbon-based nanoelectronics or quantum devices. Here, we construct a double split-gate structure to explore the Aharonov-Bohm (AB) interference effect in individual single-wall CNT p-n junction devices. For the first time, we achieve the AB modulation of conductance with coaxial magnetic fields as low as 3T, where the flux through the tube is much smaller than the flux quantum. We further demonstrate direct electric-field control of the nonmonotonic magnetoconductance through a gate-tunable built-in electric field, which can be quantitatively understood in combination with the AB phase effect and Landau-Zener tunneling in a CNT p-n junction. Moreover, the nonmonotonic magnetoconductance behavior can be strongly enhanced in the presence of Fabry-Pérot resonances. Our Letter paves the way for exploring and manipulating quantum interference effects with combining magnetic and electric field controls.

A semiclassical approach to the magnetotransport in quasi-1D electron systems

The issue of the magnetotransport in any quasi one-dimensional (quasi-1D) electron system has not hoarded so much attention as the magnetotransport in two-dimensional (2D) system. At most, at the beginning of the realization of those systems, some experimental studies and phenomenological models were developed. However, it is an interesting subject that can throw light on the physical mechanisms determining the transport properties of low-dimensional electron systems. In our previous paper, Hidalgo (Eur Phys J Plus 137:1–-14, 2022), we described in detail a semiclassical global approach to the quantum Hall and Shubnikov-de Haas phenomena in a 2D system for both, the integer and fractional quantum Hall effects (IQHE and FQHE), and not only in semiconductors quantum wells but also in graphene. Here, we focus on the magnetotransport in a quasi-1D electron system following also a semiclassical approach, i.e., taking into consideration the Landau-type density of states for such system and its implication in the conductivity.

Simulations of Dynamical Electronic Vortices in Charge and Spin Density Waves

Charge and spin density waves are typical symmetry broken states of quasi one-dimensional electronic systems. They demonstrate such common features of all incommensurate electronic crystals as a spectacular non-linear conduction by means of the collective sliding and susceptibility to the electric field. These phenomena ultimately require for emergence of static and transient topological defects: there are dislocations as space vortices and space-time vortices known as phase slip centers, i.e., a kind of instantons. Dislocations are statically built-in under a transverse electric field; their sweeping provides a conversion among the normal carriers and condensate which ensures the onset of the collective sliding. A special realization in a high magnetic field, when the density wave is driven by the Hall voltage, originated by quantized normal carriers, reveals the dynamic vorticity serving to annihilate compensating normal and collective currents. Spin density waves, with their rich multiplicative order parameter, bring to life complex objects with half-integer topologically bound vorticities in charge and spin degrees of freedom. We present the basic concepts and modelling results of the stationary states and their transient dynamics involving vorticity. The models take into account multiple fields in their mutual non-linear interactions: the complex order parameter, the self-consistent electric field, and the reaction of normal carriers. We explore the traditional time-dependent Ginzburg–Landau approach and introduce its generalization allowing the treatment of intrinsic normal carriers. The main insights and illustrations come from numerical solutions to partial differential equations for the dissipative dynamics of one and two space dimensions.

Entanglement contour in the disordered electronic systems

We investigate entanglement contour of a one-dimensional non-interacting electronic systems with two different models of the static disorder. We obtain the scaling behavior of entanglement contour for the standard Anderson model at zero temperature. We show that the exponential scaling of the entanglement contour leads a universal area law of entanglement entropy. On the other hand, the power-law scaling of entanglement contour reflects the logarithmic scaling law of entanglement entropy. Furthermore, we demonstrate entanglement contour as a theoretical tool for the characterization of quantum phase transition in condensed matter problems. More precisely, we numerically explore the scale-invariant feature of the scaled entanglement contour in the vicinity of metal–insulator transition for the power-law correlated disorder model. • We report the numerical calculations of the entanglement contour in the disordered electronic systems. • The decay of entanglement contour reflects the scaling law of entanglement entropy. • Entanglement contour is considered as a theoretical tool for the characterization of quantum phase transition in condensed matter problems.

Benzenetriimide-Based Molecular Conductor with Antiferro- to Ferromagnetic Switching Induced by Structural Change of π-stacked Array.

Benzenetriimide (BTI) is a promising building block for materials chemistry due to its characteristic 3-fold symmetry and redox properties, whereas little is known about its conductive and magnetic properties. In this study, we synthesized three charge-transfer complexes based on N,N',N''-trimethylbenzenetriimide (BTI-Me). One of the complexes contains isolated dimers of BTI-Me radical anion (BTI-Me⋅- ), while the other two have the infinite π-stacked array of BTI-Me with the formal charge of -0.5. The latter two complexes did not show metallic behavior but showed semiconducting behavior probably due to the characteristic insulation in one-dimensional electron system, so-called charge ordering and dimer-Mott insulation. The magnetic susceptibility of the complex in dimer-Mott state exhibits an unusual transition from antiferromagnetic to ferromagnetic spin states with the hysteresis loop of 15 K derived from the structural phase transition around 130 K. These properties were also supported by DFT calculations.

