On-chip Sources Research Articles

Efficient photon-pair generation in layer-poled lithium niobate nanophotonic waveguides

Integrated photon-pair sources are crucial for scalable photonic quantum systems. Thin-film lithium niobate is a promising platform for on-chip photon-pair generation through spontaneous parametric down-conversion (SPDC). However, the device implementation faces practical challenges. Periodically poled lithium niobate (PPLN), despite enabling flexible quasi-phase matching, suffers from poor fabrication reliability and device repeatability, while conventional modal phase matching (MPM) methods yield limited efficiencies due to inadequate mode overlaps. Here, we introduce a layer-poled lithium niobate (LPLN) nanophotonic waveguide for efficient photon-pair generation. It leverages layer-wise polarity inversion through electrical poling to break spatial symmetry and significantly enhance nonlinear interactions for MPM, achieving a notable normalized second-harmonic generation (SHG) conversion efficiency of 4615% W−1cm−2. Through a cascaded SHG and SPDC process, we demonstrate photon-pair generation with a normalized brightness of 3.1 × 106 Hz nm−1 mW−2 in a 3.3 mm long LPLN waveguide, surpassing existing on-chip sources under similar operating configurations. Crucially, our LPLN waveguides offer enhanced fabrication reliability and reduced sensitivity to geometric variations and temperature fluctuations compared to PPLN devices. We expect LPLN to become a promising solution for on-chip nonlinear wavelength conversion and non-classical light generation, with immediate applications in quantum communication, networking, and on-chip photonic quantum information processing.

Femtosecond pulse amplification on a chip

Femtosecond laser pulses enable the synthesis of light across the electromagnetic spectrum and provide access to ultrafast phenomena in physics, biology, and chemistry. Chip-integration of femtosecond technology could revolutionize applications such as point-of-care diagnostics, bio-medical imaging, portable chemical sensing, or autonomous navigation. However, current chip-integrated pulse sources lack the required peak power, and on-chip amplification of femtosecond pulses has been an unresolved challenge. Here, addressing this challenge, we report >50-fold amplification of 1 GHz-repetition-rate chirped femtosecond pulses in a CMOS-compatible photonic chip to 800 W peak power with 116 fs pulse duration. This power level is 2–3 orders of magnitude higher compared to those in previously demonstrated on-chip pulse sources and can provide the power needed to address key applications. To achieve this, detrimental nonlinear effects are mitigated through all-normal dispersion, large mode-area and rare-earth-doped gain waveguides. These results offer a pathway to chip-integrated femtosecond technology with peak power levels characteristic of table-top sources.

Room-temperature photonic quantum computing in integrated silicon photonics with germanium–silicon single-photon avalanche diodes

Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) typically based on niobium nitride (NbN) operated at a temperature <4 K. This paper proposes and analyzes 300 K waveguide-integrated germanium–silicon (GeSi) single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance is competitive against that of NbN SNSPDs in a series of metrics for PQC with a reasonable time-gating window. These GeSi SPADs become photon-number-resolving avalanche diodes (PNRADs) by deploying a spatially-multiplexed M-fold-waveguide array of M GeSi SPADs. Using on-chip waveguided spontaneous four-wave mixing sources and waveguided field-programmable interferometer mesh circuits, together with the high-metric SPADs and PNRADs, high-performance quantum computing at room temperature is predicted for this PQC architecture.

Optimized waveguides for mid-infrared lab-on-chip systems: A rigorous design approach

Mid-infrared absorption spectroscopy is a well-established technique for non-destructive quantitative molecular analysis. Waveguide-integrated sensors provide a particularly compact solution operating with reduced sample volumes while exhibiting exquisite molecular selectivity, sensitivity, and ultra-low limits of detection. Recent advances in mid-infrared technologies along with the integration of on-chip sources, detectors and microfluidics, have brought mid-infrared lab-on-chip systems closer to reality. A variety of material platforms has been proposed for the implementation of such systems. However, the lack of a consistent waveguide design approach renders a fair comparison between different alternatives – and a deliberate material selection – challenging, limiting the development of optimized on-chip spectroscopic devices. In the present study, a systematic waveguide design approach has been developed, facilitating evanescent field absorption-based sensing, in particular for aqueous analytes. Our strategy enables a rigorous comparison of several state-of-the-art thin-film waveguides using parametric expressions to predict the achievable limits of detection of the sensing system, while indicating optimum waveguide dimensions and absorption pathlengths, pivotal for the development of next-generation mid-infrared lab-on-chip devices.

