Nonradiative Recombination Rate Research Articles

A General Approach to Activate Second-Scale Room Temperature Photoluminescence in Organic Small Molecules.

Organic small molecules that exhibit second-scale phosphorescence at room temperature are of interest for potential applications in sensing, anticounterfeiting, and bioimaging. However, such materials systems are uncommon-requiring millisecond to second-scale triplet lifetimes, efficient intersystem crossing, and slow rates of nonradiative recombination. Here, a simple and scalable approach is demonstrated to activate long-lived phosphorescence in a wide variety of molecules by suspending them in rigid polymer hosts and annealing them above the polymer's glass transition temperature. This process produces submicron aggregates of the chromophore, which suppresses intramolecular motion that leads to nonradiative recombination and minimizes triplet-triplet annihilation that quenches phosphorescence in larger aggregates. In some cases, evidence of excimer-mediated intersystem crossing that enhances triplet generation in aggregated chromophores is found. In short, this approach circumvents the current design rules for long-lived phosphors, which will streamline their discovery and development.

The origins of dual-peak emission and anomalous exciton decay in 2D Sn-based perovskites.

Two-dimensional (2D) Sn-based perovskites exhibit significant potential in diverse optoelectronic applications, such as on-chip lasers and photodetectors. Yet, the underlying mechanism behind the frequently observed dual-peak emission in 2D Sn-based perovskites remains a subject of intense debate, and there is a lack of research on the carrier dynamics in these materials. In this study, we investigate these issues in a representative 2D Sn-based perovskite, namely, PEA2SnI4, through temperature-, excitation intensity-, angle-, and time-dependent photoluminescence studies. The results indicate that the high- and low-energy peaks originate from in-face and out-of-face dipole transitions, respectively. In addition, we observe an anomalous increase in the non-radiative recombination rate as temperature decreases. After ruling out enhanced electron-phonon coupling and Auger recombination as potential causes of the anomalous carrier dynamics, we propose that the significantly increased exciton binding energy (Eb) plays a decisive role. The increased Eb arises from enhanced electronic localization, a consequence of weakened lattice distortion at low temperatures, as confirmed by first-principles calculations and temperature-dependent x-ray diffraction measurements. These findings offer valuable insights into the electronic processes in the unique 2D Sn-based perovskites.

Intraband Cooling and Auger Recombination in Weakly to Strongly Quantum-Confined CsPbBr3 Perovskite Nanocrystals.

Semiconductor nanocrystals (NCs) with size-tuned energy gaps present unique and desirable properties for optoelectronic applications. Recent synthetic advancements offer routes to spheroidal CsPbBr3 perovskite NCs in the strong quantum confinement regime with narrow size dispersion. Using tunable femtosecond laser pulses, we examine intraband carrier relaxation using transient absorption spectroscopy and show that, across the transition from weak to strong confinement, hot carrier lifetime increases compared to larger bulk-like particles. However, further increases of confinement subsequently lead to a reduction of the hot carrier lifetime and increase of the non-radiative Auger recombination rate. Finally, we show that hot carrier lifetimes increase as a function of excess energy above the band gap less sensitively under high confinement in comparison to the bulk. Understanding such unique trends is important for maximizing hot carrier lifetimes for use in next-generation hot carrier devices as well as evaluating the transition from weak to strong confinement.

Pattern-Matched Polymer Ligpands Toward Near-Perfect Synergistic Passivation for High-Performance and Stable Br/Cl Mixed Perovskite Light-Emitting Diodes.

Mixed Br/Cl perovskite nanocrystals (PeNCs) exhibit bright pure-blue emission benefiting for fulfilling the Rec. 2100 standard. However, phase segregation remains a significant challenge that severely affects the stability and emission spectrum of perovskite light-emitting diodes (PeLEDs). Here, we demonstrate the optimization of the spacing between polydentate functional groups of polymer ligands to match the surface pattern of CsPbBr1.8Cl1.2 PeNCs, resulting in effective synergistic passivation effect and significant improvements in PeLED performances. The block and alternating copolymers with different inter-functional group spacing are facilely synthesized as ligands for PeNCs. Surprisingly, block copolymers with a higher functional group density do not match PeNCs, while alternating copolymers enable efficient PeNCs with the high photoluminescence intensity, low non-radiative recombination rate and high exciton binding energy. Density functional theory calculations clearly confirm the almost perfect match between alternating copolymers and PeNCs. Finally, pure-blue PeLEDs are achieved with the emission at 467 nm and Commission Internationale de l'Eclairage (CIE) coordinates of (0.131, 0.071), high external quantum efficiency (9.1%) and record spectral and operational stabilities (~ 80 mins) in mixed-halide PeLEDs. Overall, this study contributes to designing the polymer ligands and promoting the development of high-performance and stable pure-color PeLEDs towards display applications.

