Abstract
ABSTRACT In this paper, an in-depth numerical study was conducted to analyse the behaviour of the electronic structure within the configuration of SLG/Mo/Cu2SnS3/ZnS/ITO/Al solar cells with the aim of improving their performance. The study examines the effects of thickness (Th), energy gap (Eg), and the operational temperature (T) on the Cu2SnS3 absorption layer. Utilising SCAPS-1D software, the study gathers data on short-circuit current density (Jsc), open-circuit voltage (Voc), fill Factor (FF), and efficiency (η), comparing them with experimental literature findings. The results reveal a 24.3% enhancement in the absorber layer at Th = 1.6 µm, Eg = 1.39 eV, and T = 310 K, accompanied by a significant reduction in non-radiative recombination rates.
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