Suppression of external noise in on-chip photon-pair sources

Suppression of external noise in on-chip photon-pair sources

All-optical steering on the proton emission in laser-induced nanoplasmas

Nanoplasmas induced by intense laser fields have attracted enormous attention due to their accompanied spectacular physical phenomena which are vigorously expected by the community of science and industry. For instance, the energetic electrons and ions produced in laser-driven nanoplasmas are significant for the development of compact beam sources. Nevertheless, effective confinement on the propagating charged particles, which was realized through magnetic field modulation and target structure design in big facilities, are largely absent in the microscopic regime. Here we introduce a reliable scheme to provide control on the emission direction of protons generated from surface ionization in gold nanoparticles driven by intense femtosecond laser fields. The ionization level of the nanosystem provides us a knob to manipulate the characteristics of the collective proton emission. The most probable emission direction can be precisely steered by tuning the excitation strength of the laser pulses. This work opens new avenue for controlling the ion emission in nanoplasmas and can vigorously promote the fields such as development of on-chip beam sources at micro-/nano-scales.

Broadband near-infrared emission in silicon waveguides

Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon’s indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing.

Exceeding two octave-spanning supercontinuum generation in integrated As2S3 waveguides pumped by a 2 μm fiber laser

In this work, we demonstrate over two octaves-spanning supercontinuum generation in integrated As2S3 chalcogenide glass waveguides pumped by a 2 μm femtosecond fiber laser. The pump laser provides 182 fs pulses at 50 MHz repetition rate. Through optimization of the waveguide dimensions, a broad supercontinuum spectrum spanning from 0.6 to 2.8 μm was achieved using a 4 μm wide, 5 mm long waveguide with 357 mW coupled pump power. The findings showcase the potential of dispersion engineered, integrated As2S3 photonics for realizing compact, efficient on-chip supercontinuum sources for mid-infrared applications.

Entropy Sources from Tunnelling in Standard CMOS Structures

Pseudo-random number generators are predominantly utilised as entropy sources in encryption and seeding processes, however, they are deterministic by nature. This paper presents the analysis and design methodology of an on-chip quantum noise source that may suitably be used as an entropy source in true random number generators. Quantum tunnelling is achieved through the strong biasing of a MOS structure to generate gate-referred shot noise. Structures are fabricated in a commercial 40 nm process and the sampled noise is tested against the NIST SP800-90B and SP800-22 test suites, showing a maximal entropy of 0.985 at a bias current of 1500 µA with a consistent pass rate across all NIST tests.

Optical to terahertz frequency conversion using near zero-index nonlinear hybrid waveguides

Terahertz communications has emerged as an excellent candidate for the next generation of wireless communication networks. Despite of significant advances, one still looks for a high-efficiency terahertz source using nonlinear optics, such as optical refraction and difference-frequency generation. Concurrently, recent years have witnessed significant progress in metamaterials-assisted nonlinear optical processes. In this study, we propose a theoretical approach using near zero-index nonlinear hybrid waveguides to realize a high generation efficiency of terahertz waves via on-chip difference-frequency generation. Remarkably, thanks to the simultaneous realization of near zero-index both at terahertz and telecom frequencies, such a nonlinear hybrid waveguide can overcome two major bottlenecks in the conversion from optical wave to terahertz waves: phase mismatch and weak nonlinear optical-terahertz waves interactions, resulting in a high conversion as 2.2 × 10−3W−1 just within the propagation length of several terahertz wavelengths. Our results demonstrate the feasibility of an on-chip terahertz source, offering unique properties such as high integration and ultra-low power consumption for terahertz communication systems.

