P-n Junction Research Articles

Operation mode-switchable photodetector with a pn junction local-floating gate

The photodetectors are critical elements in state-of-the-art technology; however, it is still challenging to realize simultaneously high detectivity and responsivity for the fixed operation mode configuration. In this work, we propose a pn junction local-floating gate photodetector (PNLFG-PD) based on a two-dimensional p-WSe2/n-MoS2 heterojunction, where n-type MoS2 is partly floated on the p-WSe2 channel. The device exhibits the switchable mode between the Λ-shaped anti-ambipolar conduction in dark and the unipolarity conduction of p-type under illumination. Subsequently, the high responsivity of 2.12×105 A/W and detectivity of 1.25×1014 Jones are simultaneously obtained at 2 V bias and 405 nm illumination of 370 μW light power, resulting in high light/dark ratio over 106 attributed to barrier lowering in the channel. This work provides a particular platform to overcome the tradeoff between detectivity and responsivity for the high-performance photodetection.

Facile Synthesis of Bandgap-Engineered N-Doped MgO/g-C3N4 Nanocomposites for Enhanced Sunlight-Driven Photocatalytic Degradation of Organic Dyes

This study tests the theory of using a p-n junction to inhibit the recombination of photo-generated electrons and holes in N-MgO/g-C3N4 for the photocatalytic degradation of methylene blue (MB) dye. While the use of n-type semiconductor junctions with g-C3N4 for bandgap narrowing is well-studied in dye degradation, this research explores the innovative application of nitrogen (N)-doped MgO to create a p-type junction with n-type g-C3N4. The N-MgO/g-C3N4 nanocomposites were designed and synthesized to leverage both the bandgap narrowing effect and the formation of a p-n junction. The results demonstrate that these nanocomposites can effectively degrade MB dye under sunlight, achieving over 90% degradation efficiency with a bandgap of 2.63 eV. Under high pH conditions, the degradation efficiency further increased to 94%. The enhanced photocatalytic activity of the N-MgO/g-C3N4 composite is attributed to the formation of a heterojunction, which facilitates efficient separation and transmission of photo-induced charge carriers. This study discusses the detailed mechanism of this enhanced activity, emphasizing the role of the p-n junction in promoting effective charge separation and transfer, thereby improving the photocatalytic performance under sunlight.

Achieving Ultrafast Charge Transfer by Engineering Multiple Pn Junctions in 3D Hierarchical Cathodes Toward Photo-Chargeable Zinc-Organic Batteries.

Photo-charging zinc ion batteries (PCZIBs) emerge as an innovative approach for the effective utilization and storage of solar energy. However, challenges originating from the suboptimal accessibility of photoexcited charges to electroactive sites severely restrict their practical applications. Herein, a facile methodology to balance light utilization and electrochemical performance by constructing multiple pn junctions in a 3D hierarchical PTCDA-SP/CuZnS photoelectrochemical cathode is reported. DFT calculations reveal that p-type CuZnS can adjust the local electronic environment of n-type PTCDA-SP, facilitating the formation of multiple pn junctions among the interface of this cathode. This unique nanostructure significantly promotes ultrafast charge transfer within 3ps and prevents other undesirable excited state decay pathways, as well as boosts ultrashort photo-response relaxation time less than 20s, resulting in high values of both photo current and voltage of 72.1µA cm-2 and 813mV cm-2 respectively. Additionally, all these carbonyls are responsible for photoelectrochemical Zn2+ storage cascade, ensuring significant improvements in reversible capacities (ca. 32%). This study describes a paradigm of building pn junction on 3D hierarchical cathodes to construct high-performance PCZIBs.

