On-chip Light Research Articles

Experimental demonstration of an on-chip spatial light receiver based on inverse design in free-space optical communication

Experimental demonstration of an on-chip spatial light receiver based on inverse design in free-space optical communication

Electrically tunable graded photonic crystal lens based on graphene plasmons.

Controlling the nonlinear relationship between surface plasmon polariton (SPP) mode index and chemical potential of graphene can be used in the field of active transformation optics. Here, we propose an electrically tunable 2D Graded Photonic Crystal (GPC) lens based on graphene SPP platform. Our platform comprises a graphene monolayer integrated into a back-gated structure with nano-patterned gate insulators. When the chemical potential of the graphene surface is designed to operate in the nonlinear region, the designed GPC lens can be continuously transformed between a Maxwell's fish-eye lens and a Luneburg lens by tuning the gate voltage. The range of the lens background chemical potential for allowing this transformation is systematically studied. To compensate for the significant errors inherent in the conventional effective medium theory (EMT) during the homogenization of photonic crystals (PCs), we propose a generalized effective medium theory (GEMT). The validity and accuracy of this approach are verified through comparisons with true values (based on rigorous eigenvalue solutions) and EMT values. Due to its advantages of on-site controls and easy fabrication characteristics, the proposed graphene GPC provides a new way for practical on-chip light manipulation.

Slow-wave-enhanced on-chip Michelson interferometer sensor: erratum.

The device described in our earlier paper [Opt. Lett.48, 5968 (2023)10.1364/OL.500033] as a slow wave enhanced on-chip Michelson interferometer sensor is correctly designated as a slow wave enhanced on-chip loop terminated Mach-Zehnder interferometer sensor. In the earlier paper, we experimentally demonstrated slow wave enhanced phase and spectral sensitivity in asymmetric loop-terminated Mach-Zehnder interferometer (LT-MZI) sensors. Compared to Mach-Zehnder interferometers (MZI) that experimentally demonstrated a phase sensitivity 84,000 rad/RIU-cm, the reflected path enhancement of the optical path length coupled with slow light enhancement with photonic crystal waveguides in on-chip slow light loop-terminated Mach-Zehnder interferometer sensors resulted in experimentally demonstrated phase sensitivity 277,750 rad/RIU-cm with theoretical phase sensitivity as high as 461,810 rad/RIU-cm, at the same form factor as the MZI of identical interferometer arm lengths.

Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge

The first-principles calculations have recently shown that implanting sufficient noble gas atoms into germanium (Ge) can expand its lattice to achieve the desired tensile strain for indirect-to-direct bandgap transition to develop the on-chip high-efficient light emitter. Here, to experimentally prove this strain-doping concept, we implant argon (Ar) ions into Ge and then recrystallize the Ar-doped amorphous Ge (a-Ge) layer using nanosecond laser annealing (NLA) and furnace thermal annealing (FTA), respectively. The NLA effectively recrystallizes the 12 nm thick a-Ge layer with minimal loss of Ar dopants, while FTA fails to fully recrystallize it and results in significant loss of Ar dopants. The regrown Ge layer with Ar concentration above the critical value (0.8%) for bandgap transition is 3.8 nm thick, making it a challenge to distinguish the photoluminescence signal of strain-doped layer from the substrate. To overcome this, increasing the implantation energy and adding a capping layer may be necessary to further prevent Ar loss and achieve a strain-doped layer with sufficient depth. These findings provide promising view of the strain-doping concept for direct-bandgap emission from Ge.

Monolithically Structured van der Waals Materials for Volume-Polariton Refraction and Focusing.

Polaritons, hybrid light and matter waves, offer a platform for subwavelength on-chip light manipulation. Recent works on planar refraction and focusing of polaritons all rely on heterogeneous components with different refractive indices. A fundamental question, thus, arises whether it is possible to configure two-dimensional monolithic polariton lenses based on a single medium. Here, we design and fabricate a type of monolithic polariton lens by directly sculpting an individual hyperbolic van der Waals crystal. The in-plane polariton focusing through sculptured step-terraces is triggered by geometry-induced symmetry breaking of momentum matching in polariton refractions. We show that the monolithic polariton lenses can be robustly tuned by the rise of van der Waals terraces and their curvatures, achieving a subwavelength focusing resolution down to 10% of the free-space light wavelength. Fusing with transformation optics, monolithic polariton lenses with gradient effective refractive indices, such as Luneburg lenses and Maxwell's fisheye lenses, are expected by sculpting polaritonic structures with gradually varied depths. Our results bear potential in planar subwavelength lenses, integrated optical circuits, and photonic chips.