Optimizing Molecular Packing via Steric Hindrance for Reducing Non-Radiative Recombination in Organic Solar Cells.

Innovative molecule design strategy holds promise for the development of next-generation acceptor materials for efficient organic solar cells with low non-radiative energy loss (ΔEnr). In this study, we designed and prepared three novel acceptors, namely BTP-Biso, BTP-Bme and BTP-B, with sterically structured triisopropylbenzene, trimethylbenzene and benzene as side chains inserted into the shoulder of the central core. The progressively enlarged steric hindrance from BTP-B to BTP-Bme and BTP-Biso induces suppressed intramolecular rotation and altered the molecule packing mode in their aggregation states, leading to significant changes in absorption spectra and energy levels. By regulating the intermolecular π-π interactions, BTP-Bme possesses relatively reduced non-radiative recombination rate and extended exciton diffusion lengths. The binary device based on PB2 : BTP-Bme exhibits an impressive power conversion efficiency (PCE) of 18.5 % with a low ΔEnr of 0.19 eV. Furthermore, the ternary device comprising PB2 : PBDB-TF : BTP-Bme achieves an outstanding PCE of 19.3 %. The molecule design strategy in this study proposed new perspectives for developing high-performance acceptors with low ΔEnr in OSCs.

Recombination dynamics and manybody effect of excitons in large-area monolayer MoS2 capped with (111) NiO epitaxial layer

CVD grown monolayer MoS2 films on c-sapphire substrates are vacuum annealed and capped with (111) NiO epitaxial films using pulsed laser deposition technique. Time, energy and polarization resolved optical techniques are used to understand the effect of capping on the excitonic properties of the monolayer MoS2. It has been observed that trion contribution in the photoluminescence (PL) spectra increases after the capping, suggesting an enhancement of electron concentration in the conduction band. This has been attributed to the capping driven reduction of physisorbed air molecules from the sulphur vacancy ( VS ) sites. Note that the air molecules act as passivating agents for the VS -donors. Low temperature polarization resolved PL spectroscopy and ultrafast pump and probe transient absorption spectroscopy (TAS) show an increase of the biexcitonic population in the system after the encapsulation. The TAS study further reveals longer lifetime for both A and B excitons in capped samples implying a reduction of non-radiative recombination rate of the excitons after the capping. It has also been observed that in the capped samples, K/K′ valleys are populated with trions under sufficiently high pump powers. This has been attributed to the lower non-radiative recombination rates of the high energy photoexcited carriers and the faster transfer of either electrons or holes from the high energy pockets to the K/K′ valleys. The study further reveals different many-body effects in excitons and trions.

Crown-Assisted CsCu2I3 Growth and Trap Passivation for Perovskite Light-Emitting Diodes.

Copper (Cu)-based perovskites are promising for lead-free perovskite light-emitting diodes (PeLEDs). However, it remains a significant challenge to achieve high performance devices due to the nonradiative loss caused by the disordered crystallization and lack of passivation. Crown ethers are known to form host-guest complexes by the interaction between C-O-C groups and certain cations, and 18-crown-6 (18C6) with an appropriate complementary size can interact with Cs+ and Cu+ cations. Herein, we studied the interaction between CsCu2I3 and two crowns with the same cyclic size, 18C6 and dibenzo-18-crown-6 (D18C6). Particularly, D18C6 can reduce the nonradiative recombination rate of CsCu2I3 film by passivating the defects and optimizing the film morphology effectively. The room mean square (RMS) decreased from 5.06 to 2.95 nm, and the PLQY was promoted from 4.71% to 19.9%. Besides, D18C6 can also decrease the barrier of hole injection. The PeLEDs based on D18C6-modified CsCu2I3 realized noticeable improvement with a maximum luminance and EQE of 583 cd/m2 and 0.662%, respectively.