Nanograting p-n Junctions with Enhanced Charge Confinement

Recently, geometry-induced quantum effects in a new quasi-1D system, or nanograting (NG) layers, were introduced and investigated. Dramatic changes in band structure and unconventional photoluminescence effects were found in silicon quantum wells with high-energy barriers. Nanograting metal–semiconductor junctions were fabricated and investigated. Here, we report the latest results on a special type of p-n junction in which the charge confinement of the NG is enhanced. The reverse bias dark current is increased in contrast to the metal–semiconductor junctions. When such a junction works as a photovoltaic cell, NG significantly increases short-circuit current and conversion efficiency without affecting open-circuit voltage. These effects are explained by the formation of geometry-induced excitons. To distinguish exciton formation from G-doping effects, we fabricated NGs in both n-type and p-type top layers and obtained qualitatively the same results. To further verify the excitonic mechanism, we analyzed photoluminescence spectrums previously obtained from NG and other NG-like periodic structures. The collected experimental results and previous findings are well explained by the formation of geometry-induced excitons and corresponding quasi-flat bands. Geometry-induced quantum effects can be used to significantly increase the conversion efficiency of photovoltaic cells and enhance the characteristics of other optoelectronic devices.

Interface structure of PN junctions in NiO–WO3–FTO photoelectrode for efficient DSSCs and enhanced photoresponses

In the current global energy crisis, dye-sensitized solar cells (DSSCs) with excellent performance and loaded with P/N type semiconductor heterojunctions (PN junctions) has attracted huge attention in renewable energy research. This study reports the unique energy level structure and synergistic effect of the PN junction interfaces in response to light. Photoelectrodes containing NiO–WO3 nano-powder (NPs) layers were synthesized on fluorine-doped tin oxide (FTO) substrates by a simple method, which can respond to full-spectrum absorption of sunlight. In this study, the carrier densities in the P-type and N-type semiconductor heterojunctions at a light intensity of 2 SUN (2000 W/m2) were 1.38 × 1028 m−3 and 4.27 × 1028 m−3, respectively. These values are 2.7 and 1.9 times higher than those in dark conditions, indicating that the electrode excels in converting light into electrical energy, outperforming other reported results. Although PN junctions are often used in applications such as DSSCs and energy storage devices, the photoresponses of the heterojunction energy band structure still need to be elucidated. In this work, the analysis of the charge depletion region width revealed the electron transfer mechanism during the charge and discharge process under light illumination. Additionally, the electrochemical experiment demonstrated the impact of space charge at the interface on the energy levels. Furthermore, by studying the energy level structure of the PN junction, it was confirmed that the internal resistance decreases and the photocurrent increases under light conditions. The design and application flexibility of the PN junctions were verified based on these results and the possible applications of this photoelectrode in solar cells were elucidated.

Design and research of high voltage β-Ga2O3/4H-SiC heterojunction LDMOS

Abstract In recent years, gallium oxide (Ga2O3), one of the ultra-wide band-gap semiconductor materials, has been regarded as one of the most promising materials in the field of high-voltage and high-power electronic devices in the future because of its unique electrical properties and low preparation cost. However, it is difficult for β-Ga2O3 materials to form effective P-type doping, so the PN junction is not formed in most of its power devices, which greatly limits the improvement of its voltage resistance. A novel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) is proposed to realize a junction β-Ga2O3 power device and improve the voltage resistance performance of β-Ga2O3 power devices. In this device, a β-Ga2O3 power device with a junction is realized by using P-type 4H-SiC to form a PN junction with N-type β-Ga2O3, and the voltage resistance of the β-Ga2O3 power device is improved. Sentaurus TCAD software was used to simulate the device structure and electrical performance. The device is optimized by adjusting the length of the drift zone, drift zone concentration, SiC channel concentration, and gate oxide thickness. Optimized, the device exhibits a positive threshold voltage of 3.42 V, a breakdown voltage of 2203 V, a specific on-resistance of 7.80 mΩ·cm2, and a power figure of merit of 622 MW cm−2. The results show that the heterojunction device is significant for realizing high-performance junction β-Ga2O3 power devices.

Innovative active terahertz modulator based on dynamic graphene-silicon arrays

This paper presents an innovative active terahertz (THz) modulator that utilizes dynamic graphene-silicon arrays (DGSAs) to overcome the challenges of dynamically manipulating THz waves. The DGSA combines the exceptional electrical properties of graphene with the enhanced optical absorption capabilities of silicon arrays, enabling dual-mode active control through optical pumping and electrical biasing. An 808 nm laser is used to photoexcite carriers in the silicon arrays for optical pumping while a bias voltage modulates the Fermi level of graphene, subsequently varying Si conductivity and influencing the transmission properties of THz waves. Simulations have demonstrated modulation depths of up to 94% at 2.5 THz in the transmission mode and 89% at 1 THz in the reflection mode. Furthermore, this study delves into a theoretical analysis and numerical simulations, exploring the modulation mechanisms, including the role of graphene’s Drude model and PN junction effects. These insights provide a robust theoretical framework for understanding the DGSA’s operation and lay a solid foundation for the design and optimization of high-performance THz modulation devices.