2.1 µm multi-quantum well laser epitaxially grown on on-axis (001) InP/SiO2/Si substrate fabricated by ion-slicing

A cost-effective method to achieve a 2-3 µm wavelength light source on silicon represents a major challenge. In this study, we have developed a novel approach that combines an epitaxial growth and the ion-slicing technique. A 2.1 µm wavelength laser on a wafer-scale heterogeneous integrated InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technique was achieved by epitaxial growth. The performance of the lasers on the InPOI are comparable with the InP, where the threshold current density (Jth) was 1.3 kA/cm2 at 283 K when operated under continuous wave (CW) mode. The high thermal conductivity of Si resulted in improved high-temperature laser performance on the InPOI. The proposed method offers a novel means of integrating an on-chip light source.

Dielectric topological metasurfaces based in-plane control of light propagation by using valley degrees of freedom

Metasurface has garnered widespread attention due to its remarkable ability of precise light manipulation. The emergence of topological photonics has brought novel topological phenomena and holds the promise of introducing new optical functionalities to the metasurfaces. In this paper, by introducing valley degrees of freedom into metasurfaces, we design and numerically simulate topological-nanostructure-enabled on-chip chiral light propagation and multistage beam splitting, as well as holographic display by integrating a beam-splitting metasurface with valley photonic crystals (VPCs). Importantly, the proposed on-chip topological optical devices exhibit broadband response covering 1480–1660 nm and low transmission losses with the maximum efficiency reaching 82 %. Our work is expected to bring new optical functionalities to the metasurface based devices and can be widely applied in fields of optical fiber communications, on-chip optical transportation and smart wearable devices, which require high-efficiency, broadband and highly-integrated optoelectronic elements and devices.

On-chip optical wavefront shaping by transverse-spin-induced Pancharatanam-Berry phase.

Pancharatnam-Berry (PB) metasurfaces can be applied to manipulate the phase and polarization of light within subwavelength thickness. The underlying mechanism is attributed to the geometric phase originating from the longitudinal spin of light. Here, we demonstrate, to the best of our knowledge, a new type of PB geometric phase derived from the intrinsic transverse spin of guided light. Using full-wave numerical simulations, we show that the rotation of a metallic nano-bar sitting on a metal substrate can induce a geometric phase covering 2π full range for the surface plasmons carrying an intrinsic transverse spin. Especially, the geometric phase is different for the surface plasmons propagating in opposite directions due to spin-momentum locking. We apply the geometric phase to design metasurfaces to manipulate the wavefront of surface plasmons to achieve steering and focusing. Our work provides a new mechanism for on-chip light manipulations with potential applications in designing ultra-compact optical devices for imaging and sensing.

Bound-Extended Mode Transition in Type-II Synthetic Photonic Weyl Heterostructures.

Photonic structures with Weyl points (WPs), including type I and type II, promise nontrivial surface modes and intriguing light manipulations for their three-dimensional topological bands. While previous studies mainly focus on exploring WPs in a uniform Weyl structure, here we establish Weyl heterostructures (i.e., a nonuniform Weyl lattice) with different rotational orientations in the synthetic dimension by nanostructured photonic waveguides. In this work, we unveil a transition between bound and extended modes on the interface of type-II Weyl heterostructures by tuning their rotational phases, despite the reversed topological order across the interface. This mode transition is also manifested from the total transmission to total reflection at the interface. All of these unconventional effects are attributed to the tilted dispersion of type-II Weyl band structure that can lead to mismatched bands and gaps across the interface. As a comparison, the type-I Weyl heterostructures lack the phase transition due to the untilted band structure. This work establishes a flexible scheme of artificial Weyl heterostructures that opens a new avenue toward high-dimensional topological effects and significantly enhances our capabilities in on-chip light manipulations.

Selection and enhancement of the frequency modes with Floquet exceptional points and chiral Zener tunneling

Mode selecting plays a vital role in the field of optoelectronics, such as optical communication, signal processing, on-chip light manipulation, mode conversion, and frequency synthesis. In this work, flexible selection and enhancement of the frequency modes in an unidirectional coupled Su–Schrieffer–Heeger (SSH) frequency lattice are obtained with Floquet exceptional points (EPs) and chiral Zener tunneling (ZT). The unidirectional coupled non-Hermitian SSH frequency lattices are synthesized by a double-ring system with complex dynamical modulations. Under an effective direct current (dc) force induced by the phase-mismatching of the modulations, the two Floquet bands of the non-Hermitian frequency lattices are degenerated and the Floquet EPs arise. Therefore, the unidirectional and irreversible frequency mode conversion takes place, which is the chiral ZT. Moreover, through perturbation analysis and numerical simulations, we prove that the frequency modes of the two-band system can be selected and enhanced by a multi-photon resonance dc force.

Multifunctional metalens optical tweezers for optical information recognition.

Traditional optical information recognition (OIR), particle capture and manipulation require many optical devices or mechanical moving system components to achieve a specific function, which is difficult to achieve integration. This paper proposes a new method to realize these functions by using multi-focus metalens combining spectrum and polarization selection. The design incorporates three spectral bands, namely 500 nm, 580 nm, and 660 nm, within the visible light range. Additionally, it utilizes either left-handed or right-handed circularly polarized (LCP/RCP) light, resulting in six distinct focus focusing effects on a single focal plane. By analyzing the normalized light intensity (NLI) at the corresponding focus position, the OIR of any wavelength and polarization detection in the design can be realized, and the particle capture at different focusing positions can be realized. Our work can provide a new idea for the high integration of on-chip light recognition and operation and inspire the design of a highly integrated optical system with a smaller size and more substantial function.

Remarkable emission enhancement of CsPbBr3 quantum dots based on an Ag nanoparticle-Ag film plasmonic coupling structure.

All-inorganic halide perovskite quantum dots (QDs) have recently received much attention due to their excellent optoelectronic properties. And their emission properties still need to be improved for further applications. Here, we demonstrated a remarkable emission enhancement of the CsPbBr3 QDs based on an Ag nanoparticle-Ag film plasmonic coupling structure. Through precise control of the gap distance between Ag nanoparticle and Ag film, the localized surface plasmon resonance (LSPR) peak was tuned to match the emission wavelength of the CsPbBr3 QDs. We achieved a 30-fold fluorescence intensity enhancement and a lower lasing threshold, which is 25% of that of the CsPbBr3 QDs without plasmonic coupling structure. It is attributed to that the plasmonic coupling structure exhibits an extremely strong local electric field owing to the coupling between LSPR of Ag nanoparticle and surface plasmon polariton of Ag film. This work provides an effective way to enhance the optical emission of perovskite QDs and promotes the further exploration of on-chip light source.

Probing the infrared properties of a p-doped Ge0.938Sn0.062 thin film via polarization-dependent FTIR spectroscopy

The complex relative permittivity of doped Ge1−xSnx thin films (realized using state-of-the-art growth techniques) are obtained by devising a methodology based upon polarization-dependent reflection measurements along with multi-layer Fresnel reflection equations. The developed approach is implemented to acquire the complex relative permittivity of a 170-nm-thick Ge1−xSnx film exhibiting a hole carrier concentration of 3.3 × 1019 cm−3 and x = 6.2%, with this Sn composition suggesting the film is on the cusp of exhibiting a direct bandgap. The investigation conducted on this thin film as well as the developed methodology are expected to further establish Ge1−xSnx as the primary semiconductor for on-chip light emission and sensing devices.

On-chip light sheet illumination for nanoparticle tracking in microfluidic channels.

A simple and inexpensive method is presented to efficiently integrate light sheet illumination in a microfluidic chip for dark-field microscopic tracking and sizing of nanoparticles. The basic idea is to insert an optical fiber inside a polydimethylsiloxane (PDMS) elastomer microfluidic chip and use it as a cylindrical lens. The optical fiber is in this case no longer seen as only an optical waveguide but as a ready-made micro-optical component that is inexpensive and easy to source. Upon insertion, the optical fiber stretches the PDMS microchannel walls, which has two effects. The first effect is to tone down the intrinsic ripples in the PDMS that would otherwise create inhomogeneities in the light sheet illumination. The second effect is to remove any obliqueness of the channel wall and constrain it to be strictly perpendicular to the propagation of the illumination, avoiding the formation of a prismatic diopter. Through calculations, numerical simulations and measurements, we show that the optimal configuration consists in creating a slowly converging light sheet so that its axial thickness is almost uniform along the tracked area. The corresponding thickness was estimated at 12 μm, or 10 times the depth of field of the optical system. This leads to an at least six-fold increase in the signal-to-noise ratio compared to the case without the cylindrical lens. This original light-sheet configuration is used to track and size spherical gold nanoparticles with diameters of 80 nm and 50 nm.

Integrated photonics beyond communications

The development of photonic integrated circuits has historically been driven by communications. However, emerging markets and opportunities require platforms that can operate over a broader wavelength range, offer additional capabilities, or improve performance. This paper provides a perspective on these emerging opportunities and the most promising approaches for addressing them, with a focus on platforms that support on-chip light generation and amplification.

Slow-wave-enhanced on-chip Michelson interferometer sensor.