Weakly Confined Organic-Inorganic Halide Perovskite Quantum Dots as High-Purity Room-Temperature Single Photon Sources.

Colloidal perovskite quantum dots (PQDs) have emerged as highly promising single photon emitters for quantum information applications. Presently, most strategies have focused on leveraging quantum confinement to increase the nonradiative Auger recombination (AR) rate to enhance single-photon (SP) purity in all-inorganic CsPbBr3 QDs. However, this also increases the fluorescence intermittency. Achieving high SP purity and blinking mitigation simultaneously remains a significant challenge. Here, we transcend this limitation with room-temperature synthesized weakly confined hybrid organic-inorganic perovskite (HOIP) QDs. Superior single photon purity with a low g(2)(0) < 0.07 ± 0.03 and a nearly blinking-free behavior (ON-state fraction >95%) in 11 nm FAPbBr3 QDs are achieved at room temperature, attributed to their long exciton lifetimes (τX) and short biexciton lifetimes (τXX). The significance of the organic A-cation is further validated using the mixed-cation FAxCs1-xPbBr3. Theoretical calculations utilizing a combination of the Bethe-Salpeter (BSE) and k·p approaches point toward the modulation of the dielectric constants by the organic cations. Importantly, our findings provide valuable insights into an additional lever for engineering facile-synthesized room-temperature PQD single photon sources.

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Internal quantum efficiency (IQE) of AlGaN‐based multiple quantum wells (MQWs) on face‐to‐face‐annealed sputter‐deposited AlN templates is examined by photoluminescence spectroscopy. The excitation power density dependence of IQE is evaluated as a function of temperature under the selective excitation of the quantum wells. The temperature dependences of the maximum IQE and the corresponding excitation power density (EPD) are analyzed based on the rate equation models for carriers and excitons. The decrease of the maximum IQE and increase of the corresponding EPD are mainly due to the increase in the nonradiative recombination rate via nonradiative recombination centers. Furthermore, the nonradiative recombination rate for the MQW with an emission wavelength around 220 nm is activated at a lower temperature than the other samples, which is expected to lead to the lower IQE of the MQW with an emission wavelength around 220 nm.

Suppressing Trap‐Assisted Nonradiative Recombination via Interface Modification for Achieving Efficient Organic Solar Cells

AbstractTrap states in organic solar cells (OSCs) can capture free charges, leading to a reduction in current density and significant energy loss. Since charge collection is primarily dependent on the interface layer, minimizing trap states at interfaces can effectively suppress energy losses, a topic that has been rarely explored. Herein, an interface strategy is proposed by combining Me‐4PACz and PEDOT:PSS to mitigate the trap‐assisted nonradiative recombination at the hole transport layer (HTL). OSCs based on the Me‐4PACz/PEDOT:PSS exhibit reduced trap densities and low energy losses compared to devices fabricated with a single‐layer HTL. This reduction can be attributed to a lower nonradiative recombination rate during hole transport at the interface. Changes in the work function of the two interlayers due to contact result in the existence of a built‐in potential inside the composite interlayer, promoting charge collection and reducing energy loss from charge recombination. Furthermore, the composite HTL interface induces vertical phase separation of active layer, leading to significant improvements of the fill factor for OSCs. As a result, high power conversion efficiencies (PCEs) of 18.70% and 19.02% are achieved for binary all‐polymer solar cells and polymer donor/small molecule acceptor solar cells, respectively.

Multifunctional Surface Treatment against Imperfections and Halide Segregation in Wide-Band Gap Perovskite Solar Cells.

Mixed-halide wide-band gap perovskites (WBPs) still suffer from losses due to imperfections within the absorber and the segregation of halide ions under external stimuli. Herein, we design a multifunctional passivator (MFP) by mixing bromide salt, formamidinium bromide (FABr) with a p-type self-assembled monolayer (SAM) to target the nonradiative recombination pathways. Photoluminescence measurement shows considerable suppression of nonradiative recombination rates after treatment with FABr. However, WBPs still remained susceptible to halide segregation for which the addition of 25% p-type SAM was effective to decelerate segregation. It is observed that FABr can act as a passivating agent of the donor impurities, shifting the Fermi-level (Ef) toward the mid-band gap, while p-type SAM could cause an overweight of Ef toward the valence band. Favorable band bending at the interface could prevent the funneling of carriers toward I-rich clusters. Instead, charge carriers funnel toward an integrated SAM, preventing the accumulation of polaron-induced strain on the lattice. Consequently, n-i-p structured devices with an optimal MFP treatment show an average open-circuit voltage (VOC) increase of about 20 mV and fill factor (FF) increase by 4% compared with the control samples. The unencapsulated devices retained 95% of their initial performance when stored at room temperature under 40% relative humidity for 2800 h.