Igor Dzyaloshinskii’s contribution to our understanding of the physics of one-dimensional interacting electron systems

Among his many important contributions to condensed matter physics, Igor Dzyaloshinskii published several seminal papers which contributed essentially to our understanding of the unusual behaviour of one-dimensional electronic systems. In this review I will briefly outline the main results obtained mostly in two of them and will present further developments in this field.

Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe2 mirror twin boundaries.

One-dimensional electron systems exhibit fundamentally different properties than higher-dimensional systems. For example, electron-electron interactions in one-dimensional electron systems have been predicted to induce Tomonaga-Luttinger liquid behaviour. Naturally occurring grain boundaries in single-layer transition metal dichalcogenides exhibit one-dimensional conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behaviour. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and tune their charge carrier concentration. Here we present a scanning tunnelling microscopy and spectroscopy study of gate-tunable mirror twin boundaries in single-layer 1H-MoSe2 devices. Gating enables scanning tunnelling microscopy and spectroscopy for different mirror twin boundary electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of the resulting mirror twin boundary electronic structure allows unambiguous identification of collective density wave excitations having two velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger liquid theory.

Trimetallic Mixture of Ni(III), Pd(III) and Au(III) Ions in a Molecule-Based Bromide-Bridged MX-Chain Compound

Abstract Multi-metallic inorganic alloy materials have attracted great attention recently. Additionally, molecule-based materials have wide designability in terms of their structures and electronic states. These are two different ideas. Here, we report the mixing of Pd(III) and Au(III) ions into a bromide-bridged molecular chain compound [Ni(chxn)2Br]Br2 (chxn: 1R,2R-diaminocyclohexane) to form an average formula of [Ni0.853Pd0.142Au0.005(chxn)2Br]Br2, which was synthesized by an electrochemical oxidation method. This trimetallic material is revealed to be a Mott–Hubbard state semiconductor with a one-dimensional electronic system like that of [Ni(chxn)2Br]Br2, whereas it shows a smaller activation energy for conductivity than that of pristine [Ni(chxn)2Br]Br2. This work represents a fusion of the concepts of multi-metallic and molecule-based materials using a 1D compound.

Pattern Formation and Aggregation in Ensembles of Solitons in Quasi One-Dimensional Electronic Systems

Broken symmetries of quasi one-dimensional electronic systems give rise to microscopic solitons taking roles of carriers of the charge or spin. The double degeneracy gives rise to solitons as kinks of the scalar order parameter A; the continuous degeneracy for the complex order parameter Aexp(iθ) gives rise to phase vortices, amplitudes solitons, and their combinations. These degrees of freedom can be controlled or accessed independently via either the spin polarization or the charge doping. The long-range ordering in dimensions above one imposes super-long-range confinement forces upon the solitons, leading to a sequence of phase transitions in their ensembles. The higher-temperature T transition enforces the confinement of solitons into topologically bound complexes: pairs of kinks or the amplitude solitons dressed by exotic half-integer vortices. At a second lower T transition, the solitons aggregate into rods of bi-kinks or into walls of amplitude solitons terminated by rings of half-integer vortices. With lowering T, the walls multiply, passing sequentially across the sample. Here, we summarize results of a numerical modeling for different symmetries, for charged and neutral soliton, in two and three dimensions. The efficient Monte Carlo algorithm, preserving the number of solitons, was employed which substantially facilitates the calculations, allowing to extend them to the three-dimensional case and to include the long-range Coulomb interactions.

One-dimensional Luttinger liquids in a two-dimensional moiré lattice.

The Luttinger liquid (LL) model of one-dimensional (1D) electronic systems provides a powerful tool for understanding strongly correlated physics, including phenomena such as spin-charge separation1. Substantial theoretical efforts have attempted to extend the LL phenomenology to two dimensions, especially in models of closely packed arrays of 1D quantum wires2-13, each being described as a LL. Such coupled-wire models have been successfully used to construct two-dimensional (2D) anisotropic non-Fermi liquids2-6, quantum Hall states7-9, topological phases10,11 and quantum spin liquids12,13. However, an experimental demonstration of high-quality arrays of 1D LLs suitable for realizing these models remains absent. Here we report the experimental realization of 2D arrays of 1D LLs with crystalline quality in a moiré superlattice made of twisted bilayer tungsten ditelluride (tWTe2). Originating from the anisotropic lattice of the monolayer, the moiré pattern of tWTe2 hosts identical, parallel 1D electronic channels, separated by a fixed nanoscale distance, which is tuneable by the interlayer twist angle. At a twist angle of approximately 5 degrees, we find that hole-doped tWTe2 exhibits exceptionally large transport anisotropy with a resistance ratio of around 1,000 between two orthogonal in-plane directions. The across-wire conductance exhibits power-law scaling behaviours, consistent with the formation of a 2D anisotropic phase that resembles an array of LLs. Our results open the door for realizing a variety of correlated and topological quantum phases based on coupled-wire models and LL physics.