Analyzing the PN junction impedance of crystalline silicon solar cells across varied illumination and temperature conditions

The impedance of solar cells can be leveraged for a variety of innovative applications. However, for the continued advancement of such applications, it is crucial to understand how the impedance varies during practical operation. This work characterizes the impedance of modern crystalline silicon solar cells across different bias voltages and under varying illumination and temperature conditions. It is found that for a given bias voltage, variations in temperature have a notably stronger impact on PN junction impedance than changes in irradiance. However, during maximum power point (MPP) tracking, variations in irradiance have a larger influence on the PN junction impedance than temperature variations. This is related to the shifting operating voltage during operation. Furthermore, it is shown that the capacitance during practical operation can strongly vary for different solar cells. For instance, the areal MPP capacitance values of the two cells tested in this study at 0.1 sun irradiance and a temperature of 30 °C were 0.283 μF/cm2 and 20.2 μF/cm2, a 71-fold difference. Conversely, the range of the MPP diffusion resistance was found to be highly similar for different cells. The results of this study enhance the understanding of solar-cell impedance and have a broad applicability.

Rectified electrical transport and self-powered photoresponse in ZnTe/WS2 heterostructures

Semiconductor heterostructures have attracted widespread attention due to their applications in light-emitting diodes, solar cells, and photodetectors. In this work, a novel heterostructure consisting of ZnTe nanobelt and WS2 monolayer nanosheet was constructed by combining physical transfer with vapor deposition routes. The I-V curve of ZnTe/WS2 heterostructure device displays a rectification ratio of approximately 50, which can be attributed to the formation of PN junction. The derived photovoltaic effect enables self-powered photodetection. Additionally, light imaging measurements show that the achieved ZnTe/WS2 Photodetectors have good imaging capabilities under 405 nm light irradiation. These results reveal that such ZnTe/WS2 heterostructures are excellent candidates for optoelectronic applications.

Analysis of degradation mechanism in polycrystalline silicon thin-film transistors under dynamic off-state stress with fast transition time

Abstract This study represents the investigation into the degradation of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under dynamic off-state stress, with a focus on transition times as rapid as 1 nanosecond (ns). The study found that dynamic off-state stress with larger amplitude leads to more severe device degradation. Unlike previous studies, both the rising time (t r ) and falling time (t f ) of the pulse significantly influence the hot carrier (HC) degradation in the poly-Si TFTs. The on-state current degradation rate (ΔI on ) after 104 s stress dramatically increases from 11.8% to 80.8% when t r decreases from 500 ns to 1 ns. When t f decreases from 500 ns to 1 ns, ΔI on also dramatically increases from 22.9% to 69.2%. Combined with transient simulations, the source of the carrier for HC degradation is clarified and consequently, a non-equilibrium PN junction degradation model modulated by accumulated electrons is developed.

Feasibility of Exceeding 20% Efficiency for Kesterite/c-Silicon Tandem Solar Cells Using an Alternative Buffer Layer: Optical and Electrical Analysis.