Impact of annealing temperature on optical, morphological, and surface characteristics of PC/PBT blend exposed to alpha particles

The induced modifications of the optical and surface characteristics in the annealed α-irradiated polycarbonate/polybutylene terephthalate (PC/PBT) blend have been studied in the temperature annealing range from 100 to 200 °C for 15 min. Several techniques have been used to study the changes in chemical composition, optical-electronic transitions, photoemission, contact angle, surface roughness, and hardness of annealed samples comparable to the pristine one. The FTIR spectra exhibit aggregate changes in the band intensities after annealing, indicating the scission and cross-linking of the polymer chains. The intensity of the peaks reduced with α-irradiation but began to increase with increasing annealing temperature. The trend of the function groups found in the annealed samples with the rise in annealing temperature supports the crosslinking mechanism. The UV/Vis spectra revealed that the absorption edges of annealed samples were shifted toward lower photon energy (red shift), reflecting the decrease of optical energy gap from 4 eV to 3.6 eV for direct transition and from 3.8 eV to 3.5 eV for indirect transition at the highest temperature. Further, the number of carbon atoms and the number of carbon clusters increases with the increase in the annealing temperature. The refractive index of the samples decreases from 1.5479 for the pristine sample to 1.4008 for the sample at the highest temperature. Moreover, the dielectric parameters and optical conductivity of the annealed samples were modified after thermal annealing. The PL emission yields are decreased with the increase in annealing temperatures that indicating an enhancement in the non-radiative recombination rate relative to the radiative recombination, which may be due to the increasing in the surface density states. The α-irradiated samples showed a notable increase in contact angle and a notable decrease in surface tension values with increasing the annealing temperatures. The side chain induction, which readily bundles and recombines the annealed parts by raising temperatures, also causes the surface roughness of annealed samples to decrease from 1.099 μm for the pristine sample to 0.696 μm for the annealed sample at the highest temperature. It is noteworthy that there is an increase in the hardness from 10.49 ΜPa for the pristine sample to 41.98 ΜPa for the annealed sample at the highest temperature. This is related to the results of changes in the polymer chains due to the active sites or branching points created by scission, which can lead to cross-linking.

Enhanced performance of Cu2SnS3 absorber layer in SLG/Mo/Cu2SnS3/ZnS/ITO/Al structure: insights and optimisation using SCAPS-1D

ABSTRACT In this paper, an in-depth numerical study was conducted to analyse the behaviour of the electronic structure within the configuration of SLG/Mo/Cu2SnS3/ZnS/ITO/Al solar cells with the aim of improving their performance. The study examines the effects of thickness (Th), energy gap (Eg), and the operational temperature (T) on the Cu2SnS3 absorption layer. Utilising SCAPS-1D software, the study gathers data on short-circuit current density (Jsc), open-circuit voltage (Voc), fill Factor (FF), and efficiency (η), comparing them with experimental literature findings. The results reveal a 24.3% enhancement in the absorber layer at Th = 1.6 µm, Eg = 1.39 eV, and T = 310 K, accompanied by a significant reduction in non-radiative recombination rates.

Probing the Recombination Process at the Intermixed Interface of a Solution-Processed Organic Light Emitting Diode By Impedance Spectroscopy