Nonlinear compression of mid-infrared supercontinuum generation in dispersion-engineered As2S5 chalcogenide ridge waveguide

We numerically demonstrated nonlinear compression of mid-infrared (mid-IR) supercontinuum (SC) generation in As2S5 chalcogenide glass (ChG) ridge waveguides, achieving a small dispersion value at the pump wavelength of 2.5 µm by adjusting the waveguide width (normal dispersions of -10.547 ps.nm−1.km−1 and the anomalous dispersions of +5.314 ps.nm−1.km−1). These waveguides were designed using the negative slope of the dispersions with the negative third-order dispersion, which are applied to generate the nonlinear compression of SC generation. Using a 50-fs pulse with the peak power of 2000 W, the two waveguides could compress the maximum pulse peak power of 6900 W (> 3.4 octaves) and 6360 W (> 3.1 octaves) and generate the widest SC spectra, spanning from 1.20 µm to 12.96 µm and from 1.25 µm to >13 µm with only short waveguides 0.85 mm and 1 mm long, respectively. The key process behind SC formation in such ChG waveguides is related to self-phase modulation, four-wave mixing, and nonlinear compression. This particular design is effective, and ChG waveguides can generate high peak power and the widest spectra of SC generation. Moreover, the waveguides are also relatively flexible in design, which is concerned with optical design and engineering, and micro-optical devices. As the ultra-wideband mid-IR SC source, high pulse peak power, very short waveguides, and low-energy pulses (<1 pJ) are important for on-chip mid-IR SC sources, the proposed work would offer the greatest benefits in practical application.

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology, and opens up applications in imaging and spectroscopy. Here, we present high brightness ((1.6 ± 0.3) × 109 pairs/s/mW/nm) visible–near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm when pumped with a spectrally multimode laser diode. The measured on-chip source efficiency of (2.3 ± 0.5) × 1011 pairs/s/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. Further improvements in the brightness and efficiencies are possible by pumping the device with a single-frequency laser, which would also shrink the pair bandwidth. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave.

Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source.

An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330GHz and a near-zero anomalous dispersion region of over 100nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation g_{H}^{(2)}(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.

Multifield-Modulated Spintronic Terahertz Emitter Based on a Vanadium Dioxide Phase Transition.

The efficient generation and active modulation of terahertz (THz) waves are strongly required for the development of various THz applications such as THz imaging/spectroscopy and THz communication. In addition, due to the increasing degree of integration for the THz optoelectronic devices, miniaturizing the complex THz system into a compact unit is also important and necessary. Today, integrating the THz source with the modulator to develop a powerful, easy-to-adjust, and scalable or on-chip THz emitter is still a challenge. As a new type of THz emitter, a spintronic THz emitter has attracted a great deal of attention due to its advantages of high efficiency, ultrawide band, low cost, and easy integration. In this study, we have proposed a multifield-modulated spintronic THz emitter based on the VO2/Ni/Pt multilayer film structure with a wide band region of 0-3 THz. Because of the pronounced phase transition of the integrated VO2 layer, the fabricated THz emitter can be efficiently modulated via thermal or electric stimuli with a modulation depth of about one order of magnitude; the modulation depths under thermal stimulation and electrical stimulation were 91.8% and 97.3%, respectively. It is believed that this multifield modulated spintronic THz emitter will provide various possibilities for the integration of next-generation on-chip THz sources and THz modulators.

Tempering Multichannel Photon Emission from Emitter-Coupled Holographic Metasurfaces.