Tandem solar cells have the potential to be more efficient than the Shockley-Queisser limit imposed on single junction cells. In this study, optical and electrical modeling based on experimental data were used to investigate the possibility of boosting the performance of kesterite/c-Si tandem solar cells by inserting an alternative nontoxic TiO2 buffer layer into the kesterite top subcell. First, with SCAPS-1D simulation, we determined the data reported for the best kesterite (CZTS (Eg = 1.5 eV)) device in the experiments to be used as a simulation baseline. After obtaining metric parameters close to those reported, the influence on the optoelectronic characteristics of replacing CdS with a TiO2 buffer layer was studied and analyzed. Different top subcell absorbers (CZTS0.8Se0.2 (Eg = 1.4 eV), CZTS (Eg = 1.5 eV), CZTS (Eg = 1.6 eV), and CZT0.6Ge0.4S (Eg = 1.7 eV)) with different thicknesses were investigated under AM1.5 illumination. Then, to achieve current matching conditions, the c-Si bottom subcell, with an efficiency at the level of commercially available subcells (19%), was simulated using various top subcells transmitting light calculated using the transfer matrix method (TMM) for optical modeling. Adding TiO2 significantly enhanced the electrical and optical performance of the kesterite top subcell due to the decrease in parasitic light absorption and heterojunction interface recombination. The best tandem device with a TiO2 buffer layer for the top subcell with an optimum bandgap equal to 1.7 eV (CZT0.6Ge0.4S4) and a thickness of 0.8 µm achieved an efficiency of approximately 20%. These findings revealed that using a TiO2 buffer layer is a promising way to improve the performance of kesterite/Si tandem solar cells in the future. However, important optical and electrical breakthroughs are needed to make kesterite materials viable for tandem applications.

Self‐Powered and Vis‐Infrared Broadband Gr/InSe/MoTe2 Heterostructure Photodetectors with Ultra‐Fast Response and Low Dark Current

AbstractSelf‐powered photodetection devices, which meet the requirement of environmental sustainability, are widely designed by PN heterojunctions. The design of the semiconductor/metal interface is vital in PN‐junction devices. In particular, the elevated potential barrier at the metal/semiconductor interface impedes efficient carrier transport. Therefore, optimizing the semiconductor/metal interface for the PN junction, either by reducing the interface barrier or leveraging the built‐in electric field within the Schottky junction, holds significant importance in enhancing the performance of PN‐junction devices. In this study, an InSe/MoTe2 Type‐II PN heterojunction photodetector is constructed, with graphene (Gr) and gold (Au) serving as electrodes in contact with InSe and MoTe2, respectively. Benefiting from the reduced barrier in Au/InSe interfaces and the built‐in electric field formed at the InSe/MoTe2 and MoTe2/Au interfaces in the same direction, the device achieves an ultra‐fast photoresponse speed of 14 µs and an ultra‐low dark current of 8.5 × 10⁻¹⁴ A at zero bias. Furthermore, the device exhibits a remarkable light on/off ratio up to 105 and achieves broad‐spectrum photodetection ranging from the visible to infrared wavelength. This research highlights the enormous potential of the Gr/InSe/MoTe2 van der Waals heterostructure in the realms of self‐powered photodetection, imaging, and optical communication.

Overcoming the Open-Circuit Voltage Losses in Narrow Bandgap Perovskites for All-Perovskite Tandem Solar Cells.

Narrow-bandgap (NBG) perovskite solar cells based on tin-lead mixed perovskite absorbers suffer from significant open-circuit voltage (V OC) losses due primarily to a high defect density and charge carrier recombination at the device interfaces. In this study, the V OC losses in NBG perovskite single junction cells (E g = 1.21 eV) are addressed. The optimized NBG subcell is then used to fabricate highly efficient all-perovskite tandem solar cells (TSCs). The improvement in the V OC is achieved via the addition of a thin poly(triarylamine) interlayer between the poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)-based hole transport layer (HTL) and the NBG perovskite. The optimal bilayer HTL results in a champion power conversion efficiency (PCE) of 20.3%, compared to 17.8% of the PEDOT:PSS-based control device. The V OC improvement of the single-junction NBG cell is also successfully transferred to all-perovskite TSC, resulting in a high V OC of 2.00 V and a PCE of 25.1%.

Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D

Indium gallium nitride (InGaN) thin-film solar cell is a promising photovoltaic (PV) device. InGaN’s bandgap is tunable from 0.7 to 3.4 eV and it exhibits a high absorption coefficient exceeding 105 cm−1. Besides, InGaN solar cells can be used in tandem configuration, to effectively absorb the solar spectrum. Previous works found that increased indium (In) concentration leads to inverse relationship between open-circuit voltage (Voc) and power conversion efficiency (PCE) of the solar cell. This leads to deleterious device performance. This study aims to assess the performance of two-terminal InGaN tandem solar cells using SCAPS-1D simulation software. The findings revealed maximum short-circuit current density (Jsc) of 26.19 mA cm−2, open-circuit voltage (Voc) of 2.13 V, fill factor (FF) of 89.68%, and PCE of 30.17% from the tandem device. The results indicate that higher In concentration enhances light absorption and the overall PCE, with tandem cells outperforming single-junction cells. This study makes a valuable contribution to the advancement of high-efficiency solar technology based on InGaN.