Solution-processed organic light emitting diode (s-OLED) has garnered considerable research interest due to its cost-effectiveness, improved energy efficiency, and material-saving advantages over conventional vacuum deposition methods in OLED production. Recent studies have shown that the thermal annealing process of multilayered s-OLEDs induces intermixing at the interfaces of the layers and enhances the device performance [1,2]. However, the physical origin of the enhanced s-OLED performance by intermixing at the interfaces is poorly understood. To address this issue, we utilized electrical impedance spectroscopy (IS) to investigate the thermal-induced modifications of charge carrier dynamics in a bilayer s-OLED comprising an electron transporting layer (ETL) and an emission layer (EML). We separately assessed the conductance of the ETL and the charge carrier accumulation at the EML/ETL interface by the characteristic relaxation frequency and the plateau at a low frequency regime (20~100 Hz) extracted from the frequency-dependent capacitance spectra, respectively. The IS analysis revealed that improved charge transport in the ETL by thermal annealing process was mainly responsible for the performance enhancement, rather than intermixing at the EML/ETL interface. Notably, we found that annealing the s-OLEDs above the glass transition temperature (Tg) of the ETL, at which significant intermixing occurs, increased the magnitude of negative capacitance, indicating the increased rate of nonradiative trap-assisted recombination [3]. Accordingly, our IS analysis clarified that extended intermixing at the EML/ETL interface is rather detrimental to the performance of s-OLEDs. This study demonstrates that IS can serve as a powerful tool for accurately analyzing charge carrier dynamics in s-OLEDs by simultaneously probing charge transport, interfacial charge accumulation, and recombination processes, thereby providing valuable insights for optimizing s-OLED performance.[1] ACS Appl. Mater. Interfaces 2015, 7 (37), 20779–20785. https://doi.org/10.1021/acsami.5b05818.[2] Advanced Materials Interfaces 2019, 6 (4), 1801627. https://doi.org/10.1002/admi.201801627.[3] Phys. Rev. Lett. 2018, 120 (11), 116602. https://doi.org/10.1103/PhysRevLett.120.116602. Figure caption. The capacitance at 20 Hz and current efficiency at 100 nit are plotted against the ratio of annealing temperature (T) to glass transition temperature (Tg) of ETL. Figure 1

The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes

In this paper, a near-ultraviolet LED structure was fabricated on a sapphire substrate by using metal–organic chemical vapor deposition with an undoped AlGaN insertion layer introduced between multiple quantum wells and electron blocking layers, and the effect of layer thickness on light-electric performance was investigated. Results of epitaxial structure characterization show that the introduction of an undoped AlGaN insertion layer almost does not affect the crystal quality and surface morphology of the LED epitaxial structure. Electroluminescence testing results indicate that as the insertion layer thickness increases, the device performance initially increases and then decreases. Furthermore, simulation analysis suggests that increasing the insertion layer thickness reduces the injection efficiency of carriers, lowers the radiative recombination rate and light emission performance of the active region's carriers. Additionally, the AlGaN insertion layer can effectively suppress the diffusion of Mg impurities, reduce the non-radiative recombination rate in the multiple quantum well active region, and thus improve the LED's light emission performance. Overall, under the competing effects of these two mechanisms, the optimal light emission performance for the near-ultraviolet LED is achieved when the insertion layer thickness is 1 nm.

Highly Efficient Perovskite/Organic Tandem Solar Cells Enabled by Mixed-Cation Surface Modulation.

Perovskite/organic tandem solar cells (POTSCs) are gaining attention due to their easy fabrication, potential to surpass the S-Q limit, and superior flexibility. However, the low power conversion efficiencies (PCEs) of wide bandgap (Eg) perovskite solar cells (PVSCs) have hindered their development. This work presents a novel and effective mixed-cation passivation strategy (CE) to passivate various types of traps in wide-Eg perovskite. The complementary effect of 4-trifluoro phenethylammonium (CF3 -PEA+ , denoted as CA+ ) and ethylenediammonium (EDA2+ , denoted as EA2+ ) reduces both electron/hole defect densities and non-radiative recombination rate, resulting in a record open-circuit voltage (Voc ) of wide-Eg PVSCs (1.35V) and a high fill factor (FF) of 83.29%. These improvements lead to a record PCE of 24.47% when applied to fabricated POTSCs, the highest PCE to date. Furthermore, unencapsulated POTSCs exhibit excellent photo and thermal stability, retaining over 90% of their initial PCE after maximum power point (MPP) tracking or exposure to 60°C for 500h. These findings imply that the synergic effect of surface passivators is a promising strategy to achieve high-efficiency and stable wide-Eg PVSCs and corresponding POTSCs.

