This study presents the first fully integrated, push–pull, high power distributed amplifier (DA) for wideband applications in 0.25 µm Gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process. A triple-stacked field-effect transistor cell is employed for each stage of the DA along with the non-uniform distributed power amplifier topology to maximise the output power. The experimental results show that the amplifier exhibits from 7 to 10 dB gain with vi30–32 dBm output power at 1 dB compression (P1 dB) and 32–35.4 dBm saturated output power (Psat) covering a frequency bandwidth from 4 to 20 GHz. The measured second harmonic suppression is >33 dBc from 8 to 40 GHz at the P1 dB operating condition.
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