Study of Influence of The Electron-Phonon Interaction on Quantum Dot Coupled to Microcavity

In this present paper, we presented about the study of the electron-phonon interaction on quantum dot coupled to microcavity has the same energy scale as the other relevant interactions in low-dimensional systems and it is therefore important to study the polaronic effects in these systems [1-5]. First, we consider a one-dimensional (1D) electron system incorporating the electron-electron and electron-phonon interactions using the Luttinger model. We explicitly consider both the electron-optical-phonon interaction and the electron-acoustic-phonon interaction together with the electron-electron interaction. This system can be referred to as the Frhlich-Toyozawa-Luttinger (FTL) liquid [6-13]. We calculate the momentum distribution function of an FTL liquid exactly and examine how the momentum distribution function is affected by the electron-phonon interactions. Our results will be significant in the context of nanotubes and other systems where researchers have observed the Luttinger liquid behaviour experimentally [14-15].

Z3 Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface.

An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces, but the nature of its low-temperature phases has been puzzling for last two decades. Here, we unambiguously identify the low-temperature structural distortion of this surface using high-resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains, are found to be strongly buckled, every third atom down, forming trimer unit cells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z3 topology, making it possible to exploit topological phases and excitations. The tunneling current was found to substantially lower the energy barrier between three degenerate CDW states, which induces a dynamically fluctuating CDW at very low temperature.

Macro- and atomic-scale observations of a one-dimensional heterojunction in a nickel and palladium nanowire complex

The creation of low-dimensional heterostructures for intelligent devices is a challenging research topic; however, macro- and atomic-scale connections in one-dimensional (1D) electronic systems have not been achieved yet. Herein, we synthesize a heterostructure comprising a 1D Mott insulator [Ni(chxn)2Br]Br2 (1; chxn = 1R-2R-diaminocyclohexane) and a 1D Peierls or charge-density-wave insulator [Pd(chxn)2Br]Br2 (2) using stepwise electrochemical growth. It can be considered as the first example of electrochemical liquid-phase epitaxy applied to molecular-based heterostructures with a macroscopic scale. Moreover, atomic-resolution scanning tunneling microscopy images reveal a modulation of the electronic state in the heterojunction region with a length of five metal atoms (~ 2.5 nm), that is a direct evidence for the atomic-scale connection of 1 and 2. This is the first time that the heterojunction in the 1D chains has been shown and examined experimentally at macro- and atomic-scale. This study thus serves as proof of concept for heterojunctions in 1D electronic systems.

Enhancement in tunneling density of states in a Luttinger liquid: Role of nonlocal interaction

Power law suppression of local electronic tunneling density of states (TDOS) in the zero-energy limit is a hallmark of Luttinger liquid (LL) phase of the interacting 1-D electron system. We present a theoretical model which hosts LL state with the surprising feature of enhancement rather than suppression in local TDOS originating from non-local and repulsive density-density interactions. Importantly, we find enhancement of TDOS in the manifold of parameter space where the system is stable in the renormalization group (RG) sense. We argue that enhancement of TDOS along with RG stability is possible only when the system has broken parity symmetry about the position of local TDOS enhancement. Such a model could be realized on the edge states of a bi-layer quantum Hall system where both intra-layer and inter-layer density-density interactions are present mimicking the role of local and non-local interactions respectively.

Unequal on-site interaction effects in the one-dimensional electron system at quarter filling

The one-dimensional antiferromagnetic correlated electron system described by the unusual t–U–J model with alternating on-site interactions at odd (U_o) and even (U_e) sites is studied analytically. At weak coupling, the use of bosonization and renormalization-group techniques helps to obtain ground-state phase diagram. At quarter filling, the unequal on-site repulsion (U_ene U_o) causes the occurrence of umklapp processes and the generation of a charge excitation gap. Contrary to the usual case (U_e=U_o), the system is not metallic but insulating. For U_e+U_o<2J, the system is in a spin-gapped phase with charge-density-wave (CDW) instability; for U_e+U_oge 2J, the system is in a spin-gapless phase characterized by the coexistence of both CDW and spin-density-wave (SDW) instabilities, where the SDW correlation dominates over the CDW one.

Signature of Generalized Gibbs Ensemble Deviation from Equilibrium: Negative Absorption Induced by a Local Quench

When a parameter quench is performed in an isolated quantum system with a complete set of constants of motion, its out of equilibrium dynamics is considered to be well captured by the Generalized Gibbs Ensemble (GGE), characterized by a set of coefficients related to the constants of motion. We determine the most elementary GGE deviation from the equilibrium distribution that leads to detectable effects. By quenching a suitable local attractive potential in a one-dimensional electron system, the resulting GGE differs from equilibrium by only one single , corresponding to the emergence of an only partially occupied bound state lying below a fully occupied continuum of states. The effect is shown to induce optical gain, i.e., a negative peak in the absorption spectrum, indicating the stimulated emission of radiation, enabling one to identify GGE signatures in fermionic systems through optical measurements. We discuss the implementation in realistic setups.