Preparation and Photocatalytic Performance of In2O3/Bi2WO6 Type II Heterojunction Composite Materials.

Bismuth-based photocatalytic materials have been widely used in the field of photocatalysis in recent years due to their unique layered structure. However, single bismuth-based photocatalytic materials are greatly limited in their photocatalytic performance due to their poor response to visible light and easy recombination of photogenerated charges. At present, constructing semiconductor heterojunctions is an effective modification method that improves quantum efficiency by promoting the separation of photogenerated electrons and holes. In this study, the successful preparation of an In2O3/Bi2WO6 (In2O3/BWO) II-type semiconductor heterojunction composite material was achieved. XRD characterization was performed to conduct a phase analysis of the samples, SEM and TEM characterization for a morphology analysis of the samples, and DRS and XPS testing for optical property and elemental valence state analyses of the samples. In the II-type semiconductor junction system, photogenerated electrons (e-) on the In2O3 conduction band (CB) migrate to the BWO CB, while holes (h+) on the BWO valence band (VB) transfer to the In2O3 VB, promoting the separation of photoinduced charges, raising the quantum efficiency. When the molar ratio of In2O3/BWO is 2:6, the photocatalytic degradation degree of rhodamine B (RhB) is 59.4% (44.0% for BWO) after 60 min illumination, showing the best photocatalytic activity. After four cycles, the degradation degree of the sample was 54.3%, which is 91.4% of that of the first photocatalytic degradation experiment, indicating that the sample has good reusability. The XRD results of 2:6 In2O3/BWO before and after the cyclic experiments show that the positions and intensities of its diffraction peaks did not change significantly, indicating excellent structural stability. The active species experiment results imply that h+ is the primary species. Additionally, this study proposes a mechanism for the separation, migration, and photocatalysis of photoinduced charges in II-type semiconductor junctions.

Performance study of GaN-based betavoltaic nuclear batteries with 3D interfaces

This study presents a design of a 3D interface simulation model featuring an inverted pyramid structure. Our objective is to forecast the performance of GaN-based betavoltaic nuclear batteries with the PN junction 3D interface structures comparing a practical machining process. Initially, we computed the electron-hole pairs (EHPs) generation rate in GaN materials irradiated by both 63Ni and 147Pm sources using Geant4. Furthermore, we employed COMSOL Multiphysics, a finite element analysis software, to simulate the EHPs transport phenomena within the battery and investigate the influence of structural parameters on the output performance. Despite maintaining thicknesses of the P- and N-regions and consistent doping concentrations (Hp-GaN, Hn-GaN, Na, and Nd) as constants, the simulation results revealed notable disparities in the short-circuit current density (Jsc), open-circuit voltage (Voc), and maximum output power density (Pmax) among batteries irradiated with various radioactive sources. Subsequently, we investigated the output performance of the nuclear battery by altering parameters such as the number of inverted pyramid structures, junction depth, and type of radioactive source. Our investigation revealed that selecting 63Ni as the radioactive source, with Na at 1017 cm−3, Nd at 1014 cm−3, a junction depth of 0.1 μm, and inverted pyramid structures of 25, resulted in the following battery performance parameters: a short-circuit current density (Jsc) of 0.648 μA/cm2, an open-circuit voltage (Voc) of 2.3481 V, and a maximum output power density (Pmax) of 1.2949 μW/cm2. Substituting the radioactive source with 147Pm, the average short-circuit current density, Jsc, increased to 56.865 μA/cm2, and the maximum output power density, Pmax, increased to 94.975 μW/cm2, It's a significant enhancement in output performance.

A hBN/Ga2O3 pn junction diode.