On-chip manipulation of photon emission from quantum emitters (QEs) is crucial for quantum nanophotonics and advanced optical applications. At the same time, the general design strategy is still elusive, especially for fully exploring the degrees of freedom of multiple channels. Here, the vectorial scattering holography (VSH) approach developed recently for flexibly designing QE-coupled metasurfaces is extended to tempering the strength of QE emission into a particular channel. The VSH power is demonstrated by designing, fabricating, and optically characterizing on-chip QE sources emitted into six differently oriented propagation channels, each representing the entangled state of orthogonal circular polarizations with different topological charges and characterized with a specific relative strength. We postulate that the demonstration of tempered multichannel photon emission from QE-coupled metasurfaces significantly broadens the possibilities provided by the holographic metasurface platform, especially those relevant for high-dimensional quantum information processing.

Agile THz-range spectral multiplication of frequency combs using a multi-wavelength laser

A breakthrough technology, on-chip frequency comb sources offer broadband combs while being compact, energy-efficient, and cost-effective solutions for various applications from lidar to telecommunications. Yet, these sources encounter a fundamental trade-off between controllability and bandwidth: broadband combs, generated in microresonators, lack free-spectral range or spectral envelope control, while combs generated with electro-optic modulators can be carefully tailored but are limited in bandwidth. Here, we overcome this trade-off through agile spectral multiplication of narrowband combs. Exploiting the nonlinear dynamics of a multi-wavelength laser under modulated optical injection, we achieve spectral multiplication at frequency offsets from 26 GHz to 1.3 THz. Moreover, on-chip control allows for nano-second switching of the frequency offset. Compatible with generic platforms, our approach can be scaled up to cover several THz. When combined with THz photomixers, our system could enable low-cost, compact, and power-efficient THz comb sources, paving the way towards a new generation of THz applications.

Wafer-scale fabricated on-chip thermionic electron sources based on a suspended Y2O3/TiN filament

Wafer-scale fabricated on-chip thermionic electron sources based on a suspended Y₂O₃/TiN filament

Design and evaluation of EMPIX2, a 100 kfps, high dynamic range pixel detector readout ASIC for electron microscopy

EMPIX2 is a novel hybrid pixel detector readout ASIC for electron microscopy with a maximum frame rate of 100 kfps and a very large dynamic range (5 × 105:1). It features 128 × 128 square pixels at a pitch of 150 μm. Adaptive gain switching and charge pump technology are applied to enhance the dynamic range. The pixels can operate in two modes: pulse mode and continuous mode. In pulse mode, ultra-fast gain switching enables a rapid response to pulsed electron sources, making it highly suitable for UEM applications. In continuous mode, the power consumption and dynamic range are optimized for STEM applications. The readout is frame-based, and digital image data is output by 64 pairs of LVDS drivers working in DDR mode at a clock frequency of 400 MHz. A dedicated data acquisition system was developed for the transmission and processing of the image data. Preliminary verification of the readout chip was performed using an on-chip calibration source.

Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe2

Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on-chip sources of quantum light. Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe2 via nanoindentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale and reconstruct the details of the surrounding local strain potential. The obtained results suggest that the origin of the observed single-photon emission is likely related to strain-induced spectral shift of dark excitonic states and their hybridization with localized states of individual defects.

A Photonic Spectrum Analyzer for Waveguide-Coupled Sources in the Terahertz Range

Signals in the terahertz range are mainly wireless, waveguide-bound or on-chip signals. To measure their spectral power, linewidth and harmonics, usually spectrum analyzers are used. Here we present a photonic spectrum analyzer for waveguide-bound signals for the frequency range from 450 GHz to 1.05 THz with the possibility to extend its operation to on-chip signals. Therefore, a photonically generated local oscillator frequency is used to downconvert the signal under test within a photoconductor. A Vivaldi antenna feeds the signal from a dielectric waveguide to the photoconductor. This allows the measurement of any signal that can be transported via a dielectric waveguide. We show details on the transition from a rectangular metallic hollow waveguide to a dielectric waveguide and spectral measurements of a rectangular metallic hollow waveguide source. The same transition can also be used to attach metallic waveguide-coupled ground-source-ground probes in order to characterize on-chip sources.