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band Hamiltonian to compute the SL electronic structure, paying careful attention to the identification and mitigation of spurious solutions. The calculated SL eigenstates are used directly to compute spontaneous emission spectra and the radiative recombination coefficient . We elucidate the origin of the relatively large coefficients in InAs/GaSb SLs which, despite the presence of spatially indirect (type-II-like) carrier confinement, are close to that of bulk InAs and compare favourably to those calculated for mid-infrared type-I pseudomorphic and metamorphic quantum well structures having comparable emission wavelengths. Our analysis explicitly quantifies the roles played by carrier localisation (specifically, partial delocalisation of bound electron states) and miniband formation (specifically, miniband occupation and optical selection rules) in determining the magnitude of and its temperature dependence. We perform a high-throughput optimisation of the room temperature coefficient in InAs/GaSb SLs across the 3.5–7 m wavelength range, quantifying the dependence of on the relative thickness of the electron-confining InAs and hole-confining GaSb layers. This analysis provides guidance for the growth of optimised SLs for mid-infrared light emitters. Our results, combined with the expected low non-radiative Auger recombination rates in structures having spatially indirect electron and hole confinement, corroborate recently observed high output power in prototype InAs/GaSb SL inter-band cascade light-emitting diodes.

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

We study the impact of deep-level defects on trap-assisted Auger–Meitner recombination in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) method and deep-level optical spectroscopy (DLOS). Carrier dynamics information, including carrier lifetime, recombination rate, and carrier density, is obtained from SSEL, while DLOS is used to obtain the deep-level defect density. Through fitting the nonradiative recombination rates of wafers with different deep-level defect densities, we obtain the Shockley–Read–Hall (SRH) and trap-assisted Auger–Meitner recombination (TAAR) coefficients. We show that defect-related nonradiative recombination, including both SRH and TAAR, accounts for a relatively small fraction of the total nonradiative recombination, which is dominated by intrinsic Auger–Meitner recombination. The interplay between carrier localization and Coulomb enhancement has a different impact on radiative and intrinsic Auger–Meitner recombination. Evidence is presented that the imbalance between the change of radiative and intrinsic Auger–Meitner recombination is the primary cause of the efficiency droop at high carrier densities in the samples studied.

Mitigating the Trade-Off between Non-Radiative Recombination and Charge Transport to Enable Efficient Ternary Organic Solar Cells.

Ternary organic solar cells (OSCs) have attracted intensive studies due to their promising potential for attaining high-performing photovoltaics, whereas there has been an opening challenge in minimizing the open circuit voltage (Voc) loss while retaining the optimal carrier extraction in the multiple mixture absorbers. Here, we systemically investigate a ternary absorber comprised of two acceptors and a donor, in which the resultant Voc and fill factor are varied and determined by the ratios of acceptor components as a result of the unbalance of non-radiative recombination rates and charge transport. The transient absorption spectroscopy and electroluminescence techniques verify two distinguishable charge-transfer (CT) states in the ternary absorber, and the mismatch of non-radiative recombination rates of those two CT states is demonstrated to be associated with the Voc deficit, whilst the high-emissive acceptor molecule delivers inferior electron mobility, resulting in poor charge transport and a subpar fill factor. These findings enable us to optimize the mixture configuration for attaining the maximal-performing devices. Our results not only provide insight into maximizing the photovoltage of organic solar cells but can also motivate researchers to further unravel the photophysical mechanisms underlying the intermolecular electronic states of organic semiconductors.

High-Efficiency InGaN Photo Cell Irradiated by 532 nm Laser with AlGaN Electron Blocking Layer

In this paper, a high-efficiency InGaN photo cell irradiated by 532 nm laser (at green wavelength) with AlGaN electron blocking layer (EBL) is proposed based on the blue-green light window effect of seawater. Firstly, the InGaN/GaN multiple quantum wells (MQWs) structured material intercalated with AlGaN EBL was designed and grown for InGaN photo cells. Then, by measuring the AFM, XRD and PL of the material, it is found that the insertion of AlGaN EBL can effectively reduce the defect density and improve the steepness of the interface in the active region. Further, based on the above material characteristics, the performance of the InGaN photo cells with AlGaN EBL is evaluated in Silvaco software under 532 nm laser irradiation. The results show that the introduction of AlGaN EBL in InGaN photo cell can not only decrease the non-radiative recombination rates, but also reduce the piezoelectric polarization effect, which contribute to the transport of effective photo-generated carriers and eventually improve the conversion efficiency by 13.325% compared to that with conventional structure. These findings provide critical new insights on high-efficiency GaN-based Photo Cell irradiated by 532 nm laser in the application of underwater communications.