Bismuth oxyhalide (BiOX) represents a class of layered materials distinguished by unique physicochemical and optical characteristics. This study delivers an extensive investigation into the properties of BiOX crystals, employing first-principles calculations to analyze the electronic band structure, projected density of states (PDOS), Raman and infrared (IR) spectra, dielectric functions, alongside phonon and thermodynamic properties. The computed electronic band gaps BiOI, BiOBr, BiOCl, and BiOF crystals were determined to be 2.19 eV, 3.05 eV, 3.29 eV, and 3.43 eV, respectively. Furthermore, an analysis of the PDOS for each BiOX type indicates that the valence band maximum (VBM) primarily comprises dominant O 2p and halide X np states, while the conduction band minimum (CBM) predominantly features Bi 6p states. In addition, significant absorption edges for BiOI, BiOBr, BiOCl, and BiOF crystals, oriented along the [100] axis, were observed at wavelengths of 540 nm, 449 nm, 367 nm, and 320 nm, respectively. The Raman spectral analysis revealed a noticeable shift correlating with the increasing number of halogen atoms, with intensity enhancements observed at elevated temperatures. Phonon dispersion studies corroborated the geometric stability of the optimized structures of BiOX crystals. Thermodynamic evaluations suggested that BiOX materials exhibit qualities characteristic of hard materials at higher temperatures while displaying softer material attributes at lower temperatures. In summary, this research substantially enriches the current understanding of bismuth oxyhalides by detailing their structural, electronic, optical, phonon, and thermodynamic properties. The findings presented in this study provide a foundational basis for future advancements in photocatalytic applications and material development.