The development of next-generation materials such as hBN and Ga2O3 remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type hBN and n-type Ga2O3, forming a pseudo-vertical pn hBN/Ga2O3 heterojunction device. Rectification ratios > 105 (300K) and [Formula: see text]400 (475K) are observed and are amongst the highest values reported to date for ultra-thin hBN-based pn junctions. The measured current under forward bias is ~2mA, which we attribute to the shallow Mg acceptor level (60 meV), and 0.2 µA at -10V. Critically, device performance remains stable and highly repeatable after a multitude of temperature ramps to 475K. Capacitance-voltage measurements indicate widening the depletion region under increasing reverse bias voltage and a built-in voltage of 2.34V is recorded. The hBN p-type characteristic is confirmed by Hall effect, a hole concentration of [Formula: see text] cm-3 and mobility of 24.8 cm2/Vs is achieved. Mg doped hBN resistance reduces by >108 compared to intrinsic material. Future work shall focus on the optical emission properties of this material system.

Finite Element Analysis of LED Heat Dissipation Performance Based on Graphene Composites

Abstract With the gradual development of integrated circuits to thin, high-performance and versatile of electronic products is becoming more and more powerful, and its integration and assembly density continue to improve, which will lead to the increase of its working power consumption and heat. If not timely treatment of heat dissipation problems, which will lead to heat concentration in the diode PN junction, it will reduce the service life of LED lights, and in severe cases, it will even burn the LED device. Therefore, it is crucial to improve heat dissipation efficiency of LED and reduce the junction temperature of chip. An LED structure with aluminum material and an LED structure with graphene material are analyzed by finite element method to study the heat dissipation efficiency of the graphene material. The results reveal that the heat dissipation effect of high conductivity graphene composites provides a convenient evaluation method for the subsequent use of the new materials. The research in this paper shows that the software simulation method can effectively analyze the thermal conductivity of practical engineering applications.

Dispersion and bandgap feature of coupled Bloch waves in one-dimensional piezoelectric semiconductor phononic crystal with PN junction

Dispersion and bandgap feature of coupled Bloch waves in one-dimensional piezoelectric semiconductor phononic crystal with PN junction

Enhanced solar hydrogen evolution by laminated integration of n+p-SiIP/TiO2/Pt inverted pyramid black Si photocathode

The nano/microstructuring of silicon (Si) via chemical methods has garnered significant attention due to its excellent light-trapping capabilities across a wide spectral range. Current research has predominantly focused on the synthesis of pyramidal-shaped microtextures, which enable two reflections on the surface, while largely overlooking the superior light-trapping potential of inverted pyramid silicon (SiIP) microtextures, which theoretically allow for three reflections. Moreover, there has been limited investigation into the application of inverted pyramid black silicon for solar-driven hydrogen evolution. This study reports the synthesis of uniformly arranged inverted pyramid-textured black silicon using the copper-assisted chemical etching (Cu-ACE) method to enhance the efficiency of solar-driven water splitting for hydrogen production. The formation mechanism and the influence of copper-localized surface plasmon resonance (Cu-LSPR) from Cu nanoparticle (NP) byproducts on photoelectrochemical (PEC) activity were systematically analyzed. To reduce sidewall defects and minimize photogenerated carrier recombination, the surface of the SiIP was treated with tetramethylammonium hydroxide (TMAH). A vertical PN junction was developed through ion implantation to reduce the external bias of the SiIP. Additionally, a uniform TiO₂ antireflective layer was deposited via atomic layer deposition (ALD), reducing the average reflectance of the SiIP-T4 to 5.78 % over the 300–1100 nm wavelength range. MoSₓ and Pt NPs were electrodeposited to improve the fill factor and enhance HER kinetics. With optimized catalyst loading, the n+p-SiIP-T4/TiO₂/Pt 80 mC electrode achieved a photocurrent density of 8.0 mA cm−2 at 0 V vs. RHE, an applied bias photon-to-current efficiency (ABPE) of 0.93 % at 0.24 V vs. RHE, and a double-layer capacitance (Cdl) of 91 μF cm−2. The onset potential (Von) was positively shifted by ∼1.13 V to 0.49 V vs. RHE compared to a SiIP photocathode, and the photocathode operated continuously at 0 V vs. RHE for 27 h in an acidic electrolyte. These results demonstrate that SiIP has significant potential for PEC hydrogen evolution, with further performance optimization achievable through structural and surface engineering.