We experimentally demonstrated slow-wave-enhanced phase and spectral sensitivity in asymmetric Michelson interferometer (MI) sensors. Compared to Mach-Zehnder interferometers (MZI) that experimentally demonstrated a phase sensitivity of 84,000 rad/RIU-cm, the reflected path enhancement of the optical path length coupled with slow light enhancement with photonic crystal waveguides in on-chip slow light Michelson interferometer sensors resulted in experimentally demonstrated phase sensitivity of 277,750 rad/RIU-cm with theoretical phase sensitivity as high as 461,810 rad/RIU-cm, at the same form factor as the MZI of identical interferometer arm lengths.

Hybrid Si-GaAs photonic crystal cavity for lasing and bistability.

The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to integrate such heterogeneous Si/III-V devices, but it remains unclear how to utilize these modes to achieve photonic crystal cavities. Herein, using 3D finite-difference time-domain simulations, we propose a hybrid Si-GaAs photonic crystal cavity design that operates at telecom wavelengths and can be fabricated without requiring careful alignment. The hybrid cavity consists of a patterned silicon waveguide that is coupled to a wider GaAs slab featuring InAs quantum dots. We show that by changing the width of the silicon cavity waveguide, we can engineer the hybrid modes and control the degree of coupling to the active material in the GaAs slab. This provides the ability to tune the cavity quality factor while balancing the device's optical gain and nonlinearity. With this design, we demonstrate cavity mode confinement in the GaAs slab without directly patterning it, enabling strong interaction with the embedded quantum dots for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 µW, respectively). This heterogeneous integration of an active III-V material with silicon via a hybrid cavity design suggests a promising approach for achieving on-chip light generation and low-power nonlinear platforms.

Flatband polaritonic router in twisted bilayer van der Waals materials.

In recent years, van der Waals (vdW) polaritons excited by the hybrid of matter and photons have shown great promise for applications in nanoimaging, biosensing, and on-chip light guiding. In particular, polaritons with a flatband dispersion allow for mode canalization and diffractionless propagation, which showcase advantages for on-chip technologies requiring long-range transportation of optical information. Here, we propose a flatband polaritonic router based on twisted α-MoO3 bilayers, which allows for on-chip routing of highly confined and low-loss phonon polaritons (PhPs) along multichannel propagating paths under different circular polarized dipole excitations. Our work combines flatband physics and optical spin- orbit coupling, with potential applications in nanoscale light propagation, on-chip optical switching, and communication.

Low-loss skimming waveguides with controllable mode leakage for on-chip saturable absorbers

Abstract Emerging 3D photonic circuits would greatly benefit from the ability to integrate skimming waveguides with low loss and controllable inscription depth into photonic circuits. These waveguides allow for the interaction of guiding light directly with external modulation signals and enable programmable photonic circuits. Here, we report the fabrication of a novel photonic-lattice-like skimming waveguide (PLLSW) using femtosecond laser writing. Our method enables fine control of cross-sectional symmetry and writing depth of waveguides, achieving a minimum depth of 1 μm and a low insertion loss of 1 dB. Based on the PLLSW, we demonstrate on-chip light modulation by designing an evanescent-field-type saturable absorber through the coupling of a carbon nanotube film with the PLLSW, which exhibits saturation intensity from 20 to 200 MW/cm2 through the balanced twin-detector measurement. The strong nonlinear optical response of the PLLSW-based saturable absorber is further exploited to drive a Q-switched pulse laser at 1550 nm based on a fiber laser cavity. Our work demonstrates an effective method to integrate nonlinear optical materials into a glass chip for all-optical switching based on 3D waveguides, which holds great potential for the construction of large-scale programmable photonic circuits in the future.

A simplified laser-to-chip edge coupling scheme using 3D SU-8 taper

In this work, we design and simulate a three-dimensional (3D) SU-8 tapered edge coupler for effectively guiding light from an edge-emitting semiconductor laser diode directly to a silicon waveguide to realize a hybrid on-chip silicon light source. A series of coupling efficiencies for the commonly used top silicon thicknesses of the silicon-on-insulator wafers from 220 to 3000 nm are obtained, showing that this polymer taper can largely improve the coupling efficiency when the silicon waveguide thickness is moderate, for instance, from 41% (with no taper) to 67% for the 700 nm- thick silicon waveguide under 1 μm gap offset and relax the lateral misalignment tolerance to above one micron by suppressing the butt refractive index contrast and the mode mismatch between the laser diode and the silicon waveguide. Wave transformation inside the tapered coupler and the input silicon waveguide has also been revealed by 3D finite-difference time-domain simulations. This 3D tapered coupler is cost effective and easily fabricated which can have wide practical applications in massive production of various silicon photonic chips based on the present complementary metal-oxide-semiconductor foundry.