Abstract
The complex relative permittivity of doped Ge1−xSnx thin films (realized using state-of-the-art growth techniques) are obtained by devising a methodology based upon polarization-dependent reflection measurements along with multi-layer Fresnel reflection equations. The developed approach is implemented to acquire the complex relative permittivity of a 170-nm-thick Ge1−xSnx film exhibiting a hole carrier concentration of 3.3 × 1019 cm−3 and x = 6.2%, with this Sn composition suggesting the film is on the cusp of exhibiting a direct bandgap. The investigation conducted on this thin film as well as the developed methodology are expected to further establish Ge1−xSnx as the primary semiconductor for on-chip light emission and